ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BV > 70V CEX BV > 20V CEO BV > 5V ECO I = 4.5A C(cont) V < 45 mV @ 1A CE(sat) R = 28 m(cid:1) CE(sat) P = 1.25W D Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package E (cid:127) High peak current (cid:127) High gain (cid:127) Low saturation voltage (cid:127) 70V forward blocking voltage E (cid:127) 5V reverse blocking voltage Applications C (cid:127) MOSFET gate drivers (cid:127) Power switches B (cid:127) Motor control Pinout - top view (cid:127) DC fans (cid:127) DC-DC converters Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN25020CFHTA 7 8 3,000 Device marking 1B3 Issue 1 - June 2006 1 www.zetex.com © Zetex Semiconductors plc 2006

ZXTN25020CFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 70 V CBO Collector-emitter voltage (forward blocking) V 70 V CEX Collector-emitter voltage V 20 V CEO Emitter-collector voltage (reverse blocking) V 5 V ECO Emitter-base voltage V 7 V EBO Continuous collector current(c) IC 4.5 A Base current I 1 A B Peak pulse current I 10 A CM Power dissipation at Tamb =25°C(a) PD 0.73 W Linear derating factor 5.84 mW/°C Power dissipation at Tamb =25°C(b) PD 1.05 W Linear derating factor 8.4 mW/°C Power dissipation at Tamb =25°C(c) PD 1.25 W Linear derating factor 9.6 mW/°C Power dissipation at Tamb =25°C(d) PD 1.81 W Linear derating factor 14.5 mW/°C Operating and storage temperature range T, T - 55 to 150 °C j stg Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R(cid:2)JA 171 °C/W Junction to ambient(b) R(cid:2)JA 119 °C/W Junction to ambient(c) R(cid:2)JA 100 °C/W Junction to ambient(d) R(cid:2)JA 69 °C/W NOTES: (a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d)As (c) above measured at t<5secs. Issue 1 - June 2006 2 www.zetex.com © Zetex Semiconductors plc 2006

ZXTN25020CFH Characteristics Issue 1 - June 2006 3 www.zetex.com © Zetex Semiconductors plc 2006

ZXTN25020CFH Electrical characteristics (at T = 25°C unless otherwise stated) amb Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown BV 70 100 V I = 100(cid:3)A CBO C voltage Collector-emitter breakdown BV 70 100 I = 100(cid:3)A, R (cid:4) 1k(cid:1) or CEX C BE voltage (forward blocking) -1V < V < 0.25V BE Collector-emitter breakdown BVCEO 20 35 V IC = 10mA (*) voltage (base open) Emitter-base breakdown BV 7 8.3 V I = 100(cid:3)A EBO E voltage Emitter-collector breakdown BV 6 8.0 V I = 100(cid:3)A, R (cid:4) 1k(cid:1) or ECX E BC voltage (reverse blocking) 0.25V > V > -0.25V BC Emitter-collector breakdown BV 5 6.6 V I = 100(cid:3)A, ECO E voltage (base open) Collector-base cut-off current I <1 50 nA V = 56V CBO CB 20 (cid:3)A V = 56V, T = 100°C CB amb Collector-emitter cut-off I - 100 nA V = 56V; R (cid:4) 1k(cid:1) or CEX CE BE current -1V < V < 0.25V BE Emitter-base cut-off current I <1 50 nA V = 5.6V EBO EB Collector-emitter saturation VCE(sat) 35 45 mV IC = 1A, IB = 100mA(*) voltage 53 65 mV I = 1A, I = 20mA(*) C B 85 100 mV I = 2A, I = 40mA(*) C B 175 220 mV I = 4.5A, I = 90mA(*) C B 125 140 mV I = 4.5A, I = 450mA(*) C B Base-emitter saturation VBE(sat) 905 1000 mV IC = 4.5A, IB = 90mA(*) voltage Base-emitter turn-on voltage VBE(on) 815 900 mV IC = 4.5A, VCE = 2V(*) Static forward current hFE 200 350 500 IC = 10mA, VCE = 2V(*) transfer ratio 180 320 I = 1A, V = 2V(*) C CE 90 145 I = 4.5A, V = 2V(*) C CE 25 40 I = 10A, V = 2V(*) C CE Transition frequency f 185 MHz I = 50mA, V = 10V T C CE f= 100MHz Output capacitance COBO 16.8 25 pF VCB = 10V, f = 1MHz(*) Delay time t 70.5 ns V = 10V. d CC Rise time tr 88 ns IC = 1A, I = I = 10mA. Storage time t 266 ns B1 B2 s Fall time t 65 ns f NOTES: (cid:4) (cid:3) (cid:4) (*)Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Issue 1 - June 2006 4 www.zetex.com © Zetex Semiconductors plc 2006

ZXTN25020CFH Typical characteristics Issue 1 - June 2006 5 www.zetex.com © Zetex Semiconductors plc 2006

ZXTN25020CFH Package outline - SOT23 L H N D G 3 leads A M B C K F Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Max. Max. A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020 B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004 C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM G 1.90 NOM 0.075 NOM - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Zetex Inc Zetex (Asia Ltd) Zetex Semiconductors plc Streitfeldstraße 19 700 Veterans Memorial Highway 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton D-81673 München Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Oldham, OL9 9LL Germany USA Hong Kong United Kingdom Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone: (44) 161 622 4444 Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 6 www.zetex.com © Zetex Semiconductors plc 2006

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