TS912, TS912A, TS912B Rail-to-rail CMOS dual operational amplifier − Datasheet production data Features ■ Rail-to-rail input and output voltage ranges ■ Single (or dual) supply operation from 2.7 to 16V N DIP8 ■ Extremely low input bias current: 1pA typ. (plastic package) ■ Low input offset voltage: 2mV max. ■ Specified for 600 Ω and 100 Ω loads ■ Low supply current: 200 μA/amplifier (V = 3V) CC D ■ Latch-up immunity SO-8 ■ ESD tolerance: 3kV (plastic micropackage) ■ Spice macromodel included in this specification Related products Pin connections (top view) ■ See TS56x series for better accuracy and smaller packages Description The TS912 device is a rail-to-rail CMOS dual operational amplifier designed to operate with a single or dual supply voltage. The input voltage range V includes the two icm supply rails VCC+ and VCC-. The output reaches V - +30mV, V + -40mV, CC CC with R = 10kΩ and V - +300mV, L CC V + -400mV, with R = 600 Ω . CC L This product offers a broad supply voltage operating range from 2.7 to 16V and a supply current of only 200 μA/amp. (V = 3 V). CC Source and sink output current capability is typically 40mA (at V = 3V), fixed by an internal CC limitation circuit. November 2012 Doc ID 2325 Rev 7 1/21 This is information on a product in full production. www.st.com 21

Contents TS912, TS912A, TS912B Contents 1 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 Schematic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Macromodel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 Important note concerning this macromodel . . . . . . . . . . . . . . . . . . . . . . 13 4.2 Macromodel code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.1 DIP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Absolute maximum ratings and operating conditions 1 Absolute maximum ratings and operating conditions Table 1. A bsolute maximum ratings Symbol Parameter Value Unit V Supply voltage(1) 18 V CC V Differential input voltage(2) ±18 V id V Input voltage(3) -0.3 to 18 V i I Current on inputs ±50 mA in I Current on outputs ±130 mA o T Storage temperature -65 to +150 °C stg T Maximum junction temperature 150 °C j Thermal resistance junction-to-ambient(4) Rthja DIP8 85 °C/W SO-8 125 Thermal resistance junction to case(4) Rthjc DIP8 41 °C/W SO-8 40 HBM: human body model(5) 3 kV ESD MM: machine model(6) 200 V CDM: charged device model(7) 1500 V 1. All voltage values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output voltages must never exceed V + +0.3V. CC 4. Short-circuits can cause excessive heating. Destructive dissipation can result from simultaneous short-circuits on all amplifiers. These values are typical. 5. Human body model: a 100pF capacitor is charged to the specified voltage, then discharged through a 1.5kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. 6. Machine model: a 200pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of connected pin combinations while the other pins are floating. 7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly to ground through only one pin. This is done for all pins. Table 2. O perating conditions Symbol Parameter Value Unit V Supply voltage 2.7 to 16 V CC V Common mode input voltage range V -0.2 to V +0.2 V icm CC- CC+ T Operating free air temperature range -40 to + 125 °C oper Doc ID 2325 Rev 7 3/21

Schematic diagram TS912, TS912A, TS912B 2 Schematic diagram Figure 1. Schematic diagram (1/2 TS912) input input 4/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Electrical characteristics 3 Electrical characteristics Table 3. V = 3V, V = 0V, R , C connected to V /2, T = 25 °C CC+ CC- L L CC amb (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Input offset voltage (V = V = V /2) ic o CC TS912 10 TS912A 5 TS912B 2 V mV io T ≤ T ≤ T min amb max TS912 12 TS912A 7 TS912B 3 ΔV Input offset voltage drift 5 μV/°C io Input offset current(1) 1 100 I pA io T ≤ T ≤ T 200 min amb max Input bias current(1) 1 150 I pA ib T ≤ T ≤ T 300 min amb max Supply current (per amplifier, A = 1, no load) 200 300 I VCL μA CC T ≤ T ≤ T 400 min amb max Common mode rejection ratio CMR 70 dB V = 0 to 3V, V = 1.5V ic o SVR Supply voltage rejection ratio (V + = 2.7 to 3.3V, V = V /2) 50 80 dB CC o CC Large signal voltage gain (R = 10kΩ, V = 1.2V to 1.8V) 3 10 A L o V/mV vd T ≤ T ≤ T 2 min amb max High level output voltage (V = 1V) id RL = 100kΩ 2.95 RL = 10kΩ 2.9 2.96 VOH RRL == 610000ΩΩ 2.3 22.6 V L T ≤ T ≤ T min amb max R = 10kΩ 2.8 L R = 600Ω 2.1 L Low level output voltage (V = -1V) id R = 100kΩ 50 L R = 10kΩ 30 70 L R = 600Ω 300 400 VOL RL = 100Ω 900 mV L T ≤ T ≤ T min amb max R = 10kΩ 100 L R = 600Ω 600 L Output short-circuit current (V = ±1V) id Io Source (Vo = VCC-) 20 40 mA Sink (V = V ) 20 40 o CC+ Gain bandwidth product GBP 0.8 MHz (A = 100, R = 10kΩ, C = 100pF, f = 100kHz) VCL L L Doc ID 2325 Rev 7 5/21

Electrical characteristics TS912, TS912A, TS912B Table 3. V = 3V, V = 0V, R , C connected to V /2, T = 25 °C CC+ CC- L L CC amb (unless otherwise specified) (continued) Symbol Parameter Min. Typ. Max. Unit SR+ Slew rate (A = 1, R = 10kΩ, C = 100pF, V = 1.3V to 1.7V) 0.4 V/μs VCL L L i SR- Slew rate (A = 1, R = 10kΩ, C = 100pF, V = 1.3V to 1.7V) 0.3 V/μs VCL L L i φm Phase margin 30 Degrees en Equivalent input noise voltage (R = 100Ω, f = 1kHz) 30 nV/√Hz s 1. Maximum values include unavoidable inaccuracies of the industrial tests. 6/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Electrical characteristics Table 4. V = 5V, V = 0V, R , C connected to V /2, T = 25 °C CC+ CC- L L CC amb (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Input offset voltage (V = V = V /2) ic o CC TS912 10 TS912A 5 TS912B 2 V mV io T ≤ T ≤ T min amb max TS912 12 TS912A 7 TS912B 3 ΔV Input offset voltage drift 5 μV/°C io Input offset current(1) 1 100 I pA io T ≤ T ≤ T 200 min amb max Input bias current(1) 1 150 I pA ib T ≤ T ≤ T 300 min amb max Supply current (per amplifier, A = 1, no load) 230 350 I VCL μA CC T ≤ T ≤ T 450 min amb max Common mode rejection ratio CMR 60 85 dB V = 1.5 to 3.5V, V = 2.5V ic o SVR Supply voltage rejection ratio (V = 3 to 5V, V = V /2) 55 80 dB CC+ o CC Large signal voltage gain (R = 10 kΩ, V = 1.5 V to 3.5 V) 10 40 A L o V/mV vd T ≤ T ≤ T 7 min amb max High level output voltage (V = 1 V) id R = 100 kΩ 4.95 L R = 10 kΩ 4.9 4.95 L R = 600 Ω 4.25 4.55 VOH RL = 100 Ω 3.7 V L T ≤ T ≤ T min amb max R = 10 kΩ 4.8 L R = 600 Ω 4.1 L Low level output voltage (V = -1 V) id R = 100 kΩ 50 L R = 10 kΩ 40 100 L R = 600 Ω 350 500 VOL RL = 100 Ω 1400 mV L T ≤ T ≤ T min amb max R = 10 kΩ 150 L R = 600 Ω 750 L Output short-circuit current (V = ±1 V) id Io Source (Vo = VCC-) 45 65 mA Sink (V = V ) 45 65 o CC+ Gain bandwidth product GBP 1 MHz (A = 100, R = 10 kΩ, C = 100 pF, f = 100 kHz) VCL L L SR+ Slew rate (A = 1, R = 10 kΩ, C = 100 pF, V = 1 V to 4 V) 0.8 V/μs VCL L L i SR- Slew rate (A = 1, R = 10 kΩ, C = 100 pF, V = 1 V to 4 V) 0.6 V/μs VCL L L i Doc ID 2325 Rev 7 7/21

Electrical characteristics TS912, TS912A, TS912B Table 4. V = 5V, V = 0V, R , C connected to V /2, T = 25 °C CC+ CC- L L CC amb (unless otherwise specified) (continued) Symbol Parameter Min. Typ. Max. Unit en Equivalent input noise voltage (R = 100 Ω, f = 1 kHz) 30 nV/√Hz s V /V Channel separation (f = 1 kHz) 120 dB O1 O2 φm Phase margin 30 Degrees 1. Maximum values include unavoidable inaccuracies of the industrial tests. 8/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Electrical characteristics Table 5. V = 10 V, V = 0 V, R , C connected to V /2, T = 25 °C CC+ CC- L L CC amb (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Input offset voltage (V = V = V /2) ic o CC TS912 10 TS912A 5 TS912B 2 V mV io T ≤ T ≤ T min amb max TS912 12 TS912A 7 TS912B 3 ΔV Input offset voltage drift 5 μV/°C io Input offset current(1) 1 100 I pA io T ≤ T ≤ T 200 min amb max Input bias current(1) 1 150 I pA ib T ≤ T ≤ T 300 min amb max Supply current (per amplifier, A = 1, no load) 400 600 I VCL μA CC T ≤ T ≤ T 700 min amb max Common mode rejection ratio CMR V = 3 to 7 V, V = 5 V 60 90 dB ic o V = 0 to 10 V, V = 5 V 50 75 ic o SVR Supply voltage rejection ratio (V = 5 to 10 V, V = V /2) 60 90 dB CC+ o CC Large signal voltage gain (R = 10 kΩ, V = 2.5 V to 7.5 V) 15 50 A L o V/mV vd T ≤ T ≤ T 10 min amb max High level output voltage (V = 1V) id R = 100 kΩ 9.95 L R = 10 kΩ 9.85 9.95 L R = 600 Ω 9 9.35 VOH RL = 100 Ω 7.8 V L T ≤ T ≤ T min amb max R = 10 kΩ 9.8 L R = 600 Ω 8.8 L Low level output voltage (V = -1 V) id R = 100 kΩ 50 L R = 10 kΩ 50 150 L R = 600 Ω 650 800 VOL RL = 100 Ω 2300 mV L T ≤ T ≤ T min amb max R = 10 kΩ 150 L R = 600 Ω 900 L Output short-circuit current (V = ±1 V) id Io Source (Vo = VCC-) 45 65 mA Sink (V = V ) 50 75 o CC+ Gain bandwidth product GBP 1.4 MHz (A = 100, R = 10 kΩ, C = 100 pF, f = 100 kHz) VCL L L Doc ID 2325 Rev 7 9/21

Electrical characteristics TS912, TS912A, TS912B Table 5. V = 10 V, V = 0 V, R , C connected to V /2, T = 25 °C CC+ CC- L L CC amb (unless otherwise specified) (continued) Symbol Parameter Min. Typ. Max. Unit Slew rate SR+ 1.3 V/μs (A = 1, R = 10 kΩ, C = 100 pF, V = 2.5 V to 7.5 V) VCL L L i Slew rate SR- 0.8 V/μs (A = 1, R = 10 kΩ, C = 100 pF, V = 2.5 V to 7.5 V) VCL L L i φm Phase margin 40 Degrees en Equivalent input noise voltage (R = 100 Ω, f = 1 kHz) 30 nV/√Hz s Total harmonic distortion THD (AVCL = 1, RL = 10 kΩ, CL = 100 pF, Vo=4.75 V to 5.25 V, 0.02 % f = 1 kHz) C Input capacitance 1.5 pF in 1. Maximum values include unavoidable inaccuracies of the industrial tests. 10/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Electrical characteristics Figure 2. S upply current (each amplifier) Figure 3. High level output voltage vs. high vs. supply voltage level output current (V = +5 V, V = +3 V) CC CC nt e e g ply curr ut volta p p u ut S O Supply voltage Output current Figure 4. Low level output voltage vs. low Figure 5. Input bias current vs. temperature level output current (V = +3 V, V = +5 V) CC CC nt e oltage s curr v a utput put bi O n I Output current Temperature Figure 6. High level output voltage vs. high Figure 7. Low level output voltage vs. low level output current level output current (V = +16 V, V = +10 V) (V = 16 V, V = 10 V) CC CC CC CC Output voltage Output voltage Output current Output current Doc ID 2325 Rev 7 11/21

Electrical characteristics TS912, TS912A, TS912B Figure 8. G ain and phase vs. frequency Figure 9. Gain bandwidth product vs. supply (R = 10 kΩ) voltage (R = 10 kΩ) L L Gain Phase ain od. G pr se w. a d h n P a b n ai G Frequency Supply voltage Figure 10. Phase margin vs. supply voltage Figure 11. Gain and phase vs. frequency (R = 10 kΩ) (R = 600 Ω) L L Gain Phase n n ai gi G ar se m a e Ph s a h P Supply voltage Frequency Figure 12. Gain bandwidth product vs. supply Figure 13. Phase margin vs. supply voltage voltage (R = 600 Ω) (R = 600 Ω) L L d. o w. pr argin d m n a e b s n a ai Ph G Supply voltage Supply voltage 12/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Macromodel F igure 14. Input voltage noise vs. frequency Frequency 4 Macromodel 4.1 Important note concerning this macromodel ● All models are a trade-off between accuracy and complexity (i.e. simulation time). ● Macromodels are not a substitute to breadboarding; rather, they confirm the validity of a design approach and help to select surrounding component values. ● A macromodel emulates the nominal performance of a typical device within specified operating conditions (temperature, supply voltage, for example). Thus the macromodel is often not as exhaustive as the datasheet, its purpose is to illustrate the main parameters of the product. Data derived from macromodels used outside of the specified conditions (V , temperature, CC for example) or even worse, outside of the device operating conditions (V , V , for CC icm example), is not reliable in any way. Doc ID 2325 Rev 7 13/21

Macromodel TS912, TS912A, TS912B 4.2 Macromodel code ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS912 1 2 3 4 5 ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.563355E-14 CJO=10F * INPUT STAGE CIP 2 5 1.500000E-12 CIN 1 5 1.500000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 7.655100E+00 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 3.82E-08 DINN 17 13 MDTH 400E-12 VIN 17 5 -0.5000000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 -0.5000000E+00 FCP 4 5 VOFP 7.750000E+00 FCN 5 4 VOFN 7.750000E+00 * AMPLIFYING STAGE FIP 5 19 VOFP 5.500000E+02 FIN 5 19 VOFN 5.500000E+02 RG1 19 5 5.087344E+05 RG2 19 4 5.087344E+05 CC 19 29 2.200000E-08 HZTP 30 29 VOFP 12.33E+02 HZTN 5 30 VOFN 12.33E+02 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3135 VIPM 28 4 150 HONM 21 27 VOUT 3135 VINM 5 27 150 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 65 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.924 14/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Macromodel HSCP 68 25 VSCP1 1E8 DON 69 19 MDTH 400E-12 VON 24 5 2.4419107 HSCN 24 69 VSCN1 1.5E8 VSCTHP 60 61 0.1375 DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.75 ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS Doc ID 2325 Rev 7 15/21

Package information TS912, TS912A, TS912B 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 16/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Package information 5.1 DIP8 package information Figure 15. DIP8 package outline Table 6. DIP8 package mechanical data Dimensions Symbol Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 5.33 0.210 A1 0.38 0.015 A2 2.92 3.30 4.95 0.115 0.130 0.195 b 0.36 0.46 0.56 0.014 0.018 0.022 b2 1.14 1.52 1.78 0.045 0.060 0.070 c 0.20 0.25 0.36 0.008 0.010 0.014 D 9.02 9.27 10.16 0.355 0.365 0.400 E 7.62 7.87 8.26 0.300 0.310 0.325 E1 6.10 6.35 7.11 0.240 0.250 0.280 e 2.54 0.100 eA 7.62 0.300 eB 10.92 0.430 L 2.92 3.30 3.81 0.115 0.130 0.150 Doc ID 2325 Rev 7 17/21

Package information TS912, TS912A, TS912B 5.2 SO-8 package information Figure 16. SO-8 package outline Table 7. SO-8 package mechanical data Dimensions Symbol Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 1.75 0.069 A1 0.10 0.25 0.004 0.010 A2 1.25 0.049 b 0.28 0.48 0.011 0.019 c 0.17 0.23 0.007 0.010 D 4.80 4.90 5.00 0.189 0.193 0.197 E 5.80 6.00 6.20 0.228 0.236 0.244 E1 3.80 3.90 4.00 0.150 0.154 0.157 e 1.27 0.050 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 L1 1.04 0.040 k 0 8° 1° 8° ccc 0.10 0.004 18/21 Doc ID 2325 Rev 7

TS912, TS912A, TS912B Ordering information 6 Ordering information T able 8. Order codes Temperature Part number Package Packing Marking range TS912IN TS912IN DIP8 Tube TS912AIN TS912AIN TS912ID 912I TS912IDT TS912AID SO-8 912AI TS912AIDT -40 °C, +125 °C Tube or TS912BID tape and reel 912BI TS912BIDT TS912IYDT(1) 912IY SO-8 TS912AIYDT(1) 912AIY (automotive grade level) TS912BIYDT(1) 912BY 1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 and Q 002 or equivalent. Doc ID 2325 Rev 7 19/21

Revision history TS912, TS912A, TS912B 7 Revision history T able 9. Document revision history Date Revision Changes 04-Dec-2001 1 First release. PPAP references inserted in the datasheet, see order codes table. 31-Jul-2005 2 ESD protection inserted in AMR table. Some errors in the Order Codes table were corrected. 03-Oct-2005 3 Reorganization of Section4: Macromodel. 13-Feb- 2006 4 Parameters added in AMR table (T, ESD, R , R ). j thja thjc Corrected units and ESD footnotes in Table1: Absolute maximum ratings. Corrected misalignments in electrical characteristics table. 16-Oct-2007 5 Updated Section4: Macromodel. Added missing automotive grade order codes and footnote in Table8: Order codes. Format update. 01-Feb-2010 6 Added TS912A and TS912B part numbers on cover page. Updated Features (added Related products). Updated Figure3, Figure4, Figure6 to Figure13 (added conditions to differentiate them). 06-Nov-2012 7 Removed TS912IYD, TS912AIYD, and TS912BIYD device from Table8. Minor corrections throughout document. 20/21 Doc ID 2325 Rev 7

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: TS912ID TS912IN TS912AID TS912AIN TS912BID TS912BIDT TS912IDT TS912AIDT TS912AIYDT TS912IYDT TS912BIYDT