This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR32A3G Silicon NPN epitaxial planar type For digital circuits / e ■ Features ■ Package •Suitable for high-density mounting and downsizing of the equicpment •Code •Contribute to low power consumption SSSMdini3-F2 n •Marking Symbol: FN •ePin Name ■ Absolute Maximum Ratings T = 25°aC 1: Base ge. a a Parameter Symbol Rating Unit u23:: ECmoliltetcetror e st Collector-base voltage (Emitter open) Vn 50 V cl CBO y CCoolllleeccttoorr- ceumrirtetnert voltage (Base opeen) VICCEO 5800inmVA ■ Internuaclt RClifo (e4n7cn keΩc)tion Total power dissipation t PT 1t00 mW od B 1 C JSutonrcatgioen t etemmppeeraratutureren TTstjg −n55 1to2 5+125 °°CC ur Pr (47R k2Ω) E o i o g f pe n. n y o ■CCooEMllllleeecccttootrrr--ibeacmaasiePlt tCaveDror halvtmaaoiglreteaat eg(cEert m(esBirtaitssecert ieooc/ppsceeD nni ))Tsac =oS nVVy2timCC5BEn°bOOCuole ±d IIi3CCp°n l==Cca l21n 0um edµAdAe ,p ls,I mIBamfEC a= naoi=iol l0e nn0ntotdd eietwdiindoininasassncncwcocioenenn t ttitgi ynnpuUueemeRiddLc ttoayynb.ppMope55e00iuadnt nlaatsTeoysnpti ic.ncfMoo.rjaxpm/aetin/UVVnit CCEmoollillteetccettroo-brr--abesmaes icetu tceturo tfcofu fctfou acifrufr enrcrtnuetrn er(teC n(noEtal m(leBnictattoseerr ooopppeeennn))) IIICCEBBEOOO VVVCCEBEB === 6550 0V VV, ,I, CIvI iBE= s== i0t 00 followww.se 000...115 mµµAAA Forward current Mtransfer ratio hFE VCE = 10s Ve , IC = 5p m://A 80  Collector-emitter saturation voltage VCE(sat) IC = 1e0 amA, IB h=t t0.3 mA 0.25 V Output voltage high-level V V Pl = 5 V, V = 0.5 V, R = 1 kΩ 4.9 V OH CC B L Output voltage low-level V V = 5 V, V = 3.5 V, R = 1 kΩ 0.2 V OL CC B L Input resistance R −30% 47 +30% kΩ 1 Resistance ratio R / R 0.8 1.0 1.2  1 2 Transition frequency f V = 10 V, I = −2 mA, f = 200 MHz 150 MHz T CB E Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: June 2007 SJH00181AED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UNR32A3G P  T I  V V  I T a C CE CE(sat) C ()Total power dissipation P mWT11208642000000 Collector current I (mA)C 86240000 0.8 m 0A.9 mnA cIB e= 10000000.0.......7654321/ m mmmmmmmAAAAAAAA or-emitter saturation voltage V (V)CE(sat)d01.011 25°C 85T°Ca = −25°C 00 Ambie4n0t tempera8t0ure Ta (1°2C0) 00aColle2ctor-e4mitter6 voltag8e T Vau =C1 E20 5 °(CV)12eCollect0.010.1 Collect1oe r csutrraengt e .I1C0 I(Cm / IAB )= 10100 n cl y n c e hFE  IC e Cob  VCB ct lif IO  VIN Forward current transfer ratio hFEM32100000001VCE Ca= o1l0lie VctDoVr IcNiu r1r0nTena t=I O82It−C55s2°° CC5(°mCcAe)/cD1i0s0coonCollector output capacitancet (pF)Ciob (Common base, input open circuited) nu1e100nd iCponltllcaelci1ntuo0erd-bde aplss emamf v2ana0ooiillletnantotgd eee w fTdinV din3=ai 0nC =as1asB 2gnMc nc5 (w°fcHoVcioCzoe)nenn t t4utitgi0r yn ynpuUpuPreemeeRiod()Output current I mAdLc O dttoau0yyn.001b.p.p1011op0eeuadt nlaaItsnpeoustn tiv oic1.ltnacfgoeo. r jVpImN/VT a ea(tO Vi= n= 2/)2 o55 °nVC. 100 ntenaVTnaO = = 2 05.°2C V sit followw.se ai vi w ()V VIN 10 M ease http:// ge Pl a olt v put 1 n I 0.1 0.1 1 10 100 Output current I (mA) O 2 SJH00181AED

This product complies with the RoHS Directive (EU 2002/95/EC). SSSMini3-F2 Unit: mm / e c d n e e. 1.20 ±0.05 a g 5 a 0.30+−00..0025 n 0.20 ±0.0u ycle st n c e 3 e ct lif i u d t t o r n 0n ±0.05 0 ±0.05 our P i o0.8 1.2 g f pe n. n y o M51° aD(0.i4)0.80 s±0.0(5c0.e4/2)cDiscontin0u.2e0d +−i00p..nl0025calnuedde pls mamfanaoiillenntotd eew5°dindiniasasncncwcocioenenn t ttitgi ynnpuUueemeRiddLc ttoayynb.ppopeeuadt nlaa0ts.eo1s3nti +−ic00.0.27)..n00cf25oo.rjpm/aetin/ n o e ( ntena 04 sit follww.s ai 5) ±0. vi w M (0. 0.51 ease http:// Pl 5 0 0. o 0 t

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