图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: ZXT10N15DE6TA
  • 制造商: Diodes Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

ZXT10N15DE6TA产品简介:

ICGOO电子元器件商城为您提供ZXT10N15DE6TA由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ZXT10N15DE6TA价格参考。Diodes Inc.ZXT10N15DE6TA封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 15V 4A 120MHz 1.1W 表面贴装 SOT-23-6。您可以下载ZXT10N15DE6TA参考资料、Datasheet数据手册功能说明书,资料中有ZXT10N15DE6TA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS SW NPN LO SAT 15V SOT23-6两极晶体管 - BJT 15V NPN SuperSOT4

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Diodes Incorporated

产品手册

点击此处下载产品Datasheet

产品图片

rohs

过渡期间库存产品核实请求 / 库存产品核实请求

产品系列

晶体管,两极晶体管 - BJT,Diodes Incorporated ZXT10N15DE6TA-

数据手册

点击此处下载产品Datasheet

产品型号

ZXT10N15DE6TA

PCN其它

点击此处下载产品Datasheet

PCN设计/规格

点击此处下载产品Datasheet

不同 Ib、Ic时的 Vce饱和值(最大值)

260mV @ 50mA,4A

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

200 @ 3A,2V

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

产品种类

两极晶体管 - BJT

供应商器件封装

SOT-23-6

其它名称

ZXT10N15DE6TADKR

功率-最大值

1.1W

包装

Digi-Reel®

发射极-基极电压VEBO

5 V

商标

Diodes Incorporated

增益带宽产品fT

120 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SOT-23-6

封装/箱体

SOT-23-6

工厂包装数量

3000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

1.1 W

最大工作温度

+ 150 C

最大直流电集电极电流

4 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

15V

电流-集电极(Ic)(最大值)

4A

电流-集电极截止(最大值)

100nA

直流电流增益hFE最大值

200 at 10 mA at 2 V

直流集电极/BaseGainhfeMin

200 at 10 mA at 2 V, 300 at 200 mA at 2 V, 200 at 3 A at 2 V, 150 at 5 A at 2 V

配置

Single

集电极—发射极最大电压VCEO

15 V

集电极—基极电压VCBO

15 V

集电极—射极饱和电压

230 mV

集电极连续电流

4 A

频率-跃迁

120MHz

推荐商品

型号:BCX56-16,135

品牌:Nexperia USA Inc.

产品名称:分立半导体产品

获取报价

型号:BC548C

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:KSC1008CYBU

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:DSA2001R0L

品牌:Panasonic Electronic Components

产品名称:分立半导体产品

获取报价

型号:MMBTA42-7

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:BC640TA

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:KSA928AOBU

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:SMMBT2907ALT1G

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
ZXT10N15DE6TA 相关产品

BC182LB_D27Z

品牌:ON Semiconductor

价格:

2SCR502UBTL

品牌:Rohm Semiconductor

价格:

KSD1221OTU

品牌:ON Semiconductor

价格:

BF720,115

品牌:Nexperia USA Inc.

价格:¥0.82-¥0.82

BC848BLT1

品牌:ON Semiconductor

价格:¥询价-¥询价

MPSA18RLRAG

品牌:ON Semiconductor

价格:¥询价-¥询价

KSE702S

品牌:ON Semiconductor

价格:

2N6517G

品牌:ON Semiconductor

价格:

PDF Datasheet 数据手册内容提取

ZXT10N15DE6 15V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 DE6 Features Mechanical Data  BVCEO > 15V  Case: SOT26  IC = 4A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound.  ICM = 13A Peak Pulse Current UL Flammability Classification Rating 94V-0 N  R = 50mΩ for a Low Equivalent On-Resistance  Moisture Sensitivity: Level 1 per J-STD-020 O CE(SAT)  Low Saturation Voltage (70mV max @ 1A)  Terminals: Finish – Matte Tin Plated Leads. I T  hFE Characterized up to 12A Solderable per MIL-STD-202, Method 208 A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Weight: 0.015 grams (Approximate) M  Halogen and Antimony Free. “Green” Device (Note 3) R  Qualified to AEC-Q101 Standards for High Reliability Applications O F N  DC–DC Converters I  Power Management Functions E  Power Switches C  Motor Control N A SOT26 V C D A B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXT10N15DE6TA AEC-Q101 617 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT26 617 = Product Type Marking Code YM = Date Code Marking M 617 Y Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) Date Code Key Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code C D E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D ZXT10N15DE6 1 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXT10N15DE6 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) DE6 Characteristic Symbol Value Unit Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V N Base Current IB 500 mA O I Continuous Collector Current IC 4 A T Peak Pulse Collector Current ICM 13 A A M R O Thermal Characteristics F (@TA = +25°C, unless otherwise specified.) N Characteristic Symbol Value Unit I 1.1 E (Note 5) NC PLionweaerr DDeisrsaitpinagti oFna ctor PD 81..87 mWW/ °C (Note 6) A 13.6 V (Note 5) 113 D Thermal Resistance, Junction to Ambient (Note 6) RθJA 73 °C/W A Thermal Resistance, Junction to Lead (Note 7) RθJL 18.6 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 6, except the device is measured at t  5 sec. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXT10N15DE6 2 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXT10N15DE6 DE6 Thermal Characteristics and Derating Information N 1.2 O 10 W) TI (A) n ( 1.0 A ent atio 0.8 RM Curr 1 DC1s ssip 0.6 FO ctor 100ms 10ms er Di 0.4 CE IN I ColleC100m Single Pulse Tamb=251°Cms 100µs Max Pow 00..02 100m 1 10 0 20 40 60 80 100 120 140 160 N V Collector-Emitter Voltage (V) Temperature (°C) A CSEafe Operating Area Derating Curve V D A 120 ) W C/ 100 ° ( e 80 c n D=0.5 a 60 st si e 40 R D=0.2 Single Pulse mal 20 D=0.05 r D=0.1 e h 0 T 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXT10N15DE6 3 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXT10N15DE6 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) DE6 Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 15 70 — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO 15 18 — V IC = 10mA N Emitter-Base Breakdown Voltage BVEBO 5 8.2 — V IE = 100µA O Collector-Base Cutoff Current ICBO — — 100 nA VCB = 10V I T Emitter Cutoff Current IEBO — — 100 nA VEB = 4V A M Collector-Emitter Cutoff Current ICES — — 100 nA VCES = 10V ON CHARACTERISTICS (Note 9) R O 200 415 — IC = 10mA, VCE = 2V F 300 450 — IC = 0.2A, VCE = 2V N DC Current Gain hFE 200 320 — — IC = 3A, VCE = 2V I E 150 240 — IC = 5A, VCE = 2V C — 80 — IC = 12A, VCE = 2V N — 8 14 IC = 100mA, IB = 10mA A — 70 100 IC = 1A, IB = 10mA V Collector-Emitter Saturation Voltage VCE(sat) mV D — 165 200 IC = 3A, IB = 50mA A — 230 260 IC = 4A, IB = 50mA Base-Emitter Turn-On Voltage VBE(sat) — 0.94 1 V IC = 4A, IB = 50mV Base-Emitter Turn-On Voltage VBE(on) — 0.87 0.95 V IC = 4A, VCE = 2V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 80 120 — MHz VCE = 10V, IC = 50mA, f = 100MHz Output Capacitance Cobo — 30 40 pF VCB = 10V, f = 1MHz Turn-On Time t(on) — 120 — ns VCC = 10V, IC = 3A Turn-Off Time t(off) — 160 — ns IB1 = IB2 = 50mA Note: 9. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%. ZXT10N15DE6 4 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXT10N15DE6 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) DE6 1 0.25 Tamb=25°C I/I=50 N C B 0.20 O I 100m T V) V) 0.15 100°C A ( ( RM SAT) IC/IB=100 SAT)0.10 25°C O CE(10m CE( F V IC/IB=50 V 0.05 -55°C N I/I=10 I C B 1m 0.00 E 1m 10m 100m 1 10 1m 10m 100m 1 10 C I Collector Current (A) I Collector Current (A) N C C V v I V v I A CE(SAT) C CE(SAT) C V D 630 A 1.2 VCE=2V 540 1.0 IC/IB=50 100°C n 1.0 450)E ai hF malised G 000...468 25°-C55°C 123876000cal Gain ( (V)BE(SAT) 00..68 -55°C25°C or pi V 100°C N 0.2 90 Ty 0.4 0.0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 I Collector Current (A) I Collector Current (A) C C h v I V v I FE C BE(SAT) C 1.0 V =2V CE 0.8 ) V -55°C ( N) 0.6 O E( 25°C B V 0.4 100°C 0.2 1m 10m 100m 1 10 I Collector Current (A) C V v I BE(ON) C ZXT10N15DE6 5 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXT10N15DE6 Package Outline Dimensions DE6 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D N SOT26 O Dim Min Max Typ I A1 0.013 0.10 0.05 T A E1 E A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 M b 0.35 0.50 0.38 R c 0.10 0.20 0.15 O D 2.90 3.10 3.00 F e - - 0.95 N b e1 - - 1.90 a1 I E 2.70 3.00 2.80 e1 E E1 1.50 1.70 1.60 C L 0.35 0.55 0.40 N a - - 8° A A2 a1 - - 7° V A3 A1 All Dimensions in mm D Seating Plane a A L e c Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C1 Dimensions Value (in mm) C 2.40 C1 0.95 Y1 G C G 1.60 X 0.55 Y 0.80 Y1 3.20 Y X ZXT10N15DE6 6 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

ZXT10N15DE6 DE6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). N Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes O without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or I T trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume A all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated M website, harmless against all damages. R Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. O Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and F hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or N indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. I E Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. C N This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the A final and determinative format released by Diodes Incorporated. V D LIFE SUPPORT A Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com ZXT10N15DE6 7 of 7 October 2015 Document Number: DS33621 Rev. 2 - 2 www.diodes.com © Diodes Incorporated