This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR51A3G Silicon PNP epitaxial planar type For digital circuits  Features / Package  Costs can be reduced through downsizing of the equipment and reduction of e  Code the number of parts. SMini3-F2  SMini type package allowing easy automatic insertion through tape paccking  Pin Name 1: dBase n 2: Emitter  Absolute Maximum Ratings Ta = 25°C e 3: Collector e. a g Parameter Symbol Rating Unit a u  Marking Symboslt: CH Collector-base voltage (Emitter open) VCBO –50 V e n cl Collector-emitter voltage (Base open) V –50 V y CEO n  Internal eCconnection Collector current eIC –80 mA ct lif Total power dissipation P 150 imW u R (47 kΩ) T d 1 C t t o B JSutonrcatigoen t etemmppeeraratuturere n TTstjg –55n 1to5 0+150 °°CC ur Pr (4 7R k2Ω) E o i o g f pe n. n y o CCC oooElllllleeeleccctcttoootrrrr---ibbecMmaaassliee t C tcveuProh tlvaoatoaafrrfgala tecamc ug(terEeeDr tme(reBinrsiitta tt(siecEers moo pp iTteestnnea r))= o p2e5nc°D)iCs±cS3oVV°yICCmnCCtBBEibOOOnolueIIVdCC Ci ==Bpnl --=cal12 -n0 um5 edm0AdAe V p,ls ,,I m IBamfIECE ana= oi =ilo=l en0 nn 0t0otdd eeiwtdindiinoiasansncsnccocoenen t ttitgi ynnpuUueeeRddL ttoayynb.ppopeeuadM--t55 niln00aatseosnti Tic.yncpfoo.rjpm/-aMet i0na/.x1 UmVVnAit Collector-emitter cutoff current (Base coep/en) ICEO VCE = -50 V, IB = 0 win mic - 0.5 mA n o e EFomrwittaerrd-b causrer ecnutt otrfaf ncsufrerre rnatt (iCon otlelenctaor open) IhEFBEO VVECBE == --61 0V V, I, CI C= s= i0t - f5o lmlAww.s 80 - 0.1 mA ai vi w Collector-emitter saturatioMn voltage VCE(sat) IC = -10 msAe , IB = -p :0//.3 mA - 0.25 V Output voltage high-level VOH VCC = -e5a V, VB h=tt - 0.5 V, RL = 1 kW -4.9 V Pl Output voltage low-level V V = -5 V, V = -3.5 V, R = 1 kW - 0.2 V OL CC B L Input resistance R -30% 47 +30% kW 1 Resistance ratio R / R 0.8 1 1.2  1 2 Transition frequency f V = -10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2008 SJH00265AED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UNR51A3G UNR51A3G_PT-Ta UNR51A3G_IC-VCE UNR51A3G_VCE(sat)-IC P  T I  V V  I T a C CE CE(sat) C W) 200 −80 Ta = 25°C IB = −1−09 mmAA −8 mA−−67 mmAA (V)CE(sat) 10 IC / IB = 10 m V P (T150 mA)−60 −5 mA age 1 Total power dissipation 15000 Collector current I (C−−4200 ce/−−−−3214 mmmmAAAA or-emitter saturation volt 10−1 2T5°aC = 85°C −25°C dct e 0 0 n Coll 10−2 0 40 80 120 160 0 −4 −8 e−12 −1 −10 −102 e. Ambient temperature Ta (°C) aCollector-emitter voltage VCE (V) Collectorg current IC (mA) a UNR51A3G_hFE-IC UNR51A3G_Cobu-VCB e UsNtR51A3G_IO-VIN hFE  IC n Cob  VCB cl IO  VIN y Forward current transfer ratio hFE1200000−M1 CollaUecNTtiaoR =rV5 Dc81Iu5NA−°r i1Cr3e0G−nn _22tI 55VO I°°ICCCtVN s- C(IEmO =A −)10ec D−Vi1s02coonCollector output capacitanceti (Common base, input open circuited) C (pF)nobue024−nd1 iCpnlotclalleinuctedorde- pblsa mamfsnea−naoi il1vle0nontotdlt eaewgdindinienas as fTVgnc nc =a fcCo =co1B oe n2en M t 5tuti(tgi°HVr yCn y−nz)1puUpuP0ree2eeRoddL dttoauyOutput current I (mA)ynOcb.ppt−−− ope111el−i000uad−f1t−−−01 n312el0acatseosnItin icp.uncft −voo. or0jl.t8pam/gaeet in V/oInNVT. a O (= −V= 12 )−.565° CV 102 VTO = = 2 −5c °0eC./2 V win mic a n o e V (V)IN 10 Maintena se visit fp:o/l/lwww.s ge ea htt olta Pl v ut 1 p n I 10−1 10−1 1 10 102 Output current I (mA) O 2 SJH00265AED

This product complies with the RoHS Directive (EU 2002/95/EC). UNR51A3G SMini3-F2 Unit:mm / e 2.00±0.20 c 0 0.30+−00..0025 d0.05± n 5 2 4 e0. e. a g 3 a u st e n cl y 0.10 0.10 n ec e 1.25±i2.10± uct lif d t t )° o 5 r 1 n 2 n (ur P o i(0.65) (0.65o) ng f ype 0.13+−00..0025 on. M aD(5i°) snc1.e3/0cD±i0s.10continued ipnl(0.89)calnuedde p0.900.10l±s mamfanaoiillenntotd eewdindiniasasoncncwcocioenenn t ttitgi ynnepuUueemeRiddLc ttoayynb.ppopeeuadt nlaatseosnti ic.ncfoo.rjpm/(0.49)aetin/ aintena 0.10 visit follwww.s M 0to se p:// ea htt Pl SJH00265AED 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl