A Product Line of Green Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID  Fast Switching Speed V(BR)DSS RDS(on) TA = +25°C  Low Gate Drive  Low Input Capacitance 120mΩ @ VGS= 10V 4.4A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V  Halogen and Antimony Free. “Green” Device (Note 3) 180mΩ @ VGS= 4.5V 3.5A  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications  Case: SOT223 This MOSFET is designed to minimize the on-state resistance  Case Material: Molded Plastic, “Green” Molding Compound; and yet maintain superior switching performance, making it ideal for UL Flammability Classification Rating 94V-0 high efficiency power management applications.  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See Diagram Below  DC-DC Converters  Terminals: Finish - Matte Tin Annealed over Copper Leadframe;  Power Management Functions Solderable per MIL-STD-202, Method 208  Disconnect Switches  Weight: 0.112 grams (Approximate)  Motor Control  Uninterrupted Power Supply D SOT223 G S Top View Pin Out - Top Equivalent Circuit View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A11GTA See below 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT223 ZZZXXVMMNNN W ZXMN6A11 = Product Type Marking Code W YWW = Date Code Marking 64A31101 Y Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) ZXMN6A11G 1 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGS ±20 (Note 6) 4.4 Continuous Drain Current VGS = 10V TA = +70°C (Note 6) ID 3.5 (Note 5) 3.1 A Pulsed Drain Current VGS = 10V (Note 7) IDM 15.6 Continuous Source Current (Body Diode) (Note 6) IS 5 Pulsed Source Current (Body Diode) (Note 7) ISM 15.6 Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit 2.0 (Note 5) Power Dissipation 16 W Linear Derating Factor PD 3.9 mW/°C (Note 6) 31 (Note 5) 62.5 Thermal Resistance, Junction to Ambient (Note 6) RθJA 32.0 °C/W Thermal Resistance, Junction to Lead (Note 8) RθJL 9.8 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t ≤ 10 seconds. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300μs. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMN6A11G 2 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G Thermal Characteristics ) 10 RDS(on) W2.00 25mm x 25mm A) Limited n (1.75 1oz FR4 ( o nt ti1.50 e 1 a r p1.25 ur DC si C 1s s1.00 n 100m 100ms Di0.75 Drai Tamb=25°C 10ms 1ms wer0.50 I D10m 25m1moz xF 2R54mm 100µs Po0.25 x0.00 a 1 10 M 0 20 40 60 80 100 120 140 160 V Drain-Source Voltage (V) Temperature (°C) DS Safe Operating Area Derating Curve ) W 60 T =25°C amb ) Single Pulse C/ 25mm x 25mm W T =25°C ° 50 1oz FR4 (100 amb ( r e e 25mm x 25mm c 40 w 1oz FR4 n D=0.5 o a P st 30 m si u 10 Re 20 D=0.2 Single Pulse m al 10 D=0.05 axi m M D=0.1 er 0 1 h 100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k T Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ZXMN6A11G 3 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 60   V ID = 250A, VGS = 0V Zero Gate Voltage Drain Current IDSS   1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS   100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0  3.0 V ID = 250A, VDS = VGS Static Drain-Source On-Resistance (Note 6) RDS (ON)  00..110550 00..112800 Ω VVGGSS == 41.05VV,, IIDD = = 2 2.A5A Forward Transconductance (Notes 6 & 7) gfs  4.9  S VDS = 15V, ID = 2.5A Diode Forward Voltage (Note 6) VSD  0.85 0.95 V IS = 2.8A, VGS = 0V, TJ = +25°C Reverse Recovery Time (Note 7) trr  21.5  ns IS = 2.8A, di/dt = 100A/µs Reverse Recovery Charge (Note 7) Qrr  20.5  nC TJ = +25°C DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss  330  Output Capacitance Coss  35.2  pF Vf =D S1 .=0 M40HVz, VGS = 0V, Reverse Transfer Capacitance Crss  17.1  Gate Charge (Note 8) Qg  3.0  VGS = 4.5V Total Gate Charge (Note 8) Qg  5.7  nC VDS = 15V Gate-Source Charge (Note 8) Qgs  1.25  VGS = 10V ID = 2.5A Gate-Drain Charge (Note 8) Qgd  0.86  Turn-On Delay Time (Note 8) tD(on)  1.95  Turn-On Rise Time (Note 8) tr  3.5  ns VDD = 30V, ID = 2.5A, Turn-Off Delay Time (Note 8) tD(off)  8.2  RG = 6, VGS = 10V Turn-Off Fall Time (Note 8) tf  4.6  Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 7. For design aid only, not subject to production testing. 8. Switching characteristics are independent of operating junction temperature. ZXMN6A11G 4 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G Typical Characteristics T = 25°C 10V 5V T = 150°C 10V 5V A) 10 A) 10 4V ( 4V ( t t 3.5V n 3.5V n e e urr 1 3V urr 1 3V C C 2.5V n n rai VGS rai 0.1 VGS D 0.1 D 2V D 2.5V D I I 0.1 1 10 0.1 1 10 V Drain-Source Voltage (V) V Drain-Source Voltage (V) DS DS Output Characteristics Output Characteristics A) 10 VDS = 10V VGS(th) 11..68 VIG =S =2 .150AV ent ( T = 150°C and 1.4 D RDS(on) Curr 1 R DS(on) 11..02 n ai T = 25°C ed 0.8 V DrD 0.1 malis 0.6 VIG =S =2 5V0DuSA GS(th) I D r 0.4 o 2 3 4 5 N -50 0 50 100 150 V Gate-Source Voltage (V) Tj Junction Temperature (°C) GS Typical Transfer Characteristics Normalised Curves v Temperature ) e ( 1 A) c ( an 3V 3.5V 4V 4.5V nt 10 t e s r Resi VGS Cur - n On 5V rai 1 T = 150°C D e c 10V e ur 0.1 rs T = 25°C o e S T = 25°C v 0.1 - e n R rai 1 10 D 0.4 0.6 0.8 1.0 1.2 Dn) ID Drain Current (A) IS VSD Source-Drain Voltage (V) o On-Resistance v Drain Current Source-Drain Diode Forward Voltage S( D R ZXMN6A11G 5 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G Typical Characteristics (cont.) ) 500 V 10 ( V = 0V e I = 2.5A pF) 400 f =GS 1MHz ag 8 D ( olt e V c 300 6 an CISS ce VDS = 30V cit 200 COSS ur 4 a o p C S a RSS - C 100 e 2 t a C G 0 S 0 1 10 G 0 1 2 3 4 5 6 V - Drain - Source Voltage (V) V Q - Charge (nC) DS Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Test Circuit ZXMN6A11G 6 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G Package Outline Dimensions Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version D b1 Q C SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 E E1 C 0.20 0.30 0.25 D 6.45 6.55 6.50 Gauge E 3.45 3.55 3.50 Plane E1 6.90 7.10 7.00 0.25 e - - 4.60 Seating L Plane e1 - - 2.30 L 0.85 1.05 0.95 e1 e b 0°-10° QA ll Dim0.8e4n sio0n.s9 4in m0m.8 9 A A1 7° 7° Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version X1 Y1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 C1 Y2 Y 1.60 Y1 1.60 Y2 8.00 Y X C ZXMN6A11G 7 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN6A11G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com ZXMN6A11G 8 of 8 March 2015 Document number: DS33556 Rev. 6 - 2 www.diodes.com © Diodes Incorporated

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