EMD6 / UMD6N / IMD6A NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet <For DTr1(NPN)> Outline Parameter Value EMT6 UMT6 (6) (6) V 50V (5) (5) CEO (4) (4) I 100mA (1) (1) C (2) (2) (3) (3) R 4.7k 1 EMD6 UMD6N (SC-107C) SOT-363 (SC-88) <For DTr2(PNP)> SMT6 (4) (5) Parameter Value (6) V 50V (3) CEO (2) (1) I 100mA C IMD6A R 4.7k SOT-457 (SC-74) 1 Features Inner circuit 1) Both the DTC143T chip and DTA143T chip Collector Base Emitter (6) (5) (4) in one package. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external DTr1 DTr2 input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing (1) (2) (3) Emitter Base Collector of the input. They also have the advantage of EMD6 / UMD6N completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for Collector Base Emitter operation, making the circuit design easy. (4) (5) (6) 5) Lead Free/RoHS Compliant. DTr2 DTr1 Application Inverter circuit, Interface circuit, Driver circuit (3) (2) (1) Emitter Base Collector IMD6A Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) EMD6 EMT6 1616 T2R 180 8 8,000 D6 UMD6N UMT6 2021 TR 180 8 3,000 D6 IMD6A SMT6 2928 T108 180 8 3,000 D6 www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/7 2014.12 - Rev.C

EMD6 / UMD6N / IMD6A Data Sheet Absolute maximum ratings (Ta = 25C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Collector-base voltage V 50 50 V CBO Collector-emitter voltage V 50 50 V CEO Emitter-base voltage V 5 5 V EBO Collector current I 100 100 mA C EMD6 / UMD6N 150 (Total)*3 mW Collector Power dissipation P *2 IMD6A C 300 (Total)*4 mW Junction temperature T 150 °C j Range of storage temperature T 55 to 150 °C stg Electrical characteristics(Ta = 25°C) <For DTr1(NPN)> Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50A 50 - - CBO C Collector-emitter breakdown voltage BV I = 1mA 50 - - V CEO C Emitter-base breakdown voltage BV I = 50A 5 - - EBO E Collector cut-off current I V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I / I = 5mA / 0.25mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 1mA 100 300 600 - FE CE C Input resistance R - 3.29 4.7 6.11 - 1 V = 10V, I = 5mA Transition frequency f *1 CE E - 250 - MHz T f = 100MHz Electrical characteristics(Ta = 25°C) <For DTr2(PNP)> Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50A 50 - - CBO C Collector-emitter breakdown voltage BV I = 1mA 50 - - V CEO C Emitter-base breakdown voltage BV I = 50A 5 - - EBO E Collector cut-off current I V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I / I = 5mA / 0.25mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 1mA 100 300 600 - FE CE C Input resistance R - 3.29 4.7 6.11 - 1 V = 10V, I = 5mA Transition frequency f *1 CE E - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/7 2014.12 - Rev.C

EMD6 / UMD6N / IMD6A Data Sheet Electrical characteristic curves(Ta = 25°C) <For DTr1(NPN)> Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output characteristics characteristics I = 500μA B 10 100 Ta=25ºC 450μA V =5V CE A] A] 400μA m m 80 350μA [ 1 [ C C T : I T : I 300μA N N 60 250μA E E RR 0.1 Ta=100ºC RR 200μA U U C 25ºC C 40 150μA R 40ºC R O O T 0.01 T 100μA C C 20 E E L L 50μA L L O O C C 0.001 0 0A 0 0.5 1 1.5 2 0 5 10 COLLECTOR TO EMITTER BASE TO EMITTER VOLTAGE : V [V] BE VOLTAGE : V [V] CE Fig.3 DC Current gain Fig.4 Collector-emitter saturation voltage vs. Collector Current vs. Collector Current N E O N : hF RATI[V]at) AI U E(s G T C ENT R SAE : V R OG R TA U CLT C EO C LLV D O C COLLECTOR CURRENT : I [A] COLLECTOR CURRENT : I [A] C C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/7 2014.12 - Rev.C

EMD6 / UMD6N / IMD6A Data Sheet Electrical characteristic curves(Ta = 25°C) <For DTr2(PNP)> Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output characteristics characteristics -10 -100 IB= V = 5V Ta=25ºC 500μA CE 450μA A] A] m m -80 400μA [ -1 [ C C 350μA T : I T : I 300μA N N -60 E E 250μA RR -0.1 Ta=100ºC RR U 25ºC U 200μA C C -40 R 40ºC R 150μA O O T-0.01 T C C 100μA -20 E E L L L L 50μA O O C C -0.001 0 0A 0 -0.5 -1 -1.5 -2 0 -2 -4 -6 -8 -10 COLLECTOR TO EMITTER BASE TO EMITTER VOLTAGE : V [V] BE VOLTAGE : V [V] CE Fig.3 DC Current gain Fig.4 Collector-emitter saturation voltage vs. Collector Current vs. Collector Current N N : hFE RATIO[V]at) AI U E(s G T C ENT R SAE : V R OG R TA U CLT C EO C LLV D O C COLLECTOR CURRENT : I [A] COLLECTOR CURRENT : I [A] C C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 4/7 2014.12 - Rev.C

EMD6 / UMD6N / IMD6A Data Sheet Dimensions (Unit : mm) D A b EMT6 x S A c L p L E HE p L L e 1 e A y S 1 l1 A S b2 e Patternof terminal position areas [Not a recommended pattern of soldering pads] MILIMETERS INCHES DIM MIN MAX MIN MAX A 0.45 0.55 0.018 0.022 A1 0.00 0.10 0.000 0.004 b 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.059 0.067 E 1.10 1.30 0.043 0.051 e 0.50 0.020 HE 1.50 1.70 0.059 0.067 L 0.10 0.30 0.004 0.012 Lp - 0.35 - 0.014 x - 0.10 - 0.004 y - 0.10 - 0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2 - 0.37 - 0.015 e1 1.25 0.049 l1 - 0.45 - 0.018 Dimension in mm / inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 5/7 2014.12 - Rev.C

EMD6 / UMD6N / IMD6A Data Sheet Dimensions (Unit : mm) D A c UMT6 e Q E E H 1 Lp L b A3 x S A e A 1 e 1 y S 1 l A S b2 Patternof terminal position areas [Not a recommended pattern of soldering pads] MILIMETERS INCHES DIM MIN MAX MIN MAX A 0.80 1.00 0.031 0.039 A1 0.00 0.10 0.000 0.004 A3 0.25 0.010 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.90 2.10 0.075 0.083 E 1.15 1.35 0.045 0.053 e 0.65 0.026 HE 2.00 2.20 0.079 0.087 L1 0.20 0.50 0.008 0.020 Lp 0.25 0.55 0.010 0.022 Q 0.10 0.30 0.004 0.012 x - 0.10 - 0.004 y - 0.10 - 0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2 - 0.40 - 0.016 e1 1.55 0.061 l1 - 0.65 - 0.026 Dimension in mm / inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 6/7 2014.12 - Rev.C

EMD6 / UMD6N / IMD6A Data Sheet Dimensions (Unit : mm) D A e SMT6 c Q E E H 1 p L L A3 b x S A e 1 e A 1 y S 1 l A S b2 Patternof terminal position areas [Not a recommended pattern of soldering pads] MILIMETERS INCHES DIM MIN MAX MIN MAX A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 A3 0.25 0.010 b 0.25 0.40 0.010 0.016 c 0.09 0.25 0.004 0.010 D 2.80 3.00 0.110 0.118 E 1.50 1.80 0.059 0.071 e 0.95 0.037 HE 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 Q 0.20 0.30 0.008 0.012 x - 0.20 - 0.008 y - 0.10 - 0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2 0.60 - 0.024 e1 2.10 0.083 l1 - 0.90 - 0.035 Dimension in mm / inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 7/7 2014.12 - Rev.C

Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representativeand verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com R1102A © 2014 ROHM Co., Ltd. All rights reserved.

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