TP0610K Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA) Definition (cid:129) TrenchFET® Power MOSFET - 60 6 at V = - 10 V - 1 to - 3 - 185 GS (cid:129) High-Side Switching (cid:129) Low On-Resistance: 6  (cid:129) Low Threshold: - 2 V (typ.) (cid:129) Fast Swtiching Speed: 20 ns (typ.) TO-236 (cid:129) Low Input Capacitance: 20 pF (typ.) (SOT-23) (cid:129) 2000 V ESD Protection Marking Code: 6Kwll (cid:129) Compliant to RoHS Directive 2002/95/EC 6K = Part Number Code for TP0610K G 1 w = Week Code ll = Lot Traceability APPLICATIONS 3 D (cid:129) Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. S 2 (cid:129) Battery Operated Systems (cid:129) Power Supply Converter Circuits (cid:129) Solid-State Relays Top View Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free) BENEFITS TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free) (cid:129) Ease in Driving Switches (cid:129) Low Offset (Error) Voltage (cid:129) Low-Voltage Operation (cid:129) High-Speed Circuits (cid:129) Easily Driven without Buffer ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C - 185 Continuous Drain Currenta ID TA = 100 °C - 115 mA Pulsed Drain Currentb IDM - 800 TA = 25 °C 350 Power Dissipationa PD mW TA = 100 °C 140 Maximum Junction-to-Ambienta RthJA 350 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71411 www.vishay.com S10-1476-Rev. H, 05-Jul-10 1

TP0610K Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted A Limits Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 10 µA - 60 DS GS D V Gate-Threshold Voltage V V = V , I = - 250 µA - 1 - 3 GS(th) DS GS D V = 0 V, V = ± 20 V ± 10 µA DS GS V = 0 V, V = ± 10 V ± 200 DS GS Gate-Body Leakage I GSS V = 0 V, V = ± 10 V, T = 85 °C ± 500 DS GS J V = 0 V, V = ± 5 V ± 100 nA DS GS V = - 60 V, V = 0 V - 25 DS GS Zero Gate Voltage Drain Current I DSS V = - 60 V, V = 0 V, T = 85 °C - 250 DS GS J V = - 10 V, V = - 4.5 V - 50 On-State Drain Currenta I GS DS mA D(on) V = - 10 V, V = - 10 V - 600 GS DS V = - 4.5 V, I = - 25 mA 10 GS D Drain-Source On-Resistancea R V = - 10 V, I = - 500 mA 6  DS(on) GS D V = - 10 V, I = - 500 mA, T =125 °C 9 GS D J Forward Transconductancea g V = - 10 V, I = - 100 mA 80 mS fs DS D Diode Forward Voltage V I = - 200 mA, V = 0 V - 1.4 V SD S GS Dynamic Total Gate Charge Q 1.7 g V = - 30 V, V = - 15 V Gate-Source Charge Q DS GS 0.26 nC gs I  - 500 mA D Gate-Drain Charge Q 0.46 gd Input Capacitance C 23 iss V = - 25 V, V = 0 V Output Capacitance C DS GS 10 pF oss f = 1 MHz Reverse Transfer Capacitance C 5 rss Switchingb Turn-On Time td(on) VDD = - 25 V, RL = 150  20 ns Turn-Off Time td(off) ID  - 200 mA, VGEN = - 10 V, Rg = 10  35 Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71411 2 S10-1476-Rev. H, 05-Jul-10

TP0610K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1200 VGS = 10 V TJ = - 55 °C 7 V 0.8 8 V A) 900 A) m 25 °C nt ( 0.6 nt ( e e urr urr 125 °C C 6 V C 600 n n Drai 0.4 Drai - D 5 V - D I I 300 0.2 4 V 0.0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS- Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 20 40 VGS= 0 V 16 VGS = 4.5 V 32 Ω) e ( F) Ciss stanc 12 ce (p 24 On-Resi 8 VGS = 5 V apacitan 16 - C DS(on) VGS = 10 V C - Coss R 4 8 Crss 0 0 0 200 400 600 800 1000 0 5 10 15 20 25 ID - Drain Current (mA) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 15 1.8 ID = 500 mA age (V) 12 VDS = 30 V ce 1.5 VGS = 10 V at 500 mA Gate-to-Source Volt 69 VDS = 48 V On-Resistan - DS(on)(Normalized) 001...692 VGS = 4.5 V at 25 mA - R S G 3 V 0.3 0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 -50 - 25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71411 www.vishay.com S10-1476-Rev. H, 05-Jul-10 3

TP0610K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 10 VGS = 0 V Ω) 8 ID = 500 mA urrent (A) 100 TJ = 125 °C esistance ( 6 C R e n- - SourcIS 10 TJ = 25 °C R - ODS(on) 24 ID = 200 mA TJ = - 55 °C 1 0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD- Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.5 3 0.4 ID = 250 µA 2.5 0.3 ance (V) 0.2 W) 2 Vari 0.1 er ( 1.5 h) ow GS(t -0.0 P V 1 -0.1 TA = 25 °C 0.5 -0.2 -0.3 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 2 nt 1 Transieance Duty Cycle = 0.5 ctive mped 0.2 zed Effehermal I 0.1 0.1 NPoDteMs: maliT 0.05 or t1 N 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = RthJA = 350 °C/W Single Pulse 3. TJM- TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71411. www.vishay.com Document Number: 71411 4 S10-1476-Rev. H, 05-Jul-10

Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 E 1 2 e S e1 D 0.10 mm C A A2 0.004" C q 0.25 mm Gauge Plane Seating Plane Seating Plane A1 C L L1 MILLIMETERS INCHES Dim Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3° 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 www.vishay.com 09-Jul-01 1

AN807 Vishay Siliconix (cid:1) Mounting LITTLE FOOT SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated ambient air. This pattern uses all the available area underneath the circuit and small-signal packages which have been been modified body for this purpose. to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. 0.114 2.9 0.081 See Application Note 826, Recommended Minimum Pad 2.05 Patterns With Outline Drawing Access for Vishay Siliconix 0.150 3.8 MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET 0.059 footprint . In converting this footprint to the pad set for a power 1.5 device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.0394 0.037 1.0 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional Since surface-mounted packages are small, and reflow soldering function of providing the thermal connection from the package to is the most common way in which these are affixed to the PC the PC board. The total cross section of a copper trace connected board, “thermal” connections from the planar copper to the pads to the drain may be adequate to carry the current required for the have not been used. Even if additional planar copper area is used, application, but it may be inadequate thermally. Also, heat spreads there should be no problems in the soldering process. The actual in a circular fashion from the heat source. In this case the drain pin solder connections are defined by the solder mask openings. By is the heat source when looking at heat spread on the PC board. combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. Figure 1 shows the footprint with copper spreading for the SOT-23 A final item to keep in mind is the width of the power traces. The package. This pattern shows the starting point for utilizing the absolute minimum power trace width must be determined by the board area available for the heat spreading copper. To create this amount of current it has to carry. For thermal reasons, this pattern, a plane of copper overlies the drain pin and provides minimum width should be at least 0.020 inches. The use of wide planar copper to draw heat from the drain lead and start the traces connected to the drain plane provides a low-impedance process of spreading the heat so it can be dissipated into the path for heat to move away from the device. Document Number: 70739 www.vishay.com 26-Nov-03 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SOT-23 0.037 0.022 (0.950) (0.559) 6 2) 9 5) 0 9 4 4 1 6 0 2 0. 2. 0. 1. ( ( 9 4) 2 2 0 7 0. 0. ( 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72609 www.vishay.com Revision: 21-Jan-08 25

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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