VT3045C, VIT3045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.30 V at I = 5.0 A F F FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 3 2 2 TYPICAL APPLICATIONS 1 1 For use in high frequency DC/DC converters, switching VT3045C VIT3045C power supplies, freewheeling diodes, OR-ing diode, and PIN 1 PIN 2 PIN 1 PIN 2 reverse battery protection. PIN 3 CASE PIN 3 K MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating I 2 x 15 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 45 V RRM commercial grade I 200 A FSM Terminals: matte tin plated leads, solderable per VF at IF = 15 A 0.39 V J-STD-002 and JESD 22-B102 T max. 150 °C M3 suffix meets JESD 201 class 1A whisker test J Package TO-220AB, TO-262AA Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum  MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL VT3045C VIT3045C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 30 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave I 200 A superimposed on rated load per diode FSM Operating junction and storage temperature range T , T -40 to +150 °C J STG Revision: 09-Nov-17 1 Document Number: 89350 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VT3045C, VIT3045C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.42 - F I = 7.5 A T = 25 °C 0.44 - F A I = 15 A 0.49 0.57 F Instantaneous forward voltage per diode V (1) V F I = 5.0 A 0.30 - F I = 7.5 A T = 125 °C 0.33 - F A I = 15 A 0.39 0.48 F T = 25 °C - 2000 μA A Reverse current per diode V = 45 V I (2) R R T = 125 °C 17 50 mA A Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL VT3045C VIT3045C UNIT per diode 1.6 Typical thermal resistance R °C/W JC per device 0.85 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3045C-M3/4W 1.89 4W 50/tube Tube TO-262AA VIT3045C-M3/4W 1.46 4W 50/tube Tube Revision: 09-Nov-17 2 Document Number: 89350 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VT3045C, VIT3045C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 35 100 ed Current (A) 3205 Current (mA) 10 TTTAAA === 111502005 °°°CCC ectifi 20 erse 1 R v d 15 Re war us 0.1 For 10 neo TA = 25 °C ge nta 0.01 era 5 sta v n A I 0 0.001 100 110 120 130 140 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 9 100 000 8 D = 0.5 D = 0.8 Tf =J =1 .205 M °CHz W) 7 D = 0.3 )Fp Vsig = 50 mVp-p ss ( 6 D = 0.2 ( ec 10 000 o n L a Power 45 D = 0.1 D = 1.0 ticapaC Average 32 T noitcnuJ 1000 1 D = tp/T tp 0 100 0 2 4 6 8 10 12 14 16 18 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 urrent (A) TA = 150 °C nce (°C/W) Junction to Case C 10 a ard TA = 100 °C ped w T = 125 °C m For A al I 1 s m stantaneou 1 TA = 25 °C nsient Ther n a I Tr 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 09-Nov-17 3 Document Number: 89350 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VT3045C, VIT3045C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.161 (4.08) 0.185 (4.70) 0.139 (3.53) 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.635 (16.13) 0.603 (15.32) 0.625 (15.87) 0.573 (14.55) PIN 0.350 (8.89) 1 2 3 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.014 (0.36) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.185 (4.70) 0.380 (9.65) 0.055 (1.40) 0.175 (4.44) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.401 (10.19) 0.950 (24.13) 0.330 (8.38) 0.381 (9.68) 0.920 (23.37) PIN 0.510 (12.95) 1 2 3 0.470 (11.94) 0.160 (4.06) 0.110 (2.79) 0.140 (3.56) 0.100 (2.54) 0.057 (1.45) 0.560 (14.22) 0.045 (1.14) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.014 (0.35) 0.195 (4.95) Revision: 09-Nov-17 4 Document Number: 89350 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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