TZX-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V range nom. 2.4 to 36 V Z Test current I 2; 5 mA ZT V specification Pulse current Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 10 000 per ammopack TZX-series TZX-series-TAP 30 000/box (52 mm tape) 10 000 per 14" reel TZX-series TZX-series-TR 30 000/box (52 mm tape) PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 DO-35 125 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation l = 4 mm, T = 25 °C P 500 mW L tot Zener current I P /V mA Z tot Z Thermal resistance junction to ambient air l = 4 mm, T =constant R 300 K/W L thJA Junction temperature T 175 °C j Storage temperature range T - 65 to + 175 °C stg Forward voltage (max.) I = 200 mA V 1.5 V F F Rev. 2.4, 14-Apr-14 1 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb ZENER VOLTAGE DYNAMIC TEST CURRENT REVERSE LEAKAGE CURRENT RANGE RESISTANCE PART NUMBER VZ at IZT1 IZT1 IR at VR IR at VR (1) ZZ at IZT1 V mA μA V μA V  MIN. MAX. MAX. MAX. MAX. TZX2V4A 2.3 2.5 5 5 0.5 50 1 100 TZX2V4B 2.4 2.6 5 5 0.5 50 1 100 TZX2V7A 2.5 2.7 5 5 0.5 10 1 100 TZX2V7B 2.6 2.8 5 5 0.5 10 1 100 TZX2V7C 2.7 2.9 5 5 0.5 10 1 100 TZX3V0A 2.8 3 5 5 0.5 6 1 100 TZX3V0B 2.9 3.1 5 5 0.5 6 1 100 TZX3V0C 3 3.2 5 5 0.5 6 1 100 TZX3V3A 3.1 3.3 5 5 1 2 1 100 TZX3V3B 3.2 3.4 5 5 1 2 1 100 TZX3V3C 3.3 3.5 5 5 1 2 1 100 TZX3V6A 3.4 3.6 5 5 1 2 1 100 TZX3V6B 3.5 3.7 5 5 1 2 1 100 TZX3V6C 3.6 3.8 5 5 1 2 1 100 TZX3V9A 3.7 3.9 5 5 1 2 1 100 TZX3V9B 3.8 4 5 5 1 2 1 100 TZX3V9C 3.9 4.1 5 5 1 2 1 100 TZX4V3A 4 4.2 5 5 1.5 1 1 100 TZX4V3B 4.1 4.3 5 5 1.5 1 1 100 TZX4V3C 4.2 4.4 5 5 1.5 1 1 100 TZX4V3D 4.3 4.5 5 5 1.5 1 1 100 TZX4V7A 4.4 4.6 5 5 2 6 2 100 TZX4V7B 4.5 4.7 5 5 2 5 2 100 TZX4V7C 4.6 4.8 5 5 2 4 2 100 TZX4V7D 4.7 4.9 5 5 2 3 2 100 TZX5V1A 4.8 5 5 5 2 2 2 100 TZX5V1B 4.9 5.1 5 5 2 2 2 100 TZX5V1C 5 5.2 5 5 2 2 2 100 TZX5V1D 5.1 5.3 5 5 2 2 2 100 TZX5V6A 5.2 5.5 5 5 2 1 2 40 TZX5V6B 5.3 5.6 5 5 2 1 2 40 TZX5V6C 5.4 5.7 5 5 2 1 2 40 TZX5V6D 5.5 5.8 5 5 2 1 2 40 TZX5V6E 5.6 5.9 5 5 2 1 2 40 TZX6V2A 5.7 6 5 1 3 3 4 15 TZX6V2B 5.8 6.1 5 1 3 3 4 15 TZX6V2C 6 6.3 5 1 3 3 4 15 TZX6V2D 6.1 6.4 5 1 3 3 4 15 TZX6V2E 6.3 6.6 5 1 3 3 4 15 TZX6V8A 6.4 6.7 5 1 3.5 2 4 15 TZX6V8B 6.6 6.9 5 1 3.5 2 4 15 TZX6V8C 6.7 7 5 1 3.5 2 4 15 TZX6V8D 6.9 7.2 5 1 3.5 2 4 15 Rev. 2.4, 14-Apr-14 2 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb ZENER VOLTAGE DYNAMIC TEST CURRENT REVERSE LEAKAGE CURRENT RANGE RESISTANCE PART NUMBER VZ at IZT1 IZT1 IR at VR IR at VR (1) ZZ at IZT1 V mA μA V μA V  MIN. MAX. MAX. MAX. MAX. TZX7V5A 7 7.3 5 1 5 30 6.65 15 TZX7V5B 7.2 7.6 5 1 5 30 6.84 15 TZX7V5C 7.3 7.7 5 1 5 30 6.94 15 TZX7V5D 7.5 7.9 5 1 5 30 7.13 15 TZX7V5X 7.07 7.45 5 1 5 30 6.72 15 TZX8V2A 7.7 8.1 5 1 6.2 0.1 7.32 20 TZX8V2B 7.9 8.3 5 1 6.2 0.1 7.5 20 TZX8V2C 8.1 8.5 5 1 6.2 0.1 7.7 20 TZX8V2D 8.3 8.7 5 1 6.2 0.1 7.98 20 TZX9V1A 8.5 8.9 5 1 6.8 0.04 8.08 20 TZX9V1B 8.7 9.1 5 1 6.8 0.04 8.27 20 TZX9V1C 8.9 9.3 5 1 6.8 0.04 8.46 20 TZX9V1D 9.1 9.5 5 1 6.8 0.04 8.65 20 TZX9V1E 9.3 9.7 5 1 6.8 0.04 8.84 20 TZX10A 9.5 9.9 5 1 7.5 0.04 9.03 25 TZX10B 9.7 10.1 5 1 7.5 0.04 9.22 25 TZX10C 9.9 10.3 5 1 7.5 0.04 9.41 25 TZX10D 10.2 10.6 5 1 7.5 0.04 9.69 25 TZX11A 10.4 10.8 5 1 8.2 0.04 9.88 25 TZX11B 10.7 11.1 5 1 8.2 0.04 10.2 25 TZX11C 10.9 11.3 5 1 8.2 0.04 10.4 25 TZX11D 11.1 11.6 5 1 8.2 0.04 10.5 25 TZX12A 11.4 11.9 5 1 9.5 0.04 10.8 35 TZX12B 11.6 12.1 5 1 9.5 0.04 11 35 TZX12C 11.9 12.4 5 1 9.5 0.04 11.3 35 TZX12D 12.2 12.7 5 1 9.5 0.04 11.6 35 TZX12X 11.44 12.03 5 1 9.5 0.04 10.9 35 TZX13A 12.4 12.9 5 1 10 0.04 11.8 35 TZX13B 12.6 13.1 5 1 10 0.04 12 35 TZX13C 12.9 13.4 5 1 10 0.04 12.3 35 TZX14A 13.2 13.7 5 1 11 0.04 12.5 35 TZX14B 13.5 14 5 1 11 0.04 12.8 35 TZX14C 13.8 14.3 5 1 11 0.04 13.1 35 TZX15A 14.1 14.7 5 1 11.5 0.04 13.4 40 TZX15B 14.5 15.1 5 1 11.5 0.04 13.8 40 TZX15C 14.9 15.5 5 1 11.5 0.04 14.2 40 TZX15X 14.35 15.09 5 1 11.5 0.04 13.6 40 TZX16A 15.3 15.9 5 1 12 0.04 14.5 45 TZX16B 15.7 16.5 5 1 12 0.04 14.9 45 TZX16C 16.3 17.1 5 1 12 0.04 15.5 45 TZX18A 16.9 17.7 5 1 13 0.04 16.1 55 TZX18B 17.5 18.3 5 1 13 0.04 16.6 55 TZX18C 18.1 19 5 1 13 0.04 17.2 55 TZX20A 18.8 19.7 2 1 15 0.04 17.9 60 TZX20B 19.5 20.4 2 1 15 0.04 18.5 60 TZX20C 20.2 21.2 2 1 15 0.04 19.2 60 TZX22A 20.9 21.9 2 1 17 0.04 19.9 65 Rev. 2.4, 14-Apr-14 3 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb ZENER VOLTAGE DYNAMIC TEST CURRENT REVERSE LEAKAGE CURRENT RANGE RESISTANCE PART NUMBER VZ at IZT1 IZT1 IR at VR IR at VR (1) ZZ at IZT1 V mA μA V μA V  MIN. MAX. MAX. MAX. MAX. TZX22B 21.6 22.6 2 1 17 0.04 20.5 65 TZX22C 22.3 23.3 2 1 17 0.04 21.2 65 TZX24A 22.9 24 2 1 19 0.04 21.8 70 TZX24B 23.6 24.7 2 1 19 0.04 22.4 70 TZX24C 24.3 25.5 2 1 19 0.04 23.1 70 TZX24X 22.61 23.77 2 1 19 0.04 21.5 70 TZX27A 25.2 26.6 2 1 21 0.04 23.9 80 TZX27B 26.2 27.6 2 1 21 0.04 24.9 80 TZX27C 27.2 28.6 2 1 21 0.04 25.8 80 TZX27X 26.99 28.39 2 1 21 0.04 25.6 80 TZX30A 28.2 29.6 2 1 23 0.04 26.8 100 TZX30B 29.2 30.6 2 1 23 0.04 27.7 100 TZX30C 30.2 31.6 2 1 23 0.04 28.7 100 TZX30X 29.02 30.51 2 1 23 0.04 27.6 100 TZX33A 31.2 32.6 2 1 25 0.04 29.6 120 TZX33B 32.2 33.6 2 1 25 0.04 30.6 120 TZX33C 33.2 34.5 2 1 25 0.04 31.5 120 TZX36A 34.2 35.7 2 1 27 0.04 32.5 140 TZX36B 35.3 36.8 2 1 27 0.04 33.5 140 TZX36C 36.4 38 2 1 27 0.04 34.6 140 TZX36X 35.36 37.19 2 1 27 0.04 33.6 140 Notes • Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin.  40 nA at Tj = 25 °C (1) Additional measurement BASIC CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb W) 500 600 K/ W) bient ( 400 on (m 500 m ati 400 A p Junction 300 l l wer Dissi 300 st. 200 Po 200 Therm. Resi 1000 TL = constant P - Total tot 1000 - A 0 5 10 15 20 0 40 80 120 160 200 RthJ I - Lead Length (mm) 95 9611 95 9602 Tamb - Ambient Temperature (°C) Fig. 1 - Thermal Resistance vs. Lead Length Fig. 2 - Total Power Dissipation vs. Ambient Temperature Rev. 2.4, 14-Apr-14 4 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TZX-Series www.vishay.com Vishay Semiconductors 1000 200 V) pF) ge (m 100 ance ( 150 VR = 2 V han acit Tj = 25 °C C p 100 oltage 10 IZ = 5 mA ode Ca V - VZ - DiD 50 C 1 0 0 5 10 15 20 25 0 5 10 15 20 25 95 9598 VZ - Z-Voltage (V) 95 9601 VZ - Z-Voltage (V) Fig. 3 - Typical Change of Working Voltage under Operating Fig. 6 - Diode Capacitance vs. Z-Voltage Conditions at T = 25 °C amb 1.3 100 e VZtn = VZt/VZ (25 °C) oltage Chang 11..12 TKVZ = 10 x 10-4/K 846 xxx 111000---444///KKK Current (mA) 101 Tj = 25 °C ve V 1.0 20 x 10-4/K ard 0.1 - RelatiZtn 0.9 -- 42 xx 1100--44//KK I - ForwF 0.01 V 0.8 0.001 - 60 0 60 120 180 240 0 0.2 0.4 0.6 0.8 1.0 95 9599 Tj - Junction Temperature (°C) 959605 VF - Forward Voltage (V) Fig. 4 - Typical Change of Working Voltage vs. Fig. 7 - Forward Current vs. Forward Voltage Junction Temperature 100 15 nt e 80 oeffici 10 mA) PTtaomt =b =5 0205 m°CW perature C-4V (10/K)Z 5 Z-Current ( 4600 emof IZ = 5 mA - Z - TZ 0 I 20 V K T 0 - 5 0 4 6 8 12 20 0 10 20 30 40 50 95 9604 VZ - Z-Voltage (V) 95 9600 VZ - Z-Voltage (V) Fig. 8 - Z-Current vs. Z-Voltage Fig. 5 - Temperature Coefficient of Vz vs. Z-Voltage Rev. 2.4, 14-Apr-14 5 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TZX-Series www.vishay.com Vishay Semiconductors 50 1000 Ω) A) 40 PTtaomt =b =5 0205 m°CW ance ( IZ = 1 mA m st 100 nt ( 30 Resi Z-Curre 20 ntial Z- 10 105 mmAA - Z ere I 10 Diff 0 r - Z 1 Tj = 25 °C 15 20 25 30 35 0 5 10 15 20 25 95 9607 VZ - Z-Voltage (V) 95 9606 VZ - Z-Voltage (V) Fig. 9 - Z-Current vs. Z-Voltage Fig. 10 - Differential Z-Resistance vs. Z-Voltage W) K/ 1000 d. ( n o e C tp/T = 0.5 or Puls 100 tp/T = 0.2 e f Single Pulse R = 300 K/W c thJA sistan 10 tp/T = 0.01 T = Tj max. - Tamb Re tp/T = 0.1 tp/T = 0.02 ermal tp/T = 0.05 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) Th 1 Z - thp 10-1 100 t - Pulse Leng1t0h1 (ms) 102 95 9603 p Fig. 11 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): DO-35 Cathode Identification Ø 0.6 max. [0.024] Ø 0.4 min. [0.015] 26 min. [1.024] 33..91 mmainx.. [[00..112504]] 26 min. [1.024] 1.7 [0.067] 1.3 [0.050] Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.4, 14-Apr-14 6 Document Number: 85614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: TZX2V4B-TAP TZX33A-TAP TZX13A-TAP TZX8V2A-TAP TZX22C-TAP TZX12C-TAP TZX6V2A-TAP TZX7V5C- TAP TZX11A-TAP TZX6V8B-TAP TZX3V0C-TAP TZX4V7A-TAP TZX2V7A-TAP TZX5V1A-TAP TZX9V1A-TAP TZX12B-TAP TZX22B-TAP TZX14A-TAP TZX24A-TAP TZX27A-TAP TZX6V8A-TAP TZX3V3C-TAP TZX6V8D- TAP TZX15B-TAP TZX5V6E-TAP TZX27C-TAP TZX5V6B-TAP TZX14B-TAP TZX33B-TAP TZX13B-TAP TZX24B-TAP TZX36A-TAP TZX16A-TAP TZX6V2E-TAP TZX3V6B-TAP TZX7V5D-TAP TZX3V9A-TAP TZX5V6D- TAP TZX6V8C-TAP TZX15C-TAP TZX20B-TAP TZX30B-TAP TZX10B-TAP TZX11D-TAP TZX6V2B-TAP TZX7V5A-TAP TZX22A-TAP TZX12A-TAP TZX3V0B-TAP TZX8V2B-TAP TZX2V7C-TAP TZX9V1B-TAP TZX5V1D-TAP TZX4V7B-TAP TZX5V1B-TAP TZX15A-TAP TZX9V1C-TAP TZX11C-TAP TZX6V2C-TAP TZX9V1D-TAP TZX2V7B-TAP TZX8V2C-TAP TZX27B-TAP TZX16C-TAP TZX36C-TAP TZX20A-TAP TZX30A- TAP TZX10A-TAP TZX3V0A-TAP TZX16B-TAP TZX36B-TAP TZX3V6C-TAP TZX18C-TAP TZX4V3A-TAP TZX5V6C-TAP TZX33C-TAP TZX13C-TAP TZX12D-TAP TZX3V3A-TAP TZX4V7D-TAP TZX18B-TAP TZX11B- TAP TZX9V1E-TAP TZX3V3B-TAP TZX14C-TAP TZX24C-TAP TZX3V9B-TAP TZX18A-TAP TZX20C-TAP TZX10C-TAP TZX4V3B-TAP TZX4V3D-TAP TZX2V4A-TAP TZX5V6A-TAP TZX30C-TAP TZX3V9C-TAP TZX10D- TAP TZX3V6A-TAP TZX8V2D-TAP TZX7V5B-TAP