XBS104V14R-G ETR1610-002 Schottky Barrier Diode, 1A, 40V Type ■FEATURES ■APPLICATIONS Forward Voltage : VF=0.365V (TYP.) ●Rectification Forward Current : I =1A ●Protection against reverse connection of battery F(AV) Repetitive Peak Reverse Voltage : V =40V RM Environmentally Friendly : EU RoHS Compliant, Pb Free ■ABSOLUTE MAXIMUM RATINGS ■PACKAGING INFORMATION Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 40 V Reverse Voltage (DC) VR 40 V Forward Current (Average) IF(AV) 1 A Non Continuous IFSM 20 A Forward Surge Current*1 Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -55～+150 ℃ *1： Non continuous high amplitude 60Hz half-sine wave. * When the IC is operated continuously under high load conditions such as high temperature, Cathode Bar high current and high voltage, it may have the case that reliability reduces drastically even if under the absolute maximum ratings. Adequate “Derating” should be taken into consideration while designing. ■MARKING RULE ①: 0 (Product Number) SOD-123A Unit : mm ②: Assembly Lot Number ■PRODUCT NAME PRODUCT NAME DEVICE ORIENTATION XBS104V14R-G SOD-123A(Halogen & Antimony free) XBS104V14R SOD-123A * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ■ELECTRICAL CHARACTERISTICS Ta=25℃ LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN. TYP. MAX. VF1 IF=100mA - 0.23 0.315 V Forward Voltage VF2 IF=500mA - 0.30 0.385 V VF3 IF=1A - 0.365 0.41 V Reverse Current IR VR=40V - 0.25 2 mA Inter-Terminal Capacity Ct V =1V , f=1MHz - 150 - pF R Reverse Recovery Time*2 trr I =I =10mA , irr=1mA - 41 - ns F R *2：trr measurement circuit Bias Device Under test Pulse Generatrix Oscilloscope 1/3

XBS104V14R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage 1 100 Ta=125℃ Forward Current: I(A) Forward Current　I (A)F F 0.00.11 75℃ 2-52℃5℃ Reverse Current: I(mA) R Reverse Current　I (mA)R 0.001.1110 T725a5℃=℃100℃ 0.001 0.001 0 0.2 0.4 0.6 0 10 20 30 40 FoFrowrawradr dV Volotaltgaege: 　VVF (FV (V) ) RReevveerrssee V Vooltlataggee:　 VVRR ( V(V) ) (3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature 0.6 100 V=10V R 5V 1V 10 Forward Voltage: V(V) Forward Voltage　V (V)F F 00..24 I0F.=51AA μReverse Current: I(A) R Reverse Current　I (uA)R 0.00.111 0.1A 0.0 0.001 -50 0 50 100 150 0 50 100 150 OpOepreartiantgin Tge Tmepmepreartautruer:e T　aT (a℃ (℃) ) OOppeerraattiningg TTeemmppeerraattuurree:　 TTaa ( ℃(℃) ) (5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature 500 2.0 minal Capacity: C(pF) terminal Capacity　Ct (pF) 234000000 Forward Current: IF(A) AV Forward Current　IF (A)AV 11..05 nter-TerInter-T 100 Average Average 0.5 I 0 0.0 0 10 20 30 40 0 50 100 150 ReRveevresres eV oVlotaltgaeg:e V　RV (RV (V) ) OOppeerraattiinngg TTeemmppeerraattuurree　: TTaa ((℃℃)) 2/3

XBS104V14R-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 3/3