ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列 > UMX18NTN
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UMX18NTN产品简介:
ICGOO电子元器件商城为您提供UMX18NTN由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 UMX18NTN价格参考¥0.81-¥3.09。ROHM SemiconductorUMX18NTN封装/规格:晶体管 - 双极 (BJT) - 阵列, Bipolar (BJT) Transistor Array 2 NPN (Dual) 12V 500mA 320MHz 150mW Surface Mount UMT6。您可以下载UMX18NTN参考资料、Datasheet数据手册功能说明书,资料中有UMX18NTN 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS DUAL NPN 12V 500MA 6UMT两极晶体管 - BJT DUAL NPN 12V 500MA |
产品分类 | 晶体管(BJT) - 阵列分离式半导体 |
品牌 | ROHM Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,ROHM Semiconductor UMX18NTN- |
数据手册 | |
产品型号 | UMX18NTN |
不同 Ib、Ic时的 Vce饱和值(最大值) | 250mV @ 10mA,200mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 270 @ 10mA,2V |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | UMT6 |
其它名称 | UMX18NTN-ND |
功率-最大值 | 150mW |
包装 | 带卷 (TR) |
发射极-基极电压VEBO | 6 V |
商标 | ROHM Semiconductor |
增益带宽产品fT | 320 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 6-TSSOP,SC-88,SOT-363 |
封装/箱体 | UM-6 |
工厂包装数量 | 3000 |
晶体管极性 | NPN |
晶体管类型 | 2 NPN(双) |
最大功率耗散 | 150 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 1 A |
最小工作温度 | - 55 C |
标准包装 | 3,000 |
电压-集射极击穿(最大值) | 12V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | - |
直流电流增益hFE最大值 | 270 at 10 mA at 2 V |
直流集电极/BaseGainhfeMin | 270 |
配置 | Dual |
集电极—发射极最大电压VCEO | 12 V |
集电极—基极电压VCBO | 15 V |
集电极连续电流 | 500 mA |
频率-跃迁 | 320MHz |
EMX18 / UMX18N General purpose transistors (dual transistors) Datasheet llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 12V CEO I 500mA C EMX18 UMX18N (EMT6) (UMT6) llFeatures llInner circuit 1)Two 2SC5585 chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX18 1616 T2R 180 8 8000 X18 (EMT6) SOT-363 UMX18N 2021 TN 180 8 3000 X18 (UMT6) www.rohm.com 1/7 20150910 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
EMX18 / UMX18N Datasheet llAbsolute maximum ratings (T = 25°C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit Collector-base voltage V 15 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current I *1 1.0 A CP Power dissipation EMX18 150 P *2 *3 mW D UMX18N 150 Junction temperature T 150 ℃ j Range of storage temperature T -55 to +150 ℃ stg llElectrical characteristics (T = 25°C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10μA 15 - - V voltage CBO C Collector-emitter breakdown BV I = 1mA 12 - - V voltage CEO C Emitter-base breakdown voltage BV I = 10μA 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B DC current gain h V = 2V, I = 10mA 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, Output capacitance C CB E - 7.5 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/7 20150910 - Rev.001
EMX18 / UMX18N Datasheet llElectrical characteristic curves (T = 25°C) a <For Tr1 and Tr2 in common> Fig.1 Grounded emitter propagation Fig.2 Typical output characteristics characteristics Fig.3 DC current gain vs. collector current (I) Fig.4 DC current gain vs. collector current (II) www.rohm.com 3/7 20150910 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
EMX18 / UMX18N Datasheet llElectrical characteristic curves (T = 25°C) a <For Tr1 and Tr2 in common> Fig.5 Collector-emitter saturation voltage vs. Fig.6 Collector-emitter saturation voltage vs. collector current (I) collector current (II) Fig.7 Base-emitter saturation voltage vs. Fig.8 Gain bandwidth product vs. collector current emitter current www.rohm.com 4/7 20150910 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
EMX18 / UMX18N Datasheet llElectrical characteristic curves (T =25°C) a <For Tr1 and Tr2 in common> Fig.9 Collector output capacitance vs. Fig.10 Safe Operating Area collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Safe Operating Area www.rohm.com 5/7 20150910 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
EMX18 / UMX18N Datasheet llDimensions www.rohm.com 6/7 20150910 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
EMX18 / UMX18N Datasheet llDimensions www.rohm.com 7/7 20150910 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
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