ZXTP749F 25V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data  BVCEO > -25V  Case: SOT23  BVCEO > -35V forward blocking voltage  Case Material: Molded Plastic, “Green” Molding Compound  IC = -3A Continuous Collector Current  UL Flammability Classification Rating 94V-0  Low Saturation Voltage, VCE(SAT) < -150mV @ -1A.  Moisture Sensitivity: Level 1 per J-STD-020  RCE(sat) = 87mΩ for a low equivalent on-resistance  Terminals: Finish – Matte Tin Plated Leads  725mW power dissipation  Solderable per MIL-STD-202, Method 208  hFE characterised up to -6A for high current gain hold-up  Weight 0.008 grams (Approximate)  Complementary NPN Type: ZXTN649F  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Application  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  MOSFET Gate Drivers  Power Switching in Automotive and Industrial Applications  Motor Drive and Control SOT23 C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTP749FTA 1N8 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 17N178 1N8 = Product Type Marking Code ZXTP749F 1 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXTP749F Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -6 A Base Current IB -500 mA Peak Pulse Current IBM -2 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 725 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 172 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 79 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1 oz. copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP749F 2 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXTP749F Thermal Characteristics and Derating information 0.8 A) 10 VLiCmE(istaet)d W) nt ( n ( 0.6 e o r 1 ti r a u p C DC si 0.4 r 1s s o i t D c100m 100ms e r oll Single Pulse 10ms 1ms we 0.2 C o Tamb=25°C 100µs P C I 10m x 0.0 - a 100m 1 10 0 20 40 60 80 100 120 140 160 M -V Collector-Emitter Voltage (V) Temperature (°C) CE Safe Operating Area Derating Curve 180 T =25°C ) 160 amb Single Pulse W ) 100 T =25°C / 140 W amb C ( (° 120 r e e w c 100 D=0.5 n o a 80 P 10 st m si 60 u e D=0.2 Single Pulse m R 40 i D=0.05 x mal 20 D=0.1 Ma 1 r 0 e h 100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k T Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ZXTP749F 3 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXTP749F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -35 -60 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 8) BVCEO -25 -40 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.4 - V IE = -100µA Collector Cutoff Current ICBO - <1 --05.05 nµAA VVCCBB == --2288VV , TA = +100°C Emitter Cutoff Current IEBO - <1 -50 nA VEB = -5.6V 200 320 500 IC = -100mA, VCE = -2V Static Forward Current Transfer Ratio (Note 8) hFE 113000 213800 -- - IICC == --12AA,, VVCCEE == --22VV 25 50 - IC = -6A, VCE = -2V Collector-Emitter Saturation Voltage (Note 8) VCE(sat) -- --28259 --135500 mV IICC == --13AA,, IIBB == --310000mmAA Base-Emitter Turn-On Voltage (Note 8) VBE(on) - -786 -850 mV IC = -1A, VCE = -2V Base-Emitter Saturation Voltage (Note 8) VBE(sat) - -895 -1,000 mV IC = -1A, IB = -100mA Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTP749F 4 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXTP749F Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 Tamb=25°C I /I=10 0.3 C B I /I=100 C B )100m IC/IB=50 ) 150°C V V 0.2 ( ( at) at) 100°C s s E( E( C10m I /I=10 C V C B V 0.1 25°C - I /I=20 - C B -55°C 1m 0.0 1m 10m 100m 1 10m 100m 1 - I Collector Current (A) - I Collector Current (A) C C V v I V v I CE(sat) C CE(sat) C 1.2 150°C V =-2V I /I=10 )E500 CE 1.0 C B -55°C F 25°C h 400 n ( 100°C V) 0.8 ai 300 ( al G 200 25°C BE(sat)0.6 150°C c V pi - 0.4 100°C y 100 -55°C T 0 0.2 1m 10m 100m 1 10 1m 10m 100m 1 - I Collector Current (A) - I Collector Current (A) C C h v I V v I FE C BE(sat) C 1.2 180 V =-2V 160 f = 1MHz CE 1.0 -55°C 140 25°C F) Cibo p 120 V) 0.8 e ( 100 ( c n) n 80 E(o 0.6 ta B ci 60 V a - 150°C p 40 0.4 a Cobo C 100°C 20 0.2 0 1m 10m 100m 1 10m 100m 1 10 - I Collector Current (A) - Voltage(V) C V v I Capacitance v Voltage BE(on) C ZXTP749F 5 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXTP749F Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. All 7° H GAUGE PLANE 0.25 SOT23 J Dim Min Max Typ K1 K A 0.37 0.51 0.40 B 1.20 1.40 1.30 a C 2.30 2.50 2.40 A M D 0.89 1.03 0.915 L L1 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 C B K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 D M 0.085 0.150 0.110 a 0° 8° -- F G All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. Y Dimensions Value (in mm) C 2.0 X 0.8 Y1 C X1 1.35 Y 0.9 Y1 2.9 X X1 ZXTP749F 6 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

ZXTP749F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com ZXTP749F 7 of 7 January 2016 Document Number: DS31901 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

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