VS-12F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 12 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V V RRM • Designed and qualified for industrial and consumer level DO-4 (DO-203AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS • Battery charges I 12 A F(AV) • Converters Package DO-4 (DO-203AA) Circuit configuration Single • Power supplies • Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 12 A I F(AV) T 144 °C C I 19 A F(RMS) 50 Hz 265 I A FSM 60 Hz 280 50 Hz 351 I2t A2s 60 Hz 320 V Range 100 to 1200 V RRM T -65 to +175 °C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM I MAXIMUM TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE RRM AT T = 175 °C NUMBER CODE REVERSE VOLTAGE PEAK VOLTAGE J mA V V 10 100 150 20 200 275 40 400 500 VS-12F(R) 60 600 725 12 80 800 950 100 1000 1200 120 1200 1400 Revision: 11-Jan-18 1 Document Number: 93487 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-12F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current  12 A I 180° conduction, half sine wave at case temperature F(AV) 144 °C Maximum RMS forward current I 19 A F(RMS) t = 10 ms No voltage 265 Maximum peak, one-cycle forward, t = 8.3 ms reapplied 280 I A non-repetitive surge current FSM t = 10 ms 100 % VRRM 225 t = 8.3 ms reapplied Sinusoidal half wave, 235 t = 10 ms No voltage initial TJ = TJ maximum 351 t = 8.3 ms reapplied 320 Maximum I2t for fusing I2t A2s t = 10 ms 100 % VRRM 250 t = 8.3 ms reapplied 226 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3510 A2s Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.77 V High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.97 Low level value of forward  slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 10.70 m High level value of forward  slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 6.20 Maximum forward voltage drop V I = 38 A, T = 25 °C, t = 400 μs rectangular wave 1.26 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range T -65 to +175 J °C Maximum storage temperature range T -65 to +200 Stg Maximum thermal resistance, junction to case R DC operation 2 thJC K/W Maximum thermal resistance, case to heatsink R Mounting surface, smooth, flat and greased 0.5 thCS 1.5 + 0 - 10 % N · m Not lubricated threads 13 lbf · in Allowable mounting torque 1.2 + 0 - 10 % N · m Lubricated threads 10 lbf · in 7 g Approximate weight 0.25 oz. Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.33 0.26 120° 0.41 0.44 90° 0.53 0.58 T = T maximum K/W J J 60° 0.78 0.81 30° 1.28 1.29 Note • The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 2 Document Number: 93487 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-12F(R) Series www.vishay.com Vishay Semiconductors 180 180 12F(R) Series 12F(R) Series R t h J C (DC) = 2.0 K/W R t h J C (DC) = 2.0 K/W aximum Allowable se Temperature (°C) 116700 Conduction Angle ximum Allowable e Temperature (°C) 111567000 30° 60° Conduction Period Ma 150 as C Ma 140 90° 30° 60° C 120° 90° 120° 180° 180° DC 140 130 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 14 Forward W) 1102 118296300000°°°°° 151K2/KW/W10K/W RthSA=8K/W6-KD/WeltaR age oss ( 8 RMS Limit 20K/W erL Aver 6 30K/W m ow Conduction Angle uP 4 m xi 12F(R) Series a 2 M T = 175°C J 0 0 2 4 6 8 10 12 1 4 25 50 75 100 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics 20 DC R verage Forward r Loss (W) 1126 118296300000°°°°° 111520KK8K/W/KW/W/WthSA=6K/W-DeltaR m Awe 8 RMS Limit 20K/W o Conduction Period muP 30K/W axi 4 12F(R) Series M TJ = 175°C 0 0 4 8 12 16 20 25 50 75 100 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 3 Document Number: 93487 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-12F(R) Series www.vishay.com Vishay Semiconductors ward Current (A) 222025050 ARta Atendy VR Ra Rt e M d ALpopaldie Cd oFno@@dllioI tn65iwoi00tnii naHH gAl zz TnS J 00d u=.. 00rW g011ei807t.h305 °ssC ward Current (A) 1010000 TJ = 25°C TJ = 175°C Wave For 115705 ous For 10 e e n n a Si 125 nt 12F(R) Series alf 12F(R) Series sta H n ak 100 1 10 100 I 10 1 2 3 4 5 6 e P Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics A) 275 W) 10 nt ( Maximum NoVne Rrseupse Ptiutilvsee STurargine DCuurrarteionnt. C/ Steady State Value urre 250 No VoInltiatigael TRJ e=a p1p75lie°Cd ce (° R(D t Ch J CO =p e2r.a0t iKon/W) d C 225 Rated VR R M Reapplied dan war 200 mpe r e Fo 175 mal I 1 alf Sine Wav 112550 12F(R) Series nsient Ther 12F(R) Series H a k 100 Tr 0.1 ea 0.01 0.1 1 -C 0.001 0.01 0.1 1 10 P J Pulse Train Duration (s) Zth Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance Z Characteristics thJC ORDERING INFORMATION TABLE Device code VS- 12 F R 120 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating: code = I F(AV) 3 - F = standard device 4 - None= stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = V (see Voltage Ratings table) RRM 6 - None= stud base DO-4 (DO-203AA) 10-32UNF-2A M = stud base DO-4 (DO-203AA) M5 x 0.8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 4 Document Number: 93487 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) 3.30 (0.13) 0.8 ± 0.1 4.00 (0.16) (0.03 ± 0.004) 2 + 0.3 0 (0.08 + 0 . 0 1 ) 0 5.50 (0.22) MIN. R 0.40 Ø 1.80 ± 0.20 R (0.02) (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. 10.20 (0.40) Ø 6.8 (0.27) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 30-Jun-08 1

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: VS-12FR10 VS-12F40 12F60M VS-12FR120 VS-12F10 VS-12F100 VS-12F120 VS-12F20 VS-12F60 VS-12F80 VS-12FR100 VS-12FR20 VS-12FR40 VS-12FR60 VS-12FR80 VS-12F120M