This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors XN01112 (XN1112) Silicon PNP epitaxial planar type Unit: mm For switching/digital circuits /21.9.90±+–000...10250 0.16+–00..0160 (0.95) (0.95) e ■ Features 3 4 5 •T(Ewmoi tetleerm-ceonutpsl eindc torrapnosriasttoedrs iwntioth o bnue iplta-icnk aregseistor) c d +0.251.50–0.05+0.22.8–0.3 5˚ 0.4±0.2 •Reduction of the mounting area and assembly cost bny one half 2 1 e0.30+–00..0150 65) ■ Basic Part Number a 10˚ (0. ge. a •UNR2112 (UN2112) × 2 n u cl+0.21.1–0.1e +0.3s1.1–0.1t ■ Absolute Maximum Ratings Ta = 25°C n ecy 0.1 Parameter eSymbol Rating Unit 1: Collector c(Tt rl1i)f 0 to 4: Emitter Collector-base voltage (Emitter open) V −50iV u CBO 2: Collecdtor (Tr2) 5: Base (Tr1) CCoolllleeccttoorr- ceumrirtetnert voltnage t(Base open) VICCEO n−−t15000 mVA ur3E :I ABPJar:s eoS C(T-7r24)A Mini5-G1 Package oMarking Symbol: 7K ■CCTJSutoooEMontllraclllaeeelt giccpoctteooon ttwrr ret--iembeeacmmraap sdpieiePltie r tsCavaersDatroriu tphalvurtamaaoeirtegilreoteaatn eg(cEert m(esBirtaitssecert ieooc/ppsceeD nni ))Tsac =oSTo PnTVVy2tsTitmjCCg5BEn°bOOCuole −±d5 IIi53CC p31°nt lo==05Cc a l00+−−1nu215 0edm0 µdeA pAls, m,amfI CmIBana°°Eoi iolCC= Wle=nn nt0 otdd0 eietwdiindoininnasassgncnc wfcocioenenn tI ttintgi yntynepuUpurenemeeRiaddLc l t toCayynob.ppnM−−opeTe55niuard23n00e2t nclataitsoTneo4ysnpti ic.ncfT15Moor.r1japxm/aetin/oUnVVn.it CCEmoollillteetccettroo-brr--abesmaes icetu tceturo tfcofu fctfou acifrufr enrcrtnuetrn e(rtCe n(noEtal ml(eBncitattoseerr ooopppeeennn))) IIICCEBBEOOO VVVCCEBEB === −−−5650 0V VV, v,I, i CII BEs=i t== 0 f00ollowww.se −−− 000...152 mµµAAA Forward current Mtransfer ratio hFE VCE = −1s0e V , IC = p−:5// mA 60  hFE Ratio * hFE(Small VCE =e −a10 V, IhCt t= −5 mA 0.50 0.99  Pl /Large) Collector-emitter saturation voltage V I = −10 mA, I = − 0.3 mA − 0.25 V CE(sat) C B Output voltage high-level V V = −5 V, V = − 0.5 V, R = 1 kΩ −4.9 V OH CC B L Output voltage low-level V V = −5 V, V = −2.5 V, R = 1 kΩ − 0.2 V OL CC B L Input resistance R −30% 22 +30% kΩ 1 Resistance ratio R / R 0.8 1.0 1.2  1 2 Transition frequency f V = −10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.*:Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00005BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). XN01112 P  T I  V V  I T a C CE CE(sat) C ()Total power dissipation P mWT524130000000000 ()Collector current I mAC−−−−1142860000 nIB = −1c.0 mA− −0 .09.mT8maeA− =−−−−−−A 0 0000002.7......5654321m/°mmmmmmCAAAAAAA ()ctor-emitter saturation voltage V VCE(sat)d−−−1 0−10.1100 −25°C 25°C ITCa /= I B7 =5° 1C0 ee oll e. 00 40 80 120 160 00a−2 −4 −6 −8 −10 −12 C− 0.0−1 0.1 −1 ag−10 −100 Ambient temperature Ta (°C) Collector-emitter voltage VuCE (V) Collectoer csutrrent IC (mA) n cl y n c e Forward current transfer ratio h() VFEN−M1234−10000100000000−1 Caolleic−t1oDVh0Mr FIcaNEiui rnrentne tI I− TCnOI1tCa0s a−V =VT02 2( 5aCOn7m 5E°= 5°= Cc= °AC2 C− 5−e) 0°/1C.0e2c− DVV1i 0s00coonCollector output capacitancet (pF)Ciob (Common base, input open circuited) nu−6543210e 0nd.1 CiopnltllcealcitnuoredC−-sb1deoa pebsls e m amfvviaonaoi isllViltenatntg oCtd−fpe 1eB:e w0 o/dVinfITld/in Eli=aC na =sa =Bsow1 g0 nc 2n cM (5wwfcVoc°iHoC)oeznw−enn t. 1tutitgi0sr 0yn ynepuUpuPreemeeRiod()Output current I µAdLc O dtto−−−auy−yn111−1cb.000pp−t01234 op0eel.i4uadft nl−aa 0Itsn.6peousntIti −vO ico0 ..l8tnacfg ooeV.− rj 1VI.Np0Im/N a e(tTViV−naO 1/)= o.=2 2 n−5.5° CV−1.4 ge VI −1 Plea htt a olt v ut p n I− 0.1 − 0.01 − 0.1 −1 −10 −100 Output current I (mA) O 2 SJJ00005BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl