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ICGOO电子元器件商城为您提供TPS22932BYFPR由Texas Instruments设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TPS22932BYFPR价格参考。Texas InstrumentsTPS22932BYFPR封装/规格:PMIC - 配电开关,负载驱动器, 。您可以下载TPS22932BYFPR参考资料、Datasheet数据手册功能说明书,资料中有TPS22932BYFPR 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC LOAD SWITCH ULOW 6DSBGA电源开关 IC - 配电 Lo-In Vltg Ultra Low On Res Load Sw

DevelopmentKit

TPS22932BEVM

产品分类

PMIC - 电源分配开关集成电路 - IC

品牌

Texas Instruments

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

开关 IC,电源开关 IC - 配电,Texas Instruments TPS22932BYFPR-

数据手册

点击此处下载产品Datasheet

产品型号

TPS22932BYFPR

PCN组件/产地

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Rds(On)

55 毫欧

产品目录页面

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产品种类

电源开关 IC - 配电

供应商器件封装

6-DSBGA

其它名称

296-25354-1

内部开关

包装

剪切带 (CT)

商标

Texas Instruments

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻—最大值

115 mOhms

封装

Reel

封装/外壳

6-XFBGA,DSBGA

封装/箱体

DSBGA-6

工作温度

-40°C ~ 85°C

工作电源电压

1.1 V to 3.6 V

工厂包装数量

3000

开关类型

通用

最大功率耗散

0.8 W

最大工作温度

+ 85 C

最大输入电压

3.6 V

最小工作温度

- 40 C

最小输入电压

1.1 V

标准包装

1

比率-输入:输出

1:1

特性

负载释放,压摆率受控型

电压-负载

1.1 V ~ 3.6 V

电压-输入

1.1 V ~ 3.6 V

电流-输出(最大值)

500mA

电流限制

500mA

空闲时间—最大值

160 us

类型

通用

系列

TPS22932B

输入类型

非反相

输出数

1

输出类型

P 通道

运行时间—最大值

450 us

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PDF Datasheet 数据手册内容提取

Product Sample & Technical Tools & Support & Folder Buy Documents Software Community TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 TPS22932B Low Input Voltage, Ultralow rON Load Switch With Configurable Enable Logic and Controlled Slew-Rate 1 Features 3 Description • InputVoltage:1.1Vto3.6V The TPS22932B device is a low rON load switch with 1 controlled turnon. The device contains a P-channel • UltralowON-Resistance MOSFET that can operate over an input voltage – rON =55mΩ atVIN =3.6V rangeof1.1Vto3.6V. – r =65mΩ atV =2.5V ON IN The switch is controlled by eight patterns of 3-bit – r =75mΩ atV =1.8V input. The user can choose the logic functions MUX, ON IN – r =115mΩatV =1.2V AND, OR, NAND, NOR, inverter, and noninverter. All ON IN inputs can be connected to V or GND. The control • 500-mAMaximumContinuousSwitchCurrent IN pins can be connected to low-voltage GPIOs allowing • QuiescentCurrent< 1μA the switch to be controlled by either 1.2-V, 1.8-V, 2.5- • ShutdownCurrent <1 μA V, or 3.3-V logic signals while keeping extremely low quiescentcurrent. • LowControlThresholdAllowsUseof1.2-V,1.8-V, 2.5-V,and3.3-VLogic A 120-Ω on-chip load resistor is available for output • ConfigurableEnableLogic quick discharge when the switch is turned off. The rise time (slew rate) of the device is internally • ControlledSlewRatetoAvoidInrushCurrents: controlled to avoid inrush current: the rise time of 165μsat1.8V TPS22932Bis165 μs. • Six-TerminalWaferChipScalePackage(DSBGA) TPS22932B is available in a space-saving 6-pin • ESDPerformanceTestedPerJESD22 DSBGA (YFP with 0.4-mm pitch). The device is – 2000-VHuman-BodyModel characterized for operation over the free-air (A114-B,ClassII) temperaturerangeof –40°Cto85°C. – 1000-VCharged-DeviceModel(C101) DeviceInformation(1) 2 Applications PARTNUMBER PACKAGE BODYSIZE(NOM) TPS22932B DSBGA(6) 0.80mm×1.20mm • PDAs (1) For all available packages, see the orderable addendum at • CellPhones theendofthedatasheet. • GPSDevices • MP3Players • DigitalCameras • PeripheralPorts • PortableInstrumentation TypicalApplication LOAD V V VBATT SMPS IN OUT (see Note A) ON1 CIN= 1µF CL ON2 TPS22932B CL RL ON3 GND GND GND A. Switched-modepowersupply 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com Table of Contents 1 Features.................................................................. 1 8 ParameterMeasurementinformation................13 2 Applications........................................................... 1 9 DetailedDescription............................................ 14 3 Description............................................................. 1 9.1 Overview.................................................................14 4 RevisionHistory..................................................... 2 9.2 FunctionalBlockDiagram.......................................14 5 DeviceComparisonTable..................................... 3 9.3 FeatureDescription.................................................14 9.4 DeviceFunctionalModes........................................15 6 PinConfigurationandFunctions......................... 3 10 ApplicationandImplementation........................ 17 7 Specifications......................................................... 3 10.1 ApplicationInformation..........................................17 7.1 AbsoluteMaximumRatings......................................3 10.2 TypicalApplication ...............................................17 7.2 ESDRatings..............................................................3 11 PowerSupplyRecommendations..................... 19 7.3 RecommendedOperatingConditions.......................4 7.4 ThermalInformation..................................................4 12 Layout................................................................... 19 7.5 ElectricalCharacteristics...........................................4 12.1 LayoutGuidelines.................................................19 7.6 SwitchingCharacteristics,1.2V...............................5 12.2 LayoutExample....................................................20 7.7 SwitchingCharacteristics,1.5V...............................5 13 DeviceandDocumentationSupport................. 21 7.8 SwitchingCharacteristics,1.8V...............................6 13.1 CommunityResources..........................................21 7.9 SwitchingCharacteristics,2.5V...............................6 13.2 Trademarks...........................................................21 7.10 SwitchingCharacteristics,3V................................6 13.3 ElectrostaticDischargeCaution............................21 7.11 SwitchingCharacteristics,3.3V.............................7 13.4 Glossary................................................................21 7.12 TypicalCharacteristics............................................8 14 Mechanical,Packaging,andOrderable Information........................................................... 21 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionB(August2013)toRevisionC Page • AddedPinConfigurationandFunctionssection,ESDRatingstable,FeatureDescriptionsection,DeviceFunctional Modes,ApplicationandImplementationsection,PowerSupplyRecommendationssection,Layoutsection,Device andDocumentationSupportsection,andMechanical,Packaging,andOrderableInformationsection .............................. 1 • MovedOperatingfree-airtemperaturevaluesinAbsoluteMaximumRatingstotheRecommendedOperatingConditions 4 ChangesfromRevisionA(November2009)toRevisionB Page • Alignedpackagedescriptionthroughoutdatasheet.............................................................................................................. 1 2 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 5 Device Comparison Table DEVICE r at1.8V SLEWRATE QUICKOUTPUT MAXOUTPUT ENABLE ON (TYP) (TYPat3.3V) DISCHARGE(1) CURRENT TPS22932B 75mΩ 165µs Yes 500mA ActiveHigh (1) Thisfeaturedischargestheoutputoftheswitchtogroundthrougha120-Ωresistor,preventingtheoutputfromfloating. 6 Pin Configuration and Functions YFPPackage 6-PinDSBGA TopView C C B B A A 2 1 1 2 Laser MarkingView BumpView PinFunctions PIN I/O DESCRIPTION NO. NAME A1 V O Switchoutput OUT A2 V I Switchinput,bypassthisinputwithaceramiccapacitortoground IN B1 GND — Ground B2 ON1 C2 ON2 I Switchcontrolinput,activehigh-Donotleavefloating C1 ON3 7 Specifications 7.1 Absolute Maximum Ratings overoperatingfree-airtemperaturerange(unlessotherwisenoted) (1) MIN MAX UNIT V Inputvoltage –0.3 4 V IN V Outputvoltage V +0.3 V OUT IN I Maximumcontinuousswitchcurrent 500 mA MAX T Maximumleadtemperature(10-ssolderingtime) 300 °C lead T Storagetemperature –65 150 °C stg (1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. 7.2 ESD Ratings VALUE UNIT Human-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±2000 V(ESD) Electrostaticdischarge Charged-devicemodel(CDM),perJEDECspecificationJESD22- ±1000 V C101(2) (1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess. (2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess. Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com 7.3 Recommended Operating Conditions overoperatingfree-airtemperaturerange(unlessotherwisenoted) MIN MAX UNIT I Outputcurrent 500 mA OUT V Inputvoltage 1.1 3.6 V IN V Outputvoltage V OUT IN C Inputcapacitor 1(1) μF IN T Operatingfree-airtemperature –40 85 °C A (1) SeeApplicationInformation. 7.4 Thermal Information TPS22932B THERMALMETRIC(1) YFP(DSBGA) UNIT 6PINS R Junction-to-ambientthermalresistance 125.1 °C/W θJA R Junction-to-case(top)thermalresistance 1.4 °C/W θJC(top) R Junction-to-boardthermalresistance 26 °C/W θJB ψ Junction-to-topcharacterizationparameter 0.6 °C/W JT ψ Junction-to-boardcharacterizationparameter 26 °C/W JB R Junction-to-case(bottom)thermalresistance — °C/W θJC(bot) (1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication report,SPRA953. 7.5 Electrical Characteristics V =1.1Vto3.6V,T =–40°Cto85°C(unlessotherwisenoted) IN A PARAMETER TESTCONDITIONS T MIN TYP(1) MAX UNIT A V =1.1V 140 275 IN I Quiescentcurrent I =0 V =1.8V Full 280 500 nA IN OUT IN V =3.6V 860 920 IN V =1.1V 80 225 IN I OFF-statesupplycurrent V =GND,OUT=Open V =1.8V Full 125 300 nA IN(OFF) ON IN V =3.6V 340 650 IN V =1.1V 80 225 IN I OFF-stateswitchcurrent V =GND,V =0 V =1.8V Full 125 300 nA IN(LEAKAGE) ON OUT IN V =3.6V 340 650 IN 25°C 55 70 V =3.6V IN Full 85 25°C 65 80 V =2.5V IN Full 100 25°C 75 90 r ON-stateresistance I =–200mA V =1.8V mΩ ON OUT IN Full 110 25°C 115 130 V =1.2V IN Full 155 25°C 135 150 V =1.1V IN Full 170 r Outputpulldownresistance V =3.3V,V =0,I =30mA 25°C 75 120 Ω PD IN ON OUT ON-stateinputleakage I V =1.1Vto3.6VorGND Full 1 μA ON current ON ControlInputs(ON1,ON2,ON3) (1) TypicalvaluesareatthespecifiedV andT =25°C. IN A 4 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 Electrical Characteristics (continued) V =1.1Vto3.6V,T =–40°Cto85°C(unlessotherwisenoted) IN A PARAMETER TESTCONDITIONS T MIN TYP(1) MAX UNIT A Inputleakagecurrent V =1.1Vto3.6VorGND Full 1 μA IN V Controlinputvoltage Full 3.6 V ON Positive-goinginputvoltage VIN=1.1Vto1.8V 0.5 0.8 V Full V T+ threshold V =1.8Vto3.6V 0.6 0.9 IN Negative-goinginputvoltage VIN=1.1Vto1.8V 0.2 0.6 V Full V T– threshold V =1.8Vto3.6V 0.3 0.7 IN ΔV Hysteresis(V –V ) V =1.1Vto3.6V Full 0.2 0.6 V T T+ T– IN 7.6 Switching Characteristics, 1.2 V V =1.2V,R =120Ω,T =25°C(unlessotherwisenoted) IN L_CHIP A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT C =0.1μF 350 L t Turnontime R =500Ω C =1μF 390 μs ON L L C =3μF 450 L C =0.1μF 30 L t Turnofftime R =500Ω C =1μF 70 μs OFF L L C =3μF 160 L C =0.1μF 240 L t V risetime R =500Ω C =1μF 240 μs r OUT L L C =3μF 260 L C =0.1μF 20 L t V falltime R =500Ω C =1μF 150 μs f OUT L L C =3μF 450 L 7.7 Switching Characteristics, 1.5 V V =1.5V,R =120Ω,T =25°C(unlessotherwisenoted) IN L_CHIP A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT C =0.1μF 290 L t Turnontime R =500Ω C =1μF 320 μs ON L L C =3μF 350 L C =0.1μF 30 L t Turnofftime R =500Ω C =1μF 70 μs OFF L L C =3μF 150 L C =0.1μF 205 L t V risetime R =500Ω C =1μF 205 μs r OUT L L C =3μF 220 L C =0.1μF 18 L t V falltime R =500Ω C =1μF 145 μs f OUT L L C =3μF 445 L Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com 7.8 Switching Characteristics, 1.8 V V =1.8V,R =120Ω,T =25°C(unlessotherwisenoted) IN L_CHIP A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT C =0.1μF 215 L t Turnontime R =500Ω C =1μF 240 μs ON L L C =3μF 260 L C =0.1μF 24 L t Turnofftime R =500Ω C =1μF 60 μs OFF L L C =3μF 142 L C =0.1μF 165 L t V risetime R =500 C =1μF 165 μs r OUT L L C =3μF 175 L C =0.1μF 18 L t V falltime R =500Ω C =1μF 145 μs f OUT L L C =3μF 440 L 7.9 Switching Characteristics, 2.5 V V =2.5V,R =120Ω,T =25°C(unlessotherwisenoted) IN L_CHIP A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT C =0.1μF 185 L t Turnontime R =500Ω C =1μF 205 μs ON L L C =3μF 225 L C =0.1μF 2 L t Turnofftime R =500Ω C =1μF 60 μs OFF L L C =3μF 140 L C =0.1μF 145 L t V risetime R =500Ω C =1μF 150 μs r OUT L L C =3μF 160 L C =0.1μF 18 L t V falltime R =500Ω C =1μF 147 μs f OUT L L C =3μF 445 L 7.10 Switching Characteristics, 3 V V =3V,R =120Ω,T =25°C(unlessotherwisenoted) IN L_CHIP A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT C =0.1μF 170 L t Turnontime R =500Ω C =1μF 190 μs ON L L C =3μF 210 L C =0.1μF 2 L t Turnofftime R =500Ω C =1μF 60 μs OFF L L C =3μF 140 L C =0.1μF 140 L t V risetime R =500Ω C =1μF 140 μs r OUT L L C =3μF 150 L C =0.1μF 17 L t V falltime R =500Ω C =1μF 148 μs f OUT L L C =3μF 450 L 6 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 7.11 Switching Characteristics, 3.3 V V =3.3V,R =120Ω,T =25°C(unlessotherwisenoted) IN L_CHIP A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT C =0.1μF 160 L t Turnontime R =500Ω C =1μF 175 μs ON L L C =3μF 195 L C =0.1μF 20 L t Turnofftime R =500Ω C =1μF 55 μs OFF L L C =3μF 135 L C =0.1μF 135 L t V risetime R =500Ω C =1μF 135 μs r OUT L L C =3μF 145 L C =0.1μF 17 L t V falltime R =500Ω C =1μF 148 μs f OUT L L C =3μF 450 L Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com 7.12 Typical Characteristics 0.6 0.08 V = 1.1 V IN 0.07 0.5 V = 1.2 V IN 0.06 ΩN-State Resistance, r()ON000...432 V(V)Drop 000...000345 VIN= 3V.6IN V= 2.5 VVIN= 1.8 V O 0.02 0.1 0.01 0.00 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 0.000.050.100.150.20 0.250.300.350.400.450.50 InputVoltage,VIN(V) ILoad(A) Figure1.rONvsVIN Figure2.VoltageDropvsLoadCurrent 0.070 250 s) hm 0.065 A) 200 o n ( ( e,Ron 0.060 nt, IIN150 c e stan 0.055 Curr esi nt 100 R 0.050 e ate esc N-St 0.045 Qui 50 O 0.040 0 -40 -15 10 35 60 85 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Temperature(°C) Input Voltage,V (V) IN VIN=3.3V ON2=VIN,ON1–ON3=0V,Iout=0 Figure3.rONvsTA Figure4.QuiescentCurrentvsVIN 250 100 90 A) 200 80 (n A) Current, IIN150 Current (n 567000 nt 100 F) 40 e F esc N(O 30 Qui 50 II 20 10 0 0 –40 25 85 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Temperature (°C) InputVoltage,V (V) IN VIN=3.3V,ON2=VIN,ON1–ON3=0V,Iout=0 ON1–ON2–ON3=0V Figure5.QuiescentCurrentvsTA Figure6.IIN(OFF)vsVIN 8 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 Typical Characteristics (continued) 250 100 90 200 A) 80 urrent, (nA) 150 Current, (n 567000 C e) F)100 ag 40 F k IN(O 50 IIN(Lea 2300 10 0 0 –40 25 85 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Temperature (°C) InputVoltage,V (V) IN V =3.3V,ON1–ON2–ON3=0V ON1–ON2–ON3=0V,V =0 IN out Figure7.I vsTemperature Figure8. I vsV IN(OFF) IN(Leakage) IN 250 4.0 3.5 VIN= 3.6V A) 200 3.0 VIN= 3.3V n VIN= 3V urrent ( 150 V) 22..05 VIN= 2.5V Ce) (out 1.5 VIVNIN= =1. 51.V8V akag 100 V 1.0 VIN= 1.2V Le VIN= 1.1V IIN( 50 0.5 0.0 0 –0.5 –40 25 85 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Temperature (°C) InputVoltage,VON(V) V =3.3V,ON1–ON2–ON3=0V IN Figure9.I vsTemperature Figure10.ON-InputThreshold IN(Leakage) 200 160 180 140 160 120 t 140 rise µs) 120 tON µs) 100 ( ( t/tONOFF10800 t/trisefall 6800 60 t 40 tfall OFF 40 20 20 0 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 Temperature (°C) Temperature (°C) C =0.1µF,R =500Ω,V =3.3V C =0.1µF,R =500Ω,V =3.3V L L IN L L IN Figure11. t /t vsTemperature Figure12. t /t vsTemperature ON OFF rise fall Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com Typical Characteristics (continued) 3.5 7.0 3.5 350 3.2 6.5 3.2 320 6.0 I 2.8 IOUT 5.5 V) 2.8 OUT 280 e (V) 2.4 54..05 mA) ge ( 2.4 240 mA) ntrol Input Voltag 2101....8062 VON 4321321.......0000555 Output Current ( ontrol Input Volta 2110....0628 VON 11262080000 Output Current ( o 0.4 0.5 C 0.4 40 C 0 0.0 –0.5 0.0 0 –0.5 –1.0 –0.5 –50 –200 –100 0 100 200 300 400 500 600 700 800 –200 –100 0 100 200 300 400 500 600 700 800 Time (µs) Time (µs) C =3µF,R =500Ω,V =3.3V C =0.1µF,R =10Ω,V =3.3V L L IN L L IN Figure13.t Response Figure14.t Response ON ON 3.5 7.0 3.5 350 3.2 6.5 3.2 320 6.0 2.8 IOUT 5.5 2.8 IOUT 280 e (V) 2.4 54..05 mA) e (V) 2.4 240 mA) ntrol Input Voltag 2101....8062 VON 4321321.......0000555 Output Current ( ntrol Input Voltag 2101....8062 VON 11262080000 Output Current ( Co 0.4 0.5 Co 0.4 40 0 0.0 –0.5 0.0 0.0 –0.5 –1.0 –0.5 –50 –200 –100 0 100 200 300 400 500 600 700 800 –1.0 –0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Time (µs) Time (ms) CL=3µF,RL=500Ω,VIN=3.3V CL=3µF,RL=10Ω,VIN=3.3V Figure15.tONResponse Figure16.tONResponse 3.5 7.0 3.5 140 3.2 6.5 3.2 6.0 120 2.8 5.5 2.8 IOUT ntrol Input Voltage (V) 22101.....84062 VON IOUT 453214321.........000005555 Output Current (mA) ntrol Input Voltage (V) 22101.....84062 VON 10648200000 Output Current (mA) Co 0.4 0.5 Co 0.4 0 0 0.0 –0.5 0.0 –10 –0.5 –1.0 –0.5 –20 –400 –200 0 200 400 600 800 1000 1200 1400 1600 –1.0 –0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Time (µs) Time (ms) CL=0.1µF,RL=500Ω,VIN=1.2V CL=0.1µF,RL=10Ω,VIN=1.2V Figure17.tONResponse Figure18.tONResponse 10 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 Typical Characteristics (continued) 3.5 7.0 3.5 140 3.2 6.5 3.2 6.0 120 2.8 5.5 2.8 ntrol Input Voltage (V) 22101.....84062 VON IOUT 453214321.........000005555 Output Current (mA) ntrol Input Voltage (V) 22101.....84062 VON IOUT 10648200000 Output Current (mA) Co 0.4 0.5 Co 0.4 0 0 0.0 –0.5 0.0 –10 –0.5 –1.0 –0.5 –20 –400 –200 0 200 400 600 800 1000 1200 1400 1600 –1.0 –0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Time (µs) Time (ms) CL=3µF,RL=500Ω,VIN=1.2V CL=3µF,RL=10Ω,VIN=1.2V Figure19.tONResponse Figure20.tONResponse 5.0 10.0 5.0 500 4.5 9.0 4.5 450 V) 4.0 8.0 V) 4.0 400 nput Voltage ( 123123......000555 VON IOUT 234567......000000 urrent (mA) nput Voltage ( 123123......000555 IOUT 112233050505000000 urrent (mA) ontrol I–000...505 –011..00.0 utput C ontrol I–000...505 VON –055.000 utput C C–1.0 –2.0 O C–1.0 –100 O –1.5 –3.0 –1.5 –150 –2.0 –4.0 –2.0 –200 –2.5 –5.0 –2.5 –250 –3.0 –6.0 –3.0 –300 –10 0 10 20 30 40 50 60 70 80 90 –10 0 10 20 30 40 50 60 70 80 90 Time (µs) Time (µs) C =0.1µF,R =500Ω,V =3.3V C =0.1µF,R =11Ω,V =3.3V L L IN L L IN Figure21.t Response Figure22.t Response OFF OFF 5.0 10.0 5.0 500 4.5 9.0 4.5 450 V) 4.0 8.0 V) 4.0 400 nput Voltage ( 123123......000555 IOUT 234567......000000 urrent (mA) nput Voltage ( 123123......000555 IOUT 112233050505000000 urrent (mA) ontrol I–000...505 VON –011..00.0 utput C ontrol I–000...505 VON –055.000 utput C C–1.0 –2.0 O C–1.0 –100 O –1.5 –3.0 –1.5 –150 –2.0 –4.0 –2.0 –200 –2.5 –5.0 –2.5 –250 –3.0 –6.0 –3.0 –300 –200 0 200 400 600 800 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 200 250 300 350 400 450 Time (µs) Time (µs) C =3µF,R =500Ω,V =3.3V C =3µF,R =11Ω,V =3.3V L L IN L L IN Figure23.t Response Figure24.t Response OFF OFF Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com Typical Characteristics (continued) 5.0 5.0 5.0 250 4.5 4.5 4.5 220 Control Input Voltage (V)––10012340123...........05000005555 VON IOUT ––10012340123...........05000005555 Output Current (mA) Control Input Voltage (V)––10012340123...........05000005555 VON IOUT 1––111210246842402608.0000000000000 Output Current (mA) –1.5 –1.5 –1.5 –60 –80 –2.0 –2.0 –2.0 –100 –2.5 –2.5 –2.5 –120 –3.0 –3.0 –3.0 –150 –10 0 10 20 30 40 50 60 70 80 90 –10 0 10 20 30 40 50 60 70 80 90 Time (µs) Time (µs) CL=0.1µF,RL=500Ω,VIN=1.2V CL=0.1µF,RL=11Ω,VIN=1.2V Figure25.tOFFResponse Figure26.tOFFResponse 5.0 5.0 5.0 250 4.5 4.5 4.5 220 Control Input Voltage (V)––10012340123...........05000005555 VOIONUT ––10012340123...........05000005555 Output Current (mA) Control Input Voltage (V)––10012340123...........05000005555 VONIOUT 1––111210246842402608.0000000000000 Output Current (mA) –1.5 –1.5 –1.5 –60 –80 –2.0 –2.0 –2.0 –100 –2.5 –2.5 –2.5 –120 –3.0 –3.0 –3.0 –150 –200 0 200 400 600 800 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 200 250 300 350 400 450 Time (µs) Time (µs) CL=3µF,RL=500Ω,VIN=1.2V CL=3µF,RL=11Ω,VIN=1.2V Figure27.tOFFResponse Figure28.tOFFResponse 12 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 8 Parameter Measurement information V IN V OUT ON(A) C R L L + OFF – DUT C =1 µF IN GND GND GND A. t andt ofthecontrolsignalis100ns. rise fall Figure29. TestCircuit 1.8 V V ON VON VON/2 VON/2 tr tf 0 V 0 V t t ON OFF V 90% 90% OUT VOH 10% 10% V V /2 V /2 OUT IN IN V OL A. t andt ofthecontrolsignalis100ns. rise fall Figure30. t /t Waveforms ON OFF Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com 9 Detailed Description 9.1 Overview TPS22932B is a single-channel, low r load switch with controlled turnon. The device contains a low r P- ON ON channel MOSFET that can operate over an input voltage range of 1.1 V to 3.6 V. The switch is controlled by eight patterns of 3-bit input. The user can choose the logic functions MUX, AND, OR, NAND, NOR, inverter, and noninverter. All inputs can be connected to VIN or GND. The control pins can be connected to low-voltage GPIOs allowing it to be controlled by either 1.2-V, 1.8-V, 2.5-V, or 3.3-V logic signals while keeping extremely low quiescent current. A 120-Ω on-chip load resistor is available for output quick discharge when the switch is turnedoff.Therisetime(slewrate)ofthedeviceisinternallycontrolledtoavoidinrushcurrent. 9.2 Functional Block Diagram A2 V IN Turn-OnSlewRate ControlledDriver B2 Y Control ON1 Logic C2 Configurable ON2 Logic C1 ON3 ESD Protection A1 V OUT OutputDischarge B1 GND 9.3 Feature Description 9.3.1 ConfigurableLogicFunction The switch is controlled by eight patterns of 3-bit input. The user can choose the logic functions MUX, AND, OR, NAND, NOR, inverter, and noninverter. All inputs can be connected to VIN or GND. The control pins can be connected to low-voltage GPIOs allowing it to be controlled by either 1.2-V, 1.8-V, 2.5-V, or 3.3-V logic signals whilekeepingextremelylowquiescentcurrent. 9.3.2 QuickOutputDischarge The TPS22932B includes the Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge resistance with a typical value of 120 Ω is connected between the output and ground. This resistance pulls down theoutputandpreventsitfromfloatingwhenthedeviceisdisabled. 14 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 9.4 Device Functional Modes 9.4.1 LogicConfigurations Table1.ConfigurableLogicFunctionTable INPUTS SWITCHCONTROL ON3 ON2 ON1 Y L L L OFF L L H OFF L H L ON L H H ON H L L OFF H L H ON H H L OFF H H H ON ON1 4 Y ON2 ON3 Figure31. LogicDiagram(PositiveLogic) Table2.FunctionSelectionTable LOGICFUNCTION FIGURENO. 2-to-1dataselector Figure32 2-inputANDgate Figure33 2-inputORgatewithoneinvertedinput Figure34 2-inputNANDgatewithoneinvertedinput Figure34 2-inputANDgatewithoneinvertedinput Figure35 2-inputNORgatewithoneinvertedinput Figure35 2-inputORgate Figure36 Inverter Figure37 Noninvertedbuffer Figure38 A/B ON3 ON2 A A/B A ON3 ON2 GND ON1 B GND ON1 B A Y GND VOUT VIN A GND VOUT VIN Y B B BumpView BumpView Figure32. 2-to-1DataSelector Figure33. 2-InputANDGate Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com A A ON3 ON2 B Y A ON3 ON2 B A Y GND ON1 B GND ON1 B A Y GND VOUT VIN VIN/VCC B GND VOUT VIN VIN/VCC BumpView BumpView Figure34. 2-InputORGateWithOneInverted Figure36. 2-InputORGate Input,2-InputNANDGateWithOneInvertedInput A ON3 ON2 A ON3 ON2 B A Y B A Y GND ON1 GND ON1 GND VOUT VIN A Y GND VOUT VIN VIN/VCC B BumpView BumpView Figure35. 2-InputANDGateWithOneInverted Figure37. Inverter Input,2-InputNORGateWithOneInvertedInput ON3 ON2 A A Y GND ON1 GND VOUT VIN BumpView Figure38. NoninvertedBuffer 16 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validateandtesttheirdesignimplementationtoconfirmsystemfunctionality. 10.1 Application Information 10.1.1 ONandOFFControl The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long as there is no fault. ON is active HI and has a low threshold making it capable of interfacing with low voltage signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller with1.2-V,1.8-V,2.5-V,or3.3-VGPIOs. 10.1.2 InputCapacitor To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a discharged load capacitor or short-circuit, a capacitor must be placed between V and GND . A 1-μF ceramic IN capacitor, C , placed close to the pins is usually sufficient. Higher values of C can be used to further reduce IN IN the voltage drop during higher current application. When switching a heavy load, TI recommends to have an inputcapacitorabout10ormoretimeshigherthantheoutputcapacitortoavoidanysupplydrop. 10.1.3 OutputCapacitor Due to the integral body diode in the PMOS switch, a C greater than C is highly recommended. A C greater IN L L than C can cause V to exceed V when the system supply is removed. This could result in current flow IN OUT IN throughthebodydiodefromV toV . OUT IN 10.2 Typical Application LOAD V V VBATT SMPS IN OUT (see Note A) ON1 CIN= 1µF CL ON2 TPS22932B CL RL ON3 GND GND GND A. Switched-modepowersupply Figure39. TypicalApplication 10.2.1 DesignRequirements Forthisexample,followthedesignparameterslistedinTable3. Table3.DesignParameters DESIGNPARAMETERS EXAMPLEVALUE V 3.3V IN C 4.7µF L MaximumAcceptableInrushCurrent 150mA Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com 10.2.2 DetailedDesignProcedure 10.2.2.1 VINtoVOUTVoltageDrop The VIN to VOUT voltage drop in the device is determined by the r of the device and the load current. The r ON ON of the device depends upon the VIN condition of the device. Refer to the r specification of the device in the ON Electrical Characteristics table of this data sheet. When the r of the device is determined based upon the VIN ON conditions,useEquation1tocalculatetheVINtoVOUTvoltagedrop: ΔV=I ×r LOAD ON where • ΔV=VoltagedropfromVINtoVOUT • I =Loadcurrent LOAD • r =ON-resistanceofthedeviceforaspecificV ON IN • AnappropriateI mustbechosensuchthattheI specificationofthedeviceisnotviolated. (1) LOAD MAX 10.2.2.2 ManagingInrushCurrent Whentheswitchisenabled,theoutputcapacitorsmustbechargedupfrom0-VtoV .Thischargearrivesinthe IN formofinrushcurrent.Inrushcurrentcanbecalculatedusingthefollowingequation: dv InrushCurrent=C´ dt where • C=Outputcapacitance dv =Outputslewrate • dt (2) The TPS22932B offers a very slow controlled rise time for minimizing inrush current. This device can be selected based upon the maximum acceptable slew rate which can be calculated using the design requirements and the inrush current equation. An output capacitance of 4.7 μF will be used because the amount of inrush increases withoutputcapacitance: dv 150mA= 4.7mF ´ dt (3) dv =31.9 V/ms dt (4) Toensureaninrushcurrentoflessthan150mA,adevicewithaslewratelessthan31.9V/msmustbeused. The TPS22932B has a typical rise time of 145 μs at 3.3 V. This results in a slew rate of 22.8 V/ms which meets therequirement. 18 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 10.2.3 ApplicationCurve Figure40. TPS22932BInrushCurrentWith4.7-µFOutputCapacitor 11 Power Supply Recommendations The device is designed to operate with a V range of 1.1 V to 3.6 V. This supply must be well regulated and IN placed as close to the device terminal as possible with the recommended 1-μF bypass capacitor. If the supply is located more than a few inches from the device terminals, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or ceramiccapacitorof10μFmaybesufficient. 12 Layout 12.1 Layout Guidelines For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal and short-circuit operation. Using wide traces for V , V , and GND will help minimize the parasitic IN OUT electricaleffectsalongwithminimizingthecasetoambientthermalimpedance. Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:TPS22932B

TPS22932B SLVS802C–AUGUST2009–REVISEDMAY2015 www.ti.com 12.2 Layout Example VIAto Power Ground Plane To GPIO control To GPIO ON2 ON3 control To GPIO ON1 GND control V Bypass OUT Capacitor VIN VOUT V Bypass IN Capacitor Figure41. LayoutExample 20 SubmitDocumentationFeedback Copyright©2009–2015,TexasInstrumentsIncorporated ProductFolderLinks:TPS22932B

TPS22932B www.ti.com SLVS802C–AUGUST2009–REVISEDMAY2015 13 Device and Documentation Support 13.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 13.2 Trademarks E2EisatrademarkofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 13.3 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 13.4 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. Copyright©2009–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:TPS22932B

PACKAGE OPTION ADDENDUM www.ti.com 22-Mar-2017 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) TPS22932BYFPR ACTIVE DSBGA YFP 6 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 (483 ~ 485) & no Sb/Br) TPS22932BYFPT ACTIVE DSBGA YFP 6 250 TBD Call TI Call TI -40 to 85 483 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 22-Mar-2017 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 18-Jan-2020 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) TPS22932BYFPR DSBGA YFP 6 3000 178.0 9.2 0.89 1.29 0.62 4.0 8.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 18-Jan-2020 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) TPS22932BYFPR DSBGA YFP 6 3000 220.0 220.0 35.0 PackMaterials-Page2

PACKAGE OUTLINE YFP0006 DSBGA - 0.5 mm max height SCALE 10.000 DIE SIZE BALL GRID ARRAY B E A BALL A1 CORNER D C 0.5 MAX SEATING PLANE 0.19 0.13 BALL TYP 0.05 C 0.4 TYP SYMM C D: Max = 1.19 mm, Min = 1.13 mm 0.8 TYP B SYMM E: Max = 0.79 mm, Min = 0.73 mm 0.4 TYP A 0.25 6X 0.21 1 2 0.015 C A B 4223410/A 11/2016 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. www.ti.com

EXAMPLE BOARD LAYOUT YFP0006 DSBGA - 0.5 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP 6X ( 0.23) 1 2 A (0.4) TYP B SYMM C SYMM LAND PATTERN EXAMPLE SCALE:50X ( 0.23) 0.05 MAX 0.05 MIN METAL UNDER METAL SOLDER MASK SOLDER MASK ( 0.23) OPENING SOLDER MASK OPENING NON-SOLDER MASK SOLDER MASK DEFINED DEFINED (PREFERRED) SOLDER MASK DETAILS NOT TO SCALE 4223410/A 11/2016 NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009). www.ti.com

EXAMPLE STENCIL DESIGN YFP0006 DSBGA - 0.5 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP 6X ( 0.25) (R0.05) TYP 1 2 A (0.4) TYP B SYMM METAL TYP C SYMM SOLDER PASTE EXAMPLE BASED ON 0.1 mm THICK STENCIL SCALE:50X 4223410/A 11/2016 NOTES: (continued) 4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. www.ti.com

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