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ICGOO电子元器件商城为您提供TLV803SDBZR由Texas Instruments设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TLV803SDBZR价格参考¥3.00-¥3.75。Texas InstrumentsTLV803SDBZR封装/规格:PMIC - 监控器, 开路漏极或开路集电极 监控器 1 通道 SOT-23-3。您可以下载TLV803SDBZR参考资料、Datasheet数据手册功能说明书,资料中有TLV803SDBZR 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC VOLT SUPERVISR 2.93V SOT23-3监控电路 3P Vltg Supervisor

DevelopmentKit

TLV803SEVM-019

产品分类

PMIC - 监控器

品牌

Texas Instruments

产品手册

http://www.ti.com/litv/sbvs157b

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

电源管理 IC,监控电路,Texas Instruments TLV803SDBZR-

NumberofInputsMonitored

4 Input

数据手册

点击此处下载产品Datasheet

产品型号

TLV803SDBZR

产品种类

监控电路

人工复位

Manual Reset

供应商器件封装

SOT-23-3

其它名称

296-29196-6

包装

Digi-Reel®

受监控电压数

1

商标

Texas Instruments

复位

低有效

复位超时

最小为 120 ms

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23-3

工作温度

-40°C ~ 125°C

工作电源电流

20 uA

工厂包装数量

3000

最大工作温度

+ 125 C

标准包装

1

电压-阈值

2.93V

电池备用开关

No Backup

电源电压-最大

6 V

电源电压-最小

1.1 V

监视器

No Watchdog

类型

简单复位/加电复位

系列

TLV803S

被监测输入数

4 Input

输出

开路漏极或开路集电极

输出类型

Active Low, Open Drain

阈值电压

2.5 V, 3 V, 3.3 V, 5 V

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PDF Datasheet 数据手册内容提取

Product Sample & Technical Tools & Support & Folder Buy Documents Software Community TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 TLV8x3 3-Pin Voltage Supervisors with Active-Low, Open-Drain Reset 1 Features 3 Description • 3-PinSOT23Package The TLV8x3 family of supervisory circuits provides 1 circuit initialization and timing supervision, primarily • SupplyCurrent:9µA(Typical) forDSPsandprocessor-basedsystems. • PrecisionSupplyVoltageMonitor: The TLV803, TLV853, and TLV863 are functionally 2.5V,3V,3.3V,5V equivalent. The TLV853 and TLV863 provide an • Power-OnResetGeneratorwith alternatepinoutoftheTLV803. FixedDelayTimeof200ms During power on, RESET asserts when the supply • Pin-for-PinCompatiblewithMAX803 voltage (V ) exceeds 1.1 V. Thereafter, the DD • TemperatureRange:–40°Cto+125°C supervisory circuit monitors V and keeps RESET DD • Open-Drain,RESETOutput active as long as VDD remains below the threshold voltage V . An internal timer delays the return of the IT 2 Applications output to the inactive state (high) to ensure proper system reset. The delay time (t = 200 ms) starts d(typ) • DSPs,Microcontrollers,andMicroprocessors after V exceeds the threshold voltage, V . When DD IT • PortableandBattery-PoweredEquipment the supply voltage drops below the VIT threshold voltage, the output is active (low) again. All the • Set-TopBoxes devices in this family have a fixed sense-threshold • Servers voltage(V )setbyaninternalvoltagedivider. IT • Appliances The product spectrum is designed for supply voltages • ProgrammableControls of 2.5 V, 3 V, 3.3 V, and 5 V. These devices are • IntelligentInstruments available in a 3-pin SOT-23 package. The TLV803 devices are characterized for operation over a • IndustrialEquipment temperaturerangeof –40°Cto+125°C. • AutomotiveSystems DeviceInformation(1) PARTNUMBER PACKAGE BODYSIZE(NOM) TLV8x3 SOT-23(3) 2.92mm×1.30mm (1) Forallavailablepackages,seethepackageoptionaddendum attheendofthedatasheet. TypicalApplication 3.3-V LDO 3.3 V 5 V IN OUT GND V DD DSP/FPGA/ASIC V DD TLV803S RESET RESET GND GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 www.ti.com Table of Contents 1 Features.................................................................. 1 8.4 DeviceFunctionalModes..........................................8 2 Applications........................................................... 1 9 ApplicationandImplementation.......................... 9 3 Description............................................................. 1 9.1 ApplicationInformation..............................................9 4 RevisionHistory..................................................... 2 9.2 TypicalApplication .................................................10 5 DeviceComparison............................................... 3 10 PowerSupplyRecommendations..................... 11 6 PinConfigurationandFunctions......................... 3 11 Layout................................................................... 11 11.1 LayoutGuidelines.................................................11 7 Specifications......................................................... 4 11.2 LayoutExample....................................................11 7.1 AbsoluteMaximumRatings......................................4 12 DeviceandDocumentationSupport................. 12 7.2 ESDRatings..............................................................4 7.3 ThermalInformation..................................................4 12.1 DeviceSupport ....................................................12 7.4 RecommendedOperatingConditions.......................4 12.2 DocumentationSupport .......................................12 7.5 ElectricalCharacteristics...........................................5 12.3 RelatedLinks........................................................12 7.6 SwitchingCharacteristics..........................................5 12.4 CommunityResources..........................................12 7.7 TypicalCharacteristics..............................................6 12.5 Trademarks...........................................................13 12.6 ElectrostaticDischargeCaution............................13 8 DetailedDescription.............................................. 7 12.7 Glossary................................................................13 8.1 Overview...................................................................7 13 Mechanical,Packaging,andOrderable 8.2 FunctionalBlockDiagram.........................................7 Information........................................................... 13 8.3 FeatureDescription...................................................7 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionB(August2011)toRevisionC Page • AddedTLV853devicetodatasheet ..................................................................................................................................... 1 • ChangeddevicepartnumbersshownonpageheadertoshowsingleTLV803deviceinsteadoflettered-deviceversions 1 • AddedDeviceInformationandESDRatingstables............................................................................................................... 1 • AddedDetailedDescription,ApplicationandImplementation,Power-SupplyRecommendations,Layout,Deviceand DocumentationSupport,andMechanical,Packaging,andOrderableInformationsections................................................. 1 • ChangedApplicationssectionbullets .................................................................................................................................... 1 • DeletedpinoutsfromfrontpageandmovedtoPinConfigurationsandFunctionssection................................................... 1 • DeletedPackage/OrderingInformationtable;forpackageandorderinginformation,seethepackageoption addendumattheendofthedatasheet................................................................................................................................. 3 • Changedall"free-air"to"junction"andall"T "to"T"foralltemperaturerangesthroughoutdatasheet............................ 4 A J • Changed"free-airtemperature"to"junctiontemperature"inAbsoluteMaximumRatingsconditionstatement ...................4 • DeletedSolderingtemperaturefromAbsoluteMaximumRatingstable ............................................................................... 4 • ChangedThermalInformationtable;updatedthermalresistancevaluesforallparameters................................................ 4 • Changed"free-airtemperature"to"junctiontemperature"inElectricalCharacteristicsconditionstatement .......................5 • ChangedtemperaturenotedinSwitchingCharacteristicsconditionstatement .................................................................... 5 ChangesfromRevisionA(June2011)toRevisionB Page • AddednewparagraphregardingTLV863toDescriptionsection........................................................................................... 1 • AddedTLV863pinouttofrontpage....................................................................................................................................... 1 • AddedTLV863MtoPackage/OrderingInformation................................................................................................................ 3 • AddedTLV863toThermalInformation.................................................................................................................................. 4 • AddedTLV863MtoNegative-GoingInputThresholdVoltageparameter.............................................................................. 5 • AddedTLV863MtoHysteresisparameter............................................................................................................................. 5 • AddedTLV863toFunctionalBlockDiagram......................................................................................................................... 7 2 SubmitDocumentationFeedback Copyright©2011–2015,TexasInstrumentsIncorporated ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 www.ti.com SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 5 Device Comparison Table1.DeviceThresholdOptions DEVICE THRESHOLDVOLTAGE TLV803Z 2.25V TLV803R 2.64V TLV803S 2.93V TLV803M 4.38V TLV853M 4.38V TLV863M 4.38V Table2.DeviceFamilyComparison DEVICE FUNCTION TLV803 Open-Drain,RESETOutput TLV809 Push-Pull,RESETOutput TLV810 Push-Pull,RESETOutput 6 Pin Configuration and Functions TLV803:DBZPackage TLV853:DBZPackage 3-PinSOT-23 3-PinSOT-23 TopView TopView GND 1 RESET 1 3 VDD 3 VDD RESET 2 GND 2 TLV863:DBZPackage 3-PinSOT-23 TopView RESET 1 3 GND VDD 2 PinFunctions PIN I/O DESCRIPTION NAME TLV803 TLV853 TLV863 GND 1 2 3 — Groundpin. RESETisanopen-drainoutputthatisdriventoalowimpedancestate whenRESETisasserted.RESETremainslow(asserted)forthedelaytime RESET 2 1 1 O (t )afterV exceedsV .Usea10-kΩto1-MΩpullupresistoronthispin. d DD IT– ThepullupvoltageisnotlimitedbyV . DD Supplyvoltagepin.Itisgoodanalogdesignpracticetoplacea0.1-µF VDD 3 3 2 I ceramiccapacitorclosetothispin. Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings(1) overoperatingjunctiontemperaturerange(unlessotherwisenoted) MIN MAX UNIT VDD(2) 0 7 Voltage V Allotherpins(2) –0.3 +7 Maximumlowoutputcurrent,I 5 OL Maximumhighoutputcurrent,I –5 OH Current mA Inputclampcurrent,I (V <0orV >V ) ±20 IK I I DD Outputclampcurrent,I (V <0orV >V ) ±20 OK O O DD Operatingjunctiontemperaturerange,T –40 125 J Temperature °C Storagetemperaturerange,T –65 150 stg (1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommendedOperating Conditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. (2) AllvoltagevaluesarewithrespecttoGND.Forreliableoperationthedeviceshouldnotbeoperatedat7Vformorethant=1000h continuously 7.2 ESD Ratings VALUE UNIT Electrostatic Human-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±2000 V V (ESD) discharge Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2) ±500 (1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess. (2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess. 7.3 Thermal Information TLV8x3 THERMALMETRIC(1) DBZ(SOT-23) UNITS 3PINS R Junction-to-ambientthermalresistance 328.5 °C/W θJA R Junction-to-case(top)thermalresistance 135.4 °C/W θJC(top) R Junction-to-boardthermalresistance 58.3 °C/W θJB ψ Junction-to-topcharacterizationparameter 5.2 °C/W JT ψ Junction-to-boardcharacterizationparameter 59.6 °C/W JB R Junction-to-case(bottom)thermalresistance N/A °C/W θJC(bot) (1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953. 7.4 Recommended Operating Conditions atspecifiedtemperaturerange(unlessotherwisenoted) MIN MAX UNIT V Supplyvoltage 1.1 6 V DD T Operatingjunctiontemperature –40 125 °C J 4 SubmitDocumentationFeedback Copyright©2011–2015,TexasInstrumentsIncorporated ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 www.ti.com SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 7.5 Electrical Characteristics overrecommendedoperatingjunctiontemperaturerange(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT V =2Vto6V,I =500µA 0.2 DD OL V Low-leveloutputvoltage V =3.3V,I =2mA 0.4 V OL DD OL V =6V,I =4mA 0.4 DD OL Power-upresetvoltage(1) I =50µA,V <0.2V 1.1 V OL OL TLV803Z 2.20 2.25 2.30 Negative-goinginput TLV803R 2.58 2.64 2.70 VIT– thresholdvoltage(2) TLV803S TJ=–40°Cto+125°C 2.87 2.93 2.99 V TLV8x3M 4.28 4.38 4.48 TLV803Z 30 TLV803R 35 V Hysteresis T =25°C,I =50µA mV hys J OL TLV803S 40 TLV8x3M 60 V =2V,outputunconnected 9 15 DD I Supplycurrent µA DD V =6V,outputunconnected 20 30 DD I Outputleakagecurrent V =6V 100 nA OH DD (1) ThelowestsupplyvoltageatwhichRESETbecomesvalid.t ≤66.7V/ms. r,VDD (2) Toensurebeststabilityofthethresholdvoltage,placeabypasscapacitor(0.1-µFceramic)nearthesupplyterminals. 7.6 Switching Characteristics overoperatingtemperaturerange(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT t PulsedurationatV V =1.08V to0.92V 1 µs w DD DD IT– IT– t Delaytime V ≥V +0.2V;seeTimingDiagram 120 200 280 ms d DD IT– V DD VIT- 1.1 V t RESET 1 0 t t t d d For V < 1.1 V Undefined DD Behavior of R E S E T Output Figure1. TimingDiagram Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 www.ti.com 7.7 Typical Characteristics atT =25°C,V =4.38V,andV =5.0V(unlessotherwisenoted) J IT– DD 1.2 25 +125°C +125°C 1 +85°C +85°C +25°C 20 +25°C 0°C 0°C 0.8 -40°C -40°C 15 V) A) (OL 0.6 (mD V ID 10 0.4 5 0.2 V = 2.5 V DD 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 I (mA) V (V) OL DD Figure2.Low-LevelOutputVoltagevsLow-LevelOutput Figure3.SupplyCurrentvsSupplyVoltage Current 1.001 1.6 1 (s)m 1.4 D D V 1.2 zed V(V)-IT 00..999998 Duration at 0.18 ali 0.997 e Norm 0.996 m Puls 00..64 ++18255°C°C u +25°C m 0.995 ni 0.2 0°C Mi -40°C 0.994 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 0 0.5 1 1.5 2 2.5 Temperature (°C) (VIT-)-VDD(V) Figure4.Normalizedto25°CNegative-GoingInput Figure5.MinimumPulseDurationAtV vsOverdrive DD ThresholdVoltagevsTemperature Voltage 220 0.8 TLV803M RESETPulled Up to VDD +125°C 210 TLV803Z 0.7 with 22.1-kWResistor +85°C +25°C 0.6 0°C 200 0.5 -40°C s) V) m 190 ( 0.4 t(d VOL 0.3 180 0.2 170 0.1 160 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 0 0.25 0.5 0.75 1 1.25 1.5 Temperature (°C) V (V) DD Figure6.DelayTimevsTemperature Figure7.Power-UpLow-LevelOutputVoltagevsSupply Voltage 6 SubmitDocumentationFeedback Copyright©2011–2015,TexasInstrumentsIncorporated ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 www.ti.com SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 8 Detailed Description 8.1 Overview The TLV803 family of supervisory circuits provides circuit initialization and timing supervision. The TLV853 and TLV863 are both functionally equivalent to the TLV803. These devices output a logic low whenever V drops DD below the negative-going threshold voltage (V ). The output, RESET, remains low for approximately 200 ms IT– after the V voltage exceeds the positive-going threshold voltage (V + V ). These devices are designed to DD IT– hys ignorefasttransientsontheV pin. DD 8.2 Functional Block Diagram TLV8x3 R1 _ Reset RESET VDD Logic + + Timer R2 GND Oscillator Reference Voltage of 1.137 V 8.3 Feature Description 8.3.1 V TransientRejection DD The TLV803 has built-in rejection of fast transients on the V pin. The rejection of transients depends on both DD thedurationandtheamplitudeofthetransient.Theamplitudeofthetransientismeasuredfromthebottomofthe transienttothenegativethresholdvoltageoftheTLV803,asshowninFigure8. V DD VIT- Transient Amplitude tw Duration Figure8. VoltageTransientMeasurement The TLV803 does not respond to transients that are fast duration/low amplitude or long duration/small amplitude. Figure 5 shows the relationship between the transient amplitude and duration needed to trigger a reset. Any combinationofdurationandamplitudeabovethecurvegeneratesaresetsignal. Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 www.ti.com Feature Description (continued) 8.3.2 ResetDuringPowerUpandPowerDown The TLV803 output is valid when V is greater than 1.1 V. When V is less than 1.1 V, the output transistor DD DD turnsoffandbecomeshighimpedance.ThevoltageontheRESETpinrisestothevoltagelevelconnectedtothe pull-up resistor. Figure 9 shows a typical waveform for power-up, assuming the RESET pin has a pull-up resistor connectedtotheV pin. DD VIT-+ VHYS V DD 1.1 V t d RESET Valid Output Figure9. Power-UpResponse 8.3.3 BidirectionalResetPins Some microcontrollers have bidirectional reset pins that act as both inputs and outputs. In a situation where the TLV803 is pulling the RESET line low while the microcontroller is trying the force the RESET line high, a series resistor should be placed between the output of the TLV803 and the RESET pin of the microcontroller to protect against excessive current flow. Figure 10 shows the connection of the TLV803 to a microcontroller using a series resistortodriveabidirectional RESETline. 3.3 V V CC VDD 100 kW Microprocessor TLV803S 47 kW RESET RST GND Figure10. ConnectionToBidirectionalResetPin 8.4 Device Functional Modes 8.4.1 NormalOperation(VDD >Power-UpResetVoltage) When the voltage on VDD is greater than 1.1 V, the RESET signal asserts when V is less than V and DD IT– deassertswhenV isgreaterthanV . DD IT– 8.4.2 PowerOnReset(VDD< Power-UpResetVoltage) WhenthevoltageonVDDislowerthantherequiredvoltagetointernallypulltheassertedoutputtoGND(power- upresetvoltage),bothoutputsareinahigh-impedancestate. 8 SubmitDocumentationFeedback Copyright©2011–2015,TexasInstrumentsIncorporated ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 www.ti.com SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validateandtesttheirdesignimplementationtoconfirmsystemfunctionality. 9.1 Application Information 9.1.1 MonitoringMultipleSupplies Because the TLV803 has an open-drain output, multiple TLV803 outputs can be directly tied together to form a logical OR-ing function for the RESET line. Only one pull-up resistor is required for this configuration. Figure 11 shows two TLV803s connected together to provide monitoring of a 3.3-V power rail and a 5.0-V power rail. A resetisgeneratedifeitherpowerrailfallsbelowthethresholdvoltageofitscorrespondingTLV803. 5.0 V 3.3 V 0.1mF V V V DD 100 kW IO CORE TLV803M Microprocessor RESET RST GND 3.3 V 0.1mF V DD TLV803S RESET GND Figure11. MultipleVoltageRailMonitoring 9.1.2 OutputLevelShifting TheRESEToutputoftheTLV803canbepulledtoamaximumvoltageof6Vandcanbepulledhigherinvoltage than V . It is useful to provide level shifting of the output for cases where the monitored voltage is less than the DD useful logic levels of the load. Figure 12 shows the TLV803Z used to monitor a 2.5-V power rail, with a logic RESETinputtoamicroprocessorthatisconnectedto5.0Vandhas5.0-Vlogiclevels. Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 www.ti.com Application Information (continued) 2.5 V 5.0 V 0.1mF V DD 10 kW TLV803Z Microprocessor RESET RST GND Figure12. OutputVoltageLevelShifting 9.2 Typical Application Figure13showsTLV803SbeingusedtomonitorthesupplyrailforaDSP,FPGA,orASIC. 3.3-V LDO 3.3 V 5 V IN OUT GND V DD DSP/FPGA/ASIC V DD TLV803S RESET RESET GND GND Figure13. TypicalApplication 9.2.1 DesignRequirements This design calls for a 3.3-V rail to be monitored. The design resets if the supply rail falls below 2.93 V. The outputmustsatisfy3.3-VCMOSlogic. 9.2.2 DetailedDesignProcedure SelecttheTLV803Stosatisfythevoltagethresholdrequirement. PlaceapullupresistoronRESETtoVDDinordertosatisfytheoutputlogicrequirement. 10 SubmitDocumentationFeedback Copyright©2011–2015,TexasInstrumentsIncorporated ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 www.ti.com SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 Typical Application (continued) 9.2.3 ApplicationCurves 1.6 s)m 1.4 ( D D V 1.2 at on 1 ati ur 0.8 D e uls 0.6 +125°C m P 0.4 +85°C u +25°C m ni 0.2 0°C Mi -40°C 0 0 0.5 1 1.5 2 2.5 (VIT-)-VDD(V) Figure14. MinimumPulseDurationAtV vsOverdriveThresholdVoltagevsTemperatureVoltage DD 10 Power Supply Recommendations Thesedevicesaredesignedtooperatefromaninputvoltagesupplyrangebetween1.1Vand6V. 11 Layout 11.1 Layout Guidelines PlacetheC decouplingcapacitorclosetothedevice. IN 11.2 Layout Example RPU VDD RESET CIN TLV803 GND Plane Figure15. LayoutExample(DBZPackage) Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 www.ti.com 12 Device and Documentation Support 12.1 Device Support 12.1.1 DevelopmentSupport 12.1.1.1 EvaluationModules An evaluation module (EVM) is available to assist in the initial circuit performance evaluation using the TLV803. The TLV803SEVM-019 evaluation module (and related user guide) can be requested at the Texas Instruments websitethroughtheproductfoldersorpurchaseddirectlyfromtheTIeStore. 12.1.1.2 SpiceModels Computer simulation of circuit performance using SPICE is often useful when analyzing the performance of analog circuits and systems. SPICE models for the TLV803, TLV853, and TLV863 are available through the respectivedeviceproductfoldersunder Tools& Software. 12.2 Documentation Support 12.2.1 RelatedDocumentation • TLV803SEVM-019User'sGuide.LiteraturenumberSLVU461. 12.3 Related Links Table 3 lists quick access links. Categories include technical documents, support and community resources, toolsandsoftware,andquickaccesstosampleorbuy. Table3.RelatedLinks TECHNICAL TOOLS& SUPPORT& PARTS PRODUCTFOLDER SAMPLE&BUY DOCUMENTS SOFTWARE COMMUNITY TLV803 Clickhere Clickhere Clickhere Clickhere Clickhere TLV853 Clickhere Clickhere Clickhere Clickhere Clickhere TLV863 Clickhere Clickhere Clickhere Clickhere Clickhere 12.4 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 12 SubmitDocumentationFeedback Copyright©2011–2015,TexasInstrumentsIncorporated ProductFolderLinks:TLV803 TLV853 TLV863

TLV803,TLV853,TLV863 www.ti.com SBVS157C–APRIL2011–REVISEDSEPTEMBER2015 12.5 Trademarks E2EisatrademarkofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 12.6 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriateprecautions.Failuretoobserveproperhandlingandinstallationprocedurescancausedamage. ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmaybemore susceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications. 12.7 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. Copyright©2011–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:TLV803 TLV853 TLV863

PACKAGE OPTION ADDENDUM www.ti.com 21-Mar-2019 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) TLV803MDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VOUQ & no Sb/Br) TLV803MDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VOUQ & no Sb/Br) TLV803RDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VOSQ & no Sb/Br) TLV803RDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VOSQ & no Sb/Br) TLV803SDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VOTQ & no Sb/Br) TLV803SDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VOTQ & no Sb/Br) TLV803ZDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VORQ & no Sb/Br) TLV803ZDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VORQ & no Sb/Br) TLV853MDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZGM4 & no Sb/Br) TLV853MDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 125 ZGM4 & no Sb/Br) TLV863MDBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VTWM & no Sb/Br) TLV863MDBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 VTWM & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 21-Mar-2019 Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2017 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) TLV803MDBZR SOT-23 DBZ 3 3000 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803MDBZT SOT-23 DBZ 3 250 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803RDBZR SOT-23 DBZ 3 3000 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803RDBZT SOT-23 DBZ 3 250 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803SDBZR SOT-23 DBZ 3 3000 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803SDBZT SOT-23 DBZ 3 250 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803ZDBZR SOT-23 DBZ 3 3000 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV803ZDBZT SOT-23 DBZ 3 250 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV853MDBZR SOT-23 DBZ 3 3000 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV853MDBZT SOT-23 DBZ 3 250 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV863MDBZR SOT-23 DBZ 3 3000 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 TLV863MDBZT SOT-23 DBZ 3 250 179.0 8.4 3.15 2.95 1.22 4.0 8.0 Q3 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2017 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) TLV803MDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 TLV803MDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 TLV803RDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 TLV803RDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 TLV803SDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 TLV803SDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 TLV803ZDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 TLV803ZDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 TLV853MDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 TLV853MDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 TLV863MDBZR SOT-23 DBZ 3 3000 203.0 203.0 35.0 TLV863MDBZT SOT-23 DBZ 3 250 203.0 203.0 35.0 PackMaterials-Page2

4203227/C

PACKAGE OUTLINE DBZ0003A SOT-23 - 1.12 mm max height SCALE 4.000 SMALL OUTLINE TRANSISTOR 2.64 C 2.10 1.12 MAX 1.4 1.2 B A 0.1 C PIN 1 INDEX AREA 1 0.95 3.04 1.9 2.80 3 2 0.5 3X 0.3 0.10 0.2 C A B (0.95) TYP 0.01 0.25 GAGE PLANE 0.20 TYP 0.08 0.6 TYP 0 -8 TYP 0.2 SEATING PLANE 4214838/C 04/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Reference JEDEC registration TO-236, except minimum foot length. www.ti.com

EXAMPLE BOARD LAYOUT DBZ0003A SOT-23 - 1.12 mm max height SMALL OUTLINE TRANSISTOR PKG 3X (1.3) 1 3X (0.6) SYMM 3 2X (0.95) 2 (R0.05) TYP (2.1) LAND PATTERN EXAMPLE SCALE:15X SOLDER MASK SOLDER MASK METAL UNDER METAL OPENING OPENING SOLDER MASK 0.07 MAX 0.07 MIN ALL AROUND ALL AROUND NON SOLDER MASK SOLDER MASK DEFINED DEFINED (PREFERRED) SOLDER MASK DETAILS 4214838/C 04/2017 NOTES: (continued) 4. Publication IPC-7351 may have alternate designs. 5. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com

EXAMPLE STENCIL DESIGN DBZ0003A SOT-23 - 1.12 mm max height SMALL OUTLINE TRANSISTOR PKG 3X (1.3) 1 3X (0.6) SYMM 3 2X(0.95) 2 (R0.05) TYP (2.1) SOLDER PASTE EXAMPLE BASED ON 0.125 THICK STENCIL SCALE:15X 4214838/C 04/2017 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 7. Board assembly site may have different recommendations for stencil design. www.ti.com

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