VS-40L15CTPbF, VS-40L15CT-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common • 125 °C T operation (V < 5 V) J R cathode • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance TO-220AB 1 Common 3 cathode • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY • Designed and qualified according to JEDEC-JESD47 Package TO-220AB • Halogen-free according to IEC 61249-2-21 definition I 2 x 20 A (-N3 only) F(AV) V 15 V R DESCRIPTION V at I See Electrical table F F This center tap Schottky rectifier has been optimized for I max. 600 mA at 100 °C RM very low forward voltage drop, with moderate leakage. The T max. 125 °C proprietary barrier technology allows for reliable operation J up to 125 °C junction temperature. Typical applications are Diode variation Common cathode in switching power supplies, converters, freewheeling EAS 10 mJ diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 40 A V 15 V RRM I t = 5 μs sine 700 A FSM p V 19 A , T = 125 °C (per leg) 0.25 V F pk J TJ Range - 55 to 125 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-40L15CTPbF VS-40L15CT-N3 UNITS Maximum DC reverse voltage V R 15 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 20 forward current IF(AV) 50 % duty cycle at TC = 85 °C, rectangular waveform See fig. 5 per device 40 A Maximum peak one cycle non-repetitive 5 μs sine or 3 μs rect. pulse Following any rated 700 surge current per leg IFSM load condition and with See fig. 7 10 ms sine or 6 ms rect. pulse rated VRRM applied 330 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ Current decaying linearly to zero in 1 μs Repetitive avalanche current per leg IAR Frequency limited by T maximum V = 1.5 x V typical 2 A J A R Revision: 29-Aug-11 1 Document Number: 94216 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40L15CTPbF, VS-40L15CT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 19 A - 0.41 T = 25 °C J Forward voltage drop per leg 40 A - 0.52 V (1) V See fig. 1 FM 19 A 0.25 0.33 T = 125 °C J 40 A 0.37 0.50 Reverse leakage current per leg TJ = 25 °C - 10 I (1) V = Rated V mA See fig. 2 RM T = 100 °C R R - 600 J Threshold voltage VF(TO) 0.182 V T = T maximum J J Forward slope resistance rt 7.6 m(cid:58) Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8 - nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 125 °C temperature range J Stg Maximum thermal resistance, junction to case per leg RthJC DC operation 1.5 °C/W Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 2 g Approximate weight 0.07 oz. minimum 6 (5) kgf · cm Mounting torque maximum 12 (10) (lbf · in) Marking device Case style TO-220AB 40L15CT Revision: 29-Aug-11 2 Document Number: 94216 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40L15CTPbF, VS-40L15CT-N3 www.vishay.com Vishay Semiconductors A) 1000 1000 nt ( re A) TJ = 100 °C d Cur 100 nt (m 100 TJ = 75 °C r e a r w ur s For TJ = 125 °C se C 10 TJ = 50 °C ntaneou 10 TTJJ == 7255 °°CC - ReverR 1 TJ = 25 °C a I st n I - IF 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.10 3 6 9 12 15 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. (Per Leg) Reverse Voltage (Per Leg) 10 000 F) p e ( c n a acit TJ = 25 °C p a 1000 C n o cti n u J - T C 100 0 5 10 15 20 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 W) C/ ° e ( c n a 1 d e p m D = 0.75 PDM al I D = 0.50 t m D = 0.33 1 her 0.1 DD == 00..2250 t2 T Notes: - C (theSrminagl lere psuisltsaence) 1. Duty factor D = t1/t2 ZthJ 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t - Rectangular Pulse Duration (s) 1 Fig. 4 - Maximum Thermal Impedance Z Characteristics (Per Leg) thJC Revision: 29-Aug-11 3 Document Number: 94216 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40L15CTPbF, VS-40L15CT-N3 www.vishay.com Vishay Semiconductors 100 14 C) D = 0.20 ° ature ( 95 s (W) 1102 DDD === 000...235530 emper 90 Square wave (D = 0.50) er Los 8 D = 0.75 RMS limit T 85 w se Po 6 Ca 80 ge e a 4 bl er a v DC w 75 A Allo See note (1) 2 70 0 0 4 8 12 16 20 24 0 5 10 15 20 25 30 I - Average Forward Current (A) I - Average Forward Current (A) F(AV) F(AV) Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics (Per Leg) Average Forward Current (Per Leg) A) 1000 nt ( e r r u C e g r u S e v etiti Aant da nwyi trha treadte ldo aVd co nadpiptioliend p RRM e following surge R n- o N - M 100 S F 10 100 1000 10 000 I t - Square Wave Pulse Duration (μs) p Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed IRFP460 switch D.U.T. Rg = 25 Ω Fredeiowdheeel + Vd = 25 V Current monitor 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd ) x R ; C J REV thJC Pd = Forward power loss = I x V at (I /D) (see fig. 6); F(AV) FM F(AV) Pd = Inverse power loss = V x I (1 - D); I at V = 10 V REV R1 R R R1 Revision: 29-Aug-11 4 Document Number: 94216 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40L15CTPbF, VS-40L15CT-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 L 15 C T PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Schottky “L” series 4 - Voltage rating (15 = 15 V) 5 - C = Common cathode 6 - Package: T = TO-220 7 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40L15CTPbF 50 1000 Antistatic plastic tube VS-40L15CT-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 Part marking information TO-220AB -N3 www.vishay.com/doc?95028 Revision: 29-Aug-11 5 Document Number: 94216 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches B (6) A Seating E plane Thermal pad Ø P A A E2 (7) 0.014MBAM (E) A1 Q 1 2 3 (6) (H1) D D H1 L1 (2) (7) C C D2 (6) (6) D Detail B D1 3 x b 3 x b2 1 2 3 Detail B C E1 (6) L Base metal (b, b2) Plating View A - A c c1 (4) c A 2 x e A2 (4) e1 b1, b3 0.015MBAM Section C - C and D - D Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode MILLIMETERS INCHES MILLIMETERS INCHES SYMBOL NOTES SYMBOL NOTES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6 A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6 A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147 D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 (cid:84) 90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (7) Dimensions E2 x H1 define a zone where stamping and (2) Lead dimension and finish uncontrolled in L1 singulation irregularities are allowed (3) Dimension D, D1 and E do not include mold flash. Mold flash (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and shall not exceed 0.127 mm (0.005") per side. These dimensions D2 (minimum) where dimensions are derived from the actual are measured at the outermost extremes of the plastic body package outline (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

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