End of Life April-2020 - Alternative Device: VSMY2893SLX01 VSMF2893SLX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH FEATURES • Package type: surface-mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • AEC-Q101 qualified • Peak wavelength: λ = 890 nm p • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation • Package matches with detector VEMD2xx3SSLX01 an d DESCRIPTION VEMT2xx3SLX01 series VSMF2893SLX01 is an infrared, 890 nm, side looking • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 emitting diode in GaAlAs (DH) technology with high radiant • Material categorization: for definitions of complianc e power and high speed, molded in clear, untinted plasti c please see www.vishay.com/doc?99912 package (with lens) for surface mounting (SMD). APPLICATIONS • IrDA compatible data transmission • 3D TV • IR touch panels • Miniature light barrier • Photointerrupters • Optical switch • Shaft encoders • IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT I (mW/sr) ϕ (deg) λ (nm) t (ns) e p r VSMF2893SLX01 20 ± 25 890 30 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF2893SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note • MOQ: minimum order quantity Rev. 1.1, 30-Sep-2019 1 Document Number: 83483 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

End of Life April-2020 - Alternative Device: VSMY2893SLX01 VSMF2893SLX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5 V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 μs I 200 mA p p FM Surge forward current t = 100 μs I 1 A p FSM Power dissipation P 160 mW V Junction temperature T 100 °C j Operating temperature range T - 40 to + 85 °C amb Storage temperature range T - 40 to + 100 °C stg Soldering temperature Acc. figure 9, J-STD-020 T 260 °C sd J-STD-051, leads 7 mm, Thermal resistance junction/ambient R 250 K/W soldered on PCB thJA 180 120 160 mW) 140 mA) 100 on ( 120 nt ( 80 P - Power DissipatiV 146800000 RthJA = 250 K/W I - Forward CurreF 246000 RthJA = 250 K/W 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 21343 Tamb - Ambient Temperature (°C) 21344 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERSITICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.4 1.6 V F p F Forward voltage I = 1 A, t = 100 μs V 2.3 V F p F I = 1 mA TK - 1.8 mV/K F VF Temperature coefficient of V F I = 100 mA TK - 1.1 mV/K F VF Reverse current V = 5 V I 10 μA R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm2 C 125 pF R J I = 100 mA, t = 20 ms I 10 20 30 mW/sr F p e Radiant intensity I = 1 A, t = 100 μs I 180 mW/sr F p e Radiant power I = 100 mA, t = 20 ms φ 40 mW F p e Temperature coefficient of φ I = 100 mA TKφ - 0.35 %/K e F e Angle of half intensity ϕ ± 25 deg Peak wavelength I = 30 mA λ 870 890 910 nm F p Spectral bandwidth I = 30 mA Δλ 40 nm F Temperature coefficient of λ I = 30 mA TKλ 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 30 ns F r Fall time I = 100 mA, 20 % to 80 % t 30 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 12 MHz DC AC c Rev. 1.1, 30-Sep-2019 2 Document Number: 83483 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

End of Life April-2020 - Alternative Device: VSMY2893SLX01 VSMF2893SLX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERSITICS (T = 25 °C, unless otherwise specified) amb 1000 1.25 er w ent (mA) 100 diant Po 0.17.50 urr Ra C t = 100 µs e ward 10 tpp/T = 0.001 elativ 0.5 I - ForF Φ- Re rel 0.25 1 0 0 1 2 3 4 800 900 1000 18873_1 VF - Forward Voltage (V) 20082 λ - Wavelength (nm) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Power vs. Wavelength 0° 10° 20° 110 %) 30° e ( 108 y Voltag 110046 ntensit ment Forward 110002 IF = 100 mA Radiant I 01..90 4500°° Displace Relative 9968 tp = 20 ms IF = 10 mA Relative 0.8 60° Angular V - F, rel 9924 IF = 1 mA I - e rel 0.7 7800°° ϕ - 90 - 40 - 20 0 20 40 60 80 100 0.6 0.4 0.2 0 21443 Tamb - Ambient Temperature (°C) 22694 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1000 1000 tp/T = 0.01 Tamb < 50 °C W/sr) 100 tp = 100 µs mA) 0.020.05 y (m ent ( 0.1 sit urr n C ant Inte 10 orward 0.2 di F Ra 1 - F 0.5 - e I I 100 0.1 0.01 0.1 1 10 100 0.001 0.01 0.1 1 16031 tp - Pulse Duration (ms) I - Forward Current (A) F Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Pulse Forward Current vs. Pulse Duration Rev. 1.1, 30-Sep-2019 3 Document Number: 83483 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

End of Life April-2020 - Alternative Device: VSMY2893SLX01 VSMF2893SLX01 www.vishay.com Vishay Semiconductors SOLDER PROFILE Axis Title 300 10000 Max. 260 °C 250 255 °C 240 °C 245 °C 217 °C C) 200 1000 2nd lineperature (° 150 Max. 120 s MMaaxx. .1 3000 ss 1st line2nd line m e 100 100 T Max. ramp down 6 °C/s 50 Max. ramp up 3 °C/s 0 10 0 50 100 150 200 250 300 19841 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption durin g transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: T < 30 °C, RH < 60 % amb Moisture sensitivity level 2a, acc. to J-STD-020. DRYING In case of moisture absorption devices should be bake d before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Rev. 1.1, 30-Sep-2019 4 Document Number: 83483 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

End of Life April-2020 - Alternative Device: VSMY2893SLX01 VSMF2893SLX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMF2893SLX01 Rev. 1.1, 30-Sep-2019 5 Document Number: 83483 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

End of Life April-2020 - Alternative Device: VSMY2893SLX01 VSMF2893SLX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMF2893SLX01 Rev. 1.1, 30-Sep-2019 6 Document Number: 83483 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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