A Business Partner of Renesas Electronics Corporation. Preliminary μ Data Sheet PG2214TB R09DS0050EJ0400 Rev.4.00 GaAs Integrated Circuit for L, S-Band SPDT Switch Sep 10, 2012 2 T DESCRIPTION M The μPG2214TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V.U This device can opera9te frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-dens7ity surface mounting. FEATURES 1 • Switch control voltage : Vcont (H) = 1.8 to 5.3 V (3.0 V TYPO.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) 2 • Low insertion loss : Lins1 = 0.25 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V G : Lins2 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins3 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V C : Lins4 = 0.35 dB TYP. @- f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins5 = 0.35 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V • High isolation : ISL1 = 32 dB TYEP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : : ISL2 = 28 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V t : ISL3 = 27 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V n : ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL5 =S 24 dB TYP. @ f = 2.5 teo 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V • Handling power : Pin (1 dB) = +27.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (1 dB) = +20.0 dBm TYP.m @ f = 0.5 to 3.0 GHz, Vcont (H) = 1.8 V, Vcont (L) = 0 V • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) e APPLICATIONS A • L, S-band digital cellular or cordless telephone c • W-LAN, WLL and BluetoothTM etc. a <R> ORDERING INFORMATION l H p Part Number Package Marking Supplying Form e μPG2214TB-E4 6-pin super minimold (2012) G4J • Embossed tape 8 mm wide R • Pin 4, 5, 6 face the perforation side of the tape (Pb-Free) P • Qty 3 kpcs/reel n Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μPG2214TB -A I - Caution Observe pprecautions when handling because these devices are sensitive to electrostatic discharge. o r D The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0050EJ0400 Rev.4.00 Page 1 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View) (Bottom View) Pin No. Pin Name 1 OUTPUT1 2 1 6 1 6 6 1 G T2 GND M 3 OUTPUT2 2 4 5 2 5 5 2 J 4 Vcont2 3 4 3 4 4 U3 5 9INPUT 6 7 Vcont1 1 TRUTH TABLE O 2 Vcont1 Vcont2 INPUT−OUTPUT1 INPUT−OUTPUT2 Low High ON OFF G High Low OFF ON C - ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) E : Parameter Symbol Ratings tUnit Switch Control Voltage Vcont +6.0 Note n V Input Power Pin S +30 e dBm Operating Ambient Temperature TA −45 to +8m5 °C Storage Temperature Tstg −55 to +150 °C e Note (cid:31)Vcont1− Vcont2(cid:31)≤ 6.0 V A c RECOMMENDED OPERATING RANGE (TaA = +25°C, unless otherwise specified) ParameteHr Symbol lMIN. TYP. MAX. Unit p Switch Control Voltage (H) Vcont (H) 1.8 3.0 5.3 V Switch Control Voltage (L) Vcoent (L) −0.2 0 0.2 V R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 2 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 1 Lins1 f = 0.05 to 0.5 GHz Note 1 − 0.25 0.45 d2B T Insertion Loss 2 Lins2 f = 0.5 to 1.0 GHz − 0.25 0.45 dB M Insertion Loss 3 Lins3 f = 1.0 to 2.0 GHz − 0.30 0.50 dB Insertion Loss 4 Lins4 f = 2.0 to 2.5 GHz − 0.35 0.55 dB U 9 Insertion Loss 5 Lins5 f = 2.5 to 3.0 GHz − 0.35 0.60 dB 7 Isolation 1 ISL1 f = 0.05 to 0.5 GHz Note 1 29 32 − dB Isolation 2 ISL2 f = 0.5 to 1.0 GHz 25 218 − dB Isolation 3 ISL3 f = 1.0 to 2.0 GHz O 24 27 − dB 2 Isolation 4 ISL4 f = 2.0 to 2.5 GHz 23 26 − dB Isolation 5 ISL5 f = 2.5 to 3.0 GHz 21G 24 − dB Input Return Loss 1 RLin1 f = 0.05 to 0.5 GHz Note 1 15 20 − dB C - Input Return Loss 2 RLin2 f = 0.5 to 3.0 GHz 15 20 − dB Output Return Loss 1 RLout1 f = 0.05E to 0.5 GHz Note 1 15 20 − dB : Output Return Loss 2 RLout2 f = 0.5 to 3.0 GHz t 15 20 − dB 0.1 dB Loss Compression Pin (0.1 dB) f = 2.0/2.5 GHz n +21.0 +23.0 − dBm Input Power Note 2 f = 0.5 to 3.0 GHz − +23.0 − dBm S e 1 dB Loss Compression Pin (1 dB) f = 0.5 to 3.0 GHz − +27.0 − dBm Input Power Note 3 m 2nd Harmonics 2f0 f = 2.0 GHz, Pin = +15 dBm − −55 −47 dBc e A f = 2.5 GHz, Pin = +15 dBm − −55 −47 dBc 3rd Harmonics 3f0 f = 2.0 GcHz, Pin = +15 dBm − −55 −47 dBc f = 2a.5 GHz, Pin = +15 dBm − −55 −47 dBc Intermodulation Intercept Point IIP3 lf = 0.5 to 3.0 GHz, 2 tone, − +58 − dBm H pPin = +16 dBm, 5 MHz spicing Switch Control Current Icont − 4 20 μA e Switch Control Speed tSW 50% CTL to 90/10% RF − 20 200 ns R P Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. Pin (0.1 dB) is measunred the input power level when the insertion loss increases more 0.1 dB than that of linear range. I 3. Pin (1 dB) is m-easured the input power level when the insertion loss increases more 1 dB than that of linear range. p o r D R09DS0050EJ0400 Rev.4.00 Page 3 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss 6 Lins6 f = 0.05 to 0.5 GHz Note 1 − 0.25 0.50 d2B T Insertion Loss 7 Lins7 f = 0.5 to 1.0 GHz − 0.25 0.50 dB M Insertion Loss 8 Lins8 f = 1.0 to 2.0 GHz − 0.30 0.55 dB Insertion Loss 9 Lins9 f = 2.0 to 2.5 GHz − 0.35 0.60 dB U 9 Insertion Loss 10 Lins10 f = 2.5 to 3.0 GHz − 0.35 0.65 dB 7 Isolation 6 ISL6 f = 0.05 to 0.5 GHz Note 1 27 30 − dB Isolation 7 ISL7 f = 0.5 to 2.0 GHz 23 217 − dB Isolation 8 ISL8 f = 2.0 to 2.5 GHz O 21 25 − dB 2 Isolation 9 ISL9 f = 2.5 to 3.0 GHz 20 24 − dB Input Return Loss 3 RLin3 f = 0.05 to 3.0 GHz Note 1 15G 20 − dB Output Return Loss 3 RLout3 f = 0.05 to 3.0 GHz Note 1 15 20 − dB C - 0.1 dB Loss Compression Pin (0.1 dB) f = 2.0/2.5 GHz +14.0 +17.0 − dBm Input Power Note 2 f = 0.5 to 3.0 GHz − +17.0 − dBm E : 1 dB Loss Compression Pin (1 dB) f = 0.5 to 3.0 GHz t − +20.0 − dBm Input Power Note 3 n Switch Control Current Icont − 4 20 μA S e Switch Control Speed tSW 50% CTL to 90/10% RF − 20 200 ns m Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear e A range. c 3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. a l H Caution This device is used it is necespsary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, e bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut Rcapacitor value is less than 100 pF. P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 4 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB EVALUATION CIRCUIT OUTPUT2 OUTPUT1 2 T C0 C0 Note M U 9 3 2 1 7 1 O 2 G 4 5 6 C - E : t C0 1 000 pF n 1 000 pF S e Vcont2 INPUmT Vcont1 Note C0 : 0.05 to 0.5 GHz 1 000 pF e : 0.5 to 3.0 GHz 100A pF c The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. a l H p e R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 5 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB <R> ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont2 6pin SMM SPDT SW 2 T M Vc2 U 9 OUTPUT2 7 OUT 2 1 O C4 C2 2 C2 C1 G J INPUT C3 G4 C C1 - C1 IN E C1 C5 C2 : t n OUT 1 S e OUTPUT1 m Vc1 e A c a HVcont1 l p USING THE NEC EVALUATION BOARD e Symbol Values R P C1, C2, C3 100 pF n C4, C5 1 000 pF I - p o r D R09DS0050EJ0400 Rev.4.00 Page 6 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) INPUT-OUTPUT1 INPUT-OUTPUT2 INSERTION LOSS vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 2 5 5 T 1: –0.533 dB 1: –0.533 dB 4 1.0 GHz 4 1.M0 GHz 2: –0.674 dB 2: –0.688 dB B) 3 3: –01.8.53 0G dHBz B) 3 3: –01.8.56 0G dHBz oss L (dins 210 1 45:: ––01223..91...05034 92GGG ddHHHBBzzz oss L (dins 210 1U 7945:: ––01223..91...05045 92GGG ddHHHBBzzz L L on –1 on –1 erti –2 2 3 4 5 erti –2 2 314 5 s s n n O I –3 I –3 2 –4 –4 –5 –5 G 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency f (GHz) CFrequency f (GHz) - Remark The graphs indicate nominal characteristics. E : Caution These characteristics values include the losses of the NtEC evaluation board. n S e m e A c a l H p e R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 7 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB INPUT-OUTPUT1 INPUT-OUTPUT2 <R> ISOLATION vs. FREQUENCY ISOLATION vs. FREQUENCY 50 50 1: –28.87 dB 1: –29.12 dB 40 1.0 GHz 40 1.0 GHz 2: –27.81 dB 2: –27.81 dB 30 3: –217..55 4G dHBz 30 3: –217..55 4G dHBz2 B) 20 2.0 GHz B) 20 T 2.0 GHz d 4: –26.74 dB d 4: –26.56 dB L ( 10 2.5 GHz L ( 10 2.M5 GHz S 5: –25.04 dB S 5: –24.88 dB n I 0 3.0 GHz n I 0 3.0 GHz o o ati–10 ati–10 U 9 Isol–20 1 2 33 4 5 Isol–20 1 2 33 4 5 7 –30 –30 –40 –40 1 –50 –50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 O0.5 1.0 1.5 2.0 2.5 33..00 3.5 2 Frequency f (GHz) Frequency f (GHz) G INPUT-OUTPUT1 INPUT-OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY C - 50 50 1: –28.279 dB 1: –29.277 dB 40 1.0 GHz 40 1.0 GHz 2: –22.334 dB 2: –22.261 dB RL (dB)in 3200 34:: ––119912..38..5044 13GG ddHHBBzz E RL (dB)in 3200 t: 34:: ––119912..04..5026 18GG ddHHBBzz ss 10 5: –242.3.55 5G dHBz ss 1n0 5: –242.9.51 4G dHBz Lo 0 3.0 GHz Lo 0 3.0 GHz n S n e ur–10 ur–10 et et R mR Input ––3200 1 2 3 4 5 Input ––3200 1 2 3 4 5 –40 e –40 A –50 –50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 c 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency f (GHz) a Frequency f (GHz) INPUT-OUTPUT1 l INPUT-OUTPUT2 H p OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 50 50 e1: –30.808 dB 1: –29.853 dB 40 1.0 GHz 40 1.0 GHz B) 2: –22.826 dB B) 2: –22.191 dB (dLout 3200 P R3: –1912.5..509 6GG dHHBzz (dLout 3200 3: –1812.8..506 3GG dHHBzz R 4: –19.41 dB R 4: –18.563 dB s 10 n 2.5 GHz s 10 2.5 GHz s 5: –22.554 dB s 5: –23.874 dB Lo 0 3.0 GHz Lo 0 3.0 GHz eturn –10 -I eturn –10 R R ut –20 1 p ut –20 1 p 3 4 p 3 4 ut–30 2 5 ut–30 2 5 O O o –40 –40 –50 –50 0.5 1r.0 1.5 2.0 2.5 3.0 3.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 D Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0050EJ0400 Rev.4.00 Page 8 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB OUTPUT POWER vs. INPUT POWER 30 f = 2 GHz m) 25 B d 2 P (out 20 T er M w o P 15 ut p U 9 ut O 10 7 5 10 12 14 16 18 20 22 24 26 28 30 1 O Input Power Pin (dBm) 2 Remark The graph indicate nominal characteristics. G C - E : t n S e m e A c a l H p e R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 9 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 2 T 1.25±0.1 M +0.1 2–0.05 5 U0. 9 2 6 0. 0. ± 3 0 1. 7 2. 65 0. 1 O 0.1 MIN. 2 G 1 0. 0.9± 0.7 - C+0.1 5–0.05 1 1 0. E 0. o : 0 t t n S e m e A c a l H p e R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 10 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symb2ol T Infrared Reflow Peak temperature (package surface temperature) : 260°C or below IR260 M Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds U 9 Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below 7 VPS Peak temperature (package surface temperature) : 215°C or below VP215 Time at temperature of 200°C or higher : 25 to 40 seconds 1 Preheating time at 120 to 150°C O: 30 to 60 seconds 2 Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below G Wave Soldering Peak temperature (molten solder temperature) : 260°C or below WS260 Time at peak temperature : 10 seconds or less C Preheating temperature (package s-urface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of Erosin flux (% mass) : 0.2%(Wt.) or below : Partial Heating Peak temperature (pin temperature) t: 350°C or below HS350 Soldering time (per side of device) n : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below S e Caution Do not use different soldering methods together (except for partial heating). m e A c a l H p e R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 11 of 12 Sep 10, 2012

A Business Partner of Renesas Electronics Corporation. μPG2214TB This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws 2 and/or ordinances, dispose of the product as recommended beTlow. 1. Commission a disposal company able to (with a license to) collect, transport and disMpose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject toU special control) up until fin9al disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. 7 • Do not lick the product or in any way allow it to enter the mouth. 1 O 2 G C - E : t n S e m e A c a l H p e R P n I - p o r D R09DS0050EJ0400 Rev.4.00 Page 12 of 12 Sep 10, 2012

Revision History μPG2214TB Data Sheet Description Rev. Date Page Summary 1.00 Mar 10, 2004 – First edition issued 2.00 Apr 12, 2004 pp.3,4 Modification of ELECTRICAL CHARACTERISTICS 2 T 3.00 Oct 20, 2004 p.1 Modification of ORDERING INFORMATION M pp.7 to 9 Addition of TYPICAL CHARACTERISTICS 4.00 Sep 10, 2012 p.1 Modification of ORDERING INFORMATION U 9 Modification of ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON p.6 EVALUATION BOARD 7 p.8 Modification of TYPICAL CHARACTERISTICS 1 O 2 G C - E : t n S e m e A c a H l p e R P n I - p o r D All trademarks and registered trademarks are the property of their respective owners. C - 1

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