DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS m mmm m mmm PC2757TB, PC2758TB D SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE E U DESCRIPTION The m PC2757TB and m PC2758TB are silicon monolithic integrated circuit designed as 1st frequency down- converter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The m PC2757TB features low current consumption and the m PC2758TB features improved intermodulation. From these N two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The m PC2757TB and m PC2758TB are manufactured using Renesas 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electIrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. T FEATURES • Wideband operation : fRFin = 0.1 to 2.0 GHz, fIFout = 20 to 300 MHz • High-density surface mounting : 6-pin super mNinimold package • Low current consumption : ICC = 5.6 mA TYP. @ m PC2757TB ICC = 11 mA TYP. @ m PC2758TB • Supply voltage : VCC = 2.7 to 3.3 V O • Minimized carrier leakage : Due to double balanced mixer • Equable output impedance : Single-end push-pull IF amplifier • Built-in power save function C APPLICATIONS • Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): m PC2758TB • Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): m PC2757TB S ORDERING INFORMATION Part Number Package Markings Supplying Form Product Type I mPC2757TB-E3 6-pin C1X Embossed tape 8 mm wide. Low current consumption D super Pin 1, 2, 3 face the tape perforation side. mPC2758TB-E3 minimold C1Y Qty 3kpcs/reel. High OIP3 Remark To order evaluation samples, please contact your nearby sales office (Part number for sample order: m PC2757TB-A, m PC2758TB-A). Caution Electro-static sensitive devices Document No. P12771EJ3V0DS00 (3rd edition) The mark shows major revised points. Date Published November 2000 N CP(K)

m mmm PC2757TB,m mmm PC2758TB CONTENTS D 1. PIN CONNECTIONS.............................................................................................................................................3 2. PRODUCT LINE-UP.............................................................................................................................................3 E 3. INTERNAL BLOCK DIAGRAM...........................................................................................................................4 4. SYSTEM APPLICATION EXAMPLE...................................................................................................................4 U 5. PIN EXPLANATION.............................................................................................................................................5 6. ABSOLUTE MAXIMUM RATINGS......................................................................................................................6 N 7. RECOMMENDED OPERATING RANGE............................................................................................................6 8. ELECTRICAL CHARACTERISTICS....................................................................................................................6 I 9. STANDARD CHARACTERISTICS FOR REFERENCE.........T............................................................................7 10. TEST CIRCUIT.....................................................................................................................................................8 N 11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD.................................8 12. TYPICAL CHARACTERISTICS............................................................................................................................9 12.1m mmm PC2757TB......................................O............................................................................................................9 12.2m mmm PC2758TB................................................................................................................................................11 13. S-PARAMETERS................................................................................................................................................13 13.1m mmm PC2757TB...................C.............................................................................................................................13 13.2m mmm PC2758TB................................................................................................................................................14 14. PACKAGE DIMENSIONS....................................................................................................................................15 S 15. NOTE ON CORRECT USE................................................................................................................................16 16. RECOMMENDED SOLDERING CONDITIONS..................................................................................................16 I D 2 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 1. PIN CONNECTIONS m PC2757TB, m PC2758TB in common (Top View) (Bottom View) D Pin No. Pin Name 1 RFinput 3 X 4 4 3 1 2 GND 2 5 5 2 E C 3 LOinput 1 6 6 1 4 PS Example marking is for m PC2757TB 5 VCC U 6 IFoutput 2. PRODUCT LINE-UP (TA = +25°C, VCC = VPS = 3.0 V, ZS = ZL = 50W WWW ) N Items No RF 900 MHz 1.5 GHz 1.9 GHz 900 MHz 1.5 GHz 1.9 GHz 900 MHz 1.5 GHz 1.9 GHz ICC SSB · NF SSB · NF SSB · NF CG CG CG IIP3 IIP3 IIP3 Part No. (mA) (dB) (dB) (dB) (dB) (dB) (dB) (dBm) (dBm) (dBm) mPC2757T I 5.6 10 10 13 15 15 13 - 14 - 14 - 12 mPC2757TB T mPC2758T 11 9 10 13 19 18 17 - 13 - 12 - 11 mPC2758TB mPC8112T N 8.5 9 11 11 15 13 13 - 10 - 9 - 7 mPC8112TB Items 900 MHz 1.5 GHz 1O.9 GHz 900 MHz 1.5 GHz 1.9 GHz IF Output PO(sat) PO(sat) PO(sat) RFLO RFLO RFLO Configuration Packages Part No. (dBm) (dBm) (dBm) (dB) (dB) (dB) mPC2757T 6-pin minimold - 3 - - 8 - - - mPC2757TB C 6-pin super minimold Emitter follower mPC2758T 6-pin minimold +1 - - 4 - - - mPC2758TB 6-pin super minimold mPC8112T S 6-pin minimold - 2.5 - 3 - 3 - 80 - 57 - 55 Open collector mPC8112TB 6-pin super minimold RemIark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. D Cautions 1. The m mmm PC2757 and m mmm PC2758’s IIP3 are calculated with D DDD IM3 = 3 which is the same IM3 inclination asm mmm PC8112. On the other hand, OIP3 of Standard characteristics in page 7 is cross point IP. 2. This document is to be specified for m mmm PC2757TB, m mmm PC2758TB. The other part number mentioned in this document should be referred to the data sheet of each part number. 3 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 3. INTERNAL BLOCK DIAGRAM m(mmm PC2757TB,m mmm PC2758TB in common) D RF IF input output POWER E SAVE U LO VCC GND input 4. SYSTEM APPLICATION EXAMPLE N DIGITAL CELLULAR TELEPHONE m PC2758TB Low noise Tr. I RX IDEMOD. Q T VCO ‚ N PLL SW N PLL I 0˚ O TX PA f Driver 90˚ Q C S I D 4 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 5. PIN EXPLANATION (Bothm mmm PC2757TB, 2758TB) Pin Pin Applied Pin Voltage Function and Application Internal Equivalent Circuit No. Name Voltage (V) (V)Note D 1 RFinput - 1.2 This pin is RF input for mixer VCC designed as double balance type. To IF This circuit contributes to suppress Amp. spurious signal with minimum LO E From and bias power consumption. LO Also this symmetrical circuit can keep specified performance insensi- 1 tive to process-condition U distribution. 2 GND GND – This pin is ground of IC. - N Must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. (Track length shoIuld be kept as short as possible.) T 3 LOinput – 1.3 This pin is LO input for local buffer VCC designed as differential amplifier. Mixer Recommendable input level is –15 toN 0 dBm. Also this symmetrical 3 circuit can keep specified performance insensitive to process- condition distribution. O 4 PS VCC or GND – This pin is for power-save function. VCC This pin can control ON/OFF operation with bias as follows; C 4 Bias: V Operation VPS ‡ 2.5 ON 0 to 0.5 OFF S Rise time/fall time using this pin are approximately 10 ms. 5 VCC 2.7 to 3.3 – Supply voltage 3.0 – 0.3 V for - operation. Must be connected I bypass capacitor. (example: 1 000 D pF) to minimize ground impedance. 6 IFoutput – 1.7 This pin is output from IF buffer VCC amplifier designed as single-ended push-pull type. This pin is assigned 6 for emitter follower output with low- impedance. In the case of connecting to high-impedance stage, please attach external matching circuit. Note Each pin voltage is measured at VCC = 3.0 V 5 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 6. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit D Supply Voltage VCC TA = +25°C 5.5 V Power Dissipation of Package Allowance PD Mounted on 50 · 50 · 1.6 mm 270 mW double sided copper clad epoxy glass board at TA = +85°C E Operating Ambient Temperature TA –40 to +85 °C Storage Temperature Tstg –55 to +150 °C PS Pin Voltage VPS TA = +25°C U5.5 V 7. RECOMMENDED OPERATING RANGE N Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA –40 +25 +85 °C I LO Input Power PLOin –15 –10 0 dBm T 8. ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50W WWW ) N mPC2757TB mPC2758TB Parameter Symbol Conditions Unit MIN. TYP. MAX. MIN. TYP. MAX. Circuit Current ICC No input signOal 3.7 5.6 7.7 6.6 11 14.8 mA RF Input Frequency fRFin CG ‡ (CG1 –3 dB) 0.1 - 2.0 0.1 - 2.0 GHz fIFout = 130 MHz constant IF Output Frequency fIFout CG ‡ (CG1 –3 dB) 20 - 300 20 - 300 MHz CfRFin = 0.8 GHz constant Conversion Gain 1 CG1 fRFin = 0.8 GHz, fIFout = 130 MHz 12 15 18 16 19 22 dB PRFin = –40 dBm, Upper local Conversion Gain 2 CG2 fRFin = 2.0 GHz, fIFout = 250 MHz 10 13 16 14 17 20 dB S PRFin = –40 dBm, Lower local SSB Noise Figure 1 SSB • NF1 fRFin = 0.8 GHz, fIFout = 130 MHz, - 10 13 - 9 12 dB SSB mode, Upper local SSB Noise FigIure 2 SSB • NF2 fRFin = 2.0 GHz, fIFout = 250 MHz, - 13 16 - 13 15 dB SSB mode, Lower local D Saturated Output PO(sat) 1 fRFin = 0.8 GHz, fIFout = 130 MHz –11 –3 - –7 +1 - dBm Power 1 PRFin = –10 dBm, Upper local Saturated Output PO(sat) 2 fRFin = 2.0 GHz, fIFout = 250 MHz –11 –8 - –7 –4 - dBm Power 2 PRFin = –10 dBm, Lower local 6 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 9. STANDARD CHARACTERISTICS FOR REFERENCE (Unless otherwise specified: TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50W WWW ) D Reference Value Parameter Symbol Conditions Unit mPC2757TB mPC2758TB 3rd Order Distortion Output OIP3 fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz, +5 +11 dBm Intercept Point Cross point IP E LO Leakage at RF pin LOrf fLOin = 0.8 to 2.0 GHz –35 –30 dBm LO Leakage at IF pin LOif fLOin = 0.8 to 2.0 GHz –23 –15 dBm Circuit Current at Power Save ICC(PS) VPS = 0.5 V 0.1U 0.1 mA Mode N I T N O C S I D 7 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 10. TEST CIRCUIT m mmm PC2757TB,m mmm PC2758TB D (Top View) POWER Signal Generator 1 000 pF SAVE 3 LOinput PS 4 50 W C2 E 3 300 pF 2 GND VCC 5 3 V Signal Generator C3 1 000 pF 1 RFinput IFoutput 6 50 W C1 3 300 pF 50 W U C4 Spectrum Analyzer 11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD N I T C3 PS bias LO input C2 PS N GND VCC C4 O fi Voltage supply inRpFut C1 C C5 IoFutput S Component List Notes1. 35 · 42 · 0.4 mm double sided copper clad polyimide board. No. IValue 2. Back side: GND pattern 3. Solder plated on pattern C1, C2 D1 000 pF 4. (cid:176) {: Through holes C3 to C5 3 300 pF Application explanation This IC is guaranteed on the test circuit constructed with 50 W equipment and transmission line. This IC, however, does not have 50 W input/output impedance, but electrical characteristics such as conversion gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of RF input with external circuit (50 W termination or impedance matching.) 8 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 12. TYPICAL CHARACTERISTICS (TA = +25(cid:176) (cid:176)(cid:176)(cid:176) C, on Measurement Circuit) 12.1 m mmm PC2757TB D CIRCUIT CURRENT vs. SUPPLY VOLTAGE CONVERSION GAIN vs. RF INPUT FREQUENCY 9 20 No input signal 8 VCC = VPS 18 A) 7 dB) E (mC 6 CG ( 16 nt IC 5 ain 14 e G U urr 4 n 12 C o Circuit 32 onversi 10 VCC = VPS = 3.0 V C PRFin = –40 dBm 8 1 PLOin = –10N dBm fIFout = 130 MHz 0 6 0 1 2 3 4 5 6 0 0.5 1.0 1.5 2.0 2.5 Supply Voltage VCC (V) RF Input Frequency fRFin (GHz) SSB NOISE FIGURE vs. RF INPUT FREQUENCY COINVERSION GAIN vs. IF OUTPUT FREQUENCY 15 20 dB) 14 T18 VPCRCFi n= = V –P4S 0= d3B.0m V F ( 13 B) PLOin = –10 dBm B • N 12 CG (d 16 fRFin = 800 MHz gure SS 1110 N n Gain 1142 se Fi 9 ersio 10 Noi 8 VCC O= VPS = 3.0 V onv B PRFin = –40 dBm C 8 SS 7 PLOin = –10 dBm fIFout = 130 MHz 6 6 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 100 200 300 400 500 600 700 RF Input Frequency fRFin (GHz) IF Output Frequency fIFout (MHz) C CONVERSION GAIN vs. LO INPUT POWER CONVERSION GAIN vs. LO INPUT POWER 25 25 20 20 B) S B) d d G ( 15 G ( 15 C C n n Gai 10 Gai 10 n I n o o Dersi 5 ersi 5 nv VCC = VPS = 3.0 V nv VCC = VPS = 3.0 V Co 0 fRFin = 900 MHz Co 0 fRFin = 2.0 GHz fLOin = 800 MHz fLOin = 1.9 GHz PRFin = –40 dBm PRFin = –40 dBm –5 –5 –50 –40 –30 –20 –10 0 10 –50 –40 –30 –20 –10 0 10 LO Input Power PLOin (dBm) LO Input Power PLOin (dBm) 9 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB IF OUTPUT POWER OF EACH TONE, IF OUTPUT POWER OF EACH TONE, Bm)Bm) IM3 vs. RF INPUT POWER Bm)Bm) IM3 vs. RF INPUT POWER of Each Tone P (dIFout(each) (ddulation Distortion IM3 –––21123000000 VfPfRLOLCFOiiCnni n=== = V89 –03P1S00 0= MM Pd3HHBo.0uzzmt V of Each Tone P (dIFout(each) (ddulation Distortion IM3 –––21123000000 VfPfRLOLCFOiiCnni n=== = V21 – .PG71S5 0=H GPzd3BoH.u0mtz V E D er mo –40 er mo –40 ut Power Inte –50 IM3 ut Power Inte –50 IMU3 pd –60 pd –60 utOr utOr IF O3rd –70–50 –45 –40 –35 –30 –25 –20 –15 –10 –5 IF O3rd –70–50 –45 –40 –35 –30 –25 –20 –15 –10 –5 RF Input Power PRFin (dBm) RF InNput Power PRFin (dBm) LO LEAKAGE AT RF PIN vs. LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY LO INPUT FREQUENCY –10 –10 PLOin = –10 dBm PLOin = –10 dBm Bm) –15 VCC = VPS = 3.0 V Bm) –15 VICC = VPS = 3.0 V O (drf ––2205 O (dif –2T0 Pin L –30 Pin L –25 F –35 F LO Leakage at R ––––44550505 O NLO Leakage at I –––334050 –60 –45 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 LO Input Frequency fLOin (GHz) LO Input Frequency fLOin (GHz) Remark The graphs indicate nominal characteristics. C S I D 10 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 12.2 m mmm PC2758TB CIRCUIT CURRENT vs. SUPPLY VOLTAGE CONVERSION GAIN vs. RF INPUT FREQUENCY 20 D No input signal 24 VCC = VPS = 3.0 V VCC = VPS PRFin = –40 dBm mA) 15 dB) 22 PfIFLoOuitn == 1–3100 MdBHmz (C G ( 20 ent IC 10 ain C 18 E Curr n G 16 Circuit 5 nversio 14 U o C 12 0 10 0 1 2 3 4 5 6 0 0.5 1.0 1.5 2.0 2.5 3.0 Supply Voltage VCC (V) RFN Input Frequency fRFin (GHz) SSB NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY 20 20 VCC = VPS = 3.0 V dB) PRFin = –40 dBm 19I F ( PLOin = –10 dBm B) 18 B • N 15 fIFout = 130 MHz CG (dT17 B Noise Figure SS 10 N Conversion Gain 1111153642 VPCRCFi n= = V –P4S 0= d3B.0m V SS 11 PLOin = –10 dBm O fRFin = 800 MHz 5 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 RF Input Frequency fRFin (GHz) IF Output Frequency fIFout (MHz) CONVERSION GAIN vs. LO INPUT POWER CONVERSION GAIN vs. LO INPUT POWER 25 25 C 20 20 B) B) d d G ( 15 G ( 15 C C n S n Gai 10 Gai 10 n n o o ersi 5 ersi 5 nvI VCC = VPS = 3.0 V nv VCC = VPS = 3.0 V o o C 0 fRFin = 800 MHz C 0 fRFin = 2.0 GHz D fLOin = 930 MHz fLOin = 1.9 GHz PRFin = –40 dBm PRFin = –40 dBm –5 –5 –50 –40 –30 –20 –10 0 10 –50 –40 –30 –20 –10 0 10 LO Input Power PLOin (dBm) LO Input Power PLOin (dBm) 11 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB IF OUTPUT POWER OF EACH TONE, IF OUTPUT POWER OF EACH TONE, m)m) IM3 vs. RF INPUT POWER m)m) IM3 vs. RF INPUT POWER B B (dBFout(each) (don IM3 21000 (dBFout(each) (don IM3 21000 D e PIstorti –10 e PIstorti –10 ach Tonation Di ––2300 ach Tonation Di ––2300 E Eul –40 Eul –40 of od of od wer erm –50 ffRRFF12 == 880005 MMHHzz wer erm –50 UffRRFF12 == 22..00 0G5H GzHz put Poder Int ––7600 fPLOLO =in 9=0 –01 M0 HdBzm put Poder Int ––6700 fPLOLO =in 1=. 9– 1G0H dzBm utOr VCC = VPS = 3.0 V utOr VCC = VPS = 3.0 V IF O3rd –80–50 –40 –30 –20 –10 0 10 IF O3rd –80–50 –40 –N30 –20 –10 0 10 RF Input Power PRFin (dBm) RF Input Power PRFin (dBm) LO LEAKAGE AT RF PIN vs. LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY LO INPUT FREQUENCY 0 0 m) m) I B –10 B –10 O (drf O (dif T Pin L –20 Pin L –20 F –30 F –30 LO Leakage at R ––4500 PVLCOCi n= = V –PO1S 0= d3B.0m V NLO Leakage at I ––4500 PVLCOCi n= = V –P1S 0= d3B.0m V –60 –60 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 LO Input Frequency fLOin (GHz) LO Input Frequency fLOin (GHz) Remark The graphs indicaCte nominal characteristics. S I D 12 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 13. S-PARAMETERS 13.1 m mmm PC2757TB D Calibrated on pin of DUT S11 Z S11 Z REF 1.0 Units REF 1.0 Units E 1 200.0 mUnits/ 1 200.0 mUnits/ 56.422 W –275.59 W 104.03 W –413.42 W hp hp MARKER 1 MARKER 1 500.0 MHz 500.0 MHz U 1 1 N 2 2 43 RF PORT 5 4 3 RF PORT 5 VCC = VPS = 3.0V VCC = 3.0V VPS = GND 1:500 MHz 56.422 W -j275.59 W START 0.050000000 GHz 1:500 MHz 104.03 W -j413.42 W START 0.050000000 GHz 2:900 MHz 38.68 W -j152.71 W STOP 3.000000000 GHz 2:900 MHz 74.82 W -j243.06 W STOP 3.000000000 GHz 3:1 500 MHz 31.699 W -j88.102 W 3I:1 500 MHz 59.266 W -j154.98 W 4:1 900 MHz 29.209 W -j65.926 W 4:1 900 MHz 51.227 W -j124.55 W 5:2 500 MHz 29.209 W -j44.758 W T5:2 500 MHz 43.996 W -j95.117 W S11 Z S11 Z REF 1.0 Units REF 1.0 Units 1 200.0 mUnits/ 1 200.0 mUnits/ 90.969 W –243.41 W N 114.16 W –400.03 W hp hp MARKER 1 MARKER 1 500.0 MHz 500.0 MHz O 1 1 2 2 3 5 4 3 5 4 LO PORT LO PORT C VCC = VPS = 3.0V VCC = 3.0V VPS = GND 1:500 MHz 90.969 W -j243.41 W START 0.050000000 GHz 1:500 MHz 114.16 W -j400.03 W START 0.050000000 GHz 2:900 MHz 67.828 W -j150.32 W STOP 3.000000000 GHz 2:900 MHz 75.133 W -j242.73 W STOP 3.000000000 GHz 3:1 500 MHz 51.488 W -j97.273 W 3:1 500 MHz 53.516 W -j154.21 W 4:1 900 MHz 44.621 W -j77.352 W 4:1 900 MHz 44.789 W -j124.74 W 5:2 500 MSHz 39.627 W -j56.738 W 5:2 500 MHz 37.004 W -j93.828 W S22 Z S22 Z REF 1.0 Units REF 1.0 Units 1 200.0 mUnits/ 1 200.0 mUnits/ 19.146 W 7.2041 W 066.38 W –1.3174 kW Ihp hp MARKER 1 MARKER 1 130.0 MHz 130.0 MHz D 1 2 1 2 IF PORT IF PORT VCC = VPS = 3.0V VCC = 3.0V VPS = GND 1:130 MHz 19.146 W -j7.2041 W START 0.050000000 GHz 1:130 MHz 66.38 W -j1.3174 kW START 0.050000000 GHz 2:250 MHz 22.73 W -j12.909 W STOP 3.000000000 GHz 2:250 MHz 88.281 W -j725.41 W STOP 3.000000000 GHz 13 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 13.2 m mmm PC2758TB Calibrated on pin of DUT S11 Z S11 Z D REF 1.0 Units REF 1.0 Units 1 200.0 mUnits/ 1 200.0 mUnits/ 63.312 W –261.34 W 107.13 W –395.56 W hp hp MARKER 1 MARKER 1 500.0 MHz 500.0 MHz E 1 1 U 2 5 2 5 43 RF PORT 4 3 RF PORT VCC = VPS = 3.0V VCC = 3.0V VPS = GND 1:500 MHz 63.312 W -j261.34 W START 0.050000000 GHz 1:500 MHz 107.13 W -j395.56 W START 0.050000000 GHz 2:900 MHz 40.227 W -j142.36 W STOP 3.000000000 GHz 2:900 MHz 78.711 W -j234.41 WNSTOP 3.000000000 GHz 3:1 500 MHz 32.441 W -j79.68 W 3:1 500 MHz 61.922 W -j148.82 W 4:1 900 MHz 31.107 W -j58.273 W 4:1 900 MHz 52.629 W -j119.55 W 5:2 500 MHz 30.871 W -j39.08 W 5:2 500 MHz 44.766 W -j90.578 W S11 Z S11 Z I REF 1.0 Units REF 1.0 Units 1 200.0 mUnits/ 1 200.0 mUnits/ 73.398 W –188.13 W 100.31T W –374.75 W hp hp MARKER 1 MARKER 1 500.0 MHz 500.0 MHz N 1 1 5 4 3 2 O 5 43 2 LO PORT LO PORT VCC = VPS = 3.0V VCC = 3.0V VPS = GND 1:500 MHz 73.398 W -j188.13 W START 0.050000000 GHz 1:500 MHz 100.31 W -j374.75 W START 0.050000000 GHz 2:900 MHz 64.551 W -j112.66 W STOP 3.000000000 GHz 2:900 MHz 73.148 W -j223.07 W STOP 3.000000000 GHz 3:1 500 MHz 53.133 W -j72.941 W 3:1 500 MHz 57.719 W -j144.02 W 4:1 900 MHz 48.111 W -j57.307 W 4:1 900 MHz 50.738 W -j119.52 W C 5:2 500 MHz 44.541 W -j41.564 W 5:2 500 MHz 41.836 W -j90.25 W S22 Z S22 Z REF 1.0 Units REF 1.0 Units 1 200.0 mUnits/ 1 200.0 mUnits/ 15.696 W 9.5011 W 106.69 W –1.3425 kW hp S hp MARKER 1 MARKER 1 130.0 MHz 130.0 MHz 1 2 I 1 D 2 IF PORT IF PORT VCC = VPS = 3.0V VCC = 3.0V VPS = GND 1:130 MHz 15.696 W -j9.5811 W START 0.050000000 GHz 1:130 MHz 106.69 W -j1.3425 kW START 0.050000000 GHz 2:250 MHz 21.4 W -j16.331 W STOP 3.000000000 GHz 2:250 MHz 83.75 W -j711.47 W STOP 3.000000000 GHz 14 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 14. PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) D 2.1– 0.1 1.25– 0.1 E +0.1 2–0.05 2 65 0. 0. 3 0. –0 1. U 2. 65 0. 0.1 MIN. N 1 0. –9 7 0. 0. I +0.1 5–0.05 1 1T 0. 0. o 0 t N O C S I D 15 Data Sheet P12771EJ3V0DS00

m mmm PC2757TB,m mmm PC2758TB 15. NOTE ON CORRECT USE (1) Observe precautions for handling because of electrostatic sensitive devices. D (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). Keep the track length of the ground pins as short as possible. (3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin. (4) The DC cut capacitor must be attached to input pin. E 16. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. U Soldering Method Soldering Condition Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below IR35-00-3 N Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote VPS Package peak temperature: 215°C or below VP15-00-3 Time: 40 seconds or less (at 200°C) I Count: 3, Exposure limit: NoneNote T Wave Soldering Soldering bath temperature: 260°C or below WS60-00-1 Time: 10 seconds or less Count: 1, Exposure limit: NoneNote Partial Heating Pin temperature: 300°C N – Time: 3 seconds or less (per side of device) Exposure limit: NoneNote Note After opening the dry pack, keep it in aO place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended Csoldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). S I D 16 Data Sheet P12771EJ3V0DS00

NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of thDese circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property E rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. U 5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized foNr use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by California Eastern Laboratories or Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the rIange specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunctiTons or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by N fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EOU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures requCired by such laws and regulations. 10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories. 12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas S Electronics products, or if you have any other inquiries. NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. NOTE 3: Products and product information are subject to change without notice. I D CEL Headquarters • 4590 Patrick Henry Drive, Santa Clara, CA 95054 • Phone (408) 919-2500 • www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus