图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: VN751STR
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

VN751STR产品简介:

ICGOO电子元器件商城为您提供VN751STR由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 VN751STR价格参考。STMicroelectronicsVN751STR封装/规格:PMIC - 配电开关,负载驱动器, 。您可以下载VN751STR参考资料、Datasheet数据手册功能说明书,资料中有VN751STR 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC DRIVER HIGH SIDE 8-SOIC门驱动器 High Side Driver

产品分类

PMIC - MOSFET,电桥驱动器 - 内部开关集成电路 - IC

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

电源管理 IC,门驱动器,STMicroelectronics VN751STR-

数据手册

点击此处下载产品Datasheet

产品型号

VN751STR

产品

Half-Bridge Drivers

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=24708

产品目录页面

点击此处下载产品Datasheet

产品种类

门驱动器

供应商器件封装

8-SO

其它名称

497-8169-1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM142/CL1499/SC903/PF129623?referrer=70071840

包装

剪切带 (CT)

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

60 毫欧

封装

Reel

封装/外壳

8-SOIC(0.154",3.90mm 宽)

封装/箱体

SO-8

工作温度

-40°C ~ 125°C

工厂包装数量

2500

最大关闭延迟时间

35000 ns

最大工作温度

+ 150 C

最大开启延迟时间

12000 ns

最小工作温度

- 40 C

标准包装

1

激励器数量

1 Driver

电压-电源

5.5 V ~ 36 V

电流-峰值输出

6A

电流-输出/通道

2.5A

电源电压-最大

36 V

电源电压-最小

5.5 V

电源电流

1.8 mA

类型

Non-Inverting

系列

VN751S

输入类型

非反相

输出数

1

输出电流

2.5 A

输出端数量

1

配置

Non-Inverting

推荐商品

型号:MIC2014-0.8YM5

品牌:Microchip Technology

产品名称:集成电路(IC)

获取报价

型号:MAX4822ETP+T

品牌:Maxim Integrated

产品名称:集成电路(IC)

获取报价

型号:MIC2548-1BM

品牌:Microchip Technology

产品名称:集成电路(IC)

获取报价

型号:BTS133 E3045A

品牌:Infineon Technologies

产品名称:集成电路(IC)

获取报价

型号:AUIPS1052GTR

品牌:Infineon Technologies

产品名称:集成电路(IC)

获取报价

型号:AUIPS7125RTRL

品牌:Infineon Technologies

产品名称:集成电路(IC)

获取报价

型号:MIC2537-2YM

品牌:Microchip Technology

产品名称:集成电路(IC)

获取报价

型号:FPF1038UCX

品牌:ON Semiconductor

产品名称:集成电路(IC)

获取报价

样品试用

万种样品免费试用

去申请
VN751STR 相关产品

DRV103UG4

品牌:Texas Instruments

价格:

TPS2013ADRG4

品牌:Texas Instruments

价格:

ZXMS6003GTA

品牌:Diodes Incorporated

价格:

AP2552AW6-7

品牌:Diodes Incorporated

价格:

SI3861BDV-T1-E3

品牌:Vishay Siliconix

价格:

BTS3104SDLATMA1

品牌:Infineon Technologies

价格:

SI3865CDV-T1-GE3

品牌:Vishay Siliconix

价格:

LTC1470ES8#PBF

品牌:Linear Technology/Analog Devices

价格:

PDF Datasheet 数据手册内容提取

VN751S High-side driver Datasheet - production data Description The VN751S is a monolithic device developed using STMicroelectronics' VIPower technology, intended to drive any kind of load with one side connected to ground. Active V pin voltage CC clamp protects the device against low energy spikes. Active current limitation combined with (cid:52)(cid:48)(cid:14)(cid:25) thermal shutdown and automatic restart protect the device against overload. The device automatically turns off in case of ground pin Features disconnection. This device is especially suitable for industrial applications in conformity with IEC  R : 60 m 61131-2 programmable controller international DS(on) standard.  I : 2.5 A OUT  VCC: 36 V Table 1. Device summary  CMOS compatible input Order code Package Packing  Thermal shutdown VN751S Tube  Shorted load protection SO-8 VN751STR Tape and reel  Undervoltage and overvoltage shutdown  Protection against loss of ground  Very low standby current  Compliance to 61000-4-4 IEC test up to 4 kV  Open drain status output  Fast demagnetization of inductive loads May 2018 DocID12320 Rev 9 1/22 This is information on a product in full production. www.st.com

Contents VN751S Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Switching time waveforms and truth table . . . . . . . . . . . . . . . . . . . . . . 11 7 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 Active VDS clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10.2 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 DocID12320 Rev 9

VN751S List of tables List of tables Table 1. Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 4. Power section. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 5. Switching (V = 24 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CC Table 6. Input pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 7. Status pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 8. Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 9. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 10. SO-8 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 11. SO-8 tape and reel mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 12. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 DocID12320 Rev 9 3/22 22

List of figures VN751S List of figures Figure 1. Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Connection diagram (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. Peak short-circuit current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5. Avalanche energy test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 6. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 7. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 8. Application schematic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 9. Reverse polarity protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 10. Active clamp equivalent principle schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 11. Fast demagnetization waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 12. Typical demagnetization energy (single pulse) at V = 24 V and T = 125 °C . . . . . . 17 CC AMB Figure 13. SO-8 package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 14. SO-8 package recommended footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 15. SO-8 tape and reel dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4/22 DocID12320 Rev 9

VN751S Block diagram 1 Block diagram Figure 1. Block diagram (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:22)(cid:23) DocID12320 Rev 9 5/22 22

Pin connection VN751S 2 Pin connection Figure 2. Connection diagram (top view) (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:22)(cid:24) Figure 3. Current and voltage conventions (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:22)(cid:25) 6/22 DocID12320 Rev 9

VN751S Maximum ratings 3 Maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DC supply voltage 45 V CC -V Reverse DC supply voltage -0.3 V CC -I DC reverse ground pin current -200 mA GND I DC output current Internally limited A OUT -I Reverse DC output current -5 A OUT I DC input current -1 to +10 mA IN I DC status current -1 to +10 mA STAT V Electrostatic discharge (R = 1.5 k; C = 100 pF) 5000 V ESD Single pulse avalanche energy E 650 mJ AS (T = 125 °C, V = 24 V, I = 2.0 A) amb CC load P Power dissipation at T = 25 °C Internally limited W TOT C T Junction operating temperature Internally limited °C J T Case operating temperature -40 to 150 °C C T Storage temperature -55 to 150 °C STG Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max. 15 °C/W th(JC) 93(1) R Thermal resistance junction-ambient Max. °C/W th(JA) 82(2) 1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 m) thick connected to all VCC pins. Horizontal mounting and no artificial air flow. 2. When mounted on a standard single-sided FR-4 board with 2 cm2 of Cu (at least 35 m) thick connected to all VCC pins. Horizontal mounting and no artificial air flow. DocID12320 Rev 9 7/22 22

Electrical characteristics VN751S 4 Electrical characteristics 8 V < V < 36 V; -40 °C < T < 125 °C; unless otherwise specified. CC J Table 4. Power section Symbol Parameter Test conditions Min. Typ. Max. Unit V Supply voltage - 5.5 - 36 V CC I = 2 A at T = 25 °C - 60 - OUT J R On-state resistance m DS(on) I = 2 A - - 180 OUT Off-state, V = 24 V, T = 25 °C - 10 20 µA CC J I (1) Supply current On-state, V = 24 V, T = 25 °C - 3.5 - mA S CC J On-state, V = 24 V, T = 100 °C - - 3.8 mA CC J V Undervoltage shutdown - 3 4 5.5 V USD V Overvoltage shutdown - 36 - - V OV I Off-state output current V = V = 0 V 0 - 10 µA L(off) IN OUT 1. Status: floating. Table 5. Switching (V = 24 V) CC Symbol Parameter Test conditions Min. Typ. Max. Unit R = 12  from V rising edge t Turn-on delay time L IN - 12 - µs d(ON) to V = 2.4 V OUT Turn-off delay time R = 12  from V falling edge t L IN - 35 - µs d(OFF) of output current to V = 21.6 V OUT Turn -on voltage R = 12  from V = 2.4 V d /dt L OUT - 0.80 - VOUT (on) slope to V = 19.2 V OUT V/µs Turn -off voltage R = 12 from V = 21.6 V dV /dt L OUT - 0.30 - OUT (off) slope to V = 2.4 V OUT Table 6. Input pin Symbol Parameter Test conditions Min. Typ. Max. Unit V Input low level - - - 1.25 V IL I Low level input current V = 1.25 V 1 - - µA IL IN V Input high level - 3.25 - - V IH I High level input current V = 3.25 V - - 10 µA IH IN V Input hysteresis voltage - 0.5 - V hyst I Input current V = V = 5 V - - 10 µA IN IN CC I = 1 mA 6 6.8 8 IN V Input clamp voltage V ICL I = -1 mA - -0.7 - IN 8/22 DocID12320 Rev 9

VN751S Electrical characteristics Table 7. Status pin Symbol Parameter Test conditions Min. Typ. Max. Unit V Status low output voltage I = 1.6 mA - - 0.5 V STAT STAT I Status leakage current Normal operation; V = 5 V - - 10 µA LSTAT STAT C Status pin input capacitance Normal operation; V = 5 V - - 100 V STAT STAT I High level input current V = 3.25 V - - 10 µA IH IN I = 1 mA 6 6.8 8 STAT V Status clamp voltage V SCL I = -1 mA - -0.7 - STAT Table 8. Protection Symbol Parameter Test conditions Min. Typ. Max. Unit Turn-off output clamp V R =12 ; L = 6 mH V -47 V -52 V -57 V demag voltage L CC CC CC T Shutdown temperature - 150 175 200 °C TSD V = 24 V; R = 10 m, I Current limitation CC LOAD 2.7 - 6.0 A lim t = 0.4 ms T Thermal hysteresis - 7 20 - °C hyst T Reset temperature - 135 - - °C R DocID12320 Rev 9 9/22 22

Test circuits VN751S 5 Test circuits Figure 4. Peak short-circuit current Figure 5. Avalanche energy test circuit 10/22 DocID12320 Rev 9

VN751S Switching time waveforms and truth table 6 Switching time waveforms and truth table Figure 6. Switching time waveforms (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:22)(cid:26) Table 9. Truth table Conditions Input Output Status L L H Normal operation H H H L L H Current limitation H X (T < T ) H J TSD H X (T > T ) L J TSD L L H Overtemperature H L L L L X Undervoltage H L X L L H Overvoltage H L H DocID12320 Rev 9 11/22 22

Switching time waveforms and truth table VN751S Figure 7. Waveforms (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:23)(cid:17) 12/22 DocID12320 Rev 9

VN751S Application schematic 7 Application schematic Figure 8. Application schematic DocID12320 Rev 9 13/22 22

Reverse polarity protection VN751S 8 Reverse polarity protection A schematic solution to protect the IC against a reverse polarity condition is proposed. This schematic is effective with any type of load connected to the outputs of the IC. The R resistor value can be selected according to the following conditions: GND Equation 1 R  600 mV / (I in ON-state max.) GND S Equation 2 R  (-V ) / (-I ) GND CC GND where -I is the DC reverse ground pin current and can be found in Section3: Maximum GND ratings on page7. The power dissipation associated to R during reverse polarity condition is: GND Equation 3 P = (-V )2 / R D CC GND This resistor can be shared by several different ICs. In such case I value in Equation 1 is the sum of the maximum ON-state currents of the S different devices. Please note that if the microprocessor ground and the device ground are separated, the voltage drop across the R (given by I in ON-state max. * R ) GND S GND produces a difference between the generated input level and the IC input signal level. This voltage drop varies depending on how many devices are ON in case of several high-side switches sharing the same R . GND Figure 9. Reverse polarity protection (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:23)(cid:18) 14/22 DocID12320 Rev 9

VN751S Active VDS clamp 9 Active VDS clamp The active clamp is also known as the fast demagnetization of inductive loads or fast current decay. When a high-side driver turns off an inductance, an undervoltage is detected on the output. The OUT pin is pulled down to V . The conduction state is modulated by internal demag circuitry in order to keep the OUT pin voltage at about V until the load energy has been demag dissipated. The energy is dissipated both in the IC internal switch and in load resistance. Figure 10. Active clamp equivalent principle schematic (cid:34)(cid:49)(cid:49)(cid:45)(cid:42)(cid:36)(cid:34)(cid:53)(cid:42)(cid:48)(cid:47)(cid:1)(cid:35)(cid:1)(cid:48)(cid:34)(cid:51)(cid:37) (cid:52)(cid:54)(cid:49)(cid:49)(cid:45)(cid:58)(cid:1)(cid:51)(cid:1)(cid:34)(cid:42)(cid:45) (cid:55)(cid:36)(cid:36) (cid:36)(cid:45)(cid:34)(cid:46)(cid:49) (cid:68)(cid:74)(cid:83)(cid:68)(cid:86)(cid:74)(cid:85)(cid:83)(cid:90) (cid:48)(cid:54)(cid:53) (cid:55)(cid:47)(cid:24)(cid:22)(cid:18)(cid:49)(cid:53) (cid:40)(cid:47)(cid:37) (cid:40)(cid:51)(cid:48)(cid:54)(cid:47)(cid:37)(cid:1)(cid:49)(cid:1)(cid:45)(cid:34)(cid:47)(cid:38) (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:23)(cid:20) DocID12320 Rev 9 15/22 22

Active VDS clamp VN751S Figure 11. Fast demagnetization waveforms (cid:42) (cid:48)(cid:54)(cid:53) (cid:85)(cid:48)(cid:47) (cid:85)(cid:37)(cid:38)(cid:46)(cid:34)(cid:40) (cid:42) (cid:45)(cid:48)(cid:34)(cid:37) (cid:95) (cid:55) (cid:85) (cid:48)(cid:54)(cid:53) (cid:55) (cid:95) (cid:36)(cid:36) (cid:85) (cid:55) (cid:14)(cid:55) (cid:36)(cid:36) (cid:37)(cid:38)(cid:46)(cid:34)(cid:40) (cid:55) (cid:42)(cid:47) (cid:95) (cid:85) (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:23)(cid:21) The demagnetization of the inductive load causes a huge electrical and thermal stress to the IC. The curve plotted in Figure12 shows the maximum demagnetization energy that the IC can support in a single demagnetization pulse with V = 24 V and T = 125 °C. If higher CC AMB demagnetization energy is required then an external free-wheeling Schottky diode has to be connected between OUT (cathode) and GND (anode) pins. Note that in this case the fast demagnetization is inhibited. 16/22 DocID12320 Rev 9

VN751S Active VDS clamp Figure 12. Typical demagnetization energy (single pulse) at V = 24 V and T = 125 °C CC AMB (cid:23)(cid:17)(cid:17)(cid:17) (cid:22)(cid:17)(cid:17)(cid:17) (cid:21)(cid:17)(cid:17)(cid:17) (cid:20)(cid:17)(cid:17)(cid:17) (cid:19)(cid:17)(cid:17)(cid:17) (cid:18)(cid:17)(cid:17)(cid:17) (cid:17) (cid:17)(cid:15)(cid:22) (cid:17)(cid:15)(cid:24) (cid:17)(cid:15)(cid:26) (cid:18)(cid:15)(cid:18) (cid:18)(cid:15)(cid:20) (cid:18)(cid:15)(cid:22) (cid:18)(cid:15)(cid:24) (cid:18)(cid:15)(cid:26) (cid:19)(cid:15)(cid:18) (cid:19)(cid:15)(cid:20) (cid:19)(cid:15)(cid:22) (cid:42) (cid:60)(cid:34)(cid:62) (cid:45)(cid:48)(cid:34)(cid:37) (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:23)(cid:22) DocID12320 Rev 9 17/22 22

Package information VN751S 10 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10.1 SO-8 package information Figure 13. SO-8 package outline 18/22 DocID12320 Rev 9

VN751S Package information Table 10. SO-8 package mechanical data Dimensions (mm) Symbol Min. Typ. Max. A - - 1.75 A1 0.10 - 0.25 A2 1.25 - - b 0.28 - 0.48 c 0.17 - 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e - 1.27 - h 0.25 - 0.50 L 0.40 - 1.27 L1 - 1.04 - k 0° - 8° ccc - - 0.10 Figure 14. SO-8 package recommended footprint (cid:34)(cid:46)(cid:17)(cid:21)(cid:17)(cid:20)(cid:23)(cid:19) DocID12320 Rev 9 19/22 22

Package information VN751S 10.2 SO-8 packing information Figure 15. SO-8 tape and reel dimensions Table 11. SO-8 tape and reel mechanical data Dimensions (mm) Symbol Min. Typ. Max. A - 330 C 12.8 13.2 D 20.2 - N 60 - T - 22.4 - Ao 8.1 8.5 Bo 5.5 5.9 Ko 2.1 2.3 Po 3.9 4.1 P 7.9 8.1 20/22 DocID12320 Rev 9

VN751S Revision history 11 Revision history Table 12. Document revision history Date Revision Changes 18-Sep-2006 1 Initial release. 12-Mar-2007 2 Document reformatted, typo in table 3, updated P value in table 2. tot 15-Mar-2007 3 Typo in table 1 V . ESD 18-Sep-2007 4 Added I value in table 1. STAT 11-Oct-2007 5 Updated table 2. 08-Jul-2008 6 Added section 7. 30-Nov-2009 7 Updated cover page and section 6. 12-Jul-2016 8 Updated Table 4: “Power section”. Updated Section: Features on page1 (added “Fast demagnetization of inductive loads”). Updated Table2 on page7 (Updated E parameter and value). AS 09-May-2018 9 Updated Figure8 on page13 [removed “Nominal 2A LOAD and 270mH (SO8) 400mH (PPAK)”]. Added Section9 on page 15. Minor modifications throughout document. DocID12320 Rev 9 21/22 22

VN751S IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved 22/22 DocID12320 Rev 9