分立半导体产品 > 晶体管 - 双极 (BJT) - 单,预偏置 共6280条产品


 
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)

 
包装

 
安装类型

 
电压 - 集射极击穿(最大值)

 
电流 - 集电极(Ic)(最大值)

 
基本零件编号

 
电阻器 - 基底(R1)

 
频率 - 跃迁

 
封装/外壳

 
供应商器件封装

 
零件状态

 
不同 Ib,Ic 时的 Vce 饱和值(最大值)

 
功率 - 最大值

 
电阻器 - 发射极基底(R2)

 
晶体管类型

 
电流 - 集电极截止(最大值)

应用筛选
仅显示有货x
RoHSx
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):x
包装:x
安装类型:x
电压 - 集射极击穿(最大值):x
电流 - 集电极(Ic)(最大值):x
基本零件编号:x
电阻器 - 基底(R1):x
频率 - 跃迁:x
封装/外壳:x
供应商器件封装:x
零件状态:x
不同 Ib,Ic 时的 Vce 饱和值(最大值):x
功率 - 最大值:x
电阻器 - 发射极基底(R2):x
晶体管类型:x
电流 - 集电极截止(最大值):x
序号 图片 型号 制造商 环保 描述
1 BCR 148 B6327 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 200mW Surface Mount SOT-23-3
2 BCR 148L3 E6327 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 70mA 100MHz 250mW Surface Mount PG-TSLP-3-4
3 BCR 148F E6327 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-TSFP-3
4 BCR 148T E6327 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 70mA 100MHz 250mW Surface Mount PG-SC-75
5 BCR148WE6327BTSA1 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323-3
6 BCR148WH6327XTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323-3
7 BCR 148F B6327 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-TSFP-3
8 BCR148E6327HTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 200mW Surface Mount SOT-23-3
9 BCR148E6433HTMA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 200mW Surface Mount SOT-23-3
10 BCR148E6327HTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 200mW Surface Mount SOT-23-3
11 BCR148E6327HTSA1 Infineon Technologies Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 200mW Surface Mount SOT-23-3
12 MMUN2213LT1G ON Semiconductor Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
13 SMMUN2213LT1G ON Semiconductor Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
14 MMUN2213LT1G ON Semiconductor Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
15 SMMUN2213LT1G ON Semiconductor Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
16 SMMUN2213LT1G ON Semiconductor Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
17 MMUN2213LT1G ON Semiconductor Y Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
18 BCR133E6433HTMA1 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 200mW Surface Mount SOT-23-3
19 BCR133E6433HTMA1 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 200mW Surface Mount SOT-23-3
20 BCR 142L3 E6327 Infineon Technologies Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSLP-3-4

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