TPCA8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCA8051-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 ± 0.1 DC-DC Converter Applications 8 0.05 MA 5 0.3 0.2 • Small footprint due to a small and thin package 0 ± 0 ± 0.15 ± 0.05 6. 5. • High-speed switching • Small gate charge: QSW = 18 nC (typ.) 1 4 0.595 ••• LLHooigwwh ld efroaarkiwnaa-gsreod uc turrcraerne OsnfNte:r -I rDaeSdsSims t=iat t1na0cn eμc: eAR: (D|mYSfa s(x|O )=N ( )9V 6=D SS6 . =0(t y8mp0Ω. )V ()t yp.) 0.95 0.05± 5.0 ± 0.2 0.166 0.05± A • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 0.05 S S 0.2 ± Absolute Maximum Ratings (Ta = 25°C) 1 4 1.1 1 0. Characteristic Symbol Rating Unit 0.6 ± 4.25 ± 0.2 0.2± 5 Drain-source voltage VDSS 80 V 3. Drain-gate voltage (RGS = 20 kΩ) VDGR 80 V 8 5 1 0. Gate-source voltage VGSS ±20 V 8 ± 0. DC (Note 1) ID 28 1,2,3:SOURCE 4 :GATE Drain current A Pulsed (Note 1) IDP 84 5,6,7,8:DRAIN Drain power dissipation (Tc = 25℃) PD 45 W JEDEC ⎯ Drain power dissipation (t = 10 s) JEITA ⎯ PD 2.8 W (Note 2a) TOSHIBA 2-5Q1A Drain power dissipation (t = 10 s) PD 1.6 W Weight: 0.069 g (typ.) (Note 2b) Single-pulse avalanche energy EAS 255 mJ (Note 3) Circuit Configuration Avalanche current IAR 28 A Repetitive avalanche energy 8 7 6 5 EAR 2.03 mJ (Tc = 25℃) (Note 4) Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high 1 2 3 4 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-10 1 2013-11-01

TPCA8051-H Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W (Tc = 25℃) Thermal resistance, channel to ambient Rth (ch-a) 44.6 °C/W (t = 10 s) (Note 2a) Thermal resistance, channel to ambient Rth (ch-a) 78.1 °C/W (t = 10 s) (Note 2b) Marking (Note 5) TPCA Part number 8051-H ※ Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 28 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01

TPCA8051-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 80 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 80 ⎯ ⎯ Drain-source breakdown voltage V V (BR) DSX ID = 10 mA, VGS = −20 V 60 ⎯ ⎯ Gate threshold voltage Vth VDS = 10 V, ID = 1.0 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 14 A ⎯ 6.4 9.8 Drain-source ON-resistance RDS (ON) mΩ VGS = 10 V, ID = 14 A ⎯ 6.0 9.4 Forward transfer admittance |Yfs| VDS = 10 V, ID = 14 A 48 96 ⎯ S Input capacitance Ciss ⎯ 5800 7540 Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 150 210 pF Output capacitance Coss ⎯ 520 ⎯ Gate resistance rg VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 1.5 Ω Rise time tr ⎯ 3.4 ⎯ VGS100 VV ID=14AVOUT Turn-on time ton Ω ⎯ 13 ⎯ Switching time Ω 2.9 ns Fall time tf 4.7 =L ⎯ 6.3 ⎯ R VDD ≈ 40 V Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 66 ⎯ Total gate charge VDD ≈ 64 V, VGS = 10 V, ID = 28 A ⎯ 91 ⎯ (gate-source plus gate-drain) Qg VDD ≈ 64 V, VGS = 5 V, ID = 28 A ⎯ 47 ⎯ Gate-source charge 1 Qgs1 ⎯ 16 ⎯ nC Gate-drain (“Miller”) charge Qgd VDD ≈ 64 V, VGS = 10 V, ID = 28 A ⎯ 11 ⎯ Gate switch charge QSW ⎯ 18 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 84 A Forward voltage (diode) VDSF IDR = 28 A, VGS = 0 V ⎯ ⎯ −1.2 V 3 2013-11-01

TPCA8051-H 4.5 3.2 3 ID – VDS 4.5 3.43.2 ID – VDS 20 50 10 2.8 2.7 Common source 10 3 2.9 Common source Ta = 25°C Ta = 25°C 2.9 Pulse test 3.1 Pulse test 16 40 A) 2.6 A) 2.8 ( ( D D I 12 I 30 ent ent 2.7 urr 8 2.5 urr 20 c c n n ai ai Dr VGS = 2.4 V Dr 2.6 4 10 VGS = 2.5 V 0 0 0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS VDS – VGS 60 0.5 Common source Common source VDS = 10 V V) Ta = 25°C 50 Pulse test ( Pulse test A) S 0.4 ( 40 VD D I e 0.3 g ent 30 olta ain curr 20 Ta = −55°C ource v 0.2 ID = 28 A Dr 100 25 n-s 14 10 ai 0.1 Dr 7 0 0 0 1 2 3 4 5 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID RDS (ON) – ID S) 1000 Common source 100 Common source ( VDS = 10 V Ta = 25°C Y| fs Pulse test ce Pulse test | 100 an nce Ta = −55°C esistm) Ω er admitta 10 100 25 urce ON-r (S (ON) 10 VGS = 4.5 V ansf n-soRD 10 ard tr 1 Drai w or F 0.1 1 0.1 1 10 100 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2013-11-01

TPCA8051-H RDS (ON) – Ta IDR – VDS 16 1000 Common source Common source e Pulse test (A) TPau l=s e2 5te°sCt anc 12 R 100 4.5 sist) Ω ID = 7, 14, 28 A ID 10 source ON-reR (mDS (ON) 8 VGS = 4.5 V ID = 7, 14, 28 A verse current 10 3 2 1 VGS = 0 V ain- 4 n re 1 Dr VGS = 10 V ai Dr 0 0.1 −80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS Vth – Ta 10000 2.5 Ciss (V) 2.0 pF) V th C ( 1000 ge 1.5 ce Coss volta citan Crss hold 1.0 a 100 s p e Ca CVf =Go m1S m M=o H0nz V s ource ate thr 0.5 CVDomS m= o1n0 sVo urce G ID = 1 mA Ta = 25°C Pulse test 10 0 0.1 1 10 100 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 100 20 Common source V) ID = 28 A V) (S 80 TPau l=s e2 5te°sCt 16 (S D G V V e 60 VDS = 64 V 12 e g g a a olt 16 32 olt e v 40 8 e v urc 32 VDD = 64 V urc o o Drain-s 20 16 4 Gate-s 0 0 0 40 80 120 160 Total gate charge Qg (nC) 5 2013-11-01

TPCA8051-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) e (3) Tc = 25℃ (2) c n a 100 d (1) e mpW) al iC/ m° 10 er ( nt thr th (3) e nsi 1 a Tr Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta PD – Tc 3.0 50 (1) Device mounted on a glass-epoxy W) (1) (b2o) aDrde v(iac)e ( Nmootuen 2tead) on a glass-epoxy W) ( 2.5 board (b) (Note 2b) ( 40 D t = 10 s D P P n 2.0 n atio (2) atio 30 sip 1.5 sip s s di di 20 er 1.0 er w w o o p p n n 10 ai 0.5 ai Dr Dr 0 0 0 40 80 120 160 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature TC (°C) Safe operating area 1000 100 ID max (Pulse) * A) t =1 ms* ( ID 10 t =10 ms* ent curr 1 n ai Dr * Single-pulse 0.1 Ta = 25℃ Curves must be derated linearly with increase in temperature. VDSS max 0.01 0.1 1 10 100 Drain-source voltage VDS (V) 6 2013-11-01

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Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 7 2013-11-01