VS-40HF(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 40 A FEATURES • High surge current capability • Stud cathode and stud anode version • Leaded version available • Types up to 1600 V V RRM • Designed and qualified for multiple level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) TYPICAL APPLICATIONS • Battery charges PRIMARY CHARACTERISTICS • Converters I 40 A F(AV) • Power supplies Package DO-5 (DO-203AB) Circuit configuration Single • Machine tool controls • Welding MAJOR RATINGS AND CHARACTERISTICS 40HF(R) PARAMETER TEST CONDITIONS UNITS 10 TO 120 140/160 40 40 A I F(AV) T 140 110 °C C I 62 62 A F(RMS) 50 Hz 570 570 I A FSM 60 Hz 595 595 50 Hz 1600 1600 I2t A2s 60 Hz 1450 1450 V Range 100 to 1200 1400 to 1600 V RRM T -65 to 190 -65 to 160 °C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM VOLTAGE RRM RSM RRM TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM CODE J J V V mA 10 100 200 20 200 300 40 400 500 60 600 700 9 VS-40HF(R) 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 4.5 160 1600 1700 Revision: 07-Sep-17 1 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40HF(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION 40HF(R) PARAMETER SYMBOL TEST CONDITIONS UNITS 10 TO 120 140/160 Maximum average forward current  40 40 A I 180° conduction, half sine wave at case temperature F(AV) 140 110 °C Maximum RMS forward current I 62 A F(RMS) t = 10 ms No voltage  570 Maximum peak, one-cycle forward, t = 8.3 ms reapplied 595 I A non-repetitive surge current FSM t = 10 ms 100 % VRRM 480 t = 8.3 ms reapplied Sinusoidal half wave, 500 t = 10 ms No voltage  initial TJ = TJ maximum 1600 t = 8.3 ms reapplied 1450 Maximum I2t for fusing I2t A2s t = 10 ms 100 % VRRM 1150 t = 8.3 ms reapplied 1050 Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s Value of threshold voltage V 0.65 (up to 1200 V) F(TO) T = T maximum V Value of threshold voltage J J V 0.76 (for 1400 V/1600 V) F(TO) Value of forward slope resistance r 4.29 (up to 1200 V) f Value of forward slope resistance TJ = TJ maximum m r 3.8 (for 1400 V/1600 V) f Maximum forward voltage drop V I = 125 A, T = 25 °C, t = 400 μs rectangular wave 1.30 1.50 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS 40HF(R) PARAMETER SYMBOL TEST CONDITIONS UNITS 10 to 120 140 to 160 Maximum junction operating and T , T -65 to 190 -65 to 160 °C storage temperature range J Stg Maximum thermal resistance, R DC operation 0.95 junction to case thJC K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.25 case to heatsink thCS Not lubricated thread, tighting on nut (1) 3.4 (30) Maximum allowable mounting Lubricated thread, tighting on nut (1) 2.3 (20) N · m torque (+0 %, -10 %) Not lubricated thread, tighting on hexagon (2) 4.2 (37) (lbf · in) Lubricated thread, tighting on hexagon (2) 3.2 (28) 17 g Approximate weight 0.6 oz. Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB) Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.14 0.10 120° 0.16 0.17 90° 0.21 0.22 T = T maximum K/W J J 60° 0.30 0.31 30° 0.50 0.50 Note • The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 07-Sep-17 2 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40HF(R) Series www.vishay.com Vishay Semiconductors C) 190 C) 160 e (° 40HF(R) Series (100 V to 1200 V) e (° 40HF(R) Series (1400 V, 1600 V) ur 180 ur 150 at at er er mp 170 Conduction Angle mp 140 Conduction Angle e e T T se 160 se 130 a a C C ble 150 ble 120 a a 30° w 30° w 60° Allo 140 60° 90° 120° Allo 110 90° 120° m 180° m 180° u 130 u 100 m m xi 0 5 10 15 20 25 30 35 40 45 xi 0 5 10 15 20 25 30 35 40 45 a a M Average Forward Current (A) M Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics C) 190 C) 160 re (° 180 40HF(R) Series (100 V to 1200 V) re (° 150 40HF(R) Series (1400 V, 1600 V) u u at at r r 140 e 170 e mp Conduction Period mp Conduction Period e e 130 T 160 T se se 120 Ca 150 Ca e 30° e 110 30° wabl 140 60° 90° wabl 100 60° 90° o o All 130 120° All 90 120° m 180° DC m 180° DC mu 120 mu 80 xi 0 10 20 30 40 50 60 70 xi 0 10 20 30 40 50 60 70 a a M Average Forward Current (A) M Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics W) 60 ower Loss ( 4500 118296300000°°°°° 3 K/W2 K/W1.5 K/WRthSA = 1 K/W d P - D war 30 RMS Limit 5 K/W elta R For 7 K/W e 20 verag 10 C4o0nHdFu(Rct)i oSne rAiensgle 10 K/W A (100 V to 1200 V) m Tj = 190°C u 0 m xi 0 5 10 15 20 25 30 35 40 40 80 120 160 200 a M Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 5 - Forward Power Loss Characteristics Revision: 07-Sep-17 3 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40HF(R) Series www.vishay.com Vishay Semiconductors W) 60 DC ower Loss ( 4500 118296300000°°°°° 3 K/W2 K/W1.5 K/WRthSA = 1 K/W d P - D war 30 RMS Limit 5 K/W elta R For 7 K/W e 20 Conduction Period g Avera 10 4(100H0F V(R t)o S 1e2r0ie0s V) 10 K/W m Tj = 190 °C u 0 m xi 0 10 20 30 40 50 60 7 0 40 80 120 160 200 a M Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 6 - Forward Power Loss Characteristics W) 50 180° ower Loss ( 344505 129630000°°°° 3 K/W2 K/W1.5 K/WRthSA = 1 K/W e Forward P 12235050 RMS Limit Conduction Angle 1705 KKK///WWW - Delta R g a er 10 40HF(R) Series v (1400 V, 1600 V) A 5 m Tj = 160 °C u 0 m 0 10 20 30 40 25 50 75 100 125 150 175 200 xi a M Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - Forward Power Loss Characteristics W) 70 Power Loss ( 5600 1182963D00000C°°°°° 2 K1/.W5 K/WRthSA = 1 K/W - ard 40 3 K/W Delta R w RMS Limit For 30 Conduction Period 5 K/W ge 20 7 K/W ra 40HF(R) Series e Av 10 (1400 V, 1600 V) 10 K/W m Tj = 160°C u 0 m 0 10 20 30 40 50 60 7 0 40 80 120 160 xi a M Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 8 - Forward Power Loss Characteristics Revision: 07-Sep-17 4 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40HF(R) Series www.vishay.com Vishay Semiconductors Current (A) 455505000 At RAantye dR aVtrermd ALpopaldie Cd oFnodll@@Iiontiw io65tini00an l Ag HHT nSzzj d =u00 Wr..Tg00jei01 tM.h8030a xss. Current (A) 1000 ward 345000 ward 100 Wave For 235000 ous For 10 TTJJ == 2T5J M°Cax. e ne 200 an alf Si 150 40HF(R) Series stant 4u0pH toF (1R2) 0S0e rVies H n ak 100 1 10 100 I 10.5 1 1.5 2 2.5 3 3.5 4 4.5 5 e P Number Of Equal Amplitude Instantaneous Forward Voltage (V) Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 11 - Forward Voltage Drop Characteristics (Up To 1200 V) ward Current (A) 445560505000000 Maximum NVoner RsuespNR ePoatut iVetlisIdvonee litV t aTiSragrrmulae r Ti RgnRj ee=De a CauTpprujpa prMltrilieeioeandndxt.. ward Current (A) 1010000 TJ = TJ Max. Wave For 233505000 eous For 10 TJ = 25°C Sine 200 ntan 40HF (R) Series alf 150 40HF(R) Series sta H n k 100 I 1 a 0.01 0.1 1 0 0.5 1 1.5 2 2.5 3 3.5 4 e P Pulse Train Duration (s) Instantaneous Forward Voltage (V) Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 12 - Forward Voltage Drop Characteristics (For 1400 V/1600 V) W) 1 K/ Steady State Value e ( (DC Operation) c n a d e p m al I 0.1 m r e h T nt e 40HF(R) .. Series si n a Tr 0.01 -C 0.0001 0.001 0.01 0.1 1 10 J Zth Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance Z Characteristics thJC Revision: 07-Sep-17 5 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40HF(R) Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 HF R 160 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - 40 = standard device 41 = not isolated lead 42 = isolated lead with silicone sleeve (red = reverse polarity) (blue = normal polarity) 3 - HF = standard diode 4 - None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = V (see Voltage Ratings table) RRM 6 - None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A M = stud base DO-5 (DO-203AB) M6 x 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95344 Revision: 07-Sep-17 6 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series DIMENSIONS FOR 40HF(R) SERIES in millimeters (inches) Ø 14.6 (0.57) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 ± 0.4 (0.44 ± 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) 17.40 (0.68) Document Number: 95344 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 29-Sep-08 1

Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series DIMENSIONS FOR 41HF(R) SERIES in millimeters (inches) 11 (0.43) MAX. Ø 6.3 (0.25) MAX. 107 (4.21) MAX. 118.5 (4.67) MAX. www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95344 2 Revision: 29-Sep-08

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: VS-40HF160 VS-41HF10 VS-41HF80 VS-42HF60 VS-41HFR20 VS-42HF20 VS-42HF40 VS-42HFR40 VS- 41HFR10 VS-42HF100 VS-42HF140 VS-42HFR140 VS-42HFR20 VS-42HF160 VS-42HFR120 VS-42HF120 VS- 40HF140 VS-40HF10 VS-40HF100 VS-40HF120 VS-40HF40 VS-40HF60 VS-40HF80 VS-40HFR10 VS- 40HFR100 VS-40HFR120 VS-40HFR140 VS-40HFR160 VS-40HFR20 VS-40HFR40 VS-40HFR60 VS-40HFR80 VS-41HF100 VS-41HF120 VS-41HF40 VS-41HF60 VS-41HFR120 VS-41HFR40 VS-40HF20 VS-41HFR100 VS- 42HF80 VS-42HFR160 VS-42HFR100 VS-41HF20 VS-41HFR140 VS-41HFR80 VS-42HFR80 VS-41HFR60 VS- 42HFR60 VS-41HF140 VS-40HFR120M VS-40HF120M VS-40HF140M