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  • 型号: TPCF8104(TE85L,F,M
  • 制造商: Toshiba America Electronic Components, Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
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TPCF8104(TE85L,F,M产品简介:

ICGOO电子元器件商城为您提供TPCF8104(TE85L,F,M由Toshiba America Electronic Components, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TPCF8104(TE85L,F,M价格参考。Toshiba America Electronic Components, Inc.TPCF8104(TE85L,F,M封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 P 沟道 30V 6A(Ta) 700mW(Ta) VS-8 (2.9x1.5)。您可以下载TPCF8104(TE85L,F,M参考资料、Datasheet数据手册功能说明书,资料中有TPCF8104(TE85L,F,M 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET P-CH 30V 6A VS-8

产品分类

FET - 单

FET功能

逻辑电平门

FET类型

MOSFET P 通道,金属氧化物

品牌

Toshiba Semiconductor and Storage

数据手册

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产品图片

产品型号

TPCF8104(TE85L,F,M

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同Id时的Vgs(th)(最大值)

2V @ 1mA

不同Vds时的输入电容(Ciss)

1760pF @ 10V

不同Vgs时的栅极电荷(Qg)

34nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

28 毫欧 @ 3A,10V

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产品目录页面

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供应商器件封装

VS-8(2.9x1.9)

其它名称

TPCF8104FCT
TPCF8104FCT-ND
TPCF8104FMCT

功率-最大值

-

包装

剪切带 (CT)

安装类型

表面贴装

封装/外壳

8-SMD,扁平引线

标准包装

1

漏源极电压(Vdss)

30V

电流-连续漏极(Id)(25°C时)

6A (Ta)

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PDF Datasheet 数据手册内容提取

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit JEDEC ― Drain-source voltage VDSS −30 V JEITA ― Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V TOSHIBA 2-3U1A DC (Note 1) ID −6 Weight: 0.011 g (typ.) Drain current A Pulse (Note 1) IDP −24 Drain power dissipation (t = 5 s) (Note 2a) PD 2.5 W Circuit Configuration Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W 8 7 6 5 Single pulse avalanche energy (Note 3) EAS 5.8 mJ Avalanche current IAR −3 A Repetitive avalanche energy (Note 4) EAR 0.25 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 1 2 3 4 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29

TPCF8104 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 50.0 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.6 °C/W Marking (Note 5) Lot code (month) Lot No. Part No. F3D (or abbreviation code) Product-specific code Pin #1 Lot code Note 6 (year) Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ● on the lower left of the marking indicates Pin 1. Note 6: A dot marking identifies the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29

TPCF8104 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Gate threshold voltage Vth VDS = −10 V, ID = −1mA −0.8 ⎯ −2.0 V VGS = −4.5 V, ID = −3.0 A ⎯ 29 38 Drain-source ON resistance RDS (ON) mΩ VGS = −10 V, ID = −3.0A ⎯ 21 28 Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.0A 4.8 9.6 ⎯ S Input capacitance Ciss ⎯ 1760 ⎯ Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 200 ⎯ pF Output capacitance Coss ⎯ 210 ⎯ Rise time tr 0 V ID = −3.0 A ⎯ 2.8 ⎯ VGS VOUT Turn-on time ton −10 V Ω ⎯ 12 ⎯ Switching time Ω 5 = ns 7 L Fall time tf 4. R ⎯ 22 ⎯ VDD∼− −15 V Turn-off time toff Duty<= 1%, tw = 10 μs ⎯ 90 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 34 ⎯ VDD∼− −24 V, VGS = −10V, nC Gate-source charge1 Qgs1 ID = −6.0 A ⎯ 4.7 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 7.2 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −24 A Forward voltage (diode) VDSF IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V 3 2009-09-29

TPCF8104 ID – VDS ID – VDS -5 -10 -10 -2.7 Common source -3 Common source -2.8 Ta = 25°C Ta = 25°C -4.5 -3 Pulse test -3.5 -2.8 Pulse test -4 -2.6 -8 -4.5 (A) -3.5 -2.5 (A) -10 -2.7 -2.6 D -3 D -6 I I ent -2.4 ent -2.5 curr -2 curr -4 n n -2.4 Drai -2.3 Drai -2.3 -1 -2 -2.2 -2.2 VGS = -2.1V VGS = -2.1 V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS VDS – VGS -10 -0.5 Common source Common source -8 VDS = -10 V (V) -0.4 TPau l=s e2 5te℃st A) Pulse test DS ( V urrent I D -86 e voltage --00..32 n c urc ID = -6 A Drai 4 100 Ta = −55°C Drain-so -0.1 -3 25 -1.5 0 0 0 -1 -2 -3 -4 -5 0 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID RDS (ON) – ID -100 1000 Common source common source (S) VDS = -10 V Ta = 25°C ansfer admittance |Y| fs -1-10 Pulse test 100 Ta = −55°C2 5 n-source ON resistance (m) RΩDS (ON) 10100 Pulse test VGS- 4=. 5-1 0 V ard tr Drai w or F -0.1 1 -0.1 -1 -10 -100 -0.1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 4 2009-09-29

TPCF8104 RDS (ON) – Ta IDR – VDS 50 -100 Common source ID = -6A Common source e 40 Pulse test -3A (A) TPau l=s e2 5te°sCt N resistanc(m) Ω 30 VGS = -4.5 V -3A ID =-−1 .65AA ent I DR -10 -4.5 n-source O RDS (ON) 20 -1.5A everse curr -10 -3 Drai 10 VGS = -10 V Drain r -2 -1 VGS = 0 V 0 -1 −80 −40 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS Vth – Ta 10000 -4 Common source Ciss V) VDS = -10 V pF) 1000 V (th -3 IPDu l=s e-1 t emsAt C ( Coss ge Capacitance 11000 CVGomSm =o 0n Vs ource Crss ate threshold volta --12 f = 1 MHz G Ta = 25°C 1 0 -0.1 -1 -10 -100 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output PD – Ta characteristics 3 (1) Device mounted on a glass-epoxy board (a) (Note 2a) W) 2.5 (1) t = 5 s (2) Device mounted on a V) -40 -16 V) (D glass-epoxy board (b) (Note 2b) (S (S P 2 VD -30 -12 VG Drain power dissipation 01..155 (((212))) DtD =CC 5 s Drain-source voltage --1200 VDS VGS-6 CITPD-au1o l2m==Vs eD-m26 5tDo eA°n sC= ts -o2u4r cVe --84 Gate-source voltage 0 0 0 0 40 80 120 160 0 -10 -20 -30 -40 -50 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2009-09-29

TPCF8104 rth – tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) 100 W) mal (°C/ Device mounted on a glass-epoxy board (a) (Note 2a) ent there r th 10 Transiedanc p m i 1 0.1 1 m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area −100 ID max (pulse)* A) 1 ms* ( −10 D I ent 10 ms* urr c ain −1 Dr *:Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature VDSS max −0.1 −0.1 −1 −10 −100 Drain-source voltage VDS (V) 6 2009-09-29

TPCF8104 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-09-29