This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR52AFG Silicon NPN epitaxial planar type For digital circuits  Features / Package  Costs can be reduced through downsizing of the equipment and reduction of e  Code the number of parts. SMini3-F2  SMini type package allowing easy automatic insertion through tape paccking  Pin Name 1:d Base n 2: Emitter  Absolute Maximum Ratings T = 25°C e 3: Collector a e. a g Parameter Symbol Rating Unit a u  Marking Symboslt: KD Collector-base voltage (Emitter open) VCBO 50 V e n cl Collector-emitter voltage (Base open) V 50 V y CEO n  Internal eCconnection Collector current eIC 80 mA ct lif Total power dissipation PT 150 imW du R1 (4.7 kΩ) C t t o B JSutonrcatigoen t etemmppeeraratuturere n TTstjg –55n 1to5 0+150 °°CC ur Pr (1 0R k2Ω) E o i o g f pe n. n y o CC ooElllleelecccttootrrr--ibecMmaaslie tC tveProh lvaatoaarrgalateamc g(teEeeD tm(reBirsiitattsiecers oo pp Teesnna ))= 25c°DiCs±cS3oVV°yCmnCCtBEibOOnolueIIdCC i ==pnl 12cal0 m numAedA,de , pI lsIBE m amf= C=ana oii0 lo0lennntotdd eeiwtdindiinoiasansncsnccocoenen t ttitgi ynnpuUueeeRddL ttoayynb.ppopeeuadMt55 n00ilnaatseosnti Tic.yncpfoo.rjpm/aMetina/x UVVnit Collector-base cutoff current (Emitter ocpee/n) ICBO VCB = 50 V, IE = 0 win mic 0.1 mA CEmoliltetcetro-br-aesme ictutetro fcfu ctoufrfr ecnutr r(Cennottl el (eBnctaaosrne o oppeenn)) IICEBEOO VVCEBE == 560 V V, I, CI B= = 0s i0t followw.se 01..50 mmAA Forward current transfer rMaatiio hFE VCE = 10 Vs,e I Cv i= 5 mp:A//w 30  Collector-emitter saturation voltage VCE(sat) IC = 10e maA, IB =h t0t.3 mA 0.25 V Output voltage high-level V V P=l 5 V, V = 0.5 V, R = 1 kW 4.9 V OH CC B L Output voltage low-level V V = 5 V, V = 2.5 V, R = 1 kW 0.2 V OL CC B L Input resistance R –30% 4.7 +30% kW 1 Resistance ratio R / R 0.37 0.47 0.57  1 2 Transition frequency f V = 10 V, I = –2 mA, f = 200 MHz 150 MHz T CB E Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2008 SJH00293AED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UNR52AFG UNR52AFG_P -T UNR52AFG_I -V UNR52AFG_V -I T a C CE CE(sat) C P  T I  V V  I T a C CE CE(sat) C 240 V) 10 W) 80 IB = 500 µA400 µA Ta = 25°C (CE(sat) IC / IB = 10 m V P (T160 mA) 300 µA age 1 Total power dissipation 80 Collector current I (C 40 ce/120000 µµAA dctor-emitter saturation volt 10−1 Ta = 8−52°5C°C 25°C e 0 0 n Coll 10−2 0 40 80 120 160 0 4 8 e12 1 10 102 Ambient temperature Ta (°C) aCollector-emitter voltage VCE (V) Collectorg ceu.rrent IC (mA) a UNR52AFG_hFE-IC UNR52AFG_Cobu-VCB e UstNR52AFG_IO-VIN hFE  IC n Cob  VCB cl IO  VIN y 300 F) n 10ec Forward current transfer ratio hFE1200000M1VCEC =o l1laU0e cVNtiToRarV 5 =Dc2I uN8A1r5 ir0F°eCGn−n 2t_I 5O VI°CCItN s -(ImO2A5)°CecD1i0s2coCollector output capacitanceonti (Common base, input open circuited) C (pnobue0241nd iCpnoltlcalleincuteodrde- pblsa mamfseanao1i ilv0lenontotdlt eaewgdindineina sas fTV gnc=anc C fc=oc1oB oe2nMe n t5 tut(it°giHVrC yn yzn1)pu0UpuP2reeeeRoddL dttoauyyOutput current I (mA)ncb.Oppt opeel111iua000dft−−−1 n312l0aatseosntiI nicp.nucft ovo.0roj.8ltpma/gaeeti n /VoInN.VT aO( V= 1= .)2 655 °VC 102 VO =c 0e/.2 V win mic Tan = 25°C o e V (V)IN 10 Maintena se visit fp:o/l/lwww.s ge ea htt olta Pl v ut 1 p n I 10−1 10−1 1 10 102 Output current I (mA) O 2 SJH00293AED

This product complies with the RoHS Directive (EU 2002/95/EC). UNR52AFG SMini3-F2 Unit:mm / e 2.00±0.20 c 0 0.30+−00..0025 0.05±d n 5 2 4 e0. e. a g 3 a u st e n cl y 0.10 0.10 n ec e 1.25± i2.10± uct lif d t t )° o 5 r 1 n 2 n (ur P o i(0.65) (0.65) o ng f ype 0.13+−00..0025 on. M a(5D°)is1n.3c0e/±c0D.1i0scontinued i(0.89)pnlcalnued0.900.10±de pls mamfanaoiillenntotd eewdindiniasasoncncwcocioenenn t ttitgi ynnepuUueemeRiddLc ttoayynb.ppopeeuadt nlaatseosnti ic.ncfoo.rj(0.49)pm/aetin/ aintena 0.10 visit follwww.s M 0to se p:// ea htt Pl SJH00293AED 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl