ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 单 > TPN2R703NL,L1Q
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TPN2R703NL,L1Q产品简介:
ICGOO电子元器件商城为您提供TPN2R703NL,L1Q由Toshiba America Electronic Components, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TPN2R703NL,L1Q价格参考。Toshiba America Electronic Components, Inc.TPN2R703NL,L1Q封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 30V 45A(Tc) 700mW(Ta),42W(Tc) 8-TSON Advance(3.3x3.3)。您可以下载TPN2R703NL,L1Q参考资料、Datasheet数据手册功能说明书,资料中有TPN2R703NL,L1Q 详细功能的应用电路图电压和使用方法及教程。
TPN2R703NL,L1Q 是 Toshiba Semiconductor and Storage 生产的一款单通道 MOSFET(金属氧化物场效应晶体管)。这款 MOSFET 属于 N 沟道增强型,具有低导通电阻和快速开关特性,适用于多种电力电子应用。以下是该型号的一些典型应用场景: 1. 电源管理 TPN2R703NL,L1Q 可用于各种电源管理电路中,例如 DC-DC 转换器、线性稳压器等。其低导通电阻有助于减少功率损耗,提高转换效率,特别适合需要高效能的电池供电设备,如笔记本电脑、智能手机和平板电脑。 2. 电机驱动 在小型电机驱动应用中,这款 MOSFET 可以作为开关元件,控制电机的启动、停止和速度调节。其快速开关特性和低导通电阻使得它在电机驱动电路中表现出色,能够有效降低发热,延长设备寿命。 3. 负载开关 该型号 MOSFET 还可以用作负载开关,用于保护电路免受过流、短路等故障的影响。它能够迅速切断电流路径,防止下游电路损坏,广泛应用于消费电子产品、工业控制系统等领域。 4. 信号切换 在通信设备和其他需要高频信号切换的应用中,TPN2R703NL,L1Q 的快速开关速度使其成为理想的信号切换元件。它可以实现高速信号的精确控制,确保信号传输的稳定性和可靠性。 5. 电池保护 在电池管理系统中,MOSFET 可以用作电池充放电的控制开关。TPN2R703NL,L1Q 的低导通电阻有助于减少电池充放电过程中的能量损失,同时其快速响应能力可以有效防止电池过充或过放,保护电池安全。 6. 汽车电子 在汽车电子系统中,如电动座椅、车窗升降器、雨刷电机等,TPN2R703NL,L1Q 可以作为功率开关,控制这些设备的运行。其耐高温和抗振性能使其能够在恶劣的汽车环境中稳定工作。 总的来说,TPN2R703NL,L1Q 由于其优异的电气性能和可靠性,广泛应用于消费电子、工业控制、汽车电子等多个领域,特别是在需要高效能、低功耗和高可靠性的场合表现尤为突出。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 30V 45A 8-TSON |
产品分类 | FET - 单 |
FET功能 | 逻辑电平门 |
FET类型 | MOSFET N 通道,金属氧化物 |
品牌 | Toshiba Semiconductor and Storage |
数据手册 | http://www.semicon.toshiba.co.jp/info/docget.jsp?type=datasheet&lang=en&pid=TPN2R703NL |
产品图片 | |
产品型号 | TPN2R703NL,L1Q |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同Id时的Vgs(th)(最大值) | 2.3V @ 300µA |
不同Vds时的输入电容(Ciss) | 2100pF @ 15V |
不同Vgs时的栅极电荷(Qg) | 21nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 2.7 毫欧 @ 22.5A,10V |
供应商器件封装 | 8-TSON高级 |
其它名称 | TPN2R703NL,L1QTR |
功率-最大值 | 42W |
包装 | 带卷 (TR) |
安装类型 | 表面贴装 |
封装/外壳 | 8-PowerVDFN |
标准包装 | 5,000 |
漏源极电压(Vdss) | 30V |
特色产品 | http://www.digikey.cn/product-highlights/zh/umosh-mosfets/52364 |
电流-连续漏极(Id)(25°C时) | 45A (Tc) |
TPN2R703NL MOSFETs Silicon N-channel MOS (U-MOS-H) TTTTPPPPNNNN2222RRRR777700003333NNNNLLLL 1111.... AAAApppppppplllliiiiccccaaaattttiiiioooonnnnssss • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2222.... FFFFeeeeaaaattttuuuurrrreeeessss (1) High-speed switching (2) Small gate charge: Q = 5.2 nC (typ.) SW (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.3 mA) th DS D 3333.... PPPPaaaacccckkkkaaaaggggiiiinnnngggg aaaannnndddd IIIInnnntttteeeerrrrnnnnaaaallll CCCCiiiirrrrccccuuuuiiiitttt 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4444.... AAAAbbbbssssoooolllluuuutttteeee MMMMaaaaxxxxiiiimmmmuuuummmm RRRRaaaattttiiiinnnnggggssss ((((NNNNooootttteeee)))) ((((TTTTaaaa ==== 22225555 uuuunnnnlllleeeessssssss ooootttthhhheeeerrrrwwwwiiiisssseeee ssssppppeeeecccciiiiffffiiiieeeedddd)))) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V ±20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 90 A D Drain current (DC) (T = 25 ) (Note 1) I 45 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 200 DP Power dissipation (T = 25 ) P 42 W c D Power dissipation (t = 10 s) (Note 3) P 1.9 D Power dissipation (t = 10 s) (Note 4) P 0.7 D Single-pulse avalanche energy (Note 5) E 121 mJ AS Avalanche current I 45 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-08 1 2014-02-27 Rev.2.0
TPN2R703NL 5555.... TTTThhhheeeerrrrmmmmaaaallll CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 2.97 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 65.7 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 178 th(ch-a) Note 1:Ensure that the channel temperature does not exceed 150 . Note 2:Limited by silicon chip capability. Package limit is 45 A. Note 3:Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4:Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5:V = 24 V, T = 25 (initial), L = 46 µH, I = 45 A DD ch AR FFFFiiiigggg.... 5555....1111 DDDDeeeevvvviiiicccceeee MMMMoooouuuunnnntttteeeedddd oooonnnn aaaa GGGGllllaaaassssssss----EEEEppppooooxxxxyyyy FFFFiiiigggg.... 5555....2222 DDDDeeeevvvviiiicccceeee MMMMoooouuuunnnntttteeeedddd oooonnnn aaaa GGGGllllaaaassssssss----EEEEppppooooxxxxyyyy BBBBooooaaaarrrrdddd ((((aaaa)))) BBBBooooaaaarrrrdddd ((((bbbb)))) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-02-27 Rev.2.0
TPN2R703NL 6666.... EEEElllleeeeccccttttrrrriiiiccccaaaallll CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss 6666....1111.... SSSSttttaaaattttiiiicccc CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss ((((TTTTaaaa ==== 22225555 uuuunnnnlllleeeessssssss ooootttthhhheeeerrrrwwwwiiiisssseeee ssssppppeeeecccciiiiffffiiiieeeedddd)))) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = ±20 V, V = 0 V ±0.1 µA GSS GS DS Drain cut-off current I V = 30 V, V = 0 V 10 DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 30 V (BR)DSS D GS V I = 10 mA, V = -20 V 15 (BR)DSX D GS Gate threshold voltage V V = 10 V, I = 0.3 mA 1.3 2.3 th DS D Drain-source on-resistance R V = 4.5 V, I = 22.5 A 3.3 4.1 mΩ DS(ON) GS D V = 10 V, I = 22.5 A 2.2 2.7 GS D 6666....2222.... DDDDyyyynnnnaaaammmmiiiicccc CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss ((((TTTTaaaa ==== 22225555 uuuunnnnlllleeeessssssss ooootttthhhheeeerrrrwwwwiiiisssseeee ssssppppeeeecccciiiiffffiiiieeeedddd)))) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance C V = 15 V, V = 0 V, f = 1 MHz 1600 2100 pF iss DS GS Reverse transfer capacitance C 53 120 rss Output capacitance C 890 oss Gate resistance r 1.1 1.7 Ω g Switching time (rise time) t See Fig. 6.2.1 4.4 ns r Switching time (turn-on time) t 11.5 on Switching time (fall time) t 5.7 f Switching time (turn-off time) t 24 off FFFFiiiigggg.... 6666....2222....1111 SSSSwwwwiiiittttcccchhhhiiiinnnngggg TTTTiiiimmmmeeee TTTTeeeesssstttt CCCCiiiirrrrccccuuuuiiiitttt 6666....3333.... GGGGaaaatttteeee CCCChhhhaaaarrrrggggeeee CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss ((((TTTTaaaa ==== 22225555 uuuunnnnlllleeeessssssss ooootttthhhheeeerrrrwwwwiiiisssseeee ssssppppeeeecccciiiiffffiiiieeeedddd)))) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus Q V ≈ 15 V, V = 10 V, I = 45 A 21 nC g DD GS D gate-drain) V ≈ 15 V, V = 4.5 V, I = 45 A 9.5 DD GS D Gate-source charge 1 Q V ≈ 15 V, V = 10 V, I = 45 A 5.6 gs1 DD GS D Gate-drain charge Q 2.3 gd Gate switch charge Q 5.2 SW 6666....4444.... SSSSoooouuuurrrrcccceeee----DDDDrrrraaaaiiiinnnn CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss ((((TTTTaaaa ==== 22225555 uuuunnnnlllleeeessssssss ooootttthhhheeeerrrrwwwwiiiisssseeee ssssppppeeeecccciiiiffffiiiieeeedddd)))) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse drain current (pulsed) (Note 6) I 200 A DRP Diode forward voltage V I = 45 A, V = 0 V -1.2 V DSF DR GS Note 6:Ensure that the channel temperature does not exceed 150 . 3 2014-02-27 Rev.2.0
TPN2R703NL 7777.... MMMMaaaarrrrkkkkiiiinnnngggg FFFFiiiigggg.... 7777....1111 MMMMaaaarrrrkkkkiiiinnnngggg 4 2014-02-27 Rev.2.0
TPN2R703NL 8888.... CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss CCCCuuuurrrrvvvveeeessss ((((NNNNooootttteeee)))) FFFFiiiigggg.... 8888....1111 IIIIDDDD ---- VVVVDDDDSSSS FFFFiiiigggg.... 8888....2222 IIIIDDDD ---- VVVVDDDDSSSS FFFFiiiigggg.... 8888....3333 IIIIDDDD ---- VVVVGGGGSSSS FFFFiiiigggg.... 8888....4444 VVVVDDDDSSSS ---- VVVVGGGGSSSS FFFFiiiigggg.... 8888....5555 RRRRDDDDSSSS((((OOOONNNN)))) ---- IIIIDDDD FFFFiiiigggg.... 8888....6666 RRRRDDDDSSSS((((OOOONNNN)))) ---- TTTTaaaa 5 2014-02-27 Rev.2.0
TPN2R703NL FFFFiiiigggg.... 8888....7777 IIIIDDDDRRRR ---- VVVVDDDDSSSS FFFFiiiigggg.... 8888....8888 CCCCaaaappppaaaacccciiiittttaaaannnncccceeee ---- VVVVDDDDSSSS FFFFiiiigggg.... 8888....9999 VVVVtttthhhh ---- TTTTaaaa FFFFiiiigggg.... 8888....11110000 DDDDyyyynnnnaaaammmmiiiicccc IIIInnnnppppuuuutttt////OOOOuuuuttttppppuuuutttt CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss FFFFiiiigggg.... 8888....11111111 PPPPDDDD ---- TTTTaaaa FFFFiiiigggg.... 8888....11112222 PPPPDDDD ---- TTTTcccc ((((GGGGuuuuaaaarrrraaaannnntttteeeeeeeedddd MMMMaaaaxxxxiiiimmmmuuuummmm)))) ((((GGGGuuuuaaaarrrraaaannnntttteeeeeeeedddd MMMMaaaaxxxxiiiimmmmuuuummmm)))) 6 2014-02-27 Rev.2.0
TPN2R703NL FFFFiiiigggg.... 8888....11113333 rrrrtttthhhh ---- ttttwwww ((((GGGGuuuuaaaarrrraaaannnntttteeeeeeeedddd MMMMaaaaxxxxiiiimmmmuuuummmm)))) FFFFiiiigggg.... 8888....11114444 SSSSaaaaffffeeee OOOOppppeeeerrrraaaattttiiiinnnngggg AAAArrrreeeeaaaa ((((GGGGuuuuaaaarrrraaaannnntttteeeeeeeedddd MMMMaaaaxxxxiiiimmmmuuuummmm)))) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2014-02-27 Rev.2.0
TPN2R703NL PPPPaaaacccckkkkaaaaggggeeee DDDDiiiimmmmeeeennnnssssiiiioooonnnnssss Unit: mm Weight: 0.02 g (typ.) Package Name(s) TOSHIBA: 2-3X1S Nickname: TSON Advance 8 2014-02-27 Rev.2.0
TPN2R703NL RRRREEEESSSSTTTTRRRRIIIICCCCTTTTIIIIOOOONNNNSSSS OOOONNNN PPPPRRRROOOODDDDUUUUCCCCTTTT UUUUSSSSEEEE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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TTTTOOOOSSSSHHHHIIIIBBBBAAAA AAAASSSSSSSSUUUUMMMMEEEESSSS NNNNOOOO LLLLIIIIAAAABBBBIIIILLLLIIIITTTTYYYY FFFFOOOORRRR CCCCUUUUSSSSTTTTOOOOMMMMEEEERRRRSSSS'''' PPPPRRRROOOODDDDUUUUCCCCTTTT DDDDEEEESSSSIIIIGGGGNNNN OOOORRRR AAAAPPPPPPPPLLLLIIIICCCCAAAATTTTIIIIOOOONNNNSSSS.... • PPPPRRRROOOODDDDUUUUCCCCTTTT IIIISSSS NNNNEEEEIIIITTTTHHHHEEEERRRR IIIINNNNTTTTEEEENNNNDDDDEEEEDDDD NNNNOOOORRRR WWWWAAAARRRRRRRRAAAANNNNTTTTEEEEDDDD FFFFOOOORRRR UUUUSSSSEEEE IIIINNNN EEEEQQQQUUUUIIIIPPPPMMMMEEEENNNNTTTTSSSS OOOORRRR SSSSYYYYSSSSTTTTEEEEMMMMSSSS TTTTHHHHAAAATTTT RRRREEEEQQQQUUUUIIIIRRRREEEE EEEEXXXXTTTTRRRRAAAAOOOORRRRDDDDIIIINNNNAAAARRRRIIIILLLLYYYY HHHHIIIIGGGGHHHH LLLLEEEEVVVVEEEELLLLSSSS OOOOFFFF QQQQUUUUAAAALLLLIIIITTTTYYYY AAAANNNNDDDD////OOOORRRR RRRREEEELLLLIIIIAAAABBBBIIIILLLLIIIITTTTYYYY,,,, AAAANNNNDDDD////OOOORRRR AAAA MMMMAAAALLLLFFFFUUUUNNNNCCCCTTTTIIIIOOOONNNN OOOORRRR FFFFAAAAIIIILLLLUUUURRRREEEE OOOOFFFF WWWWHHHHIIIICCCCHHHH MMMMAAAAYYYY CCCCAAAAUUUUSSSSEEEE LLLLOOOOSSSSSSSS OOOOFFFF HHHHUUUUMMMMAAAANNNN LLLLIIIIFFFFEEEE,,,, BBBBOOOODDDDIIIILLLLYYYY IIIINNNNJJJJUUUURRRRYYYY,,,, SSSSEEEERRRRIIIIOOOOUUUUSSSS PPPPRRRROOOOPPPPEEEERRRRTTTTYYYY DDDDAAAAMMMMAAAAGGGGEEEE AAAANNNNDDDD////OOOORRRR SSSSEEEERRRRIIIIOOOOUUUUSSSS PPPPUUUUBBBBLLLLIIIICCCC IIIIMMMMPPPPAAAACCCCTTTT ((((""""UUUUNNNNIIIINNNNTTTTEEEENNNNDDDDEEEEDDDD UUUUSSSSEEEE"""")))).... Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IIIIFFFF YYYYOOOOUUUU UUUUSSSSEEEE PPPPRRRROOOODDDDUUUUCCCCTTTT FFFFOOOORRRR UUUUNNNNIIIINNNNTTTTEEEENNNNDDDDEEEEDDDD UUUUSSSSEEEE,,,, TTTTOOOOSSSSHHHHIIIIBBBBAAAA AAAASSSSSSSSUUUUMMMMEEEESSSS NNNNOOOO LLLLIIIIAAAABBBBIIIILLLLIIIITTTTYYYY FFFFOOOORRRR PPPPRRRROOOODDDDUUUUCCCCTTTT.... For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • AAAABBBBSSSSEEEENNNNTTTT AAAA WWWWRRRRIIIITTTTTTTTEEEENNNN SSSSIIIIGGGGNNNNEEEEDDDD AAAAGGGGRRRREEEEEEEEMMMMEEEENNNNTTTT,,,, EEEEXXXXCCCCEEEEPPPPTTTT AAAASSSS PPPPRRRROOOOVVVVIIIIDDDDEEEEDDDD IIIINNNN TTTTHHHHEEEE RRRREEEELLLLEEEEVVVVAAAANNNNTTTT TTTTEEEERRRRMMMMSSSS AAAANNNNDDDD CCCCOOOONNNNDDDDIIIITTTTIIIIOOOONNNNSSSS OOOOFFFF SSSSAAAALLLLEEEE FFFFOOOORRRR PPPPRRRROOOODDDDUUUUCCCCTTTT,,,, AAAANNNNDDDD TTTTOOOO TTTTHHHHEEEE MMMMAAAAXXXXIIIIMMMMUUUUMMMM EEEEXXXXTTTTEEEENNNNTTTT AAAALLLLLLLLOOOOWWWWAAAABBBBLLLLEEEE BBBBYYYY LLLLAAAAWWWW,,,, TTTTOOOOSSSSHHHHIIIIBBBBAAAA ((((1111)))) AAAASSSSSSSSUUUUMMMMEEEESSSS NNNNOOOO LLLLIIIIAAAABBBBIIIILLLLIIIITTTTYYYY WWWWHHHHAAAATTTTSSSSOOOOEEEEVVVVEEEERRRR,,,, IIIINNNNCCCCLLLLUUUUDDDDIIIINNNNGGGG WWWWIIIITTTTHHHHOOOOUUUUTTTT LLLLIIIIMMMMIIIITTTTAAAATTTTIIIIOOOONNNN,,,, IIIINNNNDDDDIIIIRRRREEEECCCCTTTT,,,, CCCCOOOONNNNSSSSEEEEQQQQUUUUEEEENNNNTTTTIIIIAAAALLLL,,,, SSSSPPPPEEEECCCCIIIIAAAALLLL,,,, OOOORRRR IIIINNNNCCCCIIIIDDDDEEEENNNNTTTTAAAALLLL DDDDAAAAMMMMAAAAGGGGEEEESSSS OOOORRRR LLLLOOOOSSSSSSSS,,,, IIIINNNNCCCCLLLLUUUUDDDDIIIINNNNGGGG WWWWIIIITTTTHHHHOOOOUUUUTTTT LLLLIIIIMMMMIIIITTTTAAAATTTTIIIIOOOONNNN,,,, LLLLOOOOSSSSSSSS OOOOFFFF PPPPRRRROOOOFFFFIIIITTTTSSSS,,,, LLLLOOOOSSSSSSSS OOOOFFFF OOOOPPPPPPPPOOOORRRRTTTTUUUUNNNNIIIITTTTIIIIEEEESSSS,,,, BBBBUUUUSSSSIIIINNNNEEEESSSSSSSS IIIINNNNTTTTEEEERRRRRRRRUUUUPPPPTTTTIIIIOOOONNNN AAAANNNNDDDD LLLLOOOOSSSSSSSS OOOOFFFF DDDDAAAATTTTAAAA,,,, AAAANNNNDDDD ((((2222)))) DDDDIIIISSSSCCCCLLLLAAAAIIIIMMMMSSSS AAAANNNNYYYY AAAANNNNDDDD AAAALLLLLLLL EEEEXXXXPPPPRRRREEEESSSSSSSS OOOORRRR IIIIMMMMPPPPLLLLIIIIEEEEDDDD WWWWAAAARRRRRRRRAAAANNNNTTTTIIIIEEEESSSS AAAANNNNDDDD CCCCOOOONNNNDDDDIIIITTTTIIIIOOOONNNNSSSS RRRREEEELLLLAAAATTTTEEEEDDDD TTTTOOOO SSSSAAAALLLLEEEE,,,, UUUUSSSSEEEE OOOOFFFF PPPPRRRROOOODDDDUUUUCCCCTTTT,,,, OOOORRRR IIIINNNNFFFFOOOORRRRMMMMAAAATTTTIIIIOOOONNNN,,,, IIIINNNNCCCCLLLLUUUUDDDDIIIINNNNGGGG WWWWAAAARRRRRRRRAAAANNNNTTTTIIIIEEEESSSS OOOORRRR CCCCOOOONNNNDDDDIIIITTTTIIIIOOOONNNNSSSS OOOOFFFF MMMMEEEERRRRCCCCHHHHAAAANNNNTTTTAAAABBBBIIIILLLLIIIITTTTYYYY,,,, FFFFIIIITTTTNNNNEEEESSSSSSSS FFFFOOOORRRR AAAA PPPPAAAARRRRTTTTIIIICCCCUUUULLLLAAAARRRR PPPPUUUURRRRPPPPOOOOSSSSEEEE,,,, AAAACCCCCCCCUUUURRRRAAAACCCCYYYY OOOOFFFF IIIINNNNFFFFOOOORRRRMMMMAAAATTTTIIIIOOOONNNN,,,, OOOORRRR NNNNOOOONNNNIIIINNNNFFFFRRRRIIIINNNNGGGGEEEEMMMMEEEENNNNTTTT.... • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TTTTOOOOSSSSHHHHIIIIBBBBAAAA AAAASSSSSSSSUUUUMMMMEEEESSSS NNNNOOOO LLLLIIIIAAAABBBBIIIILLLLIIIITTTTYYYY FFFFOOOORRRR DDDDAAAAMMMMAAAAGGGGEEEESSSS OOOORRRR LLLLOOOOSSSSSSSSEEEESSSS OOOOCCCCCCCCUUUURRRRRRRRIIIINNNNGGGG AAAASSSS AAAA RRRREEEESSSSUUUULLLLTTTT OOOOFFFF NNNNOOOONNNNCCCCOOOOMMMMPPPPLLLLIIIIAAAANNNNCCCCEEEE WWWWIIIITTTTHHHH AAAAPPPPPPPPLLLLIIIICCCCAAAABBBBLLLLEEEE LLLLAAAAWWWWSSSS AAAANNNNDDDD RRRREEEEGGGGUUUULLLLAAAATTTTIIIIOOOONNNNSSSS.... 9 2014-02-27 Rev.2.0