分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列 - 预偏置 共6464条产品


 
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)

 
供应商器件封装

 
功率 - 最大值

 
安装类型

 
零件状态

 
基本零件编号

 
电流 - 集电极(Ic)(最大值)

 
封装/外壳

 
电压 - 集射极击穿(最大值)

 
频率 - 跃迁

 
电阻器 - 基底(R1)

 
不同 Ib,Ic 时的 Vce 饱和值(最大值)

 
电阻器 - 发射极基底(R2)

 
包装

 
晶体管类型

 
电流 - 集电极截止(最大值)

应用筛选
仅显示有货x
RoHSx
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):x
供应商器件封装:x
功率 - 最大值:x
安装类型:x
零件状态:x
基本零件编号:x
电流 - 集电极(Ic)(最大值):x
封装/外壳:x
电压 - 集射极击穿(最大值):x
频率 - 跃迁:x
电阻器 - 基底(R1):x
不同 Ib,Ic 时的 Vce 饱和值(最大值):x
电阻器 - 发射极基底(R2):x
包装:x
晶体管类型:x
电流 - 集电极截止(最大值):x
序号 图片 型号 制造商 环保 描述
1 BCR133SH6433XTMA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
2 BCR133SE6327BTSA1 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
3 BCR133SB6327XT Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
4 BCR133SH6327XTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
5 BCR133SE6433BTMA1 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
6 BCR 133S H6444 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
7 BCR133SH6327XTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
8 BCR133SH6327XTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
9 BCR129SE6327HTSA1 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6
10 PEMD3,115 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
11 PEMD3,115 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
12 PEMD3,115 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
13 PUMD10,135 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
14 PUMD10,115 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz 300mW Surface Mount 6-TSSOP
15 PUMD10,125 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount 6-TSSOP
16 PUMD10,125 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount 6-TSSOP
17 PUMD10,115 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz 300mW Surface Mount 6-TSSOP
18 PUMD10,135 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
19 PUMD10,125 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount 6-TSSOP
20 PUMD10,135 Nexperia USA Inc. Y Pre-Biased Bipolar Transistor (BJT)

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