DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµ PC2710TB D 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER E DESCRIPTION U The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon N nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES I (cid:127) Supply voltage : VCC = 4.5 to 5.5 V (cid:127) Circuit current : I CC = 22 mA TYP. @VTCC = 5.0 V (cid:127) Power gain : G P = 33 dB TYP. @ f = 500 MHz (cid:127) Medium output power : P O(sat) = +13.5 dBm TYP. @ f = 500 MHz (cid:127) Upper limit operating frequency : f u = 1.0 GHz TYP. @ 3 dB bandwidth (cid:127) Port impedance : input/outputN 50 Ω (cid:127) High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION (cid:127) PA driver for 900 MHz band cellular telephone O ORDERING INFORMATION Part Number Package Marking Supplying Form C µPC2710TB-E3 6-pin super minimold C1F Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. S Remark To order evaluation samples, please contact your nearby sales office. (Part number for sample order: µPC2710TB-A) I D Caution Electro-static sensitive devices Document No. P13443EJ3V0DS00 (3rd edition) Date Published January 2001 N CP(K) The mark shows major revised points

µµµµPC2710TB PIN CONNECTIONS Pin No. Pin Name D (Top View) (Bottom View) 1 INPUT 3 F 4 4 3 2 GND 1 3 GND 2 5 5 2 E C 4 OUTPUT 1 6 6 1 5 GND 6 U VCC PRODUCT LINE-UP (TA = +25°°°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ) N Part No. fu PO(sat) GP NF ICC Package Marking (GHz) (dBm) (dB) (dB) (mA) µPC2708T 6-pin minimold 2.9 +10.0 15 6.5 26 C1D µPC2708TB I6-pin super minimold µPC2709T 6-pin minimold 2.3 +11.5 23 5.0 T25 C1E µPC2709TB 6-pin super minimold µPC2710T 6-pin minimold 1.0 +13.5 33 3.5 22 C1F µPC2710TB N 6-pin super minimold µPC2776T 6-pin minimold 2.7 +8.5 23 6.0 25 C2L µPC2776TB 6-pin super minimold O Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Notice The package size distinguishes between minimold and super minimold. C S I D 2 Data Sheet P13443EJ3V0DS

µµµµPC2710TB SYSTEM APPLICATION EXAMPLE EXAMPLE OF 900 MHz BAND DIGITAL CELLULER TELEPHONE D RX I DEMOD. Q E PLL PLL SW U I 0° Driver N TX φ PA µPC2710TB 90° Q I T N O C S I D 3 Data Sheet P13443EJ3V0DS

µµµµPC2710TB PIN EXPLANATION Applied Pin Pin D Pin Name Voltage Voltage Function and Applications Internal Equivalent Circuit No. Note (V) (V) 1 INPUT – 0.90 Signal input pin. A internal matching circuit, configured E with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the U deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. N 2 GND 0 – Ground pin. This pin should 6 3 be connected to system 4 5 ground with minimum inductance. Ground patterIn on the board should be formed T as wide as possible. 1 All the ground pins must be connected together with wide ground pattern to decrease N impedance difference. 4 OUTPUT Voltage as – Signal output pin. The 3 2 5 same as inductor must be attached VCC between VCC and output pins O through to supply current to the external internal output transistors. inductor 6 VCC 4.5 to 5.5 – Power supply pin, which C biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its S impedance. Note Pin voltage is measured at VCC = 5.0 V I D 4 Data Sheet P13443EJ3V0DS

µµµµPC2710TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit D Supply Voltage VCC TA = +25°C, pin 4 and pin 6 5.8 V Total Circuit Current ICC TA = +25°C 60 mA Power Dissipation PD Mounted on double-sided copper clad 270 mW 50 × 50 × 1.6 mm epoxy glass PWB E TA = +85°C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg U−55 to +150 °C Input Power Pin TA = +25°C +10 dBm RECOMMENDED OPERATING RANGE N Parameter Symbol MIN. TYP. MAX. Unit Remark Supply Voltage VCC 4.5 5.0 5.5 V The same voltage should be I applied to pin 4 and pin 6. T ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C, VCC = Vout = 5.0 V, ZS = ZL = 50 ΩΩΩΩ) N Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No signal 16 22 29 mA Power Gain GP f = 500 MHz 30 33 36.5 dB O Saturated Output Power PO(sat) f = 500 MHz, Pin = –8 dBm +11.0 +13.5 – dBm Noise Figure NF f = 500 MHz – 3.5 5.0 dB Upper Limit Operating fu 3 dB down below flat gain at f = 0.1 GHz 0.7 1.0 – GHz Frequency C Isolation ISL f = 500 MHz 34 39 – dB Input Return Loss RLin f = 500 MHz 3 6 – dB Output Return Loss RLout f = 500 MHz 9 12 – dB S Gain Flatness ∆GP f = 0.1 to 0.6 GHz – ±0.8 – dB I D 5 Data Sheet P13443EJ3V0DS

µµµµPC2710TB TEST CIRCUIT VCC D 1 000 pF C3 L E 6 50 Ω C1 1 4 C2 50 Ω IN OUT 1 000 pF 1 000 pF U 2, 3, 5 N COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL EXAMPLE OF ACTURAL APPLICATION COMPONENTS I CHARACTERISTICS Type Value TType Value Operating Frequency C1, C2 Bias Tee 1 000 pF C1 to C3 Chip Capacitor 1 000 pF 100 MHz or higher C3 Capacitor 1 000 pF L Chip Inductor 300 nH 10 MHz or higher N L Bias Tee 1 000 nH 100 nH 100 MHz or higher 10 nH 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN O The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and ACC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. S CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypassI capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. D The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). 6 Data Sheet P13443EJ3V0DS

µµµµPC2710TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD D AMP-2 E Top View 3 12 IN U OUT F C1 C C 4 5 L 6 Mounting Direction N VCC C I T COMPONENT LIST Notes 1. 30 × 30 × 0.N4 mm double sided copper clad polyimide board. Value 2. Back side: GND pattern C 1 000 pF 3. Solder plated on pattern L 300 nH 4. : Through holes O For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF 6-PIN SUPER MINIMOLD SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P13252E). C S I D 7 Data Sheet P13443EJ3V0DS

µµµµPC2710TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C) CIRCUIT CURRENT vs. OPERATING CIRCUIT CURRENT vs. SUPPLY VOLTAGE AMBIENT TEMPERATURE D 40 40 No signal No signal 35 35 VCC = 5.0 V A) 30 A) 30 m m E ent I (CC 2250 ent I (CC 2205 urr urr uit C 15 uit C 15 U Circ 10 Circ 10 5 5 0 0 1 2 3 4 5 6 −60 −40 −2N0 0 +20 +40 +60 +80 +100 Supply Voltage VCC (V) Operating Ambient Temperature TA (°C) NOISE FIGURE, POWER GAIN vs. FREQUENCY IPOWER GAIN vs. FREQUENCY 35 35 VCC = 5.5 V T VCC = 5.0 V VCC = 5.0 V B) B) B) gure NF (d4.5 Gain G (dP 30 VCC = 5.5 V VCC = 4.5 V GP NGain G (dP 30 TA = −40°CTA = +25°TCA = +85°C e Fi 4 wer NF wer Nois3.5 Po VCC = 4.5 V VCC = 5.0 VO Po 3 25 25 0.1 0.3 1.0 2.0 0.1 0.3 1.0 2.0 FrequenCcy f (GHz) Frequency f (GHz) INPUT RETURN LOSS, OUTPUT ISOLATION vs. FREQUENCY RETURN LOSS vs. FREQUENCY 0 S 0 VCC = 5.0 V VCC = 5.0 V −10 B)dB) −10 dB) I RL (dinRL (out Isolation ISL (D−−−234000 nput Return Loss utput Return Loss −−−234000 RLin RLout IO −50 −50 0.1 0.3 1.0 2.0 0.1 0.3 1.0 2.0 Frequency f (GHz) Frequency f (GHz) 8 Data Sheet P13443EJ3V0DS

µµµµPC2710TB OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +20 +20 f = 0.5 GHz VCC = 5.5 V VCC = 5.0 V TA = +85°C f = 0.5 GHz +15 +15 m) m) D ower P (dBout +1+500 VCC = 4V.5C CV = 5.0 V wer P (dBout +1+500 TA = −4T0EA° C= +25°C P o Output −5 utput P −5 O −10 −10 U −15 −15 −40 −35 −30 −25 −20−15 −10 −5 0 +5 +10 −40 −35 −30 −25−20 −15 −10 −5 0 +5 +10 Input Power Pin (dBm) Input Power Pin (dBm) N OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER +20 +20 f = 1.0 GHz VCC = 5.0 V VCC = 5.0 V +15 +15 If = 0.5 GHz P (dBm)out +1+50 VCC = 5.5 V P (dBm)outT+1+05 Output Power −05 VCC = 4.5 V N Output Power −50 f = 1.0 GHz −10 −10 −15 O −15 −40 −35 −30 −25−20 −15 −10 −5 0 +5 +10 −40 −35 −30 −25 −20 −15 −10 −5 0 +5 +10 Input Power Pin (dBm) Input Power Pin (dBm) SATURATED OUTPUT POWER vs. 3RD ORDER INTERMODULATION DISTORTION C FREQUENCY vs. OUTPUT POWER OF EACH TONE +20 Bc) −60 er P (dBm)O (sat) +++111486 Pin =S −8 dBm VCC = 5.5 VVCC = 5.0 V Distortion IM (d3 −−5400 VCffC12 === 500...055 00V02 GGHHzz utput Pow I+12 odulation −30 VCC = 5.5 V O +10 VCC = 4.5 V m Durated +8 er Inter −20 VCC = 4.5 V at d S +6 Or −10 0.1 0.2 0.5 1.0 2.0 d −10 −8 −6 −4 −2 0 +2 +4 +6 +8 +10 3r Frequency f (GHz) Output Power of Each Tone PO (each) (dBm) 9 Data Sheet P13443EJ3V0DS

µµµµPC2710TB S-PARAMETERS (TA = +25°°°°C, VCC = Vout = 5.0 V) S11-FREQUENCY D E U 0.1 GHz 3.0 GHz 2.0 GHz 1.0 GHz N I T S22- FREQUENCY N O 3.0 GHz C 0.1 GHz 2.0 GHz 1.0 GHz S I D 10 Data Sheet P13443EJ3V0DS

µµµµPC2710TB TYPICAL S-PARAMETER VALUES (TA = +25°°°°C) VCC = Vout = 5.0 V, ICC = 22 mA D FREQUENCY S11 S21 S12 S22 K MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100.0000 0.306 2.5 43.072 −8.4 0.012 15.2 0.156 E2.7 1.08 200.0000 0.324 5.2 43.517 −17.1 0.010 10.7 0.164 2.1 1.17 300.0000 0.356 5.3 44.432 −26.5 0.010 20.2 0.185 0.3 1.10 400.0000 0.400 2.5 45.513 −36.9 0.012 26.9 0.225 −5.5 0.92 500.0000 0.439 −3.3 45.679 −48.1 0.012 27.0 0.2U55 −15.4 0.85 600.0000 0.469 −10.2 45.670 −59.7 0.013 31.3 0.283 −27.6 0.77 700.0000 0.481 −17.9 44.793 −71.8 0.014 34.9 0.301 −40.2 0.74 800.0000 0.488 −26.7 43.016 −84.3 0.014 27.9 0.312 −54.9 0.74 900.0000 0.479 −34.5 40.519 −96.0 0.013 26.6 0.316 −67.7 0.78 N 1000.0000 0.465 −41.2 37.946 −107.3 0.016 30.8 0.311 −79.5 0.79 1100.0000 0.448 −49.3 35.122 −117.9 0.016 26.6 0.307 −92.2 0.85 1200.0000 0.417 −54.9 32.108 −128.0 0.015 39.5 0.282 −104.6 0.99 1300.0000 0.387 −61.2 29.221 −137.0 0.015 39.7 0.270 −115.5 1.12 1400.0000 0.350 −65.2 26.656 −145.8 0.0I15 50.2 0.248 −127.0 1.27 1500.0000 0.316 −70.8 23.895 −153.9 0.013 50.8 0.236 −136.2 1.56 T 1600.0000 0.292 −74.0 21.576 −161.6 0.016 56.6 0.215 −145.3 1.49 1700.0000 0.256 −76.9 19.567 −168.1 0.015 69.0 0.200 −155.2 1.71 1800.0000 0.245 −80.5 17.743 −174.4 0.018 61.7 0.196 −162.5 1.59 1900.0000 0.215 −82.9 16.040 179.6 0.017 70.0 0.180 −173.4 1.88 N 2000.0000 0.201 −85.6 14.717 173.5 0.021 71.2 0.175 −178.1 1.71 2100.0000 0.177 −84.4 13.475 168.8 0.020 83.0 0.166 172.0 1.94 2200.0000 0.161 −88.8 12.327 163.1 0.021 76.7 0.171 167.7 1.99 2300.0000 0.145 −88.7 11.154 158.7 0.022 87.9 0.159 159.1 2.08 2400.0000 0.124 −90.3 O10.262 154.4 0.023 81.4 0.164 154.0 2.15 2500.0000 0.113 −89.8 9.490 150.4 0.025 91.9 0.158 147.0 2.19 2600.0000 0.107 −91.9 8.793 146.4 0.028 88.7 0.166 141.8 2.06 2700.0000 0.091 −92.2 8.149 142.4 0.030 93.4 0.175 135.7 2.13 2800.0000 0.081 −94.9 7.652 138.9 0.031 92.1 0.183 131.6 2.13 C 2900.0000 0.067 −97.4 7.134 135.1 0.031 93.0 0.191 123.4 2.26 3000.0000 0.055 −103.8 6.726 131.5 0.039 88.3 0.200 118.9 1.97 3100.0000 0.039 −95.6 6.295 128.4 0.039 89.6 0.203 111.5 2.08 S I D 11 Data Sheet P13443EJ3V0DS

µµµµPC2710TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) D 2.1±0.1 1.25±0.1 E +0.1 2–0.05 2 65 0. 0. 3 0. ±2.0 1. 65 U 0. 0.1 MIN. N 1 0. ± 9 7 0. 0. I+0.1 5–0.05 1 0.1 T 0. o 0 t N O C S I D 12 Data Sheet P13443EJ3V0DS

µµµµPC2710TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). D All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. E (5) The DC cut capacitor must be attached to input pin and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions.U Soldering Method Soldering Conditions Recommended Condition Symbol N Infrared Reflow Package peak temperature: 235°C or below IR35-00-3 Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote VPS Package peak temperature: 215°C or below I VP15-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: NoneNote T Wave Soldering Soldering bath temperature: 260°C or below WS60-00-1 Time: 10 seconds or less Count: 1, Exposure limit: NoneNote N Partial Heating Pin temperature: 300°C or below – Time: 3 seconds or less (per side of device) Exposure limit: NoneNote O Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). C For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). S I D 13 Data Sheet P13443EJ3V0DS

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