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  • 型号: UPS5819E3TR7
  • 制造商: American Microsemiconductor, Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

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UPS5819E3TR7产品简介:

ICGOO电子元器件商城为您提供UPS5819E3TR7由American Microsemiconductor, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 UPS5819E3TR7价格参考。American Microsemiconductor, Inc.UPS5819E3TR7封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 40V 1A Powermite 1(DO216-AA)。您可以下载UPS5819E3TR7参考资料、Datasheet数据手册功能说明书,资料中有UPS5819E3TR7 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 40V 1A POWERMITE1

产品分类

单二极管/整流器

品牌

Microsemi Commercial Components Group

数据手册

http://www.microsemi.com/document-portal/doc_download/131649-rf01129

产品图片

产品型号

UPS5819E3TR7

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

550mV @ 1A

不同 Vr、F时的电容

60pF @ 5V,1MHz

不同 Vr时的电流-反向漏电流

1mA @ 40V

二极管类型

肖特基

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

Powermite 1(DO216-AA)

其它名称

UPS5819E3
UPS5819E3-ND
UPS5819E3/TR7
UPS5819E3/TR7-ND
UPS5819E3TR
UPS5819E3TR-ND
UPS5819E3TR7TR

包装

带卷 (TR)

反向恢复时间(trr)

-

安装类型

表面贴装

封装/外壳

DO-216AA

工作温度-结

-55°C ~ 150°C

标准包装

3,000

热阻

15°C/W Jc

电压-DC反向(Vr)(最大值)

40V

电流-平均整流(Io)

1A

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

UPS5817(e3) and UPS5819(e3) Schottky Barrier Rectifier Compliant 1.0 Amp, 20 and 40 Volt DESCRIPTION Single schottky rectifier assembled in Powermite 1 package which features a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly. The package also incorporates a unique locking tab which acts as an efficient heat path from the die to the mounting plane for external heat sinking with very low thermal resistance junction to case (bottom). This product is suitable for use in switching and regulating power supplies and also charge pump circuits. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Ultra low forward voltage drop. Powermite 1 • Efficient heat path with integral locking bottom metal tab. • Supplied in 8mm tape and reel. (DO-216AA) • RoHS compliant. Package APPLICATIONS / BENEFITS • High power surface mount package. • Guard ring construction for transient protection. • Compatible with Automatic Insertion Equipment. • Full-metallic bottom eliminates flux entrapment. • High surge capacity. • Ideal for OR’ing diode. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Value Parameters/Test Conditions Symbol Unit UPS5817 UPS5819 Peak Repetitive Reverse Voltage and also VRRM 20 40 V Working Peak Reverse Voltage VRWM MSC – Lawrence DC Blocking Voltage VR 6 Lake Street, RMS Reverse Voltage VR(RMS) 14 28 V Lawrence, MA 01841 Junction and Storage Temperature TJ and TSTG -55 to +150 ºC Tel: 1-800-446-1158 or Thermal Resistance Junction-to-Case RӨJC 15 ºC/W (978) 620-2600 Thermal Resistance Junction-to-Ambient (1) RӨJA 240 ºC/W F ax: (978) 689-0803 Average Rectified Output Current @ TC = 135 ºC IO 1.0 A MSC – Ireland Repetitive Peak Forward Current IFRM 2.0 A Gort Road Business Park, Surge Peak Forward Current IFSM 50 A Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Voltage Rate of Change @ Rated VR and TJ = 25 ºC dv/dt 10,000 V/µs Fax: +353 (0) 65 6822298 Solder Temperature @ 10 s TSP 260 oC Website: Notes: 1. Mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print. www.microsemi.com RF01129, Rev. A (5/8/13) ©2013 Microsemi Corporation Page 1 of 4

UPS5817(e3) and UPS5819(e3) MECHANICAL and PACKAGING • CASE: Molded epoxy package meets UL94V-0. • TERMINALS: Copper with annealed matte-tin plating for RoHS compliance. Solderable per MIL-STD-750 method 2026. (Consult factory for tin-lead plating). • MARKING: Body marked with “S17” or “S19”. • POLARITY: Cathode designated by Tab 1 (bottom). • TAPE & REEL option: Packaging per EIA-481-B with 8 mm tape. Consult factory for quantities. • WEIGHT: Approximately 0.016 grams. • See Package Dimensions on last page. PART NOMENCLATURE UPS 5817 e3 Powermite Schottky RoHS Compliance e3 = RoHS compliant Series Number Blank = non-RoHS compliant ELECTRICAL CHARACTERISTICS VALUE RATING (Conditions) SYMBOL UNIT UPS5817 UPS5819 Maximum Instantaneous Forward Voltage (2) (IF = 1.0 A, TJ = +25 ºC) VF 0.45 0.55 Volts Maximum Instantaneous Reverse Current (2) (VR = 20 V, TJ = +25 ºC) IRM 1.0 1.0 mA Typical Junction Capacitance (VR = 5V, f = 1 MHz) CJ 105 60 pF Notes: 2. Measured with a test pulse of 380 µs to minimize self-heating effect. RF01129, Rev. A (5/8/13) ©2013 Microsemi Corporation Page 2 of 4

UPS5817(e3) and UPS5819(e3) GRAPHS ) ed z ali m r o N ( e c n a st si e R al Duty Factor m r e h T nt Percent Values are e Duty Cycle = 100 x t1/t2 si n a r T T), t, Pulse Width Time (s) R( FIGURE 1 Thermal Impedance Junction to Case ) d e aliz m r o N ( e c n a st si e R al Duty Factor m r e h T nt Percent Values are e si Duty Cycle = 100 x t1/t2 n a r T T), t, Pulse Width Time (s) R( FIGURE 2 Thermal Impedance Junction to Ambient RF01129, Rev. A (5/8/13) ©2013 Microsemi Corporation Page 3 of 4

UPS5817(e3) and UPS5819(e3) PACKAGE DIMENSIONS Dimensions Ltr Inch Millimeters Min Max Min Max A 0.029 0.039 0.73 0.99 B 0.016 0.026 0.40 0.66 C 0.070 0.080 1.77 2.03 D 0.087 0.097 2.21 2.46 E 0.020 0.030 0.50 0.76 F 0.051 0.061 1.29 1.54 G 0.021 0.031 0.53 0.78 H 0.004 0.008 0.10 0.20 J 0.070 0.080 1.77 2.03 K 0.035 0.045 0.89 1.14 PAD LAYOUT Dimensions Ltr Inch Millimeters A 0.100 2.54 B 0.105 2.67 C 0.050 1.27 D 0.030 0.76 E 0.025 0.64 SCHEMATIC RF01129, Rev. A (5/8/13) ©2013 Microsemi Corporation Page 4 of 4