® XTR112 XTR114 XTR114 XTR112 4-20mA CURRENT TRANSMITTERS with Sensor Excitation and Linearization FEATURES APPLICATIONS l LOW UNADJUSTED ERROR l INDUSTRIAL PROCESS CONTROL l PRECISION CURRENT SOURCES l FACTORY AUTOMATION m XTR112: Two 250 A l SCADA REMOTE DATA ACQUISITION m XTR114: Two 100 A l REMOTE TEMPERATURE AND PRESSURE l RTD OR BRIDGE EXCITATION TRANSDUCERS l LINEARIZATION l TWO OR THREE-WIRE RTD OPERATION l LOW OFFSET DRIFT: 0.4m V/(cid:176) C Pt1000 NONLINEARITY CORRECTION USING XTR112 and XTR114 l LOW OUTPUT CURRENT NOISE: 30nAp-p 5 l HIGH PSR: 110dB min 4 l HIGH CMR: 86dB min l WIDE SUPPLY RANGE: 7.5V TO 36V %) 3 l SO-14 SOIC PACKAGE arity ( 2 RTUDn Ncoornrelincteeadrity e n nli DESCRIPTION No 1 Corrected Nonlinearity The XTR112 and XTR114 are monolithic 4-20mA, 0 two-wire current transmitters. They provide complete –1 current excitation for high impedance platinum RTD –200°C +850°C temperature sensors and bridges, instrumentation am- Process Temperature (°C) plifier, and current output circuitry on a single inte- grated circuit. The XTR112 has two 250m A current sources while the XTR114 has two 100m A sources for I RTD excitation. R Versatile linearization circuitry provides a 2nd-order IR VLIN correction to the RTD, typically achieving a 40:1 VREG 7.5V to 36V improvement in linearity. + V PS Instrumentation amplifier gain can be configured for a wide range of temperature or pressure measurements. 4-20 mA XTR112 Total unadjusted error of the complete current trans- RG XTR114 VO mitter is low enough to permit use without adjustment in many applications. This includes zero output cur- RTD RL rent drift, span drift and nonlinearity. The XTR112 – and XTR114 operate on loop power supply voltages down to 7.5V. XTR112: I = 250µA Both are available in an SO-14 surface-mount pack- XTR114: IR = 100µA age and are specified for the –40(cid:176) C to +85(cid:176) C indus- R trial temperature range. International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 Twx: 910-952-1111 • Internet: http://www.burr-brown.com/ • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 ® ©1998 Burr-Brown Corporation PDS-11473A XTR112Pr,in tXedT inR U.1S.A1. 4December, 1998 SBOS101

SPECIFICATIONS At T = +25(cid:176)C, V+= 24V, and TIP29C external transistor, unless otherwise noted. A XTR112U XTR112UA XTR114U XTR114UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OUTPUT Output Current Equation I = V • (40/R ) + 4mA, V in Volts, R in W A O IN G IN G Output Current, Specified Range 4 20 [ [ mA Over-Scale Limit 24 27 30 [ [ [ mA Under-Scale Limit: XTR112 I = 0 0.9 1.3 1.7 [ [ [ mA REG XTR114 0.6 1 1.4 [ [ [ mA ZERO OUTPUT(1) V = 0V, R = ¥ 4 [ mA IN G Initial Error – 5 – 25 [ – 50 m A vs Temperature – 0.07 – 0.5 [ – 0.9 m A/(cid:176)C vs Supply Voltage, V+ V+ = 7.5V to 36V 0.04 0.2 [ [ m A/V vs Common-Mode Voltage V = 1.25V to 3.5V(2) 0.02 [ m A/V CM vs V Output Current 0.3 [ m A/mA REG Noise: 0.1Hz to 10Hz 0.03 [ m Ap-p SPAN Span Equation (transconductance) S = 40/R [ A/V G Initial Error(3) Full Scale (V ) = 50mV – 0.05 – 0.2 [ – 0.4 % IN vs Temperature(3) – 3 – 25 [ [ ppm/(cid:176)C Nonlinearity: Ideal Input(4) Full Scale (V ) = 50mV 0.003 0.01 [ [ % IN INPUT(5) Offset Voltage V = 2V – 50 – 100 [ – 250 m V CM vs Temperature – 0.4 – 1.5 [ – 3 m V/(cid:176)C vs Supply Voltage, V+ V+ = 7.5V to 36V – 0.3 – 3 [ [ m V/V vs Common-Mode Voltage, V = 1.25V to 3.5V(2) – 10 – 50 [ – 100 m V/V CM RTI (CMRR) Common-Mode Input Range(2) 1.25 3.5 [ [ V Input Bias Current 5 25 [ 50 nA vs Temperature 20 [ pA/(cid:176)C Input Offset Current – 0.2 – 3 [ – 10 nA vs Temperature 5 [ pA/(cid:176)C Impedance: Differential 0.1 || 1 [ GW || pF Common-Mode 5 || 10 [ GW || pF Noise: 0.1Hz to 10Hz 0.6 [ m Vp-p CURRENT SOURCES V = 2V(6) O Current: XTR112 250 [ m A XTR114 100 [ m A Accuracy – 0.05 – 0.2 [ – 0.4 % vs Temperature – 15 – 35 [ – 75 ppm/(cid:176)C vs Power Supply, V+ V+ = 7.5V to 36V – 10 – 25 [ [ ppm/V Matching – 0.02 – 0.1 [ – 0.2 % vs Temperature – 3 – 15 [ – 30 ppm/(cid:176)C vs Power Supply, V+ V+ = 7.5V to 36V 1 10 [ [ ppm/V Compliance Voltage, Positive (V+)–3 (V+) –2.5 [ [ V Negative(2) 0 –0.2 [ [ V Output Impedance: XTR112 500 [ MW XTR114 1.2 [ GW Noise: 0.1Hz to 10Hz: XTR112 0.001 [ m Ap-p XTR114 0.0004 [ m Ap-p V (2) 5.1 [ V REG Accuracy – 0.02 – 0.1 [ [ V vs Temperature – 0.2 [ mV/(cid:176)C vs Supply Voltage, V+ 1 [ mV/V Output Current: XTR112 –1, +2.1 [ mA XTR114 –1, +2.4 [ mA Output Impedance 75 [ W LINEARIZATION R (internal) 1 [ kW LIN Accuracy – 0.2 – 0.5 [ – 1 % vs Temperature – 25 – 100 [ [ ppm/(cid:176)C POWER SUPPLY Specified Voltage +24 [ V Operating Voltage Range +7.5 +36 [ [ V TEMPERATURE RANGE Specification, T to T –40 +85 [ [ (cid:176)C MIN MAX Operating/Storage Range –55 +125 [ [ (cid:176)C Thermal Resistance, q JA SO-14 Surface-Mount 100 [ (cid:176)C/W [ Specification same as XTR112U, XTR114U. NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero. (2) Voltage measured with respect to I pin. (3) Does not include initial error or TCR of gain-setting resistor, R . (4) Increasing the full-scale input range improves nonlinearity. (5) Does not RET G include Zero Output initial error. (6) Current source output voltage with respect to I pin. RET ® XTR112, XTR114 2

PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS(1) Top View SO-14 Power Supply, V+ (referenced to IO pin)..........................................40V Input Voltage, V+, V– (referenced to I pin)............................0V to V+ IN IN O Storage Temperature Range.......................................–55(cid:176)C to +125(cid:176)C XTR112 and XTR114 Lead Temperature (soldering, 10s)..............................................+300(cid:176)C Output Current Limit...............................................................Continuous I 1 14 I Junction Temperature...................................................................+165(cid:176)C R1 R2 V– 2 13 V+ NOTE: (1) Stresses above these ratings may cause permanent damage. IN IN Exposure to absolute maximum conditions for extended periods may degrade R 3 12 V device reliability. G LIN R 4 11 V G REG ELECTROSTATIC NC 5 10 V+ DISCHARGE SENSITIVITY I 6 9 B (Base) RET IO 7 8 E (Emitter) This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with NC = No Connection appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION PACKAGE SPECIFIED CURRENT DRAWING TEMPERATURE ORDERING TRANSPORT PRODUCT SOURCES PACKAGE NUMBER(1) RANGE NUMBER(2) MEDIA XTR112U 2 x 250m A SO-14 Surface Mount 235 –40(cid:176)C to +85(cid:176)C XTR112U Rails " " " " " XTR112U/2K5 Tape and Reel XTR112UA 2 x 250m A SO-14 Surface Mount 235 –40(cid:176)C to +85(cid:176)C XTR112UA Rails " " " " " XTR112UA/2K5 Tape and Reel XTR114U 2 x 100m A SO-14 Surface Mount 235 –40(cid:176)C to +85(cid:176)C XTR114U Rails " " " " " XTR114U/2K5 Tape and Reel XTR114UA 2 x 100m A SO-14 Surface Mount 235 –40(cid:176)C to +85(cid:176)C XTR114UA Rails " " " " " XTR114UA/2K5 Tape and Reel NOTES: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) Models with a slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces of “XTR112UA/2K5” will get a single 2500-piece Tape and Reel. For detailed Tape and Reel mechanical information, refer to Appendix B of Burr-Brown IC Data Book. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. ® 3 XTR112, XTR114

FUNCTIONAL BLOCK DIAGRAM V XTR112: I = I = 250µA LIN R1 R2 IR1 XTR114: IR1 = IR2 = 100µA 12 I R2 1 14 V REG V+ I I R1 R2 11 10 13 V+ 5.1V IN 4 R B 1kLWIN 100µA 9 Q1 R G 3 E V I = 100µA + IN 8 2 R V– G IN 975W 25W 7 ( 4 0 ) I = 4mA + V • O IN R G 6 I RET ® XTR112, XTR114 4

TYPICAL PERFORMANCE CURVES At T = +25(cid:176)C, and V+ = 24V, unless otherwise noted. A TRANSCONDUCTANCE vs FREQUENCY STEP RESPONSE 50 R = 500W R = 125W g mA/V) 40 G G 20mA RG = 2kW o L ce (20 30 A/div RG = 125W n m ucta 20 R = 2kW 4 d G n co 4mA ns 10 a Tr 0 100 1k 10k 100k 1M 25m s/div Frequency (Hz) COMMON-MODE REJECTION RATIO vs FREQUENCY POWER-SUPPLY REJECTION RATIO vs FREQUENCY 110 140 100 B) d 120 o (dB) 90 Ratio ( 100 RG = 125W Rati 80 R = 125W on n G cti 80 o 70 e ejecti 60 y Rej 60 RG = 2kW Mode R 50 RG = 2kW er Suppl 40 n- 40 w 20 o o m P om 30 0 C 10 100 1k 10k 100k 1M 20 10 100 1k 10k 100k 1M Frequency (Hz) Frequency (Hz) OVER-SCALE CURRENT vs TEMPERATURE UNDER-SCALE CURRENT vs TEMPERATURE 29 1.45 With External Transistor 1.4 28 mA) mA)1.35 XTR112 Over-Scale Current ( 22227654 V+ = 36V V+ = 24V V+ = 7.5V Under-Scale Current (1111.1.1.210...352515 XTR114 1 23 0.95 –75 –50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) ® 5 XTR112, XTR114

TYPICAL PERFORMANCE CURVES (CONT) At T = +25(cid:176)C, and V+= 24V, unless otherwise noted. A INPUT VOLTAGE AND CURRENT ZERO OUTPUT AND REFERENCE NOISE DENSITY vs FREQUENCY CURRENT NOISE vs FREQUENCY 10k 10k 10k Hz) Hz) Zero Output Current (cid:214)V/ (cid:214)A/ e (n 1k 1k e (f Hz) 1k ois ois (cid:214)A/ N N p Input Voltage 100 Current Noise 100 Input Current Noise ( 100 Reference Current XTR112 Voltage Noise XTR114 10 10 10 1 10 100 1k 10k 100k 1 10 100 1k 10k 100k Frequency (Hz) Frequency (Hz) INPUT BIAS AND OFFSET CURRENT ZERO OUTPUT CURRENT ERROR vs TEMPERATURE vs TEMPERATURE 25 4 nA) A) 2 Offset Current ( 2105 +IB µCurrent Error ( ––024 nd 10 ut –6 a p s ut ut Bia 5 –IB ero O –8 p I Z –10 n OS I 0 –12 –75 –50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) INPUT OFFSET VOLTAGE DRIFT ZERO OUTPUT DRIFT PRODUCTION DISTRIBUTION PRODUCTION DISTRIBUTION 80 40 Typical production distribution Typical production distribution 70 of packaged units. XTR112 and 35 of packaged units. XTR112 XTR114 included. and XTR114 included. %) 60 %) 30 s ( 50 s ( 25 nit nit U U of 40 of 20 nt nt e 30 e 15 c c er er P 20 P 10 10 5 0 0 0 2 4 6 8 0 2 4 6 8 0 2 4 6 8 0 055515552555355545555 0. 0. 0.In0.put O1.ffs1.et V1.oltag1.e D1.rift (2.µV/°2.C) 2. 2. 2. 3. 0.020.00.070.0.120.10.170.0.220.20.270.0.320.30.370.0.420.40.470. Zero Output Drift (µA/°C) ® XTR112, XTR114 6

TYPICAL PERFORMANCE CURVES (CONT) At T = +25(cid:176)C, and V+= 24V, unless otherwise noted. A CURRENT SOURCE DRIFT CURRENT SOURCE MATCHING PRODUCTION DISTRIBUTION DRIFT PRODUCTION DISTRIBUTION 40 90 Typical production distribution Typical production distribution 35 of packaged units. 80 of packaged units. XTR112 and XTR112 and XTR114 included. XTR114 included. 70 30 %) %) s ( 25 s ( 60 Unit Unit 50 nt of 20 nt of 40 e 15 e erc erc 30 P 10 P 20 5 10 0 0 0 5 0 5 0 5 0 5 0 5 0 5 0 5 0 5 0 2 4 6 8 0 2 4 6 8 0 2 4 6 8 0 1 1 2 2 3 3 4 4 5 5 6 6 7 7 1 1 1 1 1 2 2 2 2 2 3 Current Source Drift (ppm/°C) Current Source Matching Drift (ppm/°C) XTR114 V OUTPUT VOLTAGE XTR112 V OUTPUT VOLTAGE REG REG vs V OUTPUT CURRENT vs V OUTPUT CURRENT REG REG 5.35 5.35 125°C 125°C 5.30 5.30 V) V) 25°C e ( 5.25 e ( 5.25 ag 25°C ag olt 5.20 olt 5.20 V V ut ut utp 5.15 utp 5.15 OEG 5.10 –55°C NOTE: Above 2.4mA, OEG 5.10 –55°C NOTE: Above 2.1mA, VR zero output degrades VR zero output degrades 5.05 5.05 5.00 5.00 –1 –0.5 0 0.5 1 1.5 2 2.5 3 –1 –0.5 0 0.5 1 1.5 2 2.5 3 V Output Current (mA) V Output Current (mA) REG REG REFERENCE CURRENT ERROR vs TEMPERATURE +0.05 %) 0 or ( Err nt –0.05 e urr C e –0.10 c n e er ef –0.15 R –0.20 –75 –50 –25 0 25 50 75 100 125 Temperature (°C) ® 7 XTR112, XTR114

APPLICATION INFORMATION The transfer function through the complete instrumentation amplifier and voltage-to-current converter is: Figure 1 shows the basic connection diagram for the XTR112 I = 4mA + V • (40/R ) and XTR114. The loop power supply, V , provides power O IN G PS for all circuitry. Output loop current is measured as a voltage (V in volts, R in ohms) IN G across the series load resistor, R . L where V is the differential input voltage. As evident from IN Two matched current sources drive the RTD and zero- the transfer function, if R is not used the gain is zero and G setting resistor, RZ. These current sources are 250m A for the the output is simply the XTR’s zero current. The value of RG XTR112 and 100m A for the XTR114. Their instrumentation varies slightly for two-wire RTD and three-wire RTD con- amplifier input measures the voltage difference between the nections with linearization. R can be calculated from the G RTD and RZ. The value of RZ is chosen to be equal to the equations given in Figure 1 (two-wire RTD connection) and resistance of the RTD at the low-scale (minimum) measure- Table I (three-wire RTD connection). ment temperature. R can be adjusted to achieve 4mA output Z The I pin is the return path for all current from the current at the minimum measurement temperature to correct for RET sources and V . The I pin allows any current used in input offset voltage and reference current mismatch of the REG RET external circuitry to be sensed by the XTR112 and XTR114 XTR112 and XTR114. and to be included in the output current without causing an RCM provides an additional voltage drop to bias the inputs of error. the XTR112 and XTR114 within their common-mode input The V pin provides an on-chip voltage source of approxi- range. R should be bypassed with a 0.01m F capacitor to REG CM mately 5.1V and is suitable for powering external input minimize common-mode noise. Resistor R sets the gain of G circuitry (refer to Figure 6). It is a moderately accurate the instrumentation amplifier according to the desired tem- voltage reference—it is not the same reference used to set perature range. R provides second-order linearization LIN1 the precision current references. V is capable of sourcing correction to the RTD, typically achieving a 40:1 improve- REG approximately 2.1mA of current for the XTR112 and 2.4mA ment in linearity. An additional resistor is required for three- for the XTR114. Exceeding these values may affect the 4mA wire RTD connections, see Figure 3. zero output. Both products can sink approximately 1mA. I R2 Possible choices for Q (see text). 1 IR1 TYPE PACKAGE 2N4922 TO-225 TIP29C TO-220 TIP31C TO-220 12 13 VI+VNLIN IR11 IR214V 11 10 7.5V to 36V REG V+ I 4 O R G 4-20 mA 9 R(G2) XTR112 B Q1 0.01µF V XTR114 O 3 + RLIN1(3) RG E 8 RL VPS IO – 2 VI–N 7 I RET RTD RZ(1) 6 I O = 4mA + VIN • ( 4R 0 ) G NOTES: (1) R = RTD resistance at minimum measured temperature. Z 2.5 • I [R(R + R ) – 2(RR )] RCM (2)RG = REF 1R2 – RZ 2 Z 2 1 0.4 • R (R – R) 0.01µF (3)R = LIN 2 1 LIN1 I (2R – R – R ) REF 1 2 Z where R = RTD Resistance at (T + T )/2 1 MIN MAX XXTTRR111124:: IIR1 == IIR2 == 215000µµAA,, RRCM == 38..32kkWW RR2L IN= =R 1TkDW R (eInstiesrtannacl)e at TMAX R1 R2 CM I = 0.25 for XTR112 REF I = 0.1 for XTR114 REF FIGURE 1. Basic Two-Wire RTD Temperature Measurement Circuit with Linearization. ® XTR112, XTR114 8

A negative input voltage, V , will cause the output current range from 7.5V to 36V. The loop supply voltage, V , will IN PS to be less than 4mA. Increasingly negative V will cause the differ from the applied voltage according to the voltage drop IN output current to limit at approximately 1.3mA for the on the current sensing resistor, R (plus any other voltage L XTR112 and 1mA for the XTR114. Refer to the typical drop in the line). curve “Under-Scale Current vs Temperature.” If a low loop supply voltage is used, R (including the loop L Increasingly positive input voltage (greater than the full- wiring resistance) must be made a relatively low value to scale input) will produce increasing output current according assure that V+ remains 7.5V or greater for the maximum to the transfer function, up to the output current limit of loop current of 20mA: approximately 27mA. Refer to the typical curve “Over- Scale Current vs Temperature.” (cid:230) (V+)–7.5V(cid:246) R max= –R L Ł 20mA ł WIRING EXTERNAL TRANSISTOR It is recommended to design for V+ equal or greater than Transistor Q conducts the majority of the signal-dependent 1 7.5V with loop currents up to 30mA to allow for out-of- 4-20mA loop current. Using an external transistor isolates range input conditions. the majority of the power dissipation from the precision input and reference circuitry of the XTR112 and XTR114, The low operating voltage (7.5V) of the XTR112 and maintaining excellent accuracy. XTR114 allow operation directly from personal computer power supplies (12V – 5%). When used with the RCV420 Since the external transistor is inside a feedback loop its Current Loop Receiver (Figure 7), load resistor voltage drop characteristics are not critical. Requirements are: V = CEO 45V min, b = 40 min and P = 800mW. Power dissipation is limited to 3V. D requirements may be lower if the loop power supply voltage is less than 36V. Some possible choices for Q are listed in ADJUSTING INITIAL ERRORS 1 Figure 1. Many applications require adjustment of initial errors. Input The XTR112 and XTR114 can be operated without this offset and reference current mismatch errors can be cor- external transistor, however, accuracy will be somewhat rected by adjustment of the zero resistor, R . Adjusting the Z degraded due to the internal power dissipation. Operation gain-setting resistor, R , corrects any errors associated with G without Q is not recommended for extended temperature gain. 1 ranges. A resistor (R = 3.3kW ) connected between the I RET pin and the E (emitter) pin may be needed for operation TWO-WIRE AND THREE-WIRE RTD below 0(cid:176) C without Q to guarantee the full 20mA full-scale 1 CONNECTIONS output, especially with V+ near 7.5V. In Figure 1, the RTD can be located remotely simply by extending the two connections to the RTD. With this remote LOOP POWER SUPPLY two-wire connection to the RTD, line resistance will intro- The voltage applied to the XTR112 and XTR114, V+, is duce error. This error can be partially corrected by adjusting measured with respect to the I connection, pin 7. V+ can the values of R ,R , and R . O Z G LIN1 A better method for remotely located RTDs is the three-wire RTD connection shown in Figure 3. This circuit offers improved accuracy. R ’s current is routed through a third Z wire to the RTD. Assuming line resistance is equal in RTD lines 1 and 2, this produces a small common-mode voltage which is rejected by the XTR112 and XTR114. A second resistor, R , is required for linearization. 10 LIN2 V+ Note that although the two-wire and three-wire RTD con- 8 nection circuits are very similar, the gain-setting resistor, E R , has slightly different equations: XTR112 G 0.01µF [ ] XTR114 2.5•I R (R +R )–2(R R ) Two-wire: R = REF 1 2 Z 2 Z G R –R 2 1 I O 7 Three-wire: R = 2.5•IREF(R2 –RZ)(R1–RZ) IRET G R –R 2 1 6 For operation without external where R = RTD resistance at T Z MIN transistor, connect a 3.3kW R = RTD resistance at (T + T )/2 resistor between pin 6 and 1 MIN MAX RQ = 3.3kW pin 8. See text for discussion R2 = RTD resistance at TMAX of performance. I = 0.25 for XTR112 REF I = 0.1 for XTR114 REF FIGURE 2. Operation Without External Transistor. ® 9 XTR112, XTR114

Table I summarizes the resistor equations for two-wire and LINEARIZATION three-wire RTD connections. An example calculation is also RTD temperature sensors are inherently (but predictably) provided. To maintain good accuracy, at least 1% (or better) nonlinear. With the addition of one or two external resistors, resistors should be used for R . Table II provides standard R and R , it is possible to compensate for most of this G LIN1 LIN2 1% R values for a three-wire Pt1000 RTD connection with nonlinearity resulting in 40:1 improvement in linearity over G linearization for the XTR112. Table III gives R values for the uncompensated output. G the XTR114. TWO-WIRE THREE-WIRE R R R R R G LIN1 G LIN1 LIN2 General Equations = IREF • 2.5 [R1 (R2 + RZ) – 2 (R2RZ)] = 0.4 • RLIN (R2 – R1) = IREF • 2.5 (R2 – RZ) (R1 – RZ)] = 0.4 • RLIN (R2 – R1) = 0.4 • (RLIN + RG)(R2 – R1) (R2 – R1) IREF • (2R1 – R2 – RZ) (R2 – R1) IREF • (2R1 – R2 – RZ) IREF • (2R1 – R2 – RZ) XTR112 (IREF = 0.25) = 0.625 • [R1 (R2 + RZ) – 2 (R2RZ)] = 1.6 • RLIN (R2 – R1) = 0.625 • (R2 – RZ) (R1 – RZ)] = 1.6 • RLIN (R2 – R1) = 1.6 • (RLIN + RG)(R2 – R1) (see Table II) (R2 – R1) (2R1 – R2 – RZ) (R2 – R1) (2R1 – R2 – RZ) (2R1 – R2 – RZ) XTR114 (IREF = 0.1) = 0.25 • [R1 (R2 + RZ) – 2 (R2RZ)] = 4 • RLIN (R2 – R1) = 0.25 • (R2 – RZ) (R1 – RZ)] = 4 • RLIN (R2 – R1) = 4 • (RLIN + RG)(R2 – R1) (see Table III) (R2 – R1) (2R1 – R2 – RZ) (R2 – R1) (2R1 – R2 – RZ) (2R1 – R2 – RZ) where R = RTD resistance at the minimum measured temperature, T Z MIN R = RTD resistance at the midpoint measured temperature, T = (T + T )/2 1 MID MIN MAX R = RTD resistance at maximum measured temperature, T 2 MAX R = 1kW (internal) LIN XTR112 RESISTOR EXAMPLE: The measurement range is –100(cid:176)C to +200(cid:176)C for a 3-wire Pt100 RTD connection. Determine the values for R , R , R , and R . Look up the values S G LIN1 LIN2 from the chart or calculate the values according to the equations provided. METHOD 1: TABLE LOOK UP T = –100(cid:176)C and D T = 300(cid:176)C (T = +200(cid:176)C), MIN MAX Using Table II the 1% values are: Calculation of Pt1000 Resistance Values RZ = 604W RLIN1 = 33.2kW (according to DIN IEC 751) RG = 750W RLIN2 = 59kW Equation (1) Temperature range from –200(cid:176)C to 0(cid:176)C: METHOD 2: CALCULATION R(T) = 1000 [1 + 3.90802 • 10–3 • T – 0.5802 • 10–6 • T2 – 4.27350 • 10–12 • (T – 100) • T3] Step 1: Determine R, R, and R. Z 1 2 RZ is the RTD resistance at the minimum measured temperature, TMIN = –100(cid:176)C. Equation (2) Temperature range from 0(cid:176)C to +850(cid:176)C: Using Equation (1) at right gives RZ = 602.5W (1% value is 604W ). R(T) = 1000 (1 + 3.90802 • 10–3 • T – 0.5802 • 10–6 • T2) R is the RTD resistance at the maximum measured temperature, T = 200(cid:176)C. 2 MAX Using Equation (2) at right gives R2 = 1758.4W . where: R(T) is the resistance in W at temperature T. T is the temperature in (cid:176)C. R is the RTD resistance at the midpoint measured temperature, 1 T = (T + T )/2 = (–100 + 200)/2 = 50(cid:176)C. R is NOT the average of R and R. MID MIN MAX 1 Z 2 NOTE: Most RTD manufacturers provide reference tables for Using Equation (2) at right gives R = 1194W . 1 resistance values at various temperatures. Step 2: Calculate RG, RLIN1, and RLIN2 using equations above. Resistor values for other RTD types (such as Pt2000) can be R = 757W (1% value is 750W ) calculated using the XTR resistor selection program in the RG = 33.322kW (1% value is 33.2kW ) Applications Section on Burr-Brown’s web site (www.burr- RLIN1 = 58.548kW (1% value is 59kW ) brown.com) LIN2 TABLE I. Summary of Resistor Equations for Two-Wire and Three-Wire Pt1000 RTD Connections. ® XTR112, XTR114 10

XTR112 1% RESISTOR VALUES FOR A THREE-WIRE RTD CONNECTION MEASUREMENT TEMPERATURE SPAN D T ((cid:176)C) T 100(cid:176)C 200(cid:176)C 300(cid:176)C 400(cid:176)C 500(cid:176)C 600(cid:176)C 700(cid:176)C 800(cid:176)C 900(cid:176)C 1000(cid:176)C MIN –200(cid:176)C 187/267 187/536 187/806 187/1050 187/1330 187/1580 187/1820 187/2100 187/2370 187/2670 48700 31600 25500 21500 17800 15000 13000 11300 9760 8660 61900 48700 46400 44200 41200 39200 36500 34800 33200 31600 –100(cid:176)C 604/255 604/499 604/4750 604/1000 604/1270 604/1500 604/1780 604/2050 604/2260 86600 49900 33200 24900 19600 15800 13300 11500 10000 110000 75000 59000 49900 44200 40200 37400 34800 32400 0(cid:176)C 1000/243 1000/487 1000/732 1000/976 1000/1210 1000/1470 1000/1740 1000/1960 105000 51100 33200 24300 19100 15400 13000 11000 130000 76800 57600 48700 42200 38300 35700 33200 100(cid:176)C 1370/237 1370/475 1370/715 1370/953 1370/1180 1370/1430 1370/1690 102000 49900 32400 23700 18700 15000 12400 R /R Z G 127000 73200 56200 46400 40200 36500 33200 R LIN1 200(cid:176)C 1740/232 1740/464 1740/698 1740/931 1740/1150 1740/1400 R LIN2 100000 48700 31600 23200 17800 14300 121000 69800 53600 44200 38300 34800 300(cid:176)C 2100/221 2100/442 2100/665 2100/887 2100/1130 95300 46400 30100 22100 17400 NOTE: The values listed in the table are 1% resistors (in W ). 118000 68100 51100 42200 36500 Exact values may be calculated from the following equations: 400(cid:176)C 2490/215 2490/432 2490/649 2490/866 93100 45300 29400 21500 RZ = RTD resistance at minimum measured temperature, TMIN. 113000 64900 48700 40200 500(cid:176)C 28880700/20100 2840302/04012 2820800/06019 RG=0.625•(R(R22––RRZ1))(R1–RZ) 600(cid:176)C 31106700/20000 3166109/04002 45300 RLIN1=1.(62R•R1–LIRN(2R–2R–ZR)1) 86600 42200 700(cid:176)C 31408200/10901 59000 RLIN2=1.6•((R2RLI1N–+RR2G–)R(RZ2)–R1) 82500 where R = RTD resistance at the midpoint measured temperature, (T + T )/2 100000 1 MIN MAX 800(cid:176)C 3740/187 R2 = RTD resistance at TMAX 80600 R = 1kW (Internal) 95300 LIN TABLE II. XTR112 R , R , R , and R Standard 1% Resistor Values for Three-Wire Pt1000 RTD Connection with Linearization. Z G LIN1 LIN2 XTR114 1% RESISTOR VALUES FOR A THREE-WIRE RTD CONNECTION MEASUREMENT TEMPERATURE SPAN D T ((cid:176)C) T 100(cid:176)C 200(cid:176)C 300(cid:176)C 400(cid:176)C 500(cid:176)C 600(cid:176)C 700(cid:176)C 800(cid:176)C 900(cid:176)C 1000(cid:176)C MIN –200(cid:176)C 187/107 187/215 187/316 187/422 187/523 187/634 187/732 187/845 187/953 187/1050 121000 78700 64900 53600 45300 38300 32400 28000 24900 21500 133000 95300 84500 76800 68100 68100 56200 52300 47500 45300 –100(cid:176)C 604/102 604/200 604/301 604/402 604/511 604/604 604/715 604/806 604/909 221000 124000 84500 61900 48700 40200 33200 28700 24900 243000 150000 110000 86600 73200 63400 57600 52300 47500 0(cid:176)C 1000/97.6 1000/196 1000/294 1000/392 1000/487 1000/590 1000/681 1000/787 261000 130000 84500 61900 47500 39200 32400 27400 287000 154000 107000 84500 71500 61900 54900 49900 100(cid:176)C 1370/95.3 1370/191 1370/287 1370/383 1370/475 1370/576 1370/665 255000 124000 80600 59000 46400 37400 31600 R /R 280000 147000 105000 82500 68100 59000 52300 RZ G LIN1 200(cid:176)C 1740/90.9 1740/182 1740/274 1740/365 1740/464 1740/549 R LIN2 249000 121000 78700 57600 44200 36500 267000 143000 100000 78700 64900 56200 300(cid:176)C 2100/88.9 2100/178 2100/267 2100/357 2100/348 237000 118000 75000 54900 43200 NOTE: The values listed in the table are 1% resistors (in W ). 261000 137000 95300 75000 61900 Exact values may be calculated from the following equations: 400(cid:176)C 2490/86.6 2490/174 2490/261 2490/249 232000 113000 73200 53600 RZ = RTD resistance at minimum measured temperature, TMIN. 249000 133000 93100 71500 500(cid:176)C 2822024013/00800200.5 211812007000/1006005 268898087000/4009 RG=0.25•(R(2R–2R–ZR)1()R1–RZ) 600(cid:176)C 3126105/08000.6 31106500/10602 RLIN1=4(2•RR1L–INR(R22––RRZ1)) 215000 121000 700(cid:176)C 3428005/07060.8 RLIN2=4•(R(2LRIN1+–RRG2)–(RR2Z)–R1) 221000 where R = RTD resistance at the midpoint measured temperature, (T + T )/2 800(cid:176)C 3740/75 1 MIN MAX 200000 R2 = RTD resistance at TMAX 215000 R = 1kW (Internal) LIN TABLE III. XTR114 R , R , R , and R Standard 1% Resistor Values for Three-Wire Pt1000 RTD Connection with Linearization. Z G LIN1 LIN2 ® 11 XTR112, XTR114

A typical two-wire RTD application with linearization is R can be adjusted to provide an additional voltage drop to CM shown in Figure 1. Resistor R provides positive feed- bias the inputs of the XTR112 and XTR114 within their LIN1 back and controls linearity correction. R is chosen ac- common-mode input range. LIN1 cording to the desired temperature range. An equation is given in Figure 1. ERROR ANALYSIS In three-wire RTD connections, an additional resistor, R , LIN2 Table IV shows how to calculate the effect various error is required. As with the two-wire RTD application, R LIN1 sources have on circuit accuracy. A sample error calculation provides positive feedback for linearization. RLIN2 provides for a typical RTD measurement circuit (Pt1000 RTD, 200(cid:176) C an offset canceling current to compensate for wiring resis- measurement span) is provided. The results reveal the tance encountered in remotely located RTDs. R and R LIN1 LIN2 XTR112’s and XTR114’s excellent accuracy, in this case 1% are chosen such that their currents are equal. This makes the unadjusted for the XTR112, 1.16% for the XTR114. Adjusting voltage drop in the wiring resistance to the RTD a common- resistors R and R for gain and offset errors improves the G Z mode signal which is rejected by the XTR112 and XTR114. XTR112’s accuracy to 0.28% (0.31% for the XTR114). Note The nearest standard 1% resistor values for R and R LIN1 LIN2 that these are worst-case errors; guaranteed maximum values should be adequate for most applications. Tables II and III were used in the calculations and all errors were assumed to be provide the 1% resistor values for a three-wire Pt1000 RTD positive (additive). The XTR112 and XTR114 achieve perfor- connection. mance which is difficult to obtain with discrete circuitry and If no linearity correction is desired, the V pin should be requires less space. LIN left open. With no linearization, R = 2500 • V , where G FS V = full-scale input range. FS OPEN-CIRCUIT PROTECTION The optional transistor Q in Figure 3 provides predictable 2 RTDs behavior with open-circuit RTD connections. It assures that if any one of the three RTD connections is broken, the XTR’s The text and figures thus far have assumed a Pt1000 RTD. output current will go to either its high current limit (» 27mA) With higher resistance RTDs, the temperature range and or low current limit (» 1.3mA for XTR112 and » 1mA for input voltage variation should be evaluated to ensure proper XTR114). This is easily detected as an out-of-range condition. common-mode biasing of the inputs. As mentioned earlier, 12 I 1 O VLIN I 14 RLIN1(1) RLIN2(1) 13 VI+N R1 IR2VRE1G1V1+0 4 R G R(G1) XXTTRR111124 B 9 Q1 0.01µF 3 R E G 8 I 2 O VI–N 7 I RET EcrQeaUtAesL al insme arlel sciosmtamncoens- mhoedree RZ(1) 6 IO voltage which is rejected by XTR112 and XTR114. 2 1 RCM 0.01µF (R ) (R ) LINE2 LINE1 NOTES: (1) See Table I for resistor equations and RTD 2NQ222(22)2 1o%utp vuat luceusr.r e(n2t) Qif 2 aonpyt ioonnael. PRrToDvi decos npnreecdtiicotna blies broken: XTR112 XTR114 (RLINE3) OPEN RTD I I O O TERMINAL Resistance in this line causes 3 1 » 1.3mA » 1mA a small common-mode voltage 2 » 27mA » 27mA which is rejected by XTR112 3 » 1.3mA » 1mA and XTR114. FIGURE 3. Three-Wire Connection for Remotely Located RTDs. ® XTR112, XTR114 12

SAMPLE ERROR CALCULATION FOR XTR112(1) RTD value at 4mA Output (R ) 1000W RTD MIN RTD Measurement Range 200(cid:176)C Ambient Temperature Range (D T) 20(cid:176)C A Supply Voltage Change (D V+) 5V Common-Mode Voltage Change (D CM) 0.1V ERROR SAMPLE (ppm of Full Scale) ERROR SOURCE ERROR EQUATION ERROR CALCULATION(2) UNADJ. ADJUST. INPUT Input Offset Voltage V /(V ) • 106 100m V/(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 526 0 OS IN MAX vs Common-Mode CMRR • D CM/(V ) • 106 50m V/V • 0.1V/(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 26 26 IN MAX Input Bias Current I/I • 106 0.025m A/250m A • 106 100 0 B REF Input Offset Current I • R /(V ) • 106 3nA • 1000W /(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 16 0 OS RTD MIN IN MAX Total Input Error: 668 26 EXCITATION Current Reference Accuracy I Accuracy (%)/100% • 106 0.2%/100% • 106 2000 0 REF vs Supply (I vs V+) • D V+ 25ppm/V • 5V 125 125 REF Current Reference Matching I Matching (%)/100% • I • 0.1%/100% • 250m A • 1000W /(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 1316 0 REF REF R /(V ) • 106 RTD MIN IN MAX vs Supply (I matching vs V+) • D V+ • 10ppm/V • 5V • 250m A • 1000W /(250m A • 3.8W /(cid:176)C • 200(cid:176)C) 66 66 REF R /(V ) RTD MIN IN MAX Total Excitation Error: 3507 191 GAIN Span Span Error (%)/100% • 106 0.2%/100% • 106 2000 0 Nonlinearity Nonlinearity (%)/100% • 106 0.01%/100% • 106 100 100 Total Gain Error: 2100 100 OUTPUT Zero Output ( I - 4mA)/ 16000m A • 106 25m A/16000m A • 106 1563 0 ZERO vs Supply (I vs V+) • D V+/16000m A • 106 0.2m A/V • 5V/16000m A • 106 63 63 ZERO Total Output Error: 1626 63 DRIFT (D T = 20(cid:176)C) A Input Offset Voltage Drift • D T/(V ) • 106 1.5m V/(cid:176)C • 20(cid:176)C/(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 158 158 A IN MAX Input Bias Current (typical) Drift • D T/I • 106 20pA/(cid:176)C • 20(cid:176)C/250m A • 106 2 2 A REF Input Offset Current (typical) Drift • D T • R /(V ) • 106 5pA/(cid:176)C • 20(cid:176)C • 1000W /(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 0.5 0.5 A RTD MIN IN MAX Current Reference Accuracy Drift • D T 35ppm/(cid:176)C • 20(cid:176)C 700 700 A Current Reference Matching Drift • D T • I • R /(V ) 15ppm/(cid:176)C • 20(cid:176)C • 250m A • 1000W /(250m A • 3.8W /(cid:176)C • 200(cid:176)C) 395 395 A REF RTD MIN IN MAX Span Drift • D T 25ppm/(cid:176)C • 20(cid:176)C 500 500 A Zero Output Drift • D T/16000m A • 106 0.5m A/(cid:176)C • 20(cid:176)C/16000m A • 106 626 626 A Total Drift Error: 2382 2382 NOISE (0.1Hz to 10Hz, typ) Input Offset Voltage v/(V ) • 106 0.6m V/(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 3 3 n IN MAX Current Reference I Noise • R /(V ) • 106 3nA • 1000W /(250m A • 3.8W /(cid:176)C • 200(cid:176)C) • 106 16 16 REF RTD MIN IN MAX Zero Output I Noise/16000m A • 106 0.03m A/16000m A • 106 2 2 ZERO Total Noise Error: 21 21 TOTAL ERROR: 10304 2783 (1.03%) (0.28%) NOTES: (1) For XTR114, I = 100m A. Total unadjusted error is 1.16%, adjusted error 0.31%. (2) All errors are min/max and referred to input, unless REF otherwise stated. TABLE IV. Error Calculation. REVERSE-VOLTAGE PROTECTION SURGE PROTECTION The XTR112’s and XTR114’s low compliance rating (7.5V) Remote connections to current transmitters can sometimes be permits the use of various voltage protection methods with- subjected to voltage surges. It is prudent to limit the maximum out compromising operating range. Figure 4 shows a diode surge voltage applied to the XTR to as low as practical. bridge circuit which allows normal operation even when the Various zener diode and surge clamping diodes are specially voltage connection lines are reversed. The bridge causes a designed for this purpose. Select a clamp diode with as low a two diode drop (approximately 1.4V) loss in loop supply voltage rating as possible for best protection. For example, a voltage. This results in a compliance voltage of approxi- 36V protection diode will assure proper transmitter operation mately 9V—satisfactory for most applications. If 1.4V drop at normal loop voltages, yet will provide an appropriate level in loop supply is too much, a diode can be inserted in series of protection against voltage surges. Characterization tests on with the loop supply voltage and the V+ pin. This protects three production lots showed no damage to the XTR112 or against reverse output connection lines with only a 0.7V loss XTR114 within loop supply voltages up to 65V. in loop supply voltage. ® 13 XTR112, XTR114

Most surge protection zener diodes have a diode character- If the RTD sensor is remotely located, the interference may istic in the forward direction that will conduct excessive enter at the input terminals. For integrated transmitter as- current, possibly damaging receiving-side circuitry if the semblies with short connection to the sensor, the interfer- loop connections are reversed. If a surge protection diode is ence more likely comes from the current loop connections. used, a series diode or diode bridge should be used for Bypass capacitors on the input reduce or eliminate this input protection against reversed connections. interference. Connect these bypass capacitors to the I RET terminal as shown in Figure 5. Although the dc voltage at the I terminal is not equal to 0V (at the loop supply, V ) this RADIO FREQUENCY INTERFERENCE RET PS circuit point can be considered the transmitter’s “ground.” The long wire lengths of current loops invite radio frequency The 0.01m F capacitor connected between V+ and I may O interference. RF can be rectified by the sensitive input help minimize output interference. circuitry of the XTR112 and XTR114 causing errors. This generally appears as an unstable output current that varies with the position of loop supply or input wiring. NOTE: (1) Zener Diode 36V: 1N4753A or General Semiconductor TransorbTM 1N6286A. Use lower voltage zener diodes with loop power supply 10 voltages less than 30V for increased protection. V+ See “Over-Voltage Surge Protection.” 0.01µF XTR112 B D(1) 1N4148 XTR114 9 1 Diodes Maximum V must be PS less than minimum E R V voltage rating of zener 8 L PS diode. I O The diode bridge causes 7 I a 1.4V loss in loop supply RET voltage. 6 FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection. 12 1 1kW 13 VI+VNLIN IR1 IR214V 11 10 REG V+ 4 R G R R LIN1 LIN2 R XTR112 B 9 0.01µF G XTR114 3 R E G 8 I 1kW 2 VI–N O7 I RET R Z 6 0.01µF 0.01µF RTD (1) R CM 0.01µF NOTE: (1) Bypass capacitors can be connected to either the I pin or the I pin. RET O FIGURE 5. Input Bypassing Technique with Linearization. ® XTR112, XTR114 14

I < 2mA REG Isothermal 5V Block 12 V+ V 1 Type J OPA277 13 VLI+INN IR1 IR214V 11 10 REG V– V+ 4 1MW (1) RG 1MW 0.01µF 12R5G0W XXTTRR111124 B 9 3 R E G 8 1N4148 20kW IO 1kW 2 VI–N 7 I RET I = 4mA + (V+ –V–) 40 50W 6 O IN IN RG 25W R (2) CM NOTES: (1) For burn-out indication. (2) XTR112, R = 3.3kW CM XTR114, R = 8.2kW CM FIGURE 6. Thermocouple Low Offset, Low Drift Loop Measurement with Diode Cold-Junction Compensation. 12 1 1N4148 13 VI+VNLIN IR1 IR214V 11 10 +12V REG V+ 4 1µF R G 1R8.L7INk1W 12R7G0W XTR112 B 9 Q1 0.01µF 1610 11 3 E 8 3 12 R G 15 VO = 0 to 5V 2 VI–N IO7 2 RCV420 13 14 IRET 5 1P0t01°0C0 0to RTD RZ 6 IO = 4mA – 20mA 4 600°C 1370W 1µF –12V R CM NOTE: A two-wire RTD connection is shown. For remotely 0.01µF located RTDs, a three-wire RTD conection is recommended. R G becomes 1180W , R is 40.2kW . See Figure 3 and Table II. LIN2 FIGURE 7. – 12V Powered Transmitter/Receiver Loop. ® 15 XTR112, XTR114

12 RLIN1 RLIN2 13 VI+NVLINIR11 IR214VRE1G1V+10 1N4148 1µF +15V Isolated Power 4 RG 1µF 0 from PWS740 RG XXTTRR111124 B 9 Q1 0.01µF 1610 –15V 3 E 8 3 1112 RG 15 1 V+ IO RCV420 14 15 9 RZ 2 VI–NIRET 7 2 4 5 13 ISO124 10 87 0 V– O5V 6 IO = 4mA – 20mA 2 16 RTD V– NOTE: A three-wire RTD connection is shown. RCM For a two-wire RTD connection, eliminate RLIN2. 0.01µF FIGURE 8. Isolated Transmitter/Receiver Loop. 200µA (XTR114) 500µA (XTR112) 12 1 V LIN 14 I 13 VI+N R1 IR2 V 11 10 REG V+ 4 R G XTR112 9 RG XTR114 B 3 8 R E G 2 VI–N 7 I RET 6 R (1) CM NOTE: (1) Use R to adjust the CM common-mode voltage to within 1.25V to 3.5V. FIGURE 9. Bridge Input, Current Excitation. ® XTR112, XTR114 16

PACKAGE OPTION ADDENDUM www.ti.com 9-Dec-2004 PACKAGING INFORMATION OrderableDevice Status(1) Package Package Pins Package EcoPlan(2) Lead/BallFinish MSLPeakTemp(3) Type Drawing Qty XTR112U ACTIVE SOIC D 14 58 None CUSNPB Level-3-220C-168HR XTR112U/2K5 ACTIVE SOIC D 14 2500 None CUSNPB Level-3-220C-168HR XTR112UA ACTIVE SOIC D 14 58 None CUSNPB Level-3-220C-168HR XTR112UA/2K5 ACTIVE SOIC D 14 2500 None CUSNPB Level-3-220C-168HR XTR114U ACTIVE SOIC D 14 58 None CUSNPB Level-3-220C-168HR XTR114U/2K5 ACTIVE SOIC D 14 2500 None CUSNPB Level-3-220C-168HR XTR114UA ACTIVE SOIC D 14 58 None CUSNPB Level-3-220C-168HR XTR114UA/2K5 ACTIVE SOIC D 14 2500 None CUSNPB Level-3-220C-168HR (1)Themarketingstatusvaluesaredefinedasfollows: ACTIVE:Productdevicerecommendedfornewdesigns. LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect. NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartin anewdesign. PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable. OBSOLETE:TIhasdiscontinuedtheproductionofthedevice. (2)EcoPlan-Maynotbecurrentlyavailable-pleasecheckhttp://www.ti.com/productcontentforthelatestavailabilityinformationandadditional productcontentdetails. None:NotyetavailableLead(Pb-Free). Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirements forall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesoldered athightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, includingbromine(Br)orantimony(Sb)above0.1%oftotalproductweight. (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimited informationmaynotbeavailableforrelease. InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTI toCustomeronanannualbasis. Addendum-Page1

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