Transistors with built-in Resistor UNR921xJ Series (UN921xJ Series) Silicon NPN epitaxial planar type Unit: mm For digital circuits 11..6000+–±000...000535 80±0.05 0.12+–00..0013 0. ■ Features 3 •Creodsutcst cioann obfe trheed nuucemdb tehrr oofu gpha rdtso.wnsizing of the equipment and 1 2 +0.050.85–0.03 1.60±0.05 5˚ (0.375) •SS-Mini type package, allowing automatic insertion through tape 0.27±0.02 0) 8 packing. (0.50)(0.50) (0. ■ Resistance by PaMrta rNkiungm Sbymerbol (R1) (R2) 5˚ 0 to 0.02+0.050.70–0.03 •UNR9210J (UN9210J) 8L 47 kΩ  •UNR9211J (UN9211J) 8A 10 kΩ 10 kΩ •UNR9212J (UN9212J) 8B 22 kΩ 22 kΩ 1: Base max. •UNR9213J (UN9213J) 8C 47 kΩ 47 kΩ 2: Emitter 0.10 •UNR9214J (UN9214J) 8D 10 kΩ 47 kΩ 3: Collector EIAJ: SC-89 SSMini3-F1 Package •UNR9215J (UN9215J) 8E 10 kΩ  •UNR9216J (UN9216J) 8F 4.7 kΩ  Internal Connection •UNR9217J (UN9217J) 8H 22 kΩ  •UNR9218J (UN9218J) 8I 0.51 kΩ 5.1 kΩ R 1 C •UNR9219J (UN9219J) 8K 1 kΩ 10 kΩ B •UNR921AJ 8X 100 kΩ 100 kΩ R 2 •UNR921BJ 8Y 100 kΩ  E •UNR921CJ 8Z  47 kΩ •UNR921DJ(UN921DJ) 8M 47 kΩ 10 kΩ •UNR921EJ (UN921EJ) 8N 47 kΩ 22 kΩ •UNR921FJ (UN921FJ) 8O 4.7 kΩ 10 kΩ •UNR921KJ(UN921KJ) 8P 10 kΩ 4.7 kΩ •UNR921LJ (UN921LJ) 8Q 4.7 kΩ 4.7 kΩ •UNR921MJ EL 2.2 kΩ 47 kΩ •UNR921NJ EX 4.7 kΩ 47 kΩ •UNR921TJ (UN921TJ) EZ 22 kΩ 47 kΩ •UNR921VJ FD 2.2 kΩ 2.2 kΩ ■ Absolute Maximum Ratings T = 25°C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO Collector-emitter voltage (Base open) V 50 V CEO Collector current I 100 mA C Total power dissipation PT 125 mW Junction temperature T 125 °C j Storage temperature T −55 to +125 °C stg Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2004 SJH00039BED 1

UNR921xJ Series Transistors with built-in Resistor ■ Electrical Characteristics T = 25°C ± 3°C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 µA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cut-off current (Emitter open) I V = 50 V, I = 0 0.1 µA CBO CB E Collector-emitter cut-off current (Base open) I V = 50 V, I = 0 0.5 µA CEO CE B Emitter- UNR9210J/9215J/ I V = 6 V, I = 0 0.01 mA EBO EB C base 9216J/9217J/921BJ cut-off UNR9213J/921AJ 0.1 current UNR9212J/9214J/921DJ/ 0.2 (Collector 921EJ/921MJ/921NJ/921TJ open) UNR9211J 0.5 UNR921FJ/921KJ 1.0 UNR9219J 1.5 UNR9218J/921CJ/921LJ/921VJ 2.0 Forward UNR921VJ h V = 10 V, I = 5 mA 6 20  FE CE C current UNR9218J/921KJ/921LJ 20 transfer UNR9219J/921DJ/921FJ 30 ratio UNR9211J 35 UNR9212J/921EJ 60 UNR9213J/9214J/921AJ/ 80 921CJ/921MJ UNR921NJ/921TJ 80 400 UNR9210J/9215J/9216J/ 160 460 9217J/921BJ Collector-emitter saturation voltage V I = 10 mA, I = 0.3 mA 0.25 V CE(sat) C B Output voltage high-level V V = 5 V, V = 0.5 V, R = 1 kΩ 4.9 V OH CC B L Output voltage low-level V V = 5 V, V = 2.5 V, R = 1 kΩ 0.2 V OL CC B L UNR9213J/921BJ/921KJ V = 5 V, V = 3.5 V, R = 1 kΩ CC B L UNR921DJ V = 5 V, V = 10 V, R = 1 kΩ CC B L UNR921EJ V = 5 V, V = 6 V, R = 1 kΩ CC B L UNR921AJ V = 5 V, V = 5 V, R = 1 kΩ CC B L Transition frequency f V = 10 V, I = −2 mA, f = 200 MHz 150 MHz T CB E Input UNR9218J R −30% 0.51 +30% kΩ 1 resistance UNR9219J 1 UNR921MJ/921VJ 2.2 UNR9216J/921FJ/921LJ/921NJ 4.7 UNR9211J/9214J/9215J/921KJ 10 UNR9212J/9217J/921TJ 22 UNR9210J/9213J/921DJ/921EJ 47 UNR921AJ/921BJ 100 2 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series ■ Electrical Characteristics (continued) T = 25°C ± 3°C a Parameter Symbol Conditions Min Typ Max Unit Emitter-base resistance UNR921CJ R −30% 47 +30% kΩ 2 Rasistance UNR921MJ R/R 0.047  1 2 ratio UNR921NJ 0.1 UNR9218J/9219J 0.08 0.10 0.12 UNR9214J 0.17 0.21 0.25 UNR921TJ 0.47 UNR921FJ 0.37 0.47 0.57 UNR921AJ/921VJ 1.0 UNR9211J/9212J/9213J/921LJ 0.8 1.0 1.2 UNR921KJ 1.70 2.13 2.60 UNR921EJ 1.70 2.14 2.60 UNR921DJ 3.7 4.7 5.7 Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart P  T T a 150 )W 125 m (P T 100 n o ati dissip 75 er w 50 o p al ot T 25 0 0 40 80 120 160 Ambient temperature T (°C) a Characteristics charts of UNR9210J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 6543200000 IB = 01..300 .mm9 0AmA.8A m0.A7 0m.6A0 .m5T0 aAm. 4=A 0m2.51A° mCA ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C TaI C= /7 I5B° =C 10 ward current transfer ratio hFE123400000000 Ta = −2V7525C°5°EC°C =C 10 V 10 or-e For ect −25°C oll 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 3

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V ollector output capacitancebase, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 Cn mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9211J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC1142860000 0.08I. B9m =mA 1A.0 mA 0T.0a7 .0 =6m.000 5m2...A 2345mA °mmmCAAAA ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C ITCa / = I B7 5=° 1C0 ward current transfer ratio hFE123400000000 TV−a2C 25=E5 ° =7°C C51°0C V or-e −25˚C For ct 0.1 mA olle 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 TVaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR9212J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC1142860000 IB =0 1.9.0 m0 m.A8A mA Ta0 =.700000 2 .....m623455 °mAmmmmCAAAAA ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C ICT /a I=B 7=5 °1C0 ward current transfer ratio hFE123400000000 TV−2aC 25=E5° =7C°C5 1°0C V or-e −25°C For ct 0.1 mA olle 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9213J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC1142860000 IB = 1.0 mA 0T0.9a. 08 =m. 00000 7m2A..... 543625mA °mmmmmACAAAAA ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C ICT /a I=B 7=5 1°C0 ward current transfer ratio hFE123400000000 VCTEa−2 ==52 °517C°05C °VC 0.1 mA ctor-e −25°C For e oll 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C SJH00039BED 5

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 TVaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9214J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC1142860000 IB = 1.0 mAT0a 0.=0900000. 8. .....27m62345 5m mAmmmmm°ACAAAAAA ()mitter saturation voltage V VCE(sat)1011 0−1022 25°C ITC a/ =IB 7 =5 °1C0 ward current transfer ratio hFE123400000000 VCTEa−2 ==52 °5 17C°05C °VC or-e For 0.1 mA ect −25°C oll 0 C10 −1 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C C  V I  V V  I ob CB O IN IN O () pFCob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitance n base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 100 −1 1 10 102 10.4 0.6 0.8 1.0 1.2 1.4 10 −120 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR9215J I  V V  I h  I C CE CE(sat) C FE C 160 0.0I8B. 9 m= m A1A.0 mA Ta = 25°C () VCE(sat) 102 IC / IB = 10 hFE400 VCE = 10 V ()Collector current I mAC1428000 000000.7.....45623 m mmmmmAAAAAA mitter saturation voltage V101 −101 25°C Ta = 75°C ward current transfer ratio 123000000 T−25a2 °5=C° 7C5°C 0.1 mA or-e For ect −25°C oll 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9216J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC1142860000 IB = 1.0 mAT0a0.9 0.=000008 .m 7..... 225634m A5m mmmmmA°CAAAAAA ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C TICa /= I B7 5=° C10 ward current transfer ratio hFE123400000000 −T2V25aC 5°=EC° C=75 1°0C V or-e For 0.1 mA ollect −25°C 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 7

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O ()C pFob 65 ITf E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9217J I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC112086400000 IB =1 0.0.9 m 0m.A8A m0.7A m0.6A m0A.5T m00a0 ...A=342 2mmm5°AAAC ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C TIaC =/ I7B5 =°C 10 ward current transfer ratio hFE123400000000 −T2V25aC 5°=EC° C7=5 1°0C V 20 0.1 mA or-e For 0 Collect10 −2 −25°C 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 100 −1 1 10 102 10.4 0.6 0.8 1.0 1.2 1.4 10 1−20 − −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR9218J I  V V  I h  I C CE CE(sat) C FE C 240 102 160 200 Ta = 25°C () VCE(sat) IC / IB = 10 hFE VCE = 10 V ()Collector current I mAC 11628000 IB = 1.00 m.9 A0m.8A 0m.7A000 ...m456 AmmmAAA mitter saturation voltage V 101 −101 25°C Ta = 75°C ward current transfer ratio 1482000 T−a2 25=5° 7C°5C°C 40 0.3 mA or-e For 0.2 mA ct e 0 0.1 mA Coll 10 −2 −25°C 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 100 −1 1 10 102 10.4 0.6 0.8 1.0 1.2 1.4 10 −120 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR9219J I  V V  I h  I C CE CE(sat) C FE C 240 102 160 ()Collector current I mAC 21106280000 IB = 1.00 .m9 Am0A.8 0m.7A m0.A6 mTaA =000 2...4535 °mmmCAAA ()mitter saturation voltage V VCE(sat)101 −101 25°C ITCa / = I B7 =5° 1C0 ward current transfer ratio hFE1482000 −2TV25aC 5°=EC° C=75 1°0C V 40 0.2 mA ctor-e For e 0.1 mA oll −25°C 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C SJH00039BED 9

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O 6 104 102 ()C pFob 5 fIT E=a = =1 0 2M5°HCz VTaO = = 2 55 °VC VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921AJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 1284000 IB = 0.5 mA Ta 0000=.... 32412 5mmmm°CAAAA ()or-emitter saturation voltage V VCE(sat)10 −11 I−C2 /5 I°2BC 5=° C10 Ta = 75°C Forward current transfer ratio hFE123400000000 VCE = 10 V Ta =− 227555°°°CCC ct e oll 0 C10 −2 0 0 2 4 6 8 10 10 −1 1 10 102 10 −1 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 10 Tf =a =1 2M5°HCz 10 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) ()Output current I mAO10 −11 ()Input voltage V VIN 10 o m m o C ( 1 10 −2 1 0 10 20 0 1 2 3 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR921BJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 112468000000 IBT =a 000=0.... 32452 5mmmm°CAAAA ()mitter saturation voltage V VCE(sat)101 −011 IC2 /5 I°BC = 10 Ta = 75°C ward current transfer ratio hFE234000000 Ta =− 227555°°°CCC VCE = 10 V 20 0.1 mA or-e For 100 ct −25°C e oll 0 C10 −2 0 0 2 4 6 8 10 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C C  V I  V V  I ob CB O IN IN O ()C pFob 10 Tf =a =1 2M5°HCz 10 VTaO = = 2 55 °VC 102 VTaO = = 205.2°C V Collector output capacitancen base, input open circuited) ()Output current I mAO 1 ()Input voltage V VIN 110 o m m o C ( 1 10 −1 10 −1 0 10 20 30 40 0.4 0.8 1.2 1.6 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921CJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 1284000 IB = 1.0 mA Ta =000000000 .........23245678915 mmmmmmmmm°CAAAAAAAAA ()or-emitter saturation voltage V VCE(sat)10 −11 25°C −25°TCa = 75°ICC / IB = 10 Forward current transfer ratio hFE123000000 Ta = 75°C 2−V52C°5EC° =C 10 V ct e oll 00 2 4 6 8 10 C10 −21 10 102 01 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 11

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O ()C pFob 102 fT =a =1 2M5°HCz 102 VTaO = = 2 55 °VC 10 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 10 ()Output current I mAO 110 ()Input voltage V VIN 1 o m m o C ( 1 10 −1 10 −1 0 10 20 30 40 0 0.4 0.8 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921DJ I  V V  I h  I C CE CE(sat) C FE C 30 102 160 ()Collector current I mAC 22115050 IB = 1.0 mA0.60 .m70 Am.8A m0.A9 mA0.50 mT.4aA m=000. 3A2..21 5m °mmCAAA ()mitter saturation voltage V VCE(sat)101 −101 25°C TIaC =/ I7B5 =°C 10 ward current transfer ratio hFE1482000 VCE = 10 V −T22a 55=°° CC75°C 5 ctor-e −25°C For e oll 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 100 −1 1 10 102 11.5 2.0 2.5 3.0 3.5 4.0 10 −120 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR921EJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 6543200000 0.08. 9m mAIBA = 1.0 0m0.5.6A 0m m.04AA. 7m0 .m3A AmAT0a0 .=1.2 2m 5mA°AC ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C TIaC = / 7IB5 °=C 10 ward current transfer ratio hFE1148260000 2−TV52aC °5=EC° =C7 51°0C V 10 or-e For ct olle −25°C 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fTI E=a = =1 0M25H°Cz 104 VTaO = = 2 55 °VC 102 TVaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 100 −1 1 10 102 11.5 2.0 2.5 3.0 3.5 4.0 10 −120 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921FJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC2211406284000000 IB = 1.0 mA 0.6 m0.A7 0m.T8A am =0000A ....295345 mmmm°CAAAA ()or-emitter saturation voltage V VCE(sat)1011 0−1012 25°C ITCa /= I B7 5=° 1C0 Forward current transfer ratio hFE1148260000 2−TV52aC °5=EC° =C7 51°0C V 00..12 mmAA ollect −25°C 0 C10 −2 0 0 2 4 6 8 10 12 10 −1 1 10 102 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 13

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO == 205.2°C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921KJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 22114062800000 ITB a= = 0011 2....68025 °mmmmCAAAA ()mitter saturation voltage V VCE(sat)1011 0−1012 25°C Ta = 75°C IC / IB = 10 ward current transfer ratio hFE22114062800000 25T°aC = 75°−C25°C VCE = 10 V 40 0.4 mA or-e −25°C For 40 ct 0.2 mA olle 0 C10 −2 0 0 2 4 6 8 10 12 1 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V V  I ob CB IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 10 −2 1 10 102 10 −1 1 10 102 Collector-base voltage VCB (V) Output current IO (mA) 14 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR921LJ I  V V  I h  I C CE CE(sat) C FE C 240 102 240 200 Ta = 25°C () VCE(sat) IC / IB = 10 hFE200 VCE = 10 V ()Collector current I mAC 11628000 IB = 0001....4680 mmmmAAAA mitter saturation voltage V101 −101 2T5a° C= 75°C ward current transfer ratio 11628000 2T5°aC = 75°C−25°C 40 0.2 mA ector-e −25°C For 40 oll 0 C10 −2 0 0 2 4 6 8 10 12 1 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V V  I ob CB IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 10 −2 1 10 102 10 −1 1 10 102 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR921MJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC22114062800000 IB = 1.00. 9m0 mA.8A0 m.7A 0m.6AT ma =A0000 ....223455 mmmm°CAAAA ()mitter saturation voltage V VCE(sat)11001 −−0121 −25˚2C5°CTa = 75°CIC / IB = 10 ward current transfer ratio hFE235400000000 T2−V5a2C °5=EC° =7C5 1°0C V 40 0.1 mA or-e For 100 ct e oll 0 C10 −3 0 0 2 4 6 8 10 12 1 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 15

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O ()C pFob 54 fIT E=a = =1 0 2M5°HCz 104 TVaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 321 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 o m m o C ( 0 1 10 −2 10 −1 1 10 102 0.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921NJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC 1142860000 ITB a= = 1 2.0000000005........24876953 °m CmmmmmmmmAAAAAAAAA ()mitter saturation voltage V VCE(sat)101 −101 25°CTa = 75°C IC / IB = 10 ward current transfer ratio hFE443218024600000 25°C Ta =− 2755°°CC VCE = 10 V 0.1 mA or-e For 80 ect −25°C oll 0 C10 −2 0 0 2 4 6 8 10 12 1 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) C  V I  V V  I ob CB O IN IN O ()C pFob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 01 10 102 10.4 0.6 0.8 1.0 1.2 1.4 10 −120 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 16 SJH00039BED

Transistors with built-in Resistor UNR921xJ Series Characteristics charts of UNR921TJ I  V V  I h  I C CE CE(sat) C FE C ()Collector current I mAC1142860000 0.5 m0A.6 m0A.7 m0.A8 mA0.9 mAIBT =a000 =1...324 .20 mmm5 m°AAACA ()mitter saturation voltage V mVCE(sat) 110023 IC / IB = 1025°CTa = 75−°2C5°C ward current transfer ratio hFE143200000000 2T5a° =C 75°CV−C2E 5=° C10 V 0.1 mA or-e For ct e oll 0 C 10 0 0 2 4 6 8 10 1 10 102 10 −1 1 10 102 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C C  V I  V V  I ob CB O IN IN O ()C pFob 4 102 TVaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitanceon base, input open circuited) 321 ()Output current I mAO11001 −−1012 ()Input voltage V VIN 110 m m o C ( 0 10 −3 10 −1 1 10 102 0.25 0.75 1.25 10 −3 10 −2 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR921VJ I  V V  I h  I C CE CE(sat) C FE C 160 10 240 ()Collector current I mAC 1428000 ITB a= = 1 2.0000005.....56789 °m CmmmmmAAAAAA ()mitter saturation voltage V VCE(sat)10 −11 25T°Ca = 75°C IC / IB = 10 ward current transfer ratio hFE21106280000 2T5a° =C 75°C VCE = 10 V 0.4 mA or-e −25°C For 40 −25°C ct 0 00..23 mmAA Colle10 −2 0 0 2 4 6 8 10 12 1 10 102 103 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00039BED 17

UNR921xJ Series Transistors with built-in Resistor C  V I  V V  I ob CB O IN IN O () pFCob 65 fIT E=a = =1 0 2M5°HCz 104 VTaO = = 2 55 °VC 102 VTaO = = 2 05.°2C V Collector output capacitancen base, input open circuited) 432 µ()Output current I AO 11100023 ()Input voltage V VIN101 −101 mo 1 m o C ( 0 10 −2 1 10 102 10.4 0.6 0.8 1.0 1.2 1.4 10 −1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 18 SJH00039BED

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