A Product Line of Diodes Incorporated ZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE N Product Summary Features and Benefits O TI ID max • Low On-Resistance A V(BR)DSS RDS(on) Max TA = 25°C • Low Threshold (Note 5) • Fast Switching Speed M R 120mΩ @ VGS = 10V 3.3A • Low Gate Drive 30V • Lead Free/RoHS Compliant (Note 1) O 180mΩ @ VGS = 4.5V 2.7A • "Green" Device (Note 2) F • Qualified to AEC-Q101 Standards for High Reliability N I E Mechanical Data Description and Applications C N This MOSFET has been designed to minimize the on-state resistance • Case: SOT89 A (RDS(on)) and yet maintain superior switching performance, making it • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 V ideal for high efficiency power management applications. D • Moisture Sensitivity: Level 1 per J-STD-020 A • DC-DC Converters • Terminals: Matte Tin Finish • Weight: 0.052 grams (approximate) • Power Management functions • Motor control SOT89 D G S Top View Device symbol Pin-out Top Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN3A01ZTA 1S8 7 12 1,000 Notes: 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 1S8 1S8 = Product type Marking Code ZXMN3A01Z 1 of 6 February 2012 Document number DS35722 Rev. 1 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN3A01Z Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit N Drain-Source Voltage VDSS 30 V O Gate-Source Voltage VGSS ±20 V ATI Continuous Drain Current SStetaatdey @@ VVGGSS == 1100VV ;; TTAA == 2755°°CC ((NNoottee 55)) ID 32..37 A M @ VGS = 10V ; TA = 75°C (Note 4) 2.2 R Pulsed Drain Current (Note 6) IDM 20 A O Continuous Source Current (Body Diode) (Note 5) IS 3.3 A F Pulsed Source Current (Body Diode) (Note 6) ISM 20 A N Thermal Characteristics I @TA = 25°C unless otherwise specified E Characteristic Symbol Value Unit C (Note 4) 0.97 W N Power Dissipation (Note 5) PD 2.12 W A (Note 4) 129 °C/W V Thermal Resistance, Junction to Ambient (Note 5) RθJA 59 °C/W D Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C A Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm FR-4 substrate PC board with 2oz copper 6. Single pulse rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. 1,000 100 R (W) SRRiθθnJJgAAl (et=) P=5u 7rl(°stC)e */W RθJA RLiDmSit(eond) PW = 10µs WE TJ - TA = P * RθJA(t) A) 10 POI 100 NT ( T E N R E R SI U 1 DC AN N C PW = 10s TR AI PW = 1s , PEAK PK) 10 I, DRD0.1 TTJA( m=a 2x)5 =°C 150°C PW =P 1W0 0=m P1s0WPm W=s 1=m 1s00µs P( VGS = 10V Single Pulse DUT on 1in.2 Board 1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.1 1 10 100 t1, PULSE DURATION TIME (sec) V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area 1 E D = 0.7 C D = 0.5 N A T D = 0.3 S SI E R 0.1 L D = 0.1 D = 0.9 A M R D = 0.05 E H T T D = 0.02 N E 0.01 SI D = 0.01 N RA D = 0.005 RθJA(t) = r(t) * RθJA r(t), T Single Pulse RDθuJtAy =C y5c7l°eC, /DW = t1/ t2 0.001 0.00001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance ZXMN3A01Z 2 of 6 February 2012 Document number DS35722 Rev. 1 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN3A01Z N Electrical Characteristics O @TA = 25°C unless otherwise specified I T Characteristic Symbol Min Typ Max Unit Test Condition A OFF CHARACTERISTICS M Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA R Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 0.5 μA VDS = 30V, VGS = 0V O Gate-Source Leakage IGSS - - 100 nA VGS = ±20V, VDS = 0V F ON CHARACTERISTICS N Gate Threshold Voltage VGS(th) 1 - - V VDS = VGS, ID = 250μA E I Static Drain-Source On-Resistance (Note 7) RDS (ON) - 0.1-0 6 118200 mΩ VVGGSS == 14.05VV,, I DID == 2 2.A5A C Forward Transconductance (Note 7 & 9) gFS - 3.5 - S VDS = 4.5V, ID = 2.5A N Diodes Forward Voltage (Note 7) VSD - 0.85 0.95 V TJ = 25°C, IS = 1.7A, VGS = 0V A DYNAMIC CHARACTERISTICS V Input Capacitance (Note 8 & 9) Ciss - 186 - pF AD Output Capacitance (Note 8 & 9) Coss - 48 - pF fV =D S1 .=0 M25HVz, VGS = 0V, Reverse Transfer Capacitance (Note 8 & 9) Crss - 29 - pF Gate Charge (Note 8 & 9) Qg - 2.6 - nC VGS = 4.5V, VDS = 15V, ID = 2.5A Total Gate Charge (Note 8 & 9) Qg - 5.0 - nC GGaattee--SDorauirnc eC hCahragreg e(N (oNtoet e8 8& &9 )9 ) QQggds -- 01..82 -- nnCC IVDG =S 2=. 51A0V , VDS = 15V, Reverse Recovery Time (Note 9) trr 17.7 ns TJ = 25°C, IS = 2.5A, Reverse Recovery Charge (Note 9) Qrr 13.0 nC di/dt = 100A/μs Turn-On Delay Time (Note 8 & 9) tD(on) - 2.6 - ns Turn-On Rise Time (Note 8 & 9) tr - 4.1 - ns VGS = 10V, VDD = 15V, Turn-Off Delay Time (Note 8 & 9) tD(off) - 13.5 - ns RG = 6Ω , ID = 2.5A Turn-Off Fall Time (Note 8 & 9) tf - 3.6 - ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. 8. Switching characteristics are independent of operating junction temperature. 9. For design aid only, not subject to production testing. 10 10 9 9 8 8 T (A) 7 T (A) 7 N N E 6 E 6 R R R R U 5 U 5 C C N N AI 4 AI 4 R R D D , D 3 , D 3 I I 2 2 1 1 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 4 Typical Output Characteristic, T = 25°C Fig. 5 Typical Output Characteristic, T = 150°C A A ZXMN3A01Z 3 of 6 February 2012 Document number DS35722 Rev. 1 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN3A01Z 10 10 )Ω N E ( C O N A I T AT T (A) ESIS 1 RM RREN ON-R VGS = 2.5V VGS = 3.0V O CU 1 CE F N UR N AI O R S NCE I I, DD TA =T 1A2 5=° 1C50°C TTAA = = 2 855°C°C , DRAIN-N) 0.1 VGS = 3.5V VGS = 4.0V VGS = 5.0V VGS = 10V A TA = -55°C S(O V 0.1 RD 0.01 D 0 1 2 3 4 5 6 0.01 0.1 1 10 A VGS, GATE-SOURCE VOLTAGE (V) ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical Transfer Characteristics Fig. 7 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 10 )Ω E ( C N A T RESIS 1.2 NT (V) 1 TA = 150°C TA = 25°C ON- RRE E U C 1.0 C R E U C O R N-S OU 0.1 DRAI 0.8 IVDG =S 2=5 V0µDAS I, SS , N) O S( D R 0.6 0.01 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 T, JUNCTION TEMPERATURE (°C) V , SOURCE-DRAIN VOLTAGE (V) J SD Fig. 8 On-Resistance Variation with Temperature Fig. 9 Diode Forward Voltage vs. Current 1,000 10 F) V) E (p E ( 8 VDS = 15V C G ID = 2.5A N A A LT T O CI V PA Ciss D 6 A OL N C 100 SH O E TI R 4 C H UN Coss E T J T C, T Crss GAS 2 f = 1MHz G V 10 0 0 5 10 15 20 25 30 0 1 2 3 4 5 6 V , DRAIN-SOURCE VOLTAGE (V) Q , TOTAL GATE CHARGE (nC) DS g Fig. 10 Typical Junction Capacitance Fig. 11 Gate Charge ZXMN3A01Z 4 of 6 February 2012 Document number DS35722 Rev. 1 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN3A01Z N Package Outline Dimensions O I T MA D1 R0.200 C SOT89 R O Dim Min Max F A 1.40 1.60 N E B 0.44 0.62 H B1 0.35 0.54 I C 0.35 0.43 E D 4.40 4.60 C B L D1 1.52 1.83 N B1 e E 2.29 2.60 A e1 e 1.50 Typ DV 8° (4X) eH1 3.943 .00 Typ4 .25 A A L 0.89 1.20 All Dimensions in mm D Suggested Pad Layout X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 (2x) X2 0.416 Y 1.300 Y1 Y3 Y4 Y1 4.600 Y2 1.475 Y Y2 Y3 0.950 Y4 1.125 C C 1.500 X (3x) ZXMN3A01Z 5 of 6 February 2012 Document number DS35722 Rev. 1 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated ZXMN3A01Z N IMPORTANT NOTICE O DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, I T INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE A (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). M Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes R without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the O application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or F trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume N all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated I website, harmless against all damages. E Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. C Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and N hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or A indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. V D Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings A noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com ZXMN3A01Z 6 of 6 February 2012 Document number DS35722 Rev. 1 - 2 www.diodes.com © Diodes Incorporated

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