Low Power Programmable Temperature Controller TMP01 FEATURES FUNCTIONAL BLOCK DIAGRAM −55°C to +125°C (−67°F to +257°F) operation TEMPERATURE ±1.0°C accuracy over temperature (typ) 2.5V SENSOR AND SENSOR VREF 1 8 V+ Temperature-proportional voltage output VOLTAGE R1 REFERENCE User-programmable temperature trip points SET 2 7 OVER User-programmable hysteresis HIGH R2 WINDOW 20 mA open-collector trip point outputs COMPARATOR SET 3 6 UNDER TTL/CMOS compatible LOW R3 Single-supply operation (4.5 V to 13.2 V) PDIP, SOIC, and TO-99 packages GND 4 HYSTERESIS 5 VPTAT GENERATOR TMP01 00333-001 APPLICATIONS Figure 1. Over/under temperature sensor and alarm Board-level temperature sensing Temperature controllers Electronic thermostats Thermal protection HVAC systems Industrial process control Remote sensors GENERAL DESCRIPTION The TMP01 is a temperature sensor that generates a voltage Hysteresis is also programmed by the external resistor chain output proportional to absolute temperature and a control and is determined by the total current drawn out of the 2.5 V signal from one of two outputs when the device is either above reference. This current is mirrored and used to generate a or below a specific temperature range. Both the high/low hysteresis offset voltage of the appropriate polarity after a temperature trip points and hysteresis (overshoot) band are comparator has been tripped. The comparators are connected determined by user-selected external resistors. For high volume in parallel, which guarantees that there is no hysteresis overlap production, these resistors are available on board. and eliminates erratic transitions between adjacent trip zones. The TMP01 consists of a band gap voltage reference combined The TMP01 utilizes proprietary thin-film resistors in conjunc- with a pair of matched comparators. The reference provides tion with production laser trimming to maintain a temperature both a constant 2.5 V output and a voltage proportional to accuracy of ±1°C (typical) over the rated temperature range, absolute temperature (VPTAT) which has a precise temperature with excellent linearity. The open-collector outputs are capable coefficient of 5 mV/K and is 1.49 V (nominal) at 25°C. The of sinking 20 mA, enabling the TMP01 to drive control relays comparators compare VPTAT with the externally set tempera- directly. Operating from a 5 V supply, quiescent current is only ture trip points and generate an open-collector output signal 500 μA (max). when one of their respective thresholds has been exceeded. The TMP01 is available in 8-pin mini PDIP, SOIC, and TO-99 packages. Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©1993–2009 Analog Devices, Inc. All rights reserved.

TMP01 TABLE OF CONTENTS Features .............................................................................................. 1  Self-Heating Effects .................................................................... 10  Applications ....................................................................................... 1  Buffering the Voltage Reference ............................................... 10  Functional Block Diagram .............................................................. 1  Preserving Accuracy Over Wide Temperature Range General Description ......................................................................... 1  Operation .................................................................................... 10  Revision History ............................................................................... 2  Thermal Response Time ........................................................... 10  Specifications ..................................................................................... 3  Switching Loads with the Open-Collector Outputs .............. 11  TMP01EST, TMP01FP, TMP01FS ............................................. 3  High Current Switching ............................................................ 12  TMP01FJ ........................................................................................ 4  Buffering the Temperature Output Pin ................................... 13  Absolute Maximum Ratings ............................................................ 5  Differential Transmitter ............................................................. 13  Typical Performance Characteristics ............................................. 6  4 mA to 20 mA Current Loop .................................................. 13  Theory of Operation ........................................................................ 8  Temperature-to-Frequency Converter .................................... 14  Temperature Hysteresis ............................................................... 8  Isolation Amplifier ..................................................................... 15  Programming the TMP01 ........................................................... 8  Out-of-Range Warning .............................................................. 15  Understanding Error Sources ..................................................... 9  Translating 5 mV/K to 10 mV/°C ............................................ 16  Translating VPTAT to the Fahrenheit Scale ........................... 16  Safety Considerations in Heating and Cooling System Design ............................................................................................ 9  Outline Dimensions ....................................................................... 17  Applications Information .............................................................. 10  Ordering Guide .......................................................................... 18  REVISION HISTORY 7/09—Rev. D to Rev. E Updated Format .................................................................. Universal Updated Outline Dimensions ....................................................... 18 Changes to Ordering Guide .......................................................... 19 1/02—Rev. C: Rev. D Edits to General Descriptions Section ........................................... 1 Edits to Specifications Section ........................................................ 2 Edits to Wafer Test Limits Section.................................................. 4 Edits to Dice Characteristics Section ............................................. 4 Edits to Ordering Guide .................................................................. 5 7/93—Revision 0: Initial Version Rev. E | Page 2 of 20

TMP01 SPECIFICATIONS TMP01ES, TMP01FP, TMP01FS PDIP and SOIC packages. V+ = 5 V, GND = O V, −40°C ≤ T ≤ +85°C, unless otherwise noted. A Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUTS SET HIGH, SET LOW Offset Voltage V 0.25 mV OS Offset Voltage Drift TCV 3 μV/°C OS Input Bias Current, E Grade I 25 50 nA B Input Bias Current, F Grade I 25 100 nA B OUTPUT VPTAT Output Voltage VPTAT T = 25°C, no load 1.49 V A Scale Factor1 TCV 5 mV/K PTAT Temperature Accuracy, E Grade T = 25°C, no load −1.5 ±0.5 1.5 °C A Temperature Accuracy, F Grade T = 25°C, no load −3 ±1.0 3 °C A Temperature Accuracy, E Grade 10°C < T < 40°C, no load ±0.75 °C A Temperature Accuracy, F Grade 10°C < T < 40°C, no load ±1.5 °C A Temperature Accuracy, E Grade −40°C < T < 85°C, no load −3.0 ±1 3.0 °C A Temperature Accuracy, F Grade −40°C < T < 85°C, no load −5.0 ±2 5.0 °C A Temperature Accuracy, E Grade −55°C < T < 125°C, no load ±1.5 °C A Temperature Accuracy, F Grade ΔVPTAT −55°C < T < 125°C, no load ±2.5 °C A Repeatability Error2 0.25 Degree Long-Term Drift Error3,4 0.25 0.5 Degree Power Supply Rejection Ratio PSRR T = 25°C, 4.5 V ≤ V+ ≤ 13.2 V ±0.02 ±0.1 %/V A OUTPUT VREF Output Voltage, E Grade VREF T = 25°C, no load 2.495 2.500 2.505 V A Output Voltage, F Grade VREF T = 25°C, no load 2.490 2.500 2.510 V A Output Voltage, E Grade VREF −40°C < T < 85°C, no load 2.490 2.500 2.510 V A Output Voltage, F Grade VREF −40°C < T < 85°C, no load 2.485 2.500 2.515 V A Output Voltage, E Grade VREF −55°C < T < 125°C, no load 2.5 ± 0.01 V A Output Voltage, F Grade VREF −55°C < T < 125°C, no load 2.5 ± 0.015 V A Drift TC −10 ppm/°C VREF Line Regulation 4.5 V ≤ V+ ≤ 13.2 V ±0.01 ±0.05 %/V Load Regulation 10 μA ≤ I ≤ 500 μA ±0.1 ±0.25 %/mA VREF Output Current, Zero Hysteresis IV 7 μA REF Hysteresis Current Scale Factor1 SF 5.0 μA/°C HYS Turn-On Settling Time To rated accuracy 25 μs OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage V I = 1.6 mA 0.25 0.4 V OL SINK V I = 20 mA 0.6 V OL SINK Output Leakage Current I V+ = 12 V 1 100 μA OH Fall Time t See Figure 2 40 ns HL POWER SUPPLY Supply Range V+ 4.5 13.2 V Supply Current I Unloaded, +V = 5 V 400 500 μA SY I Unloaded, +V = 13.2 V 450 800 μA SY Power Dissipation P +V = 5 V 2.0 2.5 mW DISS 1 K = °C + 273.15. 2 Maximum deviation between 25°C readings after temperature cycling between −55°C and +125°C. 3 Guaranteed but not tested. 4 Observed in a group sample over an accelerated life test of 500 hours at 150°C. Rev. E | Page 3 of 20

TMP01 V+ 1kΩ 20pF 00333-002 Figure 2. Test Load TMP01FJ TO-99 metal can package. V+ = 5 V, GND = 0 V, −40°C ≤ T ≤ +85°C, unless otherwise noted. A Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUTS SET HIGH, SET LOW Offset Voltage V 0.25 mV OS Offset Voltage Drift TCV 3 μV/°C OS Input Bias Current, F Grade I 25 100 nA B OUTPUT VPTAT Output Voltage VPTAT T = 25°C, no load 1.49 V A Scale Factor1 TCV 5 mV/K PTAT Temperature Accuracy, F Grade T = 25°C, no load −3 ±1.0 3 °C A Temperature Accuracy, F Grade 10°C < T < 40°C, no load ±1.5 °C A Temperature Accuracy, F Grade −40°C < T < 85°C, no load −5.0 ±2 5.0 °C A Temperature Accuracy, F Grade ΔVPTAT −55°C < T < 125°C, no load ±2.5 °C A Repeatability Error2 0.25 Degree Long-Term Drift Error3, 4 0.25 0.5 Degree Power Supply Rejection Ratio PSRR T = 25°C, 4.5 V ≤ V+ ≤ 13.2 V ±0.02 ±0.1 %/V A OUTPUT VREF Output Voltage, F Grade VREF T = 25°C, no load 2.490 2.500 2.510 V A Output Voltage, F Grade VREF −40°C < T < 85°C, no load 2.485 2.500 2.515 V A Output Voltage, F Grade VREF −55°C < T < 125°C, no load 2.5 ± 0.015 V A Drift TC −10 ppm/°C VREF Line Regulation 4.5 V ≤ V+ ≤ 13.2 V ±0.01 ±0.05 %/V Load Regulation 10 μA ≤ I ≤ 500 μA ±0.1 ±0.25 %/mA VREF Output Current, Zero Hysteresis IV 7 μA REF Hysteresis Current Scale Factor1 SF 5.0 μA/°C HYS Turn-On Settling Time To rated accuracy 25 μs OPEN-COLLECTOR OUTPUTS OVER, UNDER Output Low Voltage V I = 1.6 mA 0.25 0.4 V OL SINK V I = 20 mA 0.6 V OL SINK Output Leakage Current I V+ = 12 V 1 100 μA OH Fall Time t See Figure 2 40 ns HL POWER SUPPLY Supply Range V+ 4.5 13.2 V Supply Current I Unloaded, +V = 5 V 400 500 μA SY I Unloaded, +V = 13.2 V 450 800 μA SY Power Dissipation P +V = 5 V 2.0 2.5 mW DISS 1K = °C + 273.15. 2Maximum deviation between 25°C readings after temperature cycling between −55°C and +125°C. 3Guaranteed but not tested. 4Observed in a group sample over an accelerated life test of 500 hours at 150°C. Rev. E | Page 4 of 20

TMP01 ABSOLUTE MAXIMUM RATINGS Digital inputs and outputs are protected; however, permanent Table 3. damage may occur on unprotected units from high energy Parameter Rating electrostatic fields. Keep units in conductive foam or packaging Maximum Supply Voltage −0.3 V to +15 V at all times until ready to use. Use proper antistatic handling Maximum Input Voltage (SET HIGH, SET LOW) −0.3 V to V+ +0.3 V procedures. Maximum Output Current (VREF, VPTAT) 2 mA Remove power before inserting or removing units from their Maximum Output Current (Open-Collector 50 mA sockets. Outputs) Maximum Output Voltage (Open-Collector 15 V Table 4. Outputs) Package Type θ θ Unit Operating Temperature Range −55°C to +150°C JA JC 8-Lead PDIP (N-8) 1031 43 °C/W Die Junction Temperature 150°C 8-Lead SOIC (R-8) 1582 43 °C/W Storage Temperature Range −65°C to +150°C 8-Pin TO-99 Can (H-08) 1501 18 °C/W Lead Temperature (Soldering 60 sec) 300°C Stresses above those listed under Absolute Maximum Ratings 1 θJA is specified for device in socket (worst-case conditions). may cause permanent damage to the device. This is a stress 2 θJA is specified for device mounted on PCB. rating only; functional operation of the device at these or any ESD CAUTION other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. E | Page 5 of 20

TMP01 TYPICAL PERFORMANCE CHARACTERISTICS 550 2.508 V+ = 5V 525 2.506 500 A) µ 2.504 T ( 475 N URRE 450 +125°C EF (V) 2.502 Y C +85°C VR PPL 425 –55°C 2.500 U S 400 +25°C 2.498 375 –40°C 3500 Figure 3. 5SupSpUlyP CPuLrYr eVn1O0tL vTsA. GSuEp (pV)ly V1o5ltage 20 00333-003 2.496–75 –F5i0gure –62. 5VREFT EA0MccPuErRaA2c5TyU vRs.E T (5e°0Cm)pera7t5ure 100 125 00333-006 5.0 6 VC = 15V V+ = 5V 5 TA = 25°C V) E ( 4.5 AG 4 T L VO V) PLY 4.0 V (CE 3 P U S M 2 U NIM 3.5 MI 1 3.0–75 –50 –25 TE0MPERA25TURE (5°0C) 75 100 125 00333-004 00 10 20 IC (mA) 30 40 50 00333-007 Figure 4. Minimum Supply Voltage vs. Temperature Figure 7. Open-Collector Output (OVER, UNDER) Saturation Voltage vs. Output Current 2.0 2.510 1.5 V+ = 5V 2.508 X + 3σ 1.0 2.506 CURVES NOT NORMALIZED R (°C) 0.5 2.504 EXTRAPOLATED FROM OPERATING LIFE DATA RRO 0 V) 2.502 PTAT E–0.5 VREF ( 22..459080 X V –1.0 2.496 2.494 –1.5 X – 3σ 2.492 –2.0–75 –F5i0gure– 52.5 VPTATET0M APcEcRuAr2a5TcUyR vEs .(5 °T0Ce)mpe7r5ature1 00 125 00333-005 2.4900 T =2 H00OURS OF 4O0P0ERATION6 A0T0 125°C; V8+0 =0 5V 1000 00333-008 Figure 8. VREF Long Term Drift Accelerated by Burn-In Rev. E | Page 6 of 20

TMP01 100 8 V+ = 5V 7 TA = 25°C 80 IVREF = 5µA 6 S 60 E dB) VIV+R E=F 5 =V 10µA DEVIC5 SRR ( 40 R OF 4 P E B3 20 M U N 2 0 1 –20100 1k FREQU1E0NkCY (Hz) 100k 1M 00333-009 0–0.4 –0.32 –0.24 –0O.1F6FSE–T0 .(0m8V) 0 0.08 0.16 00333-011 Figure 9. VREF Power Supply Rejection vs. Frequency Figure 11. Comparator Input Offset Distribution 1.0 10 9 8 V+ = 5V TA = 25°C V) S 7 m E E ( VIC 6 G E A D VOLT 0.1 R OF 5 SET MBE 4 FF NU 3 O 2 V+ = 5V IVREF = 7.5µA 1 0.01 00333-010 0 6.2 6.4 6R.6EFE6R.8ENCE7 CUR7R.E2NT 7(µ.4A) 7.6 7.8 8 00333-012 Figure 10. Set High, Set Low Input Offset Voltage vs. Temperature Figure 12. Zero Hysteresis Current Distribution Rev. E | Page 7 of 20

TMP01 THEORY OF OPERATION HYSTERESIS HYSTERESIS The TMP01 is a linear voltage-output temperature sensor, with LOW HIGH a window comparator that can be programmed by the user to HI activate one of two open-collector outputs when a predeter- HYSTERESIS HIGH = mined temperature setpoint voltage has been exceeded. A low OUTPUT HYSTERESIS LOW VOLTAGE drift voltage reference is available for setpoint programming. OVER, UNDER The temperature sensor is basically a very accurate, temperature compensated, band gap-type voltage reference with a buffered LO output voltage proportional to absolute temperature (VPTAT), aTchceu lroawte ldyr tirftim 2.m5 eVd r teof ear esncaclee ofauctptourt oVf R5E mF Vis/ Kea. s ily divided TSETLOW TEMPERATURE TSETHIGH 00333-014 Figure 14. TMP01 Hysteresis Profile externally with fixed resistors or potentiometers to accurately establish the programmed heat/cool setpoints, independent of After a temperature setpoint is exceeded and a comparator temperature. Alternatively, the setpoint voltages can be supplied tripped, the buffer output is enabled. The output is a current by other ground referenced voltage sources such as user- of the appropriate polarity that generates a hysteresis offset volt- programmed DACs or controllers. The high and low setpoint age across an internal 1000 Ω resistor at the comparator input. voltages are compared to the temperature sensor voltage, thus The comparator output remains on until the voltage at the creating a two-temperature thermostat function. In addition, comparator input, now equal to the temperature sensor voltage the total output current of the reference (I ) determines the VPTAT summed with the hysteresis offset, returns to the VREF magnitude of the temperature hysteresis band. The open programmed setpoint voltage. The comparator then returns collector outputs of the comparators can be used to control a low, deactivating the open-collector output and disabling the wide variety of devices. hysteresis current buffer output. The scale factor for the programmed hysteresis current is: HYSTERESIS CURRENT ENABLE IHYS = IVREF = 5 μA/°C + 7 μA VREF 1 8 V+ CURRENT Thus, since VREF = 2.5 V, with a reference load resistance MIRROR IHYS of 357 kΩ or greater (output current 7 μA or less), the temper- ature setpoint hysteresis is zero degrees. Larger values of load SET 2 7 OVER HIGH resistance only decrease the output current below 7 μA and have no effect on the operation of the device. The amount of WINDOW COMPARATOR hysteresis is determined by selecting a value of load resistance SET 3 6 UNDER LOW for VREF. PROGRAMMING THE TMP01 VOLTAGE 1kΩ HVOYSLTTEARGEESIS GND 4 REFERENCE 5 VPTAT In the basic fixed setpoint application utilizing a simple resistor AND SENSOR TEMPERATURE ladder voltage divider, the desired temperature setpoints are OUTPUT programmed in the following sequence: TMP01 00333-013 1. Select the desired hysteresis temperature. Figure 13. Detailed Block Diagram 2. Calculate the hysteresis current IVREF. 3. Select the desired setpoint temperatures. TEMPERATURE HYSTERESIS 4. Calculate the individual resistor divider ladder values The temperature hysteresis is the number of degrees beyond needed to develop the desired comparator setpoint voltages the original setpoint temperature that must be sensed by the at SET HIGH and SET LOW. TMP01 before the setpoint comparator is reset and the output disabled. Figure 14 shows the hysteresis profile. The hysteresis is programmed by the user by setting a specific load on the reference voltage output VREF. This output current I is also VREF called the hysteresis current, which is mirrored internally and fed to a buffer with an analog switch. Rev. E | Page 8 of 20

TMP01 The hysteresis current is readily calculated. For example, for resistor divider ratios. The comparator input bias current 2 degrees of hysteresis, I = 17 μA. Next, the setpoint (inputs SET HIGH, SET LOW) drops to less than 1 nA (typ) VREF voltages, V and V , are determined using the VPTAT when the comparator is tripped. This can account for some SETHIGH SETLOW scale factor of 5 mV/K = 5 mV/(°C + 273.15), which is 1.49 V setpoint voltage error, equal to the change in bias current times for 25°C. Then, calculate the divider resistors, based on those the effective setpoint divider ladder resistance to ground. setpoints. The equations used to calculate the resistors are The thermal mass of the TMP01 package and the degree of V = (T + 273.15) (5 mV/°C) thermal coupling to the surrounding circuitry are the largest SETHIGH SETHIGH factors in determining the rate of thermal settling, which V = (T + 273.15) (5 mV/°C) SETLOW SETLOW ultimately determines the rate at which the desired temperature R1 (kΩ) = (VVREF − VSETHIGH)/IVREF = (2.5 V − VSETHIGH)/IVREF measurement accuracy may be reached. Thus, allow sufficient R2 (kΩ) = (V − V )/I time for the device to reach the final temperature. The typical SETHIGH SETLOW VREF thermal time constant for the plastic package is approximately R3 (kΩ) = V /I SETLOW VREF 140 seconds in still air. Therefore, to reach the final temperature accuracy within 1%, for a temperature change of 60 degrees, a VVREF = 2.5V 1 8 V+ settling time of 5 time constants, or 12 minutes, is necessary. (VVREF – VSETHIGH)/IVREF = R1 IVREF The setpoint comparator input offset voltage and zero hyster- VSETHIGH 2 7 OVER esis current affect setpoint error. While the 7 μA zero hysteresis (VSETHIGH – VSETLOW)/IVREF = R2 TMP01 current allows the user to program the TMP01 with moderate VSETLOW 3 6 UNDER resistor divider values, it does vary somewhat from device to VSETLOW/IVREF = R3 device, causing slight variations in the actual hysteresis obtained GND 4 5 VPTAT 00333-015 ignr apmramcteidce s. eCtpoominpta vraotlotarg ien panudt otfhfusest t dhier erecstluyl tiimngp ahcytsst ethrees pisr o- Figure 15. TMP01 Setpoint Programming band, and must be included in error calculations. The total R1 + R2 + R3 is equal to the load resistance needed to External error sources to consider are the accuracy of the pro- draw the desired hysteresis current from the reference, or IVREF. gramming resistors, grounding error voltages, and the overall The formulas shown above are also helpful in understanding problem of thermal gradients. The accuracy of the external the calculation of temperature setpoint voltages in circuits other programming resistors directly impacts the resulting setpoint than the standard two-temperature thermostat. If a setpoint accuracy. Thus, in fixed-temperature applications, the user function is not needed, the appropriate comparator should be should select resistor tolerances appropriate to the desired disabled. SET HIGH can be disabled by tying it to V+, SET programming accuracy. Resistor temperature drift must be LOW by tying it to GND. Either output can be left taken into account also. This effect can be minimized by unconnected. selecting good quality components, and by keeping all com- ponents in close thermal proximity. Applications requiring high 218 248 273 298 323 348 373 398 K measurement accuracy require great attention to detail –55 –25–18 0 25 50 75 100 125 regarding thermal gradients. Careful circuit board layout, °C component placement, and protection from stray air currents –67 –25 0 32 50 77 100 150 200212 257 are necessary to minimize common thermal error sources. °F VPTAT1.09 1.24 1.365 1.49 1.615 1.74 1.865 1.99 00333-016 Apolsino,t tphreo gursaemr smhoinugld d tiavkidee cra lraed tdoe rk eaesp c ltohsee b toot GtoNmD o f( Pthine 4se) ta-s Figure 16. Temperature—VPTAT Scale possible to minimize errors due to IR voltage drops and coup- ling of external noise sources. In any case, a 0.1 μF capacitor for UNDERSTANDING ERROR SOURCES power supply bypassing is always recommended at the chip. The accuracy of the VPTAT sensor output is well characterized SAFETY CONSIDERATIONS IN HEATING AND and specified; however, preserving this accuracy in a heating or COOLING SYSTEM DESIGN cooling control system requires some attention to minimizing the various potential error sources. The internal sources of Designers should anticipate potential system fault conditions, setpoint programming error include the initial tolerances and which may result in significant safety hazards, which are outside temperature drifts of the reference voltage VREF, the setpoint the control of and cannot be corrected by the TMP01-based comparator input offset voltage and bias current, and the circuit. Observe governmental and industrial regulations hysteresis current scale factor. When evaluating setpoint regarding safety requirements and standards for such designs programming errors, remember that any VREF error where applicable. contribution at the comparator inputs is reduced by the Rev. E | Page 9 of 20

TMP01 APPLICATIONS INFORMATION SELF-HEATING EFFECTS PRESERVING ACCURACY OVER WIDE TEMPERATURE RANGE OPERATION In some applications, the user should consider the effects of self-heating due to the power dissipated by the open-collector The TMP01 is unique in offering both a wide range temper- outputs, which are capable of sinking 20 mA continuously. ature sensor and the associated detection circuitry needed Under full load, the TMP01 open-collector output device is to implement a complete thermostatic control function in dissipating one monolithic device. While the voltage reference, setpoint comparators, and output buffer amplifiers have been carefully P = 0.6 V × .020A = 12 mW DISS compensated to maintain accuracy over the specified temper- which in a surface-mount SOIC package accounts for a ature range, the user has an additional task in maintaining the temperature increase due to self-heating of accuracy over wide operating temperature ranges in the ΔT = PDISS × θJA = .012 W × 158°C/W = 1.9°C application. This self-heating effect directly affects the accuracy of the Since the TMP01 is both sensor and control circuit, in many TMP01 and will, for example, cause the device to activate applications it is possible that the external components used to the OVER output 2 degrees early. program and interface the device may be subjected to the same temperature extremes. Thus, it may be necessary to locate Bonding the package to a moderate heat sink limits the self- components in close thermal proximity to minimize large heating effect to approximately: temperature differentials, and to account for thermal drift ΔT = P × θ = .012 W × 43°C/W = 0.52°C DISS JC errors, such as resistor matching tempcos, amplifier error drift, which is a much more tolerable error in most systems. The and the like, where appropriate. Circuit design with the TMP01 VREF and VPTAT outputs are also capable of delivering requires a slightly different perspective regarding the thermal sufficient current to contribute heating effects and should not behavior of electronic components. be ignored. THERMAL RESPONSE TIME BUFFERING THE VOLTAGE REFERENCE The time required for a temperature sensor to settle to a speci- The reference output VREF is used to generate the temper- fied accuracy is a function of the thermal mass of the sensor, ature setpoint programming voltages for the TMP01 and also and the thermal conductivity between the sensor and the object to determine the hysteresis temperature band by the reference being sensed. Thermal mass is often considered equivalent to load current I . The on-board output buffer amplifier is capacitance. VREF typically capable of 500 μA output drive into as much as 50 pF Thermal conductivity is commonly specified using the symbol load (maximum). Exceeding this load affects the accuracy Q, and can be thought of as the reciprocal of thermal resistance. of the reference voltage, could cause thermal sensing errors It is commonly specified in units of degrees per watt of power due to dissipation, and may induce oscillations. Selection of transferred across the thermal joint. Thus, the time required a low drift buffer functioning as a voltage follower with high for the TMP01 to settle to the desired accuracy is dependent input impedance ensures optimal reference accuracy, and on the package selected, the thermal contact established in that does not affect the programmed hysteresis current. Amplifiers particular application, and the equivalent power of the heat which offer the low drift, low power consumption, and low cost source. In most applications, the settling time is probably best appropriate to this application include the OP295, and members determined empirically. of the OP90, OP97, OP177 families, and others as shown in the following applications circuits. With excellent drift and noise characteristics, VREF offers a good voltage reference for data acquisition and transducer excitation applications as well. Output drift is typically better than −10 ppm/°C, with 315 nV/√Hz (typ) noise spectral density at 1 kHz. Rev. E | Page 10 of 20

TMP01 SWITCHING LOADS WITH THE OPEN-COLLECTOR Figure 19 shows a similar circuit for turning on an n-channel OUTPUTS MOSFET, except that now the gate to source voltage is positive. For this reason, an external transistor must be used as an In many temperature sensing and control applications, some inverter so that the MOSFET turns on when the UNDER type of switching is required. Whether it be to turn on a heater output pulls down. when the temperature goes below a minimum value or to turn off a motor that is overheating, the open-collector outputs TEMPERATURE OVER and UNDER can be used. For the majority of VREF SENSOR AND VPTAT V+ 1 8 applications, the switches used need to handle large currents on R1 RVEOFELRTAENGCEE 12..24kkΩΩ ((61V2V)) the order of 1 A and above. Because the TMP01 is accurately 2 7 NC 5% IRFR9024 + measuring temperature, the open-collector outputs should R2 WINDOW OR EQUIV. COMPARATOR handle less than 20 mA of current to minimize self-heating. 3 6 HEATING The OVER and UNDER outputs should not drive the equip- R3 ELEMENT ment directly. Instead, an external switching device is required 4 HYSTERESIS 5 NC GENERATOR to handle the large currents. Some examples of these are relays, TMP01 power MOSFETs, thyristors, IGBTs, and Darlingtons. NC = NO CONNECT 00333-018 Figure 17 through Figure 21 show a variety of circuits where the Figure 18. Driving a P-Channel MOSFET TMP01 controls a switch. The main consideration in these circuits, such as the relay in Figure 17, is the current required to VREF TSEEMNPSEORRA TAUNRDE VPTAT V+ 1 8 activate the switch. VOLTAGE R1 REFERENCE 4.7kΩ 4.7kΩ HELEEAMTIENNGT 12V 2 7 NC TEMPERATURE 1 VREF SENSOR AND VPTAT 8 R2 COWMPINADROAWTOR IRF130 VOLTAGE IN4001 MOTOR 3 6 2N1711 R1 REFERENCE OR EQUIV. SHUTDOWN R3 2 7 4 5 NC R2 COWMPINADROAWTOR 260C4O-1T2O-311 GHYESNTEERRAETSOIRS TMP01 R3 3 6 NC = NO CONNECT 00333-019 4 5 Figure 19. Driving an N-Channel MOSFET HYSTERESIS GENERATOR TMP01 00333-017 Ibseonlaetfeitds goaf tpeo bwipeor lMarO trSaFnEsiTsst owrsit (hI GbiBpTol)a cro tmrabnisniset omrsa,n ayn odf atrhee Figure 17. Reed Relay Drive used for a variety of high power applications. Because IGBTs It is important to check the particular relay to ensure that the have a gate similar to MOSFETs, turning on and off the devices current needed to activate the coil does not exceed the TMP01’s is relatively simple as shown in Figure 20. recommended output current of 20 mA. This is easily deter- The turn-on voltage for the IGBT shown (IRGBC40S) is mined by dividing the relay coil voltage by the specified coil between 3.0 V and 5.5 V. This part has a continuous collector resistance. Keep in mind that the inductance of the relay creates current rating of 50 A and a maximum collector-to-emitter large voltage spikes that can damage the TMP01 output unless voltage of 600 V, enabling it to work in very demanding protected by a commutation diode across the coil, as shown. applications. The relay shown has a contact rating of 10 W maximum. If a relay capable of handling more power is desired, the larger 1 VREF TSEEMNPSEORRA TAUNRDE VPTAT 8 V+ contacts probably require a commensurately larger coil, with VOLTAGE MOTOR R1 REFERENCE 4.7kΩ 4.7kΩ CONTROL lower coil resistance and thus higher trigger current. As the 2 7 NC contact power handling capability increases, so does the current R2 WINDOW IRGBC40S needed for the coil. In some cases, an external driving transistor COMPARATOR 3 6 2N1711 should be used to remove the current load on the TMP01. R3 Power FETs are popular for handling a variety of high current 4 HYSTERESIS 5 NC GENERATOR dc loads. Figure 18 shows the TMP01 driving a p-channel TMP01 MpuOt tSrFaEnTsi sttroarn tsuisrtnosr ofonr, tah sei mgaptlee ohfe tahtee rM ciOrcSuFiEt.T W ish penu ltlhede oduotw-n NC = NO CONNECT 00333-020 Figure 20. Driving an IGBT to approximately 0.6 V, turning it on. For most MOSFETs, a gate-to-source voltage, or Vgs, on the order of −2 V to −5 V is sufficient to turn the device on. Rev. E | Page 11 of 20

TMP01 The last class of high power devices discussed here are Thus, the output taken from the collector of Q2 is identical thyristors, which includes SCRs and Triacs. Triacs are a useful to the output of the TMP01. By picking a transistor that can alternative to relays for switching ac line voltages. The 2N6073A accommodate large amounts of current, many high power shown in Figure 21 is rated to handle 4A (rms). The opto- devices can be switched. isolated MOC3011 Triac features excellent electrical isolation from the noisy ac line and complete control over the high power TEMPERATURE VREF SENSOR AND VPTAT V+ Triac with only a few additional components. 1 VOLTAGE 8 R1 REFERENCE 4.7kΩ IC TEMPERATURE 2 7 2N1711 VREF SENSOR AND VPTAT V+ = 5V 1 VOLTAGE 8 LOAD AC R2 COWMPINADROAWTOR R1 REFERENCE 300Ω 3 6 Q1 2 7 NC R3 R2 WINDOW 1 6 150Ω COMPARATOR 4 5 3 6 2 MOC90115 HYSTERESIS R3 4 5 NC 3 4 2N6073A GENERATOR TMP01 00333-022 HYSTERESIS Figure 22. An External Resistor Minimizes Self-Heating GENERATOR TMP01 NC = NO CONNECT 00333-021 1 VREF TSEEMVNOPSELORTRAA GTAUENRDE VPTAT 8 V+ IC Figure 21. Controlling the 2N6073A Triac R1 REFERENCE 4.7kΩ 4.7kΩ 2N1711 HIGH CURRENT SWITCHING 2 7 2N1711 R2 WINDOW Internal dissipation due to large loads on the TMP01 outputs COMPARATOR 3 6 Q1 Q2 causes some temperature error due to self-heating. External R3 transistors remove the load from the TMP01, so that virtually 4 5 no power is dissipated in the internal transistors and no self- HYSTERESIS hexeaamtinpgle os cucsuinrsg. Fexigteurrne a2l 2t rtahnrsoiustgohr sF. iTguhree s 2im4 pshleoswt c aa sfee,w u sing a GENERATOR TMP01 00333-023 Figure 23. Second Transistor Maintains Polarity of TMP01 Output single transistor on the output to invert the output signal is An example of a higher power transistor is a standard Darlington shown in Figure 22. When the open collector of the TMP01 configuration as shown in Figure 24. The part chosen, TIP-110, turns on and pulls the output down, the external transistor Q1 can handle 2 A continuous which is more than enough to base is pulled low, turning off the transistor. Another transistor control many high power relays. In fact, the Darlington itself can be added to reinvert the signal as shown in Figure 23. Now, can be used as the switch, similar to MOSFETs and IGBTs. when the output of the TMP01 is pulled down, the first transis- tor, Q1, turns off and its collector goes high, which turns Q2 on, pulling its collector low. 12V RELAY MOTOR SWITCH TEMPERATURE IC VREF SENSOR AND VPTAT V+ 1 VOLTAGE 8 TIP-110 R1 REFERENCE 4.7kΩ 4.7kΩ 2 7 2N1711 R2 WINDOW COMPARATOR 3 6 R3 4 5 HYSTERESIS GENERATOR TMP01 00333-024 Figure 24. Darlington Transistor Can Handle Large Currents Rev. E | Page 12 of 20

TMP01 V+ BUFFERING THE TEMPERATURE OUTPUT PIN TEMPERATURE VREF SENSOR AND VPTAT The VPTAT sensor output is a low impedance dc output voltage 1 VOLTAGE 8 with a 5 mV/K temperature coefficient, that is useful in multiple R1 REFERENCE 10kΩ measurement and control applications. In many applications, 2 7 0.1µF this voltage needs to be transmitted to a central location for R2 COWMPINADROAWTOR V+ processing. The buffered VPTAT voltage output is capable of 3 6 500 μA drive into 50 pF (maximum). R3 100Ω VOUT VPTAT Cciorcnusiidtreyr teox teenrnsualr ea macpcluifriearcsy f, oarn idn tteor fmaciinnigm VizPeT lAoTad tion egx wtehrincahl 4 GHYESNTEERRAETSOIRS TMP01 5 V–OP177 CL 00333-025 could create dissipation-induced temperature sensing errors. Figure 25. Buffer VPTAT to Handle Difficult Loads An excellent general-purpose buffer circuit using the OP177 is 4 mA TO 20 mA CURRENT LOOP shown in Figure 25. It is capable of driving over 10 mA, and Another common method of transmitting a signal over long remains stable under capacitive loads of up to 0.1 μF. Other distances is to use a 4 mA to 20 mA loop, as shown in Figure 27. interfacing ideas are also provided in this section. An advantage of using a 4 mA to 20 mA loop is that the DIFFERENTIAL TRANSMITTER accuracy of a current loop is not compromised by voltage drops In noisy industrial environments, it is difficult to send an across the line. One requirement of 4 mA to 20 mA circuits is accurate analog signal over a significant distance. However, that the remote end must receive all of its power from the loop, by sending the signal differentially on a wire pair, these errors meaning that the circuit must consume less than 4 mA. can be significantly reduced. Because the noise is picked up Operating from 5 V, the quiescent current of the TMP01 is equally on both wires, a receiver with high common-mode 500 μA maximum, and the OP90s is 20 μA maximum, totaling input rejection can be used to cancel out the noise very effec- less than 4 mA. Although not shown, the open collector outputs tively at the receiving end. Figure 26 shows two amplifiers used and temperature setting pins can be connected to do any local to send the signal differentially, and an excellent differential control of switching. receiver, the AMP03, which features a common-mode rejection ratio of 95 dB at dc and very low input and drift errors. V+ TEMPERATURE VREF SENSOR AND VPTAT 1 8 VOLTAGE R1 REFERENCE 2 7 R2 WINDOW COMPARATOR 10kΩ 3 6 R3 50Ω VPTAT V+ 4 5 1/2 HYSTERESIS OP297 GENERATOR TMP01 10kΩ 10kΩ VOUT AMP03 50Ω OP1/2297 V– 00333-026 Figure 26. Send the Signal Differentially for Noise Immunity Rev. E | Page 13 of 20

TMP01 The current is proportional to the voltage on the VPTAT values are shown in the circuit. The OP90 is chosen for this output, and is calibrated to 4 mA at a temperature of −40°C, to circuit because of its ability to operate on a single supply and its 20 mA for +85°C. The main equation governing the operation high accuracy. For initial accuracy, a 10 kΩ trim potentiometer of this circuit gives the current as a function of VPTAT can be included in series with R3, and the value of R3 lowered to 95 kΩ. The potentiometer should be adjusted to produce an 1 ⎛VPTAT×R5 VREF×R3⎛ R5⎞⎞ I = ⎜ − ⎜1+ ⎟⎟ output current of 12.3 mA at 25°C. OUT R6⎝ R2 R3+R1 ⎝ R2⎠⎠ TEMPERATURE-TO-FREQUENCY CONVERTER The resulting temperature coefficient of the output current is Another common method of transmitting analog information 128 μA/°C. is to convert a voltage to the frequency domain. This is easily 1 8 VREF V+ 5V TO 13.2V done with any of the low cost monolithic voltage-to-frequency TMP01 converters (VFCs) available, which feature a robust, open- 4 5 collector digital output. A digital signal is immune to noise GND VPTAT R1 and voltage drops because the only important information is 243kΩ the frequency. As long as the conversions between temperature and frequency are done accurately, the temperature data can be 2 7 R2 OP90 6 2N1711 successfully transmitted. 39.2kΩ R3 100kΩ 3 4 A simple circuit to do this combines the TMP01 with an AD654 VFC, as shown in Figure 28. The AD654 outputs a square wave that is proportional to the dc input voltage according to the R6 following equation: 100Ω 4–20mA R5 V 100kΩ F = IN RL 00333-027 By simOpUlTy co1n0ne(Rct1in+gR t2h)eC VTPTAT output to the input of the Figure 27. 4mA to 20 mA Current Loop AD654, the 5 mV/°C temperature coefficient gives a sensitivity To determine the resistor values in this circuit, first note that of 25 Hz/°C, centered around 7.5 kHz at 25°C. The trimming VREF remains constant over temperature. Thus, the ratio of resistor R2 is needed to calibrate the absolute accuracy of the R5 over R2 must give a variation of I from 4 mA to 20 mA OUT AD654. For more information on that part, consult the AD654 as VPTAT varies from 1.165 V at −40°C to 1.79 V at +85°C. data sheet. Finally, the AD650 can be used to accurately convert The absolute value of the resistors is not important, only the the frequency back to a dc voltage on the receiving end. ratio. For convenience, 100 kΩ is chosen for R5. Once R2 is calculated, the value of R3 and R1 is determined by substituting 4 mA for I and 1.165 V for VPTAT and solving. The final OUT V+ TEMPERATURE VREF SENSOR AND VPTAT 1 8 VOLTAGE R1 REFERENCE 2 7 V+ R2 COWMPINADROAWTOR V+ 0.C1µTF 5kΩ 3 6 8 6 7 1 R3 VPTAT AD654 4 5 4 OSC FOUT HYSTERESIS GENERATOR TMP01 3 R1 5 2 1.8kΩ 500RΩ2 00333-028 Figure 28. Temperature-to-Frequency Converter Rev. E | Page 14 of 20

TMP01 OP290 V+ 1 VREF TSEEMNPSEORRA TAUNRDE VPTAT 8 1 IL300XC V+ VOLTAGE R1 REFERENCE V+ 6 2 2 7 2 7 REF43 4 100kΩ 2 R2 WINDOW OP290 6 V+ 3 COMPARATOR 6 3 4 3 6 2.5V2 7 680pF IN4148 1.16V TO 1.7V R3 4 I1 I2 5 OP90 6 4 5 HYSTERESIS 3 4 GENERATOR R1 470kΩ TMP01 ISOLATION 100kΩ 604kΩ BARRIER 680pF 00333-029 Figure 29. Isolation Amplifier ISOLATION AMPLIFIER output voltage equal to VPTAT at any particular temperature. For example, at room temperature, VPTAT = 1.49 V, so adjust In many industrial applications, the sensor is located in an envi- R2 until V = 1.49 V as well. Both the REF43 and the OP90 ronment that needs to be electrically isolated from the central OUT operate from a single supply, and contribute no significant error processing area. Figure 29 shows a simple circuit that uses an due to drift. 8-pin optoisolator (IL300XC) that can operate across a 5,000 V barrier. IC1 (an OP290 single-supply amplifier) is used to drive In order to avoid the accuracy trim, and to reduce board space, the LED connected between Pin 1 and Pin 2. The feedback complete isolation amplifiers are available, such as the high actually comes from the photodiode connected from Pin 3 to accuracy AD202. Pin 4. The OP290 drives the LED such that there is enough OUT-OF-RANGE WARNING current generated in the photodiode to exactly equal the current By connecting the two open-collector outputs of the TMP01 derived from the VPTAT voltage across the 470 kΩ resistor. together into a wired-OR configuration, a temperature out- On the receiving end, an OP90 converts the current from the of-range warning signal is generated. This can be useful in second photodiode to a voltage through its feedback resistor R2. sensitive equipment calibrated to work over a limited temper- Note that the other amplifier in the dual OP290 is used to buffer ature range. the 2.5 V reference voltage of the TMP01 for an accurate, low R1, R2, and R3 in Figure 30 are chosen to give a temperature drift LED bias level without affecting the programmed hyster- range of 10°C around room temperature (25°C). Thus, if the esis current. A REF43 (a precision 2.5 V reference) provides an temperature in the equipment falls below 15°C or rises above accurate bias level at the receiving end. 35°C, the OVER or UNDERoutput, respectively, goes low and To understand this circuit, it helps to examine the overall turns the LED on. The LED may be replaced with a simple pull- equation for the output voltage. First, the current (I1) in the up resistor to give a logic output for controlling the instrument, photodiode is set by or any of the switching devices discussed above can be used. 2.5V−VPTAT V+ I = 1 470kΩ VREF TSEEMNPSEORRA TAUNRDE VPTAT LED 1 8 VOLTAGE Note that the IL300XC has a gain of 0.73 (typical) with a R1 REFERENCE 200Ω 47.5kΩ minimum and maximum of 0.693 and 0.769, respectively. 2 7 Because this is less than 1.0, R2 must be larger than R1 to R2 WINDOW 4.99kΩ COMPARATOR achieve overall unity gain. To show this, the full equation is 3 6 V =2.5V−I R = R3 OUT 2 2 71.5kΩ 4 5 VPTAT ⎛2.5V−VPTAT⎞ HYSTERESIS 2.5V −0.7⎜⎜⎝ 470kΩ ⎟⎟⎠644kΩ=VPTAT GENERATOR TMP01 00333-030 A trim is included for R2 to correct for the initial gain accuracy Figure 30. Out-of-Range Warning of the IL300XC. To perform this trim, simply adjust for an Rev. E | Page 15 of 20

TMP01 TRANSLATING 5 mV/K TO 10 mV/°C However, the gain from VPTAT to the output is two, so that 5 mV/K becomes 10 mV/°C. Thus, for a temperature of 80°C, A useful circuit shown in Figure 31 translates the VPTAT the output voltage is 800 mV. Circuit errors will be due prima- output voltage, which is calibrated in Kelvins, into an output rily to the inaccuracies of the resistor values. Using 1% resistors, that can be read directly in degrees Celsius on a voltmeter the observed error was less than 10 mV, or 1°C. The 10 pF display. feedback capacitor helps to ensure against oscillations. For To accomplish this, an external amplifier is configured as a better accuracy, an adjustment potentiometer can be added in differential amplifier. The resistors are scaled so the VREF series with either 100 kΩ resistor. voltage exactly cancels the VPTAT voltage at 0.0°C. TRANSLATING VPTAT TO THE FAHRENHEIT SCALE 10pF A similar circuit to the one shown in Figure 31 can be used 105kΩ 4.22kΩ to translate VPTAT into an output that can be read directly in +15V degrees Fahrenheit, with a scaling of 10 mV/°F. Only unity gain VREF 1 100kΩ 2 7 or less is available from the first stage differentiating circuit, so TMP01 5 4.12kΩ 487Ω OP177 6 V(VOOUUTT = = ( 10.00mVV @/° CT) = 0.0°C) tchoen vseercsoionnd taom thpeli Ffiaehr rpernohveidite ssc aa lgea. iUns oinf gtw thoe t oci rccoumitp ilne tFe itghuer e 32, VPTAT 3 4 a temperature of 0.0°F gives an output of 0.00 V. At room temp- 100kΩ –15V 00333-031 eorpaetruartei n(g7 0r°aFn)g, et htrea onusltaptuets vinotlota g−e4 0is° F7 0to0 m+1V8.5 A°F −. T40h°eC e rtoro +rs8 5a°rCe Figure 31. Translating 5 mV/K to 10 mV/°C essentially the same as for the circuit in Figure 31. 10pF 100kΩ 90.9kΩ 1.0kΩ 100kΩ +15V 6 VREF 1 100kΩ 2 7 7 V(1O0UmTV =/° 0F.)0V @ T = 0.0°F TMP01 6 5 1/2 VPTAT 5 6.49kΩ 121Ω 3 4 1/2 OP297 OP297 100kΩ –15V 00333-032 Figure 32. Translating 5 mV/K to 10 mV/°F Rev. E | Page 16 of 20

TMP01 OUTLINE DIMENSIONS 0.400 (10.16) 0.365 (9.27) 0.355 (9.02) 8 5 0.280 (7.11) 0.250 (6.35) 1 4 0.240 (6.10) 0.325 (8.26) 0.310 (7.87) 0.100 (2.54) 0.300 (7.62) BSC 0.060 (1.52) 0.195 (4.95) 0.210 (5.33) MAX 0.130 (3.30) MAX 0.115 (2.92) 0.015 0.150 (3.81) (0.38) 0.015 (0.38) 0.130 (3.30) MIN GAUGE 0.115 (2.92) SPLEAATNIENG PLANE 00..001140 ((00..3265)) 00..002128 ((00..5466)) 0M.0IN05 (0.13) 0.43M0 A(1X0.92) 0.008 (0.20) 0.014 (0.36) 0.070 (1.78) 0.060 (1.52) 0.045 (1.14) COMPLIANTTO JEDEC STANDARDS MS-001 CONTROLLING DIMENSIONSARE IN INCHES; MILLIMETER DIMENSIONS (RCINEOFRPEANRREERENN LCTEEHA EODSNSEL MSY)AAAYNR BDEE AR CROOEU NNNFODIGETUDAR-POEPFDRFOA INSPC RWHIAH ETOEQL UFEIO VORAR LU EHSNAETL ISFN FLDOEEARSDIGSN.. 070606-A Figure 33. .8-Lead Plastic Dual In-Line Package [PDIP] Narrow Body (N-8) Dimensions shown in inches and (millimeters) 5.00(0.1968) 4.80(0.1890) 8 5 4.00 (0.1574) 6.20 (0.2441) 3.80 (0.1497) 1 4 5.80 (0.2284) 1.27 (0.0500) 0.50 (0.0196) BSC 1.75 (0.0688) 0.25 (0.0099) 45° 0.25 (0.0098) 1.35 (0.0532) 8° 0.10 (0.0040) 0° COPLANARITY 0.51 (0.0201) 0.10 SEATING 0.31 (0.0122) 0.25 (0.0098) 10..2470 ((00..00510507)) PLANE 0.17 (0.0067) COMPLIANTTO JEDEC STANDARDS MS-012-AA C(RINOEFNPEATRRREOENNLCLTEIHN EOGSN EDLSIYM)AEANNRDSEI AORRNOESU NANORDEET DAIN-PO MPFRIFLO LMPIIMRLELIATIMTEEER TFSEO; RIRN ECUQHSU EDI VIINMA LEDENENSSTIIOGSN NFS.OR 012407-A Figure 34. 8-Lead Standard Small Outline package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) Rev. E | Page 17 of 20

TMP01 REFERENCE PLANE 0.5000 (12.70) 0.1850 (4.70) MIN 0.1650 (4.19) 0.2500 (6.35) MIN 0.1000 (2.54) 0.0500 (1.27) MAX BSC 0.1600 (4.06) 0.1400 (3.56) 5 0.3700 (9.40)0.3350 (8.51) 0.3350 (8.51)0.3050 (7.75) 0(B.52.S00C080) 324 867 00..00425700 ((10..1649)) 0.0190 (0.48) 0.1000 1 (2.54) 0.0400 (1.02) MAX 0.0160 (0.41) BSC 0.0340 (0.86) 0.0210 (0.53) 0.0280 (0.71) 0.0400 (1.02) 0.0160 (0.41) 0.0100 (0.25) 45° BSC BASE & SEATING PLANE COMPLIANTTO JEDEC STANDARDS MO-002-AK C(RINOEFNPEATRRREOENNLCLTEIHN EOGSN EDLSIYM)AEANNRDSEI AORRNOESU NANORDEET DAIN-PO IPFNRFCO HINPECRSHI;A METEQIL UFLIOIVMRAE LUTEESNRET ISDN I FMDOEERSNISGINO.NS 022306-A Figure 35. 8-Pin Metal Header [TO-99] (H-08) Dimensions shown in inches and (millimeters) ORDERING GUIDE Model/Grade Temperature Range Package Description Package Option TMP01ES −40°C to +85°C 8-Lead SOIC_N R-8 TMP01ES-REEL −40°C to +85°C 8-Lead SOIC_N R-8 TMP01ESZ1 −40°C to +85°C 8-Lead SOIC_N R-8 TMP01ESZ-REEL1 −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FP −40°C to +85°C 8-Lead PDIP N-8 TMP01FPZ1 −40°C to +85°C 8-Lead PDIP N-8 TMP01FS −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FS-REEL −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FS-REEL7 −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FSZ1 −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FSZ-REEL1 −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FSZ-REEL71 −40°C to +85°C 8-Lead SOIC_N R-8 TMP01FJ −40°C to +85°C 8-Pin Metal Header (TO-99) H-08 1 Z = RoHS Compliant Part. Rev. E | Page 18 of 20

TMP01 NOTES Rev. E | Page 19 of 20

TMP01 NOTES ©1993–2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D00333-0-7/09(E) Rev. E | Page 20 of 20

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: TMP01FS TMP01ES-REEL TMP01FSZ-REEL7 TMP01FSZ TMP01ESZ-REEL TMP01ES TMP01FS-REEL7 TMP01FS-REEL TMP01FSZ-REEL TMP01ESZ TMP01FPZ TMP01FJ