VVZF 70-16io7 Three Phase Rectifier Bridge I = 70 A dAV V = 1600 V RRM 1 3 2 V V Type A RSM RRM V V DSM DRM C V V D E 1700 1600 VVZF 70-16io7 B Features Symbol Conditions Maximum Ratings • Package with copper base plate I  T = 85°C, module 70 A dAV C • Isolation voltage 3000 V~ I  module 70 A dAVM • Planar passivated chips I , I per leg 36 A FRMS TRMS • Low forward voltage drop I , I T = 45°C; t = 10 ms (50 Hz) 550 A FSM TSM VJ • ¼" fast-on power terminals V = 0 t = 8.3 ms (60 Hz) 600 A R T = T ; t = 10 ms (50 Hz) 500 A Applications VJ VJM V = 0 t = 8.3 ms (60 Hz) 550 A R • Supplies for DC power equipment I2t T = 45°C; t = 10 ms (50 Hz) 1520 A2s • Input rectifiers for PWM inverter VJ V = 0 t = 8.3 ms (60 Hz) 1520 A2s • Battery DC power supplies R • Field supply for DC motors T = T ; t = 10 ms (50 Hz) 1250 A2s VJ VJM V = 0 t = 8.3 ms (60 Hz) 1250 A2s R Advantages (di/dt) T = 125°C repetitive; I = 50 A 150 A/µs cr VJ T • Easy to mount with two screw f = 50 Hz; tp = 200 µs • Space and weight savings VD = 2/3 VDRM non repetitive; 500 A/µs • Improved temperature & IG = 0.3 A IT = ½IdAV power cycling capability diG /dt = 0.3 A/µs • Small and light weight (dv/dt) T = T ; V = 2/ V 1000 V/µs cr VJ VJM D 3 DRM R = , method 1 (linear voltage rise) GK h V 10 V RGM P T = T t = 30 µs 10 W GM VJ VJM p I = I t = 500 µs 5 W T TAVM p t = 10 µs 1 W p P 0.5 W GAVM T -40...+125 °C VJ T 125 °C VJM T -40...+125 °C stg V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL I < 1 mA t = 1 s 3000 V~ ISOL M Mounting torque (M5) 5 ±15% Nm d (10-32 UNF) 44 ±15% lb.in. Weight Typ. 100 g Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20100708b © IXYS All rights reserved 1 - 2

VVZF 70-16io7 Symbol Conditions Characteristic Values I ; I V = V ; V = V T = T < 5 mA D R R RRM D DRM VJ VJM V I = 80 A T = 25°C < 1.64 V T T VJ V For power-loss calculations only 0.85 V T0 r 11 mW t V V = 6 V T = 25°C < 1.5 V GT D VJ T = -40°C < 1.6 V VJ I V = 6 V T = 25°C < 100 mA GT D VJ T = -40°C < 200 mA VJ V V = 2/V T = T < 0.2 V GD D 3 DRM VJ VJM I < 5 mA GD I t = 10 µs T = 25°C < 450 mA L p VJ I = 0.45 A; di /dt = 0.45 A/µs G G I V = 6 V; R = T = 25°C < 200 mA H D GK h VJ t V = ½V T = 25°C < 2 µs gd D DRM VJ I = 0.45 A; di /dt = 0.45 A/µs G G t I = 20 A; t = 200 µs T = 25°C < 250 µs q T p VJ V = 100 V; di/dt = -10 A/µs R dv/dt = -15 V/µs; V = 2/ V D 3 DRM R per thyristor / diode; DC 0.9 K/W thJC per module 0.15 K/W R per thyristor / diode; DC 1.1 K/W thJH per module 0.157 K/W d Creeping distance on surface 16.1 mm S d Creepage distance in air 7.5 mm A a Max. allowable acceleration 50 m/s2 Dimensions in mm (1 mm = 0.0394“) IXYS reserves the right to change limits, test conditions and dimensions. 20100708b © IXYS All rights reserved 2 - 2

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