Product Sample & Technical Tools & Support & Folder Buy Documents Software Community ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 ULQ200xA-Q1 High-Voltage High-Current Darlington Transistor Arrays 1 Features 3 Description • QualifiedforAutomotiveApplications The ULQ200xA-Q1 devices are high-voltage high- 1 current Darlington transistor arrays. Each consists of • ESDProtectionExceeds200VUsingMachine seven npn Darlington pairs that feature high-voltage Model(C=200pF,R=0) outputs with common-cathode clamp diodes for • 500-mA-RatedCollectorCurrent(SingleOutput) switching inductive loads. The collector-current rating • High-VoltageOutputs:50V of a single Darlington pair is 500 mA. The Darlington pairscanbeparalleledforhighercurrentcapability. • OutputClampDiodes The ULQ2003A-Q1 has a 2.7-kΩ series base resistor • InputsCompatibleWithVariousTypesofLogic for each Darlington pair, for operation directly with • Relay-DriverApplications TTL or 5-V CMOS devices. The ULQ2004A-Q1 has a 10.5-kΩ series base resistor to allow operation 2 Applications directly from CMOS devices that use supply voltages • RelayDrivers of 6 V to 15 V. The required input current of the ULQ2004A-Q1isbelowthatoftheULQ2003A-Q1. • StepperandDCBrushedMotorDrivers • LampDrivers DeviceInformation(1) • DisplayDrivers(LEDandGasDischarge) PARTNUMBER PACKAGE BODYSIZE(NOM) • LineDrivers SOIC(16) 9.90mmx3.90mm ULQ2003A-Q1 • LogicBuffers TSSOP(16) 5.00mmx4.40mm ULQ2004A-Q1 SOIC(16) 9.90mmx3.90mm (1) For all available packages, see the orderable addendum at theendofthedatasheet. SimplifiedBlockDiagram 9 COM 1 16 1B 1C 2 15 2B 2C 3 14 3B 3C 4 13 4B 4C 5 12 5B 5C 6 11 6B 6C 7 10 7B 7C 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com Table of Contents 1 Features.................................................................. 1 8.2 FunctionalBlockDiagram.........................................9 2 Applications........................................................... 1 8.3 FeatureDescription.................................................10 3 Description............................................................. 1 8.4 DeviceFunctionalModes........................................10 4 RevisionHistory..................................................... 2 9 ApplicationandImplementation........................ 11 9.1 ApplicationInformation............................................11 5 PinConfigurationandFunctions......................... 3 9.2 TypicalApplication..................................................11 6 Specifications......................................................... 4 9.3 SystemExamples...................................................14 6.1 AbsoluteMaximumRatings .....................................4 10 PowerSupplyRecommendations..................... 15 6.2 ESDRatings..............................................................4 11 Layout................................................................... 15 6.3 RecommendedOperatingConditions.......................4 6.4 ThermalInformation..................................................4 11.1 LayoutGuidelines.................................................15 6.5 ElectricalCharacteristics,ULQ2003ATand 11.2 LayoutExample....................................................15 ULQ2003AQ............................................................... 5 12 DeviceandDocumentationSupport................. 16 6.6 ElectricalCharacteristics,ULQ2004AT.....................5 12.1 RelatedLinks........................................................16 6.7 SwitchingCharacteristics,ULQ2003Aand 12.2 CommunityResources..........................................16 ULQ2004A.................................................................6 12.3 Trademarks...........................................................16 6.8 DissipationRatings...................................................6 12.4 ElectrostaticDischargeCaution............................16 6.9 TypicalCharacteristics..............................................6 12.5 Glossary................................................................16 7 ParameterMeasurementInformation..................7 13 Mechanical,Packaging,andOrderable 8 DetailedDescription.............................................. 9 Information........................................................... 16 8.1 Overview...................................................................9 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionD(April2010)toRevisionE Page • AddedPinConfigurationandFunctionssection,ESDRatingstable,FeatureDescriptionsection,DeviceFunctional Modes,ApplicationandImplementationsection,PowerSupplyRecommendationssection,Layoutsection,Device andDocumentationSupportsection,andMechanical,Packaging,andOrderableInformationsection .............................. 1 2 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 5 Pin Configuration and Functions DorPWPackage 16-PinSOICorTSSOP TopView 1B 1 16 1C 2B 2 15 2C 3B 3 14 3C 4B 4 13 4C 5B 5 12 5C 6B 6 11 6C 7B 7 10 7C E 8 9 COM PinFunctions PIN I/O DESCRIPTION NO. NAME 1 1B 2 2B 3 3B 4 4B I Channel1through7Darlingtonbaseinput 5 5B 6 6B 7 7B 8 E — Commonemittersharedbyallchannels(typicallytiedtoground) 9 COM — Commoncathodenodeforflybackdiodes(requiredforinductiveloads) 10 7C 11 6C 12 5C 13 4C O Channel1through7Darlingtoncollectoroutput 14 3C 15 2C 16 1C Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings at25°Cfree-airtemperature(unlessotherwisenoted)(1) MIN MAX UNIT V Collector-emittervoltage 50 V CE Clampdiodereversevoltage(2) 50 V V Inputvoltage(2) 30 V I Peakcollectorcurrent SeeFigure16 500 mA I Outputclampcurrent 500 mA OK Totalemitter-terminalcurrent –2.5 A SeeDissipation P Continuoustotalpowerdissipation D Ratings ULQ200xAT –40 105 T Operatingfree-airtemperature °C A ULQ200xAQ –40 125 T Junctiontemperature 150 °C J T Storagetemperature –65 150 °C stg (1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommendedOperating Conditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. (2) Allvoltagevaluesarewithrespecttotheemitter/substrateterminalE,unlessotherwisenoted. 6.2 ESD Ratings VALUE UNIT Electrostatic Human-bodymodel(HBM),perAECQ100-002(1) ±2000 V V (ESD) discharge Charged-devicemodel(CDM),perAECQ100-011 ±500 (1) AECQ100-002indicatesHBMstressingisdoneinaccordancewiththeANSI/ESDA/JEDECJS-001specification. 6.3 Recommended Operating Conditions overoperatingfree-airtemperaturerange(unlessotherwisenoted) MIN MAX UNIT V Collector-emittervoltage 0 50 V CE T Junctiontemperature –40 125 °C J 6.4 Thermal Information ULQ2003A-Q1, ULQ2003A-Q1 ULQ2004A-Q1 THERMALMETRIC(1) UNIT D(SOIC) PW(TSSOP) 16PINS 16PINS R Junction-to-ambientthermalresistance 73 108 °C/W θJA (1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication report,SPRA953. 4 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 6.5 Electrical Characteristics, ULQ2003AT and ULQ2003AQ overrecommendedoperatingconditions(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT I =200mA 2.7 C V =2V,see V On-stateinputvoltage CE I =250mA 2.9 V I(on) Figure10 C I =300mA 3 C ULQ2003AT 0.9 1.2 I =250μA,I =100mA,seeFigure9 I C ULQ2003AQ 1 1.3 Collector-emitter ULQ2003AT 1 1.4 V I =350μA,I =200mA,seeFigure9 V CE(sat) saturationvoltage I C ULQ2003AQ 1 1.5 ULQ2003AT 1.2 1.7 I =500μA,I =350mA,seeFigure9 I C ULQ2003AQ 1.2 1.8 V =50V, T =25°C 100 CE A I Collectorcutoffcurrent I =0,see μA CEX I Figure3 TA=105°C,ULQ2003AT 165 V Clampforwardvoltage I =350mA,seeFigure8 1.7 2.2 V F F I Off-stateinputcurrent V =50V,I =500μA,seeFigure5 30 65 μA I(off) CE C I Inputcurrent V =3.85V,seeFigure6 0.93 1.35 mA I I I Clampreversecurrent V =50V,T =25°C,seeFigure7 100 μA R R A C Inputcapacitance V =0,f=1MHz 15 25 pF i I 6.6 Electrical Characteristics, ULQ2004AT overrecommendedoperatingconditions(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT I =125mA 5 C V On-stateinputvoltage VCE=2V,see IC=200mA 6 V I(on) Figure10 I =275mA 7 C I =350mA 8 C I =250μA,I =100mA,seeFigure9 0.9 1.1 I C Collector-emittersaturation V I =350μA,I =200mA,seeFigure9 1 1.3 V CE(sat) voltage I C I =500μA,I =350mA,seeFigure9 1.2 1.6 I C VCE=50V, TA=25°C 50 II=0,SeeFigure3 TA=105°C I Collectorcutoffcurrent μA CEX VCE=50V,see II=0 100 Figure4 V =1V 500 I V Clampforwardvoltage I =350mA,seeFigure8 1.7 2.1 V F F I Off-stateinputcurrent V =50V,I =500μA,seeFigure5 50 65 μA I(off) CE C V =5V,seeFigure6 0.35 0.5 I I Inputcurrent mA I V =12V,,seeFigure6 1 1.45 I I Clampreversecurrent VR=50V,see TA=25°C 50 μA R Figure7 T =105°C 100 A C Inputcapacitance V =0,f=1MHz 15 25 pF i I Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com 6.7 Switching Characteristics, ULQ2003A and ULQ2004A overrecommendedoperatingconditions(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT t Propagationdelaytime,low-tohigh-leveloutput SeeFigure11 1 10 μs PLH t Propagationdelaytime,high-tolow-leveloutput SeeFigure11 1 10 μs PHL V High-leveloutputvoltageafterswitching V =50V,I =300mA,SeeFigure12 V –500 mV OH S O S 6.8 Dissipation Ratings DERATING T =25°C A FACTOR T =85°C T =105°C T =125°C PACKAGE POWER A A A ABOVE POWERRATING POWERRATING POWERRATING RATING T =25°C A D 950mW 7.6mW/°C 494mW 342mW 190mW 6.9 Typical Characteristics 2.5 2.5 V V ge- TA=25°C age- TA=25°C II=250µA olta 2 Volt 2 V II=250µA n II=350µA n o aturatio 1.5 IIII==355000µµAA Saturati 1.5 S r mitter 1 Emitte 1 II=500µA or-E ctor- ollect 0.5 Colle 0.5 C - CE(sat)-CE(sat) 0 VCE(saVt)CE(sat) 00 100 200 300 400 500 600 700 800 VV 0 100 200 300 400 500 600 700 800 IC(tot)- TotalCollectorCurrent- mA IC- CollectorCurrent- mA Figure2.Collector-EmitterSaturationVoltagevsTotal Figure1.Collector-EmitterSaturationVoltagevsCollector CollectorCurrent(TwoDarlingtonsinParallel) Current(OneDarlington) 6 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 7 Parameter Measurement Information Open VCE Open ICEX II(on) Open VI Open Figure3. I TestCircuit CEX Figure6. I TestCircuit I Open VCE VR ICEX IR VI Open Figure4. I TestCircuit CEX Open VCE Figure7. I TestCircuit R II(off) IC VF IF Open Figure5. I TestCircuit Figure8. V TestCircuit I(off) F Open Open IC hFE= II II VCE IC VI(on) VCE IC A. I isfixedformeasuringV ,variablefor I CE(sat) measuringhFE. Figure10. VI(on)TestCircuit Figure9. h ,V TestCircuit FE CE(sat) Figure11. PropagationDelay-TimeWaveforms Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com 200W ≤5ns ≤10ns VIH Input 90% 90% (seeNoteC) 1.5V 1.5V 10% 10% 40µs 0V VOH Output VOL VOLTAGEWAVEFORMS A. Thepulsegeneratorhasthefollowingcharacteristics:PRR=12.5kHz,Z =50Ω. O B. C includesprobeandjigcapacitance. L C. FortestingtheULQ2003A,V =3V;fortheULQ2004A,V =8V. IH IH Figure12. Latch-UpTestCircuitandVoltageWaveforms 8 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 8 Detailed Description 8.1 Overview This standard device has proven ubiquity and versatility across a wide range of applications. This is due to integration of 7 Darlington transistors of the device that are capable of sinking up to 500 mA and wide GPIO rangecapability. The ULQ200xA-Q1 devices comprise seven high-voltage, high-current NPN Darlington transistor pairs. All units feature a common emitter and open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads. The ULNQ200xA-Q1 devices have a series base resistor to each Darlington pair, thus allowing operation directly with TTL or CMOS operating at supply voltages of 5 V or 3.3 V. The ULQ2003xA-Q1 device offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodatedbyparallelingtheoutputs. This device can operate over a wide temperature range (–40°C to 105°C for ULQ200xAT or –40°C to 125°C for ULQ2003AQ). 8.2 Functional Block Diagram 9 COM 1 16 1B 1C 2 15 2B 2C 3 14 3B 3C 4 13 4B 4C 5 12 5B 5C 6 11 6B 6C 7 10 7B 7C Figure13. LogicDiagram Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com Functional Block Diagram (continued) R B ULQ2003A:R = 2.7 kW B ULQ2004A:RB= 10.5 kW 7.2 kW 3 kW A. Allresistorvaluesshownarenominal. B. The collector-emitter diode is a parasitic structure and should not be used to conduct current. If the collector(s) go belowgroundanexternalSchottkydiodeshouldbeaddedtoclampnegativeundershoots. Figure14. Schematics(EachDarlingtonPair) 8.3 Feature Description Each channel of the ULQ200xA-Q1 devices consist of Darlington connected NPN transistors. This connection creates the effect of a single transistor with a very high-current gain (β2). This can be as high as 10,000 A/A at certain currents. The very high β allows for high-output current drive with a very low input current, essentially equatingtooperationwithlowGPIOvoltages. The GPIO voltage is converted to base current through the 2.7-kΩ or 10.5-kΩ resistor connected between the input and base of the predriver Darlington NPN. The 7.2-kΩ and 3-kΩ resistors connected between the base and emitter of each respective NPN act as pulldowns and suppress the amount of leakage that may occur from the input. The diodes connected between the output and COM pin is used to suppress the kick-back voltage from an inductive load that is excited when the NPN drivers are turned off (stop sinking) and the stored energy in the coilscausesareversecurrenttoflowintothecoilsupplythroughthekick-backdiode. In normal operation the diodes on base and collector pins to emitter will be reversed biased. If these diodes are forward biased, internal parasitic NPN transistors will draw (a nearly equal) current from other (nearby) device pins. 8.4 Device Functional Modes 8.4.1 InductiveLoadDrive When the COM pin is tied to the coil supply voltage, ULQ200xA-Q1 devices are able to drive inductive loads and suppressthekick-backvoltagethroughtheinternalfree-wheelingdiodes. 8.4.2 ResistiveLoadDrive When driving a resistive load, a pullup resistor is needed in order for the ULQ200xA-Q1 devices to sink current andfortheretobealogichighlevel.TheCOMpincanbeleftfloatingfortheseapplications. 10 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validateandtesttheirdesignimplementationtoconfirmsystemfunctionality. 9.1 Application Information Typically, the ULQ200xA-Q1 device drives a high-voltage or high-current (or both) peripheral from an MCU or logic device that cannot tolerate these conditions. This design is a common application of ULQ200xA-Q1 device, driving inductive loads. This includes motors, solenoids and relays. Figure 15 shows an example of driving multipleinductiveloads. 9.2 Typical Application 3.3-V Logic ULQ2003A-Q1 IN1 OUT1 IN2 OUT2 3.3-V Logic IN3 OUT3 IN4 OUT4 VSUP 3.3-V Logic IN5 OUT5 IN6 OUT6 IN7 OUT7 GND COM VSUP Figure15. ULQ2003A-Q1DeviceasInductiveLoadDriver 9.2.1 DesignRequirements Forthisdesignexample,usetheparameterslistedinTable1astheinputparameters. Table1.DesignParameters DESIGNPARAMETER EXAMPLEVALUE GPIOvoltage 3.3Vor5V Coilsupplyvoltage 12Vto48V Numberofchannels 7 Outputcurrent(R ) 20mAto300mAperchannel COIL Dutycycle 100% Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com 9.2.2 DetailedDesignProcedure WhenusingULQ2003A-Q1deviceinacoildrivingapplication,determinethefollowing: • Inputvoltagerange • Temperaturerange • Outputanddrivecurrent • Powerdissipation 9.2.2.1 DriveCurrent The coil voltage (V ), coil resistance (R ), and low-level output voltage (V or V ) determine the coil SUP COIL CE(SAT) OL current. I =(V –V )/R (1) COIL SUP CE(SAT) COIL 9.2.2.2 Low-LevelOutputVoltage Thelow-leveloutputvoltage(V )isthesameasV andcanbedeterminedby,Figure1orFigure2. OL CE(SAT) 9.2.2.3 PowerDissipationandTemperature The number of coils driven is dependent on the coil current and on-chip power dissipation. The number of coils drivencanbedeterminedbyFigure16. Foramoreaccuratedeterminationofnumberofcoilspossible,useEquation2 tocalculateULQ200xA-Q1device on-chippowerdissipationP : D N P = åV ´I D OLi Li i=1 where • Nisthenumberofchannelsactivetogether • V istheOUT pinvoltagefortheloadcurrentI .ThisisthesameasV (2) OLi i Li CE(SAT) ToensurereliabilityofULQ200xA-Q1deviceandthesystem,theon-chippowerdissipationmustbelowerthator equaltothemaximumallowablepowerdissipation(PD )dictatedbyEquation3. (MAX) ( ) T -T PD = J(MAX) A (MAX) q JA where • T isthetargetmaximumjunctiontemperature J(max) • T istheoperatingambienttemperature A • R isthepackagejunctiontoambientthermalresistance (3) θJA LimitthediejunctiontemperatureoftheULQ200xA-Q1devicetolessthan125°C.TheICjunctiontemperatureis directlyproportionaltotheon-chippowerdissipation. 12 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 9.2.3 ApplicationCurve 600 A m 500 - nt e N=1 rr 400 N=4 u C N=3 r o ct e 300 oll N=2 C m N=6 mu 200 N=7 xi N=5 a M C-C 100 TA=70°C II N=NumberofOutputs ConductingSimultaneously 0 0 10 20 30 40 50 60 70 80 90 100 DutyCycle- % Figure16. DPackageMaximumCollectorCurrentvsDutyCycle Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com 9.3 System Examples VCC ULQ2003A V VDD ULQ2004A V 1 16 1 16 2 15 2 15 3 14 3 14 4 13 4 13 5 12 5 12 6 11 6 11 7 10 7 10 8 9 8 9 CMOS Lam Output Test TTL Output Figure17.TTLtoLoad Figure18.BufferforHigherCurrentLoads VCC ULQ2003A V 1 16 2 15 3 14 RP 4 13 5 12 6 11 7 10 8 9 TTL Output Figure19.UseofPullupResistorstoIncreaseDriveCurrent 14 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 www.ti.com SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 10 Power Supply Recommendations This device does not need a power supply. However, the COM pin is typically tied to the system power supply. When this is the case, it is very important to ensure that the output voltage does not heavily exceed the COM pin voltage. This discrepancy heavily forward biases the fly-back diodes and causes a large current to flow into COM,potentiallydamagingtheon-chipmetalorover-heatingthedevice. 11 Layout 11.1 Layout Guidelines Thin traces can be used on the input due to the low-current logic that is typically used to drive the ULQ200xA-Q1 devices. Take care to separate the input channels as much as possible, as to eliminate crosstalk. TI recommends thick traces for the output to drive whatever high currents that may be needed. Wire thickness can bedeterminedbythecurrentdensityofthetracematerialanddesireddrivecurrent. Because all of the channels currents return to a common emitter, it is best to size that trace width to be very wide.Someapplicationsrequireupto2.5A. 11.2 Layout Example 1B 1 16 1C 2B 2 15 2C 3B 3 14 3C 4B 4 13 4C 5B 5 12 5C 6B 6 11 6C 7B 7 10 7C E 8 9 VCOM GND Figure20. PackageLayout Copyright©2002–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

ULQ2003A-Q1,ULQ2004A-Q1 SGLS148E–DECEMBER2002–REVISEDDECEMBER2015 www.ti.com 12 Device and Documentation Support 12.1 Related Links The table below lists quick access links. Categories include technical documents, support and community resources,toolsandsoftware,andquickaccesstosampleorbuy. Table2.RelatedLinks TECHNICAL TOOLS& SUPPORT& PARTS PRODUCTFOLDER SAMPLE&BUY DOCUMENTS SOFTWARE COMMUNITY ULQ2003A-Q1 Clickhere Clickhere Clickhere Clickhere Clickhere ULQ2004A-Q1 Clickhere Clickhere Clickhere Clickhere Clickhere 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 12.3 Trademarks E2EisatrademarkofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 12.4 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 12.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 16 SubmitDocumentationFeedback Copyright©2002–2015,TexasInstrumentsIncorporated ProductFolderLinks:ULQ2003A-Q1 ULQ2004A-Q1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) ULQ2003AQDRQ1 ACTIVE SOIC D 16 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 ULQ2003AQ & no Sb/Br) ULQ2003ATDG4Q1 ACTIVE SOIC D 16 40 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 ULQ2003AT & no Sb/Br) ULQ2003ATDQ1 ACTIVE SOIC D 16 40 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 ULQ2003AT & no Sb/Br) ULQ2003ATDRG4Q1 ACTIVE SOIC D 16 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 ULQ2003AT & no Sb/Br) ULQ2003ATDRQ1 ACTIVE SOIC D 16 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 ULQ2003AT & no Sb/Br) ULQ2003ATPWRQ1 ACTIVE TSSOP PW 16 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 U2003AT & no Sb/Br) ULQ2004ATDRG4Q1 ACTIVE SOIC D 16 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 ULQ2004AT & no Sb/Br) ULQ2004ATDRQ1 ACTIVE SOIC D 16 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 105 ULQ2004AT & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF ULQ2003A-Q1, ULQ2004A-Q1 : •Catalog: ULQ2003A, ULQ2004A NOTE: Qualified Version Definitions: •Catalog - TI's standard catalog product Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2017 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) ULQ2003ATPWRQ1 TSSOP PW 16 2500 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2017 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) ULQ2003ATPWRQ1 TSSOP PW 16 2500 367.0 367.0 35.0 PackMaterials-Page2

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PACKAGE OUTLINE PW0016A TSSOP - 1.2 mm max height SCALE 2.500 SMALL OUTLINE PACKAGE SEATING PLANE C 6.6 TYP 6.2 A 0.1 C PIN 1 INDEX AREA 14X 0.65 16 1 2X 5.1 4.55 4.9 NOTE 3 8 9 0.30 B 4.5 16X 0.19 1.2 MAX 4.3 0.1 C A B NOTE 4 (0.15) TYP SEE DETAIL A 0.25 GAGE PLANE 0.15 0.05 0.75 0.50 0 -8 DETA 20AIL A TYPICAL 4220204/A 02/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side. 5. Reference JEDEC registration MO-153. www.ti.com

EXAMPLE BOARD LAYOUT PW0016A TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE 16X (1.5) SYMM (R0.05) TYP 1 16X (0.45) 16 SYMM 14X (0.65) 8 9 (5.8) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE: 10X SOLDER MASK METAL UNDER SOLDER MASK OPENING METAL SOLDER MASK OPENING EXPOSED METAL EXPOSED METAL 0.05 MAX 0.05 MIN ALL AROUND ALL AROUND NON-SOLDER MASK SOLDER MASK DEFINED DEFINED (PREFERRED) SOLDE15.000R MASK DETAILS 4220204/A 02/2017 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com

EXAMPLE STENCIL DESIGN PW0016A TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE 16X (1.5) SYMM (R0.05) TYP 1 16X (0.45) 16 SYMM 14X (0.65) 8 9 (5.8) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE: 10X 4220204/A 02/2017 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. www.ti.com

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