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XBS104S13R-G产品简介:
ICGOO电子元器件商城为您提供XBS104S13R-G由TOREX SEMICONDUCTOR设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 XBS104S13R-G价格参考。TOREX SEMICONDUCTORXBS104S13R-G封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 40V 1A SOD-323A。您可以下载XBS104S13R-G参考资料、Datasheet数据手册功能说明书,资料中有XBS104S13R-G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 40V 1A SOD323 |
产品分类 | 单二极管/整流器 |
品牌 | Torex Semiconductor Ltd |
数据手册 | |
产品图片 | |
产品型号 | XBS104S13R-G |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同If时的电压-正向(Vf) | 540mV @ 1A |
不同 Vr、F时的电容 | 35pF @ 10V,1MHz |
不同 Vr时的电流-反向漏电流 | 200µA @ 40V |
二极管类型 | 肖特基 |
供应商器件封装 | SOD-323A |
其它名称 | 893-1188-2 |
包装 | 带卷 (TR) |
反向恢复时间(trr) | 25ns |
安装类型 | 表面贴装 |
封装/外壳 | SC-76,SOD-323 |
工作温度-结 | 125°C (最大) |
标准包装 | 3,000 |
热阻 | - |
电压-DC反向(Vr)(最大值) | 40V |
电流-平均整流(Io) | 1A |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
XBS104S13R-G ETR1608-003 Schottky Barrier Diode, 1A, 40V Type ■FEATURES ■APPLICATIONS Forward Voltage : V =0.49V (TYP.) ●Rectification F Forward Current : I =1A ●Protection against reverse connection of battery F(AV) Repetitive Peak Reverse Voltage : V =40V RM Environmentally Friendly : EU RoHS Compliant, Pb Free ■ABSOLUTE MAXIMUM RATINGS ■PACKAGING INFORMATION Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 40 V Reverse Voltage (DC) VR 40 V Forward Current (Average) IF(AV) 1 A Non Continuous IFSM 10 A Forward Surge Current *1 Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -55~+150 ℃ *1:Non continuous high amplitude 60Hz half-sine wave. ■ MARKING RULE Cathode Bar ①② ①: 1 (Product Number) ②: Assembly Lot Number Unit : mm SOD-323A ■PRODUCT NAME PRODUCT NAME DEVICE ORIENTATION XBS104S13R-G SOD-323A (Halogen & Antimony free) XBS104S13R SOD-323A * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ■EL ECTRICAL CHARACTERISTICS Ta=25℃ LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN. TYP. MAX. Forward Voltage VF1 IF=100mA - 0.34 - V VF2 IF=1A - 0.49 0.54 V Reverse Current IR VR=40V - 4 200 μA Inter-Terminal Capacity Ct V =10V , f=1MHz - 35 - pF R Reverse Recovery Time *2 trr I =I =10mA , irr=1mA , R=100Ω - 25 - ns F R L *2:trr measurement circuit Bバiaイsア ス De被v測ic定e ダUイnオdeーrド Test IF trr Oscilloscope Pulse Geパneルraスt発rix生器 オシロスコープ t 0 A irr IR 1/3
XBS104S13R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage 1 10000 Ta=125℃ A) A) μA) uA) 1000 Current: I(F Current I (F 0.1 Ta=125℃ Current: I(R Current I (R 100 75℃ Forward Forward 0.01 75℃ 25℃ -20℃ Reverse Reverse 110 25℃ 0.001 0.1 0 0.2 0.4 0.6 0 10 20 30 40 FoFrowrawradr dV Volotaltgaege: VVF (FV (V) ) RReevveerrssee V Vooltlataggee: VVRR ( V(V) ) (3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature 0.6 10000 VR=40V 20V 1000 oltage: V(V) Voltage V (V)F F 0.4 0IF.5=A1A μurrent: I(A) R Current I (uA)R 100 5V Forward VForward 0.2 0.1A Reverse CReverse 110 0.01A 0.0 0.1 -50 0 50 100 150 0 50 100 150 OpOepreatriantgin Tge Tmepmepraetruarteu reT: aT a(℃ (℃) ) OOppeerraattiningg TTeemmppeerraattuurree: TTaa ( ℃(℃) ) (5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature 200 2.0 minal Capacity: C(pF) terminal Capacity Ct (pF) 110500 Forward Current: IF(A) AV Forward Current IF (A)AV 11..05 nter-TerInter-T 50 Ta=25℃ Average Average 0.5 I 0 0.0 0 10 20 30 40 0 50 100 150 ReRveevresres eV oVltoaltgaeg:e V RV (RV ()V ) OOppeerraattiinngg TTeemmppeerraattuurree : TTaa ((℃℃)) 2/3
XBS104S13R-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 3/3