US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultra Fast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Ultrafast reverse recovery time Available • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS I 1.0 A F(AV) For use in high frequency rectification and freewheeling 50 V, 100 V, 200 V, 400 V, 600 V, V application in switching mode converters and inverters for RRM 800 V, 1000 V consumer, computer, automotive, and telecommunication. I 30 A FSM trr 50 ns, 75 ns MECHANICAL DATA VF at IF 1.0 V, 1.7 V Case: SMA (DO-214AC) TJ max. 150 °C Molding compound meets UL 94 V-0 flammability rating Package SMA (DO-214AC) Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial Diode variations Single grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Device marking code UA UB UD UG UJ UK UM Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current at T = 110 °C I 1.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 30 A superimposed on rated load FSM Operating and storage temperature range T , T -55 to +150 °C J STG Revision: 21-Jul-17 1 Document Number: 88768 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Maximum instantaneous forward voltage 1.0 A V (1) 1.0 1.7 V F Maximum DC reverse current TA = 25 °C 10 I μA at rated DC blocking voltage T = 100 °C R 50 A I = 0.5 A, I = 1.0 A, Maximum reverse recovery time F R t 50 75 ns I = 0.25 A rr rr Typical junction capacitance 4.0 V, 1 MHz C 15 10 pF J Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT RθJA (1) 75 Maximum thermal resistance °C/W RθJL (1) 27 Note (1) PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE US1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel US1JHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel US1J-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel US1J-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel US1JHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel US1JHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 21-Jul-17 2 Document Number: 88768 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 1.2 100 nt (A) 1.0 Resistive or Inductive Load ge TJ = 150 °C e a ward Rectified Curr 000...864 eous Reverse LeakCurrent (µA) 101 TJ = 125 °CTJ = 100 °C erage For 0.2 0.2" xC 0o.2p"p (e5r. 0P amdm A rxe 5a.s0 mm) Instantan 0.1 US1A thru US1G TJ = 25 °C v A 0 0.01 0 25 50 75 100 125 150 0 20 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 30 100 )A( tnerruC 2205 8T.L3 = m 1s1 0S i°nCgle Half Sine-Wave d Current (A) 10 TJ= 10T0J°=C 125°CTJ= 150°C egruS drawroF kaeP 11550 stantaneous Forwar 0.11 TJ= -40°TCJ= 25US°C1J thru US1M n 0 I 0.01 1 10 100 0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7 Number of Cycles at 60 Hz Instantaneous Forward Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Instantaneous Forward Characteristics 100 1000 A) nt ( ge TJ = 150 °C Curre 10 TJ= 150°C Leaka 100 TJ = 125 °C antaneous Forward 0.11 TJ= 125°C TJ=T 2J5= °1C00°C nstantaneous Reverse Current (µA) 01.011 US1J thru US1M TJ = 10T0J =°C 25 °C nst TJ= -40°C US1A thru US1G I I 0.01 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics Revision: 21-Jul-17 3 Document Number: 88768 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor 100 100 TJ = 25 °C )W )Fp US1A thru US1G fV =si g1 =.0 5 M0 HmzVp-p /C°( e ( ecn cnad 10 a e ticapa 10 US1J thru US1M pmI la C m noitcnuJ rehT tneis 1 n a rT 1 0.1 0.1 1 10 100 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 7 - Typical Junction Capacitance Fig. 8 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.074 (1.88) MIN. MAX. 0.065 (1.65) 0.110 (2.79) 0.049 (1.25) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.060 (1.52) 0.012 (0.305) MIN. 0.006 (0.152) 0.208 (5.28) 0.090 (2.29) REF. 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Jul-17 4 Document Number: 88768 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: US1B/1T US1B-E3/1T US1G/1T US1G-E3/1T US1J/1T US1J-E3/1T US1M/1T US1M-E3/1T US1A/11T US1A/13T US1A/5AT US1A/61T US1A/63T US1A-E3/2GT US1A-E3/5AT US1A-E3/61T US1A-E3/63T US1AHE3/2GT US1AHE3/5AT US1AHE3/61T US1AHE3/63T US1B/11T US1B/2FT US1B/2GT US1B/51T US1B/5AT US1B/61T US1B/63T US1B-E3/2GT US1B-E3/51T US1B-E3/5AT US1B-E3/61T US1B-E3/63T US1BHE3/2GT US1BHE3/5AT US1BHE3/61T US1BHE3/63T US1D/11T US1D/13T US1D/2FT US1D/2GT US1D/5AT US1D/61T US1D/63T US1D-E3/11T US1D-E3/2GT US1D-E3/5AT US1D-E3/61T US1D-E3/63T US1DHE3/2GT US1DHE3/5AT US1DHE3/61T US1DHE3/63T US1G/11T US1G/13T US1G/2FT US1G/2GT US1G/51T US1G/5AT US1G/61T US1G/63T US1G-E3/11T US1G-E3/2GT US1G-E3/51T US1G-E3/5AT US1G- E3/61T US1G-E3/63T US1GHE3/2GT US1GHE3/5AT US1GHE3/61T US1GHE3/63T US1J/11T US1J/13T US1J/2FT US1J/2GT US1J/51T US1J/5AT US1J/61T US1J/63T US1J-E3/11T US1J-E3/2GT US1J-E3/51T US1J-E3/5AT US1J-E3/61T US1J-E3/63T US1JHE3/2GT US1JHE3/5AT US1JHE3/61T US1JHE3/63T US1K/11T US1K/51T US1K/5AT US1K/61T US1K-E3/5AT US1K-E3/61T US1KHE3/5AT US1KHE3/61T US1M/11T US1M/13T US1M/2FT