This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR32A5 Silicon NPN epitaxial planar type Unit: mm For digital circuits /0.33+–00..0025 0.10+–00..0025 e 3 ■••SCFuoeintaatrbtilbueu rfetoers thoi glohw-d epnoswitye rm coounnstuinmgp atniodn downsizing of tnhe equicpment 0.23+–00..0025 d(0.140)(0.240) 0.80min.±0.05 1.20±0.05 °5 0.15 min. ■ Absolute Maximum Ratings Ta = 25°aC e5° 10..2800±±00..0055 0.15 age. Parameter Symbol Rating Unit u e 2±0.03st Collector-base voltage (Emitter open) Vn 50 V cl0.5 CBO y1 CCoolllleeccttoorr- ceumrirtetnert voltage (Base opeen) VICCEO 5800 nmVA ct lifec0 to 0.0 1: Base 0.15 max. i u Total power dissipation t PT 1t00 mW od 23:: ECmoliltetcetror JSutonrcatgioen t etemmppeeraratutureren TTstjg −n55 1to2 5+125 °°CC ur Pr SSSMini3-F1 Package oMarking Symbol: HC i o g f pe n. ■CCooEMllllleeecccttootrrr--ibeacmaasiePlt tCaveDror halvtmaaoiglreteaat eg(cEert m(esBirtaitssecert ieooc/ppsceeD nni ))Tsac =oS nVVy2timCC5BEn°bOOCuole ±d IIi3CCp°n l==Cca l21n 0um edµAdAe ,p ls,I mIBamfEC a= naoi=iol l0e nn0ntotdd eietwdiindoininnasassncncwcocioenenn tI ttintgi yntynepuUurenemeRiaddLc l t toCayynob.BppnMope55en00iRuadnet1 ncl (at1aitso0 TneokyΩsnpti )ic.ncfMoo.rjaECpxm/aetin/oUVVnit CCEmoollillteetccettroo-brr--abesmaes icetu tceturo tfcofu fctfou acifrufr enrcrtnuetrn er(teC n(noEtal m(leBnictattoseerr ooopppeeennn))) IIICCEBBEOOO VVVCCEBEB === 6550 0V VV, ,I, CIvI iBE= s== i0t 00 followww.se 000...0151 mµµAAA Forward current Mtransfer ratio hFE VCE = 10s Ve , IC = 5p m://A 160 460  Collector-emitter saturation voltage VCE(sat) IC = 1e0 amA, IB h=t t0.3 mA 0.25 V Output voltage high-level V V Pl = 5 V, V = 0.5 V, R = 1 kΩ 4.9 V OH CC B L Output voltage low-level V V = 5 V, V = 2.5 V, R = 1 kΩ 0.2 V OL CC B L Input resistance R −30% 10 +30% kΩ 1 Transition frequency f V = 10 V, I = −2 mA, f = 200 MHz 150 MHz T CB E Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2003 SJH00057BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UNR32A5 P  T I  V V  I T a C CE CE(sat) C )W 112000 80 0.8 m 0A.9 mA IB = 1000.0...765 mmmmAAAA (V)CE(sat) 10 IC / IB = 10 (Total power dissipation P mT 86420000 Collector current I (mA)C 624000 ncTae = 200005....4321/° CmmmmAAAAeollector-emitter saturation voltage Vd0.11 25°C Ta = 85°C−e.25°C 0 0a C0.01 g 0 40 80 120 0 2 4 6 8 10 12 0.1 1 1a0 100 1 000 Ambient temperature Ta (°C) Collector-emitter voltage VuCE (V) Collecteo r csturrent IC (mA) n cl y n c e hFE  IC e Cob  VCB ct lif IO  VIN Forward current transfer ratio hFEM43211000000000001 CaollTieac =t−DVo 822r555 Ic°°°NiCCCu r1nrn0tene tI n OtICsa V VT(nCmaOE c= ==A 2 e 01)5/.0°2c C VDVi10s0coonCollector output capacitancet (pF)Ciob (Common base, input open circuited) nu1e100nd iCponltllcaelci1nuto0erd-bde aplss emamf v2ana0ooiislliletntant otgdf eee wo fTdinVld in3=ali 0nC =as1asoB 2gnMc nc5 (ww°fcHocVioCzoen)wenn t. t4utitgi0sr yn ynepuUpuPreemeeRiod()Output current I mAdLc dOttoauyy1n01b.pp100ope0euadt nlaaItsnpeousntti v ico1.ltnacfgooe. rj VpIm/NVT ae at(O iV= n= /2)2o 55 n°VC. ()ge V VIN 10 Mai Please vihttp://w a olt v put 1 n I 0.1 1 10 100 Output current I (mA) O 2 SJH00057BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl