ZXTP25020CFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Description Mechanical Data Advanced process capability and packaging maximize the power  Case: SOT23F handling and performance of this small outline transistor. The reverse  Case Material: Molded Plastic. “Green” Molding Compound. blocking capability of the transistor can often result in the elimination UL Flammability Classification Rating 94V-0 of a series connected Schottky diode commonly required with either  Moisture Sensitivity: Level 1 per J-STD-020 bipolar transistors or MOSFETs when used in battery charging  Terminals: Finish – Matte Tin Plated Leads, Solderable per applications. MIL-STD-202, Method 208  Weight: 0.012 grams (Approximate) Features Applications  BVCEO > -20V  Mobile Phone Charging Circuits  BVECO > -7V  MOSFET and IGBT Gate Drivers  IC = -4.5A Continuous Collector Current  High-Side Driving  Low Saturation Voltage VCE(SAT) < -65mV @ -1A  Motor Control  RCE(SAT) = 41m  Disconnect Switch in Portable Products  hFE Characterised Up to -10A  DC-DC Convertors  1.5W Power Dissipation  Totally Lead-Free & Fully RoHS Compliant (Notes 1& 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability SOT23F C E C B B E Top View Device Symbol Top View Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP25020CFFTA AEC-Q101 1F4 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23F 1F4 = Product Type Marking Code YW = Date Code Marking 1F4 W YW = = Y Weaere k: 0: ~A9~ Z : 1~26 Y a~z : 27~52 z represents 52 & 53 week ZXTP25020CFF 1 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXTP25020CFF Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Collector Voltage (Reverse Blocking) VECO -7 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -4.5 A Peak Pulse Current ICM -10 A Base Current IB -1 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit 0.79 (Note 5) 6.3 1.13 (Note 6) Power Dissipation 9.0 W Linear Derating Factor PD 1.50 mW/°C (Note 7) 12.0 1.96 (Note 8) 15.7 (Note 5) 158.7 (Note 6) 110.4 Thermal Resistance, Junction to Ambient (Note 7) RθJA 83.3 °C/W (Note 8) 63.7 Thermal Resistance, Junction to Lead (Note 9) RθJL 60 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge – Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge – Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP25020CFF 2 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXTP25020CFF Thermal Characteristics and Derating Information 1.6 50mmx50mm FR4, 2oz Cu A) 10 VCE(sat) W) 1.4 nt ( Limited n ( 1.2 520omz Cmux50mm FR4, e o r Curr 1 DC ssipati 01..80 225omz Cmux25mm FR4, to 1s Di 0.6 ec100m 100ms r oll 10ms we 0.4 115omz Cmux15mm FR4, C Single Pulse 1ms o 0.2 C Tamb=25°C 100µs P I10m x 0.0 - 100m 1 10 a 0 20 40 60 80 100 120 140 160 M -V Collector-Emitter Voltage (V) Temperature (°C) CE Safe Operating Area Derating Curve 100 ) 80 Tamb=25°C Single Pulse C/W 5F0Rm4m, 2xo5z0 mCmu W) 50Tmammb=x2550°mC,m ° 60 ( FR4, 2oz Cu ( er e D=0.5 w c n o 10 a 40 P st m si D=0.2 u e Single Pulse m R 20 al D=0.05 axi m D=0.1 M er 0 1 h 100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k T Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ZXTP25020CFF 3 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXTP25020CFF Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -25 -50 — V IC = -100µA Collector-Emitter Breakdown Voltage (Base Open) (Note 11) BVCEO -20 -35 — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.2 — V IE = -100µA E(Rmeivtteerrs-eC oBllloeccktoinr gB)r e(Naoktdeo 1w1n) Voltage BVECX -7 -8.0 — V I-E0 .=2 5-1V0<0VµBAC <R0B.2C 5<V1 0k or Emitter-Collector Breakdown Voltage (Base Open) (Note 11) BVECO -7 -8.8 — V IE = -100µA Collector-Base Cutoff Current ICBO — <—-1 --5200 µnAA VVCCBB == --2200VV , TA = +100°C Emitter-Base Cutoff Current IEBO — <-1 -50 nA VEB = -5.6V ON CHARACTERISTICS (Note 11) 200 350 500 IC = -10mA, VCE = -2V Static Forward Current Transfer Ratio hFE 18550 215400 —— — IICC == --14AA,, VVCCEE == --22VV — 40 — IC = -10A, VCE = -2V -50 -65 IC = -1A, IB = -100mA Collector-Emitter Saturation Voltage VCE(SAT) — --18305 --111805 mV IICC == --12AA,, IIBB == --2400mmAA -210 -260 IC = -4.5A, IB = -225mA Base-Emitter Saturation Voltage VBE(SAT) — -950 -1,050 mV IC = -4.5A, IB = -225mA Base-Emitter On Voltage VBE(ON) — -840 -950 mV IC = -4.5A, VCE = -2V SMALL SIGNAL CHARACTERISTICS Transition Frequency fT — 285 — MHz IfC = = 1 -0500MmHAz, VCE = -10V, Output Capacitance COBO — 32.4 40 pF VCB = -10V, f = 1MHz Delay Time tD — 38.4 — ns Rise Time tR — 49.2 — ns VCC = -15V, SFatollr aTgime eT ime ttSF —— 15658 —— nnss IICB1 = = - 7IB520 =m -A1,5 mA Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTP25020CFF 4 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXTP25020CFF Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 0.6 Tamb=25°C I/I=10 0.5 C B I/I=100 100m C B 0.4 ) ) V V ( ( T) T)0.3 A I/I=50 A CE(S10m C B CE(S0.2 150°C V I/I=20 V C B 100°C - I/I=10 - 0.1 25°C C B -55°C 1m 0.0 1m 10m 100m 1 10 1m 10m 100m 1 10 - I Collector Current (A) - I Collector Current (A) C C V v I V v I CE(SAT) C CE(SAT) C 1.6 150°C VCE=2V 565000 1.2 IC/IB=10 1.4 500 Gain 1.2 100°C 440500(h)FE V) 1.0 -55°C 25°C sed 01..80 25°C 330500Gain (AT) 0.8 mali 0.6 220500cal VBE(S 0.6 150°C Nor 00..24 -55°C 51100500 Typi - 0.4 100°C 0.0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 - I Collector Current (A) - I Collector Current (A) C C h v I V v I FE C BE(SAT) C 1.2 V =2V CE 1.0 -55°C 25°C V) 0.8 ( N) O E( 0.6 B V 150°C - 0.4 100°C 0.2 1m 10m 100m 1 10 - I Collector Current (A) C V v I BE(ON) C ZXTP25020CFF 5 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXTP25020CFF Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT23F D c b L1 SOT23F Dim Min Max Typ A 0.80 1.00 0.90 E1 E b 0.35 0.50 0.44 c 0.10 0.20 0.16 D 2.80 3.00 2.90 e 0.95 REF b e1 0.190 REF E 2.30 2.50 2.40 e1 E1 1.50 1.70 1.65 e k 1.20 - - L 0.30 0.65 0.50 L R L1 0.30 0.50 0.40 R 0.05 0.15 - A All Dimensions in mm k Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT23F X C Value Dimensions (in mm) C 0.95 X 0.80 Y1 Y 1.110 Y1 3.000 Y ZXTP25020CFF 6 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXTP25020CFF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com ZXTP25020CFF 7 of 7 February 2016 Document number: DS33747 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

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