UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 Features  N-channel enhancement mode device PACKAGE OUTLINE  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than competitive devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 12* A DS Power Dissipation P 250 W D Junction Temperature T 200 °C J Storage Temperature T -55 to +150 °C STG Thermal Resistance θ 0.7 °C/W JC TYPICAL DEVICE IMPEDANCES F (MHz) Z (Ω) Z (Ω) IN LOAD 100 4.5-j6.0 14.5+j0.5 300 2.25-j1.75 7.5j1.0 500 1.5+j5.5 3.5+j3.5 V =28V, I =600 Ma, P =100.0 W DD DQ OUT Z is the series equivalent input impedance of the device from gate to gate. IN Z is the optimum series equivalent load impedance as measured from drain LOAD ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 15.0 mA DSS GS DS Drain-Source Leakage Current I - 3.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 3.0 µA V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 300.0 mA GS(TH) DS DS Forward Transconductance G 1.5 - S V = 10.0 V , I 3000.0 mA , Δ V = 1.0V, 80 μs Pulse M DS DS GS Input Capacitance C - 135 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance COSS - 90 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance C - 24 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 10 - dB V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz P DD DQ OUT Drain Efficiency ŋ 50 - % V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz D DD DQ OUT Return Loss R 10 - dB V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz L DD DQ OUT Load Mismatch Tolerance VSWR-T - 30:1 - V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz DD DQ OUT *Per side 111 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 Typical Broadband Performance Curves EFFICIENCY FREQUENCY POWER OUTPUT SUPPLY VOLTAGE VS VS P =10W I =600 mA (Push pull device) P =10 W I =600 mA F=500 MHz IN DD IN DQ 80 120 W) 100 %) 70 UT ( 80 NCY (60 OUTP 60 FICIE WER 40 EF50 P O 20 P 40 0 100 200 300 400 500 14 16 20 24 28 32 FREQUENCY (MHz) SUPPLY VOLTAGE (V) POWER OUTPUT POWER INPUT VS V =28 V I =600 mA (Push pull device) DD DQ 120 200MHz 400MHz W) 100 500MHz UT (80 P UT60 300MHz O R E40 W O20 P 0 0 1 2 4 6 8 10 12 POWER INPUT (W) 222 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 333 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support

UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 444 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support