TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 (cid:2) (cid:2) Direct Upgrades for the TL06x Low-Power Higher Slew Rate and Bandwidth Without BiFETs Increased Power Consumption (cid:2) (cid:2) Low Power Consumption... Available in TSSOP for Small Form-Factor 6.5 mW/Channel Typ Designs (cid:2) On-Chip Offset-Voltage Trimming for Improved DC Performance (1.5 mV, TL031A) description The TL03x series of JFET-input operational amplifiers offer improved dc and ac characteristics over the TL06x family of low-power BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision grades as low as 1.5 mV (TL031A) for greater accuracy in dc-coupled applications. The Texas Instruments improved BiFET process and optimized designs also yield improved bandwidths and slew rates without increased power consumption. The TL03x devices are pin-compatible with the TL06x and can be used to upgrade existing circuits or for optimal performance in new designs. BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors without sacrificing the output drive associated with bipolar amplifiers. This higher input impedance makes the TL3x amplifiers better suited for interfacing with high-impedance sensors or very low-level ac signals. These devices also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption. The TL03x family has been optimized for micropower operation, while improving on the performance of the TL06x series. Designers requiring significantly faster ac response should consider the Excalibur™ TLE206x family of low-power BiFET operational amplifiers. Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input-voltage limits and output swing when operating from a single supply. DC biasing of the input signal is required, and loads should be terminated to a virtual-ground node at midsupply. The TI TLE2426 integrated virtual-ground generator is useful when operating BiFET amplifiers from single supplies. The TL03x devices are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, the TI LinCMOS families of operational amplifiers (TLC prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate, bandwidth requirements, and output loading. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of −55°C to 125°C. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Excalibur is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2001, Texas Instruments Incorporated Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031x, TL031Ax TL032x, TL032Ax TL034x, TL034Ax D, JG, OR P PACKAGE D, JG, OR P PACKAGE D, J, N, OR PW PACKAGE (TOP VIEW) (TOP VIEW) (TOP VIEW) OFFSET N1 1 8 NC 1OUT 1 8 VCC+ 1OUT 1 14 4OUT IN− 2 7 VCC+ 1IN− 2 7 2OUT 1IN− 2 13 4IN− IN+ 3 6 OUT 1IN+ 3 6 2IN− 1IN+ 3 12 4IN+ VCC− 4 5 OFFSET N2 VCC− 4 5 2IN+ VCC+ 4 11 VCC− 2IN+ 5 10 3IN+ 2IN− 6 9 3IN− 2OUT 7 8 3OUT TL031M, TL031AM FK PACKAGE (TOP VIEW) TL032M, TL032AM TL034M, TL034AM 1 FK PACKAGE FK PACKAGE N T (TOP VIEW) (TOP VIEW) E S T + T T F U C − U U − C F CC C C O C CC N O CO N N O NN N N 1 NV N 1I 1 N4 4I 3 2 1 20 19 3 2 1 20 19 3 2 1 20 19 NC 4 18 NC NC 4 18 NC 1IN+ 4 18 4IN+ IN− 5 17 VCC+ 1IN− 5 17 2OUT NC 5 17 NC NC 6 16 NC NC 6 16 NC VCC+ 6 16 VCC− IN+ 7 15 OUT 1IN+ 7 15 2IN− NC 7 15 NC NC 8 14 NC NC 8 14 NC 2IN+ 8 14 3IN+ 9 10 11 12 13 9 10 11 12 13 9 10 11 12 13 NC C−NCN2 NC NC C−NCN+ NC N− UT NCUT N− VC ET VC 2I 2I 2O 3O 3I S F F O NC − No internal connection 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 AVAILABLE OPTIONS PACKAGED DEVICES TA AVTIO M25A°CX OSUMTALLINLE CACRHRIPIER CERDAIPMIC CERDAIPMIC PLADSIPTIC PLADSIPTIC TSSOP (PW) (D) (FK) (J) (JG) (N) (P) TL031ACD TL031ACP 0.8 mV — — — — — TL032ACD TL032ACP TL031CD 0°C to 70°C TL031CP 1.5 mV TL032CD — — — TL034ACN — TL032CP TL034ACD 4 mV TL034CD — — — TL034CN — TL034CPW TL031AID TL031AIP 0.8 mV — — — — — TL032AID TL032AIP TL031ID −40°C to 85°C TL031IP 1.5 mV TL032ID — — — TL034AIN — TL032IP TL034AID 4 mV TL034ID — — — TL034IN — — TL031AMD TL031AMFK TL031AMJG TL031AMP 0.8 mV — — — TL032AMD TL032AMFK TL032AMJG TL032AMP TL031MD TL031MFK −55°C to 125°C TL031MJG TL031MP 1.5 mV TL032MD TL032MFK TL034AMJ TL034AMN — TL032MJG TL032MP TL034AMD TL034AMFK 4 mV TL034MD TL034MFK TL034MJ — TL034MN — — The D and PW packages are available taped and reeled and are indicated by adding an R suffix to device type (e.g., TL034CDR or TL034CPWR). POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 symbol (each amplifier) IN− − OUT IN+ + equivalent schematic (each amplifier) VCC+ Q5 Q14 Q2 D1 Q3 R4 Q6 Q11 IN+ Q8 OUT IN− JF1 JF2 Q10 R7 Q17 R3 R6 Q15 C1 Q12 JF3 JF4 Q1 Q4 Q9 OFFSET N1 See Note A R8 OFFSET N2 Q7 Q16 R1 R2 R5 Q13 VCC− NOTE A: OFFSET N1 and OFFSET N2 are available only on the TL031, TL031A. 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage (see Note 1): V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V CC+ V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −18 V CC− Differential input voltage, V (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30 V ID Input voltage, V (any input) (see Notes 1 and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15 V I Input current, I (each input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1 mA I Output current, I (each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 mA O Total current into V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 mA CC+ Total current out of V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 mA CC− Duration of short-circuit current at (or below) 25°C (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Package thermal impedance, θ (see Note 5): D package (8 pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97°C/W JA D package (14 pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . 86°C/W N package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W P package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85°C/W PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113°C/W Lead temperature 1,6 mm (1 /16 inch) from case for 10 seconds: D, N, P, or PW package . . . . . . . . . 260°C Lead temperature 1,6 mm (1 /16 inch) from case for 60 seconds: J or JG package . . . . . . . . . . . . . . . 300°C Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C stg †Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC−. 2. Differential voltages are at IN+ with respect to IN−. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less. 4. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded. 5. The package thermal impedance is calculated in accordance with JESD 51-7. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C POWER RATING ABOVE TA = 25°C POWER RATING POWER RATING POWER RATING FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW J 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW recommended operating conditions C SUFFIX I SUFFIX M SUFFIX UUNNIITT MIN MAX MIN MAX MIN MAX VCC± Supply voltage ±5 ±15 ±5 ±15 ±5 ±15 V VCC± = ±5 V −1.5 4 −1.5 4 −1.5 4 VVIC CCoommmmoonn-mmooddee iinnppuutt vvoollttaaggee VCC± = ±15 V −11.5 14 −11.5 14 −11.5 14 VV TA Operating free-air temperature 0 70 −40 85 −55 125 °C POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031C and TL031AC electrical characteristics at specified free-air temperature TL031C, TL031AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC±= ±5 V VCC±= ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.54 3.5 0.5 1.5 VO = 0, TTLL003311CC Full range† 4.5 2.5 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003311AACC 25°C 0.41 2.8 0.34 0.8 mmVV Full range† 3.8 1.8 2255°CC ttoo VO = 0, TTLL003311CC 70°C 77.11 55.99 (cid:2)(cid:2)VIO TTiinneeppmmuutppt ooeeffrrffaasstteeuuttrr eevv oocclloottaaeeggffffeeiicciieenntt ooff VVRRISSC === 0055,00 ΩΩ TTLL003311AACC 22 557°0CC°C ttoo 77.11 55.99 2255 μVV//°°CC Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 050,0, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2750°°CC 19 120000 112 120000 ppAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2750°°CC 520 240000 820 240000 ppAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ 0°C 3 4.2 13 14 VV 70°C 3 4.3 13 14 25°C −3 −4.2 −12.5 −13.9 MMaxiimum negattiive peakk VVOOMM−− oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ 0°C −3 −4.1 −12.5 −13.9 VV 70°C −3 −4.2 −12.5 −14 25°C 4 12 5 14.3 AAVVDD Lvvooallrttgaaegg-ees iaagmmnapplll iidffiiiccffaaettriiooennn§§tial RRLL = 1100 kkΩΩ 0°C 3 11.1 4 13.5 VV//mmVV 70°C 4 13.3 5 15.2 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCMMRRRR CCrreeojjeemccmttiiooonnn rr-aamttiiooodde VVVVIOOC === VV00,I CRRRSSm ==iin 55,00 ΩΩ 0°C 70 87 75 94 ddBB 70°C 70 87 75 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rreejjeeccttiioonn rraattiioo VOO = 0,, RSS = 50 Ω 0°C 75 96 75 96 dB (ΔVCC±/ΔVIO) 70°C 75 96 75 96 †Full range is 0°C to 70°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031C and TL031AC electrical characteristics at specified free-air temperature (continued) TL031C, TL031AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC±= ±5 V VCC±= ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 1.9 2.5 6.5 8.4 PPDD TToottaall ppoowweerr ddiissssiippaattiioonn VVOO = 00,, NNoo llooaadd 0°C 1.8 2.5 6.3 8.4 mmWW 70°C 1.9 2.5 6.3 8.4 25°C 192 250 217 280 ICCCC Supppplyy current VOO = 0,, No load 0°C 184 250 211 280 μμA 70°C 189 250 210 280 TL031C and TL031AC operating characteristics at specified free-air temperature TL031C, TL031AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at RRL = 1100 kkΩΩ, CCL = 110000 pFF 0°C 1.8 1 2.6 VV//μμss uunniittyy ggaaiinn†† SSeeee FFiigguurree 11 70°C 2.2 1.5 3.2 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at RRL = 1100 kkΩΩ, CCL = 110000 pFF 0°C 3.7 1.5 5 VV//μμss uunniittyy ggaaiinn†† SSeeee FFiigguurree 11 70°C 4 1.5 5 VVII((PPPP)) == ±±1100 mmVV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 134 127 nnss See Figures 1 and 2 70°C 150 142 VVII((PPPP)) == ±±1100 mmVV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 134 127 nnss See Figure 1 70°C 150 142 VVII((PPPP)) == ±±1100 mmVV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 10% 4% See Figures 1 and 2 70°C 12% 6% f = 10 Hz 61 61 TTLL003311CC 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt ggiinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4611 4611 nnVV//√√HHz TTLL003311AACC 2255°°CC f = 1 kHz 41 41 60 Equivalent input noise In current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF 0°C 1 1.1 MMHHzz See Figure 4 70°C 1 1 25°C 61° 65° VVII == 1100 mmVV φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF 0°C 61° 65° See Figure 4 70°C 60° 64° †For VCC±= ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031I and TL031AI electrical characteristics at specified free-air temperature TL031I, TL031AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC±= ±5 V VCC±= ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.54 3.5 0.5 1.5 VO = 0, TTLL003311II Full range† 5.3 3.3 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003311AAII 25°C 0.41 2.8 0.34 0.8 mmVV Full range† 4.6 2.6 2255°CC ttoo Temperature coefficient VO = 0, TTLL003311II 85°C 66.55 66.22 (cid:2)(cid:2)VIO oiinnffppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003311AAII 2255°8CC5° ttCoo 66.55 66.22 2255 μVV//°°CC VO = 0, IIlonnnppguu-tt t oeofrfffmssee dtt rvvifoot‡llttaaggee VVRISC == 5000, Ω 2255°°CC 00.0044 00.0044 μVV//mmoo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2855°°CC 0.012 01.0405 0.012 01.0405 pnAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2855°°CC 0.22 200.90 0.22 200.90 pnAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −40°C 3 4.1 13 14 VV 85°C 3 4.4 13 14 25°C −3 −4.2 −12.5 −13.9 MMaxiimum negattiive peakk VVOOMM−− oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −40°C −3 −4.1 −12.5 −13.8 VV 85°C −3 −4.2 −12.5 −14 25°C 4 12 5 14.3 AAVVDD Lvvooallrttgaaegg-ees iaagmmnapplll iidffiiiccffaaettriiooennn§§tial RRLL = 1100 kkΩΩ −40°C 3 8.4 4 11.6 VV//mmVV 85°C 4 13.5 5 15.3 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCMMRRRR CCrreeojjeemccmttiiooonnn rr-aamttiiooodde VVVVIOOC === VV00,I CRRRSSm ==iin 55,00 ΩΩ −40°C 70 87 75 94 ddBB 85°C 70 87 75 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rreejjeeccttiioonn rraattiioo VOO = 0,, RSS = 50 Ω −40°C 75 96 75 96 dB (ΔVCC±/ΔVIO) 85°C 75 96 75 96 †Full range is −40°C to 85°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031I and TL031AI electrical characteristics at specified free-air temperature (continued) TL031I, TL031AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC±= ±5 V VCC±= ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 1.9 2.5 6.5 8.4 PPDD TToottaall ppoowweerr ddiissssiippaattiioonn VVOO = 00,, NNoo llooaadd −40°C 1.4 2.5 5.4 8.4 mmWW 85°C 1.9 2.5 6.2 8.4 25°C 192 250 217 280 ICCCC Supppplyy current VOO = 0,, No load −40°C 144 250 181 280 μμA 85°C 189 250 207 280 TL031I and TL031AI operating characteristics at specified free-air temperature TL031I, TL031AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at RRL = 1100 kkΩΩ, CCL = 110000 pFF −40°C 1.6 1 2.1 VV//μμss uunniittyy ggaaiinn†† SSeeee FFiigguurree 11 85°C 2.3 1.5 3.3 25°C 3.9 1.5 5.1 SSRR− NNggaaeiignna††ttiive sllew ratte att uniitty RRSSeeL ee= FF11ii00gg uukkrrΩΩee ,11 CCL = 110000 pFF −40°C 3.3 1.5 4.8 VV//μμss 85°C 4.1 1.5 4.9 VVII((PPPP)) == ±±1100 mmVV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 132 123 nnss See Figures 1 and 2 85°C 154 146 VVII((PPPP)) == ±±1100 mmVV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 132 123 nnss See Figure 1 85°C 154 146 VVII((PPPP)) == ±±1100 mmVV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 12% 5% See Figures 1 and 2 85°C 13% 7% f = 10 Hz 61 61 TTLL003311II 2255°°CC VVn Eiinqpuuittvalent RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4611 4611 nnVV//√√HHz nnooiissee vvoollttaaggee TTLL003311AAII 2255°°CC f = 1 kHz 41 41 60 EEqquuiivvaalleenntt iinnppuutt nnooiissee IIn current ff = 11 kkHHzz 2255°°CC 00.000033 00.000033 ppAA//√√HHz 25°C 1 1.1 VVII == 1100 mmVV BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −40°C 1 1.1 MMHHzz See Figure 4 85°C 0.9 1 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −40°C 60° 65° See Figure 4 85°C 60° 64° †For VCC±= ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031M and TL031AM electrical characteristics at specified free-air temperature TL031M, TL031AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.54 3.5 0.5 1.5 VO = 0, TTLL003311MM Full range† 6.5 4.5 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003311AAMM 25°C 0.41 2.8 0.34 0.8 mmVV Full range† 5.8 3.8 25°C to TTeemmppeerraattuurree ccooeeffffiicciieenntt ooff VO = 0, TL031M 125°C 5.1 4.3 (cid:2)(cid:2)VIO input offset voltage VVRISC == 5000, Ω TL031AM 215°2C5° tCo 5.1 4.3 μVV//°°CC Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 5000,, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 12255°°CC 0.12 11000 0.12 11000 pnAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 12255°°CC 27 22000 28 22000 pnAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −55°C 3 4.1 13 14 VV 125°C 3 4.4 13 14 25°C −3 −4.2 −12.5 −13.9 MMaxiimum negattiive peakk VVOOMM−− oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −55°C −3 −4 −12.5 −13.8 VV 125°C −3 −4.3 −12.5 −14 25°C 4 12 5 14.3 AAVVDD Lvvooallrttgaaegg-ees iaagmmnapplll iidffiiiccffaaettriiooennn§§tial RRLL = 1100 kkΩΩ −55°C 3 7.1 4 10.4 VV//mmVV 125°C 3 12.9 4 15 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCMMRRRR CCrreeojjeemccmttiiooonnn rr-aamttiiooodde VVVVIOOC === 00VV,I CRRRSSm ==iin 55,00 ΩΩ −55°C 70 87 70 94 ddBB 125°C 70 87 70 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kkSSVVRR rreejjeeccttiioonn rraattiioo VVOO = 00,, RRSS = 5500 ΩΩ −55°C 75 96 75 95 ddBB (ΔVCC±/ΔVIO) 125°C 75 96 75 96 25°C 1.9 2.5 6.5 8.4 PDD Total ppower dissippation VOO = 0,, No load −55°C 1.1 2.5 4.7 8.4 mW 125°C 1.8 2.5 5.8 8.4 †Full range is −55°C to 125°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031M and TL031AM electrical characteristics at specified free-air temperature (continued) TL031M, TL031AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 192 250 217 280 ICCCC Supppplyy current VOO = 0,, No load −55°C 114 250 156 280 μμA 125°C 178 250 197 280 TL031M and TL031AM operating characteristics at specified free-air temperature TL031M, TL031AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at RRL = 1100 kkΩΩ, CCL = 110000 pFF −55°C 1.4 1 1.9 VV//μμss uunniittyy ggaaiinn†† SSeeee FFiigguurree 11 125°C 2.4 1 3.5 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at RRL = 1100 kkΩΩ, CCL = 110000 pFF −55°C 3.2 1 4.6 VV//μμss uunniittyy ggaaiinn†† SSeeee FFiigguurree 11 125°C 4.1 1 4.7 VVII((PPPP)) == ±±1100 mmVV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 142 123 nnss See Figures 1 and 2 125°C 166 158 VVII((PPPP)) == ±±1100 mmVV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 142 123 nnss See Figure 1 125°C 166 158 VVII((PPPP)) == ±±1100 mmVV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 16% 6% See Figures 1 and 2 125°C 14% 8% f = 10 Hz 61 61 TTLL003311MM 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt giinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4611 4611 nnVV//√√HHz TTLL003311AAMM 2255°°CC f = 1 kHz 41 41 EEqquuiivvaalleenntt iinnppuutt nnooiissee IIn current ff = 11 kkHHzz 2255°°CC 00.000033 00.000033 ppAA//√√HHz 25°C 1 1.1 VVII == 1100 mmVV,, BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −55°C 1 1.1 MMHHzz See Figure 4 125°C 0.9 0.9 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −55°C 57° 64° See Figure 4 125°C 59° 62° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032C and TL032AC electrical characteristics at specified free-air temperature TL032C, TL032AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.69 3.5 0.57 1.5 VO = 0, TTLL003322CC Full range† 4.5 2.5 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003322AACC 25°C 0.53 2.8 0.39 0.8 mmVV Full range† 3.8 1.8 25°C to (cid:2)(cid:2) Temperature VO = 0, TL032C 70°C 11.5 10.8 VVIO cooffeseffffitic viieonlttta ogffe iinputt VVRISC == 5000, Ω TL032AC 25°7C0° tCo 11.5 10.8 25 μVV//°°CC Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 5000,, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,,ure 5 VVIICC == 00 2750°°CC 19 120000 112 120000 ppAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, ure 5 VVIICC == 00 2750°°CC 520 240000 820 240000 ppAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaaxxiimmuumm ppoossiittiivvee VVOOMM++ ppeeaakk oouuttppuutt vvoollttaaggee RRLL = 1100 kkΩΩ 0°C 3 4.2 13 14 VV swing 70°C 3 4.3 13 14 25°C −3 −4.2 −12.5 −13.9 MMaaxxiimmuumm nneeggaattiivvee VVOOMM−− ppeeaakk oouuttppuutt vvoollttaaggee RRLL = 1100 kkΩΩ 0°C −3 −4.1 −12.5 −13.9 VV swing 70°C −3 −4.2 −12.5 −14 25°C 4 12 5 14.3 LLaarrggee--ssiiggnnaall AAVVDD ddiiffffeerreennttiiaall vvoollttaaggee RRLL = 1100 kkΩΩ 0°C 3 11.1 4 13.5 VV//mmVV amplification§ 70°C 4 13.3 5 15.2 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 14 pF 25°C 70 87 75 94 CCMMRRRR CCrreeojjeemccmttiiooonnn rr-aamttiiooodde VVVVIOOC === 00VV, ICRRRSSm ==ii n55,00 ΩΩ 0°C 70 87 75 94 ddBB 70°C 70 87 75 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rr(eeΔjjVeeCccttCiioo±nn/Δ rrVaaIttOiioo) VVVVCOOC ==± 00=, ±±RR55SS VV == tt55o00 ±± ΩΩ1155 VV, 700°°CC 7755 9966 7755 9966 dB †Full range is 0°C to 70°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = 2.3 V; at VCC± = ±15 V, VO = ±10 V 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032C and TL032AC electrical characteristics at specified free-air temperature (continued) TL032C, TL032AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 3.8 5 13 17 TTottall power ddiissiipattiion PPDD ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd 0°C 3.7 5 12.7 17 mmWW 70°C 3.8 5 12.6 17 SSuuppppllyy ccuurrrreenntt 0°C 368 500 422 560 IICC (two amplifiers) VVO = 00, NNoo llooaadd 70°C 378 500 420 560 μAA VO1/VO2 Crosstalk attenuation AVD = 100 dB 25°C 120 120 dB TL032C and TL032AC operating characteristics at specified free-air temperature TL032C, TL032AC PARAMETER TEST CONDITIONS TAA VCC± = ±5 V VCC± = ±15 V UNIT MIN TYP MAX MIN TYP MAX 25°C 1.2 1.5 2.9 SSRR++ Positive slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF 0°C 1.8 1 2.6 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 70°C 2.2 1.5 3.2 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF 0°C 3.7 1.5 5 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 70°C 4 1.5 5 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 134 127 nnss See Figures 1 and 2 70°C 150 142 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 134 127 nnss See Figures 1 and 2 70°C 150 142 VVII((PPPP)) == ±±1100 VV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 10% 4% See Figures 1 and 2 70°C 12% 6% f = 10 Hz 49 49 TTLL003322CC 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt ggiinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4419 4419 nnVV//√√HHzz TTLL003322AACC 2255°°CC f = 1 kHz 41 41 60 In Equivalent input noise current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV,, BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF 0°C 1 1.1 MMHHzz See Figure 4 70°C 1 1 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF 0°C 61° 65° See Figure 4 70°C 60° 64° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032I and TL032AI electrical characteristics at specified free-air temperature TL032I, TL032AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.69 3.5 0.57 1.5 VO = 0, TTLL003322II Full range† 5.3 3.3 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003322AAII 25°C 0.53 2.8 0.39 0.8 mmVV Full range† 4.6 2.6 25°C to (cid:2)(cid:2) Temperature VO = 0, TL032I 85°C 11.4 10.8 VVIO cooffeseffffitic viieonlttta ogffe iinputt VVRISC == 5000, Ω TL032AI 25°8C5° tCo 11.4 10.8 25 μVV//°°CC Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 5000,, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,,ure 5 VVIICC == 00 2855°°CC 0.012 01.0405 0.012 01.0405 pnAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,,ure 5 VVIICC == 00 2855°°CC 0.22 200.90 0.23 200.90 pnAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaaxxiimmuumm ppoossiittiivvee VVOOMM++ ppeeaakk oouuttppuutt vvoollttaaggee RRLL = 1100 kkΩΩ −40°C 3 4.2 13 14 VV swing 85°C 3 4.4 13 14 25°C −3 −4.2 −12.5 −13.9 MMaaxxiimmuumm nneeggaattiivvee VVOOMM−− ppeeaakk oouuttppuutt vvoollttaaggee RRLL = 1100 kkΩΩ −40°C −3 −4.1 −12.5 −13.8 VV swing 85°C −3 −4.2 −12.5 −14 −40°C 3 8.4 4 11.6 AAVD LLvoaalrrtggaeeg--ess iiaggmnnaaplll iddfiiicffffaeetrrioeennn§ttiiaall RRL = 1100 kkΩΩ 85°C 4 13.5 5 15.3 VV//mmVV ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCMMRRRR CCrreeojjeemccmttiiooonnn rr-aamttiiooodde VVVVIOOC === 00VV, ICRRRSSm ==ii n55,00 ΩΩ −40°C 70 87 75 94 ddBB 85°C 70 87 75 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rr(eeΔjjVeeCccttCiioo±nn/Δ rrVaaIttOiioo) VVVVCOOC ==± 00=, ±±RR55SS VV == tt55o00 ±± ΩΩ1155 VV, −8450°°CC 7755 9966 7755 9966 dB †Full range is −40°C to 85°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = 2.3 V; at VCC± = ±15 V, VO = ±10 V 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032I and TL032AI electrical characteristics at specified free-air temperature (continued) TL032I, TL032AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 3.8 5 13 17 TToottaall ppoowweerr PPDD ddiissssiippaattiioonn VVOO = 00,, NNoo llooaadd −40°C 2.9 5 10.9 17 mmWW (two amplifiers) 85°C 3.7 5 12.4 17 25°C 384 500 434 560 SSupplly currentt IICCCC ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −40°C 288 500 362 560 μμAA 85°C 372 500 414 560 Crosstalk VO1/VO2 attenuation AVD = 100 dB 25°C 120 120 dB TL032I and TL032AI operating characteristics at specified free-air temperature TL032I, TL032AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Pggaaoiisnni††tive slew rate at unity RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 1.6 1 2.1 VV//μμss 85°C 2.3 1.5 3.3 25°C 3.9 1.5 5.1 SSRR− Nggaaeiignna††tive slew rate at unity RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 3.3 1.5 4.8 VV//μμss 85°C 4.1 1.5 4.9 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 132 123 nnss See Figures 1 and 2 85°C 154 146 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 132 123 nnss See Figure 1 85°C 154 146 VVII((PPPP)) == ±±1100 VV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 12% 5% See Figures 1 and 2 85°C 13% 7% f = 10 Hz 49 49 TTLL003322II 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt ggiinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4419 4419 nnVV//√√HHzz TTLL003322AAII 2255°°CC f = 1 kHz 41 41 60 Equivalent input noise In current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV,, BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −40°C 1 1.1 MMHHzz See Figure 4 85°C 0.9 1 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −40°C 61° 65° See Figure 4 85°C 60° 64° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC±= ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032M and TL032AM electrical characteristics at specified free-air temperature TL032M, TL032AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.69 3.5 0.57 1.5 VO = 0, TTLL003322MM Full range† 6.5 4.5 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003322AAMM 25°C 0.53 2.8 0.39 0.8 mmVV Full range† 5.8 3.8 25°C to TTeemmppeerraattuurree ccooeeffffiicciieenntt VO = 0, TL032M 125°C 9.7 9.7 (cid:2)(cid:2)VIO of input offset voltage VVRISC == 5000, Ω TL032AM 215°2C5° tCo 9.7 9.7 μVV//°°CC Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 5000,, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,,ure 5 VVIICC == 00 1 2255°°CC 0.12 11000 0.12 11000 pnAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,,ure 5 VVIICC == 00 1 2255°°CC 27 22000 28 22000 pnAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −55°C 3 4.1 13 14 VV 125°C 3 4.4 13 14 25°C −3 −4.2 −12.5 −13.9 MMaxiimum negattiive peakk VVOOMM−− oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −55°C −3 −4 −12.5 −13.8 VV 125°C −3 −4.3 −12.5 −14 25°C 4 12 5 14.3 AAVVDD Lvvooallrttgaaegg-ees iaagmmnapplll iidffiiiccffaaettriiooennn§§tial RRLL = 1100 kkΩΩ −55°C 3 7.1 4 10.4 VV//mmVV 125°C 3 12.9 4 15 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCMMRRRR CCrraaottiimoomon-modde rejjecttiion VVVVIOOC === 00VV, ICRRRSSm ==ii n55,00 ΩΩ −55°C 70 87 70 94 ddBB 125°C 70 87 70 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rr(eeΔjjVeeCccttCiioo±nn/Δ rrVaaIttOiioo) VVVVCOOC ==± 00=, ±±RR55SS VV == tt55o00 ±± ΩΩ1155 VV, −12555°°CC 7755 9956 7755 9956 dB †Full range is −55°C to 125°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = 2.3 V; at VCC± = ±15 V, VO = ±10 V 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032M and TL032AM electrical characteristics at specified free-air temperature (continued) TL032M, TL032AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 3.8 5 13 17 TToottaall ppoowweerr ddiissssiippaattiioonn PPDD ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −55°C 2.3 5 9.4 17 mmWW VO = 0, 125°C 3.6 5 11.8 17 25°C 384 500 434 560 SSupplly currentt IICCCC ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −55°C 228 500 312 560 μμAA 125°C 356 500 394 560 VO1/VO2 Crosstalk attenuation AVD = 100 dB 25°C 120 120 dB TL032M and TL032AM operating characteristics at specified free-air temperature TL032M, TL032AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF −55°C 1.4 1 1.9 VV//μμss ggaaiinn†† SSeeee aanndd FFiigguurree 11 125°C 2.4 1 3.5 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF −55°C 3.2 1 4.6 VV//μμss ggaaiinn†† SSeeee aanndd FFiigguurree 11 125°C 4.1 1 4.7 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 142 123 nnss See Figures 1 and 2 125°C 166 58 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 142 123 nnss See Figure 1 125°C 166 158 VVII((PPPP)) == ±±1100 VV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 16% 6% See Figures 1 and 2 125°C 14% 8% f = 10 Hz 49 49 VVn Eiinnqppuuuittv nnaooleiissneet TTLL003322MM RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 2255°°CC 4419 4419 nnVV//√√HHzz vvoollttaaggee TTLL003322AAMM 2255°°CC f = 1 kHz 41 41 Equivalent input noise In current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV,, BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −55°C 1 1.1 MMHHzz See Figure 4 125°C 0.9 0.9 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −55°C 57° 64° See Figure 4 125°C 59° 62° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC±= ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034C and TL034AC electrical characteristics at specified free-air temperature TL034C, TL034AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.91 6 0.79 4 VO = 0, TTLL003344CC Full range† 8.2 6.2 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003344AACC 25°C 0.7 3.5 0.58 1.5 mmVV Full range† 5.7 3.7 25°C to (cid:2)(cid:2)VIO TToeef mminpppueetrr aaottfuufsrreee tcc voooeelfftffaiiccgiieeenntt VVVROISC === 50000,, Ω TTLL003344CAC 257°7C00°° tCCo 1111..66 1122 25 μVV//°°CC Input offset voltage VO = 0, long-term drift‡ VRISC == 500, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2750°°CC 19 120000 112 120000 ppAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, u rVVeII CC5 == 00 2750°°CC 520 240000 820 240000 ppAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ 0°C 3 4.2 13 14 VV 70°C 3 4.3 13 14 25°C −3 −4.2 −12.5 −13.9 MMaxiimum negattiive peakk VVOOMM−− oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ 0°C −3 −4.1 −12.5 −13.9 VV 70°C −3 −4.2 −12.5 −14 25°C 4 12 5 14.3 AAVVDD Lvvooallrttgaaegg-ees iaagmmnapplll iidffiiiccffaaettriiooennn§§tial RRLL = 1100 kkΩΩ 0°C 3 11.1 4 13.5 VV//mmVV 70°C 4 13.3 5 15.2 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 14 pF 25°C 70 87 75 94 CCommon-modde VVIICC == VVIICCRRmmiinn,, CCMMRRRR rreejjeeccttiioonn rraattiioo VVOO = 00,, 0°C 70 87 75 94 ddBB RS = 50 Ω 70°C 70 87 75 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rreejjeeccttiioonn rraattiioo VOO = 0,, RSS = 50 Ω 0°C 75 96 75 96 dB (ΔVCC±/ΔVIO) 70°C 75 96 75 96 †Full range is 0°C to 70°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034C and TL034AC electrical characteristics at specified free-air temperature (continued) TL034C, TL034AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 7.7 10 26 34 TTottall power ddiissiipattiion PPDD ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd 0°C 7.4 10 25.3 34 mmWW 70°C 7.6 10 25.2 34 25°C 0.77 1 0.87 1.12 SSupplly currentt ((ffour IICCCC aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd 0°C 0.74 1 0.85 1.12 mmAA 70°C 0.76 1 0.84 1.12 VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 dB TL034C and TL034AC operating characteristics at specified free-air temperature TL034C, TL034AC PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF 0°C 1.8 1 2.6 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 70°C 2.2 1.5 3.2 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF 0°C 3.7 1.5 5 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 70°C 4 1.5 5 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 134 127 nnss See Figures 1 and 2 70°C 150 142 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 134 127 nnss See Figure 1 70°C 150 142 VVII((PPPP)) == ±±1100 VV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF 0°C 10% 4% See Figures 1 and 2 70°C 12% 6% f = 10 Hz 83 83 TTLL003344CC 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt ggiinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4833 4833 nnVV//√√HHzz TTLL003344AACC 2255°°CC f = 1 kHz 43 43 60 In Equivalent input noise current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF 0°C 1 1.1 MMHHzz See Figure 4 70°C 1 1 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF 0°C 61° 65° See Figure 4 70°C 60° 64° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 19

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034I and TL034AI electrical characteristics at specified free-air temperature TL034I, TL034AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.91 3.6 0.79 4 VO = 0, TTLL003344II Full range† 9.3 7.3 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003344AAII 25°C 0.7 3.5 0.58 1.5 mmVV Full range† 6.8 4.8 25°C to VO = 0, VIC TL034I 85°C 11.5 11.6 (cid:2)(cid:2) TTeemmppeerraattuurree ccooeeffffiicciieenntt = 00, μVV//°°CC VIO of input offset voltage RS = 50 Ω TL034AI 25°8C5° tCo 11.5 11.6 25 Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 5000,, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2855°°CC 0.012 01.0405 0.012 01.0405 pnAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 2855°°CC 0.22 200.90 0.23 200.90 pnAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −40°C 3 4.1 13 14 VV 85°C 3 4.4 13 14 25°C −3 −4.2 −12.5 −13.9 MMaaxxiimmuumm nneeggaattiivvee VVOOMM−− ppeeaakk RRLL = 1100 kkΩΩ −40°C −3 −4.1 −12.5 −13.8 VV output voltage swing 85°C −3 −4.2 −12.5 −14 −40°C 4 12 5 14.3 AAVD LLvoaalrrtggaeeg--ess iiaggmnnaaplll iddfiiicffffaeetrrioeennn§ttiiaall RRL = 1100 kkΩΩ 85°C 3 8.4 4 11.6 VV//mmVV ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCommon-modde VVIICC == VVIICCRRmmiinn,, CCMMRRRR rreejjeeccttiioonn rraattiioo VVOO = 00,, −40°C 70 87 75 94 ddBB RS = 50 Ω 85°C 70 87 75 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rreejjeeccttiioonn rraattiioo VOO = 0,, RSS = 50 Ω −40°C 75 96 75 96 dB (ΔVCC±/ ΔVIO) 85°C 75 96 75 96 †Full range is −40°C to 85°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V 20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034I and TL034AI electrical characteristics at specified free-air temperature (continued) TL034I, TL034AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 7.7 10 26 34 TTottall power ddiissiipattiion PPDD ((ffoouurr aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −40°C 5.8 10 21.7 34 mmWW 85°C 7.4 10 24.8 34 25°C 0.77 1 0.87 1.12 SSupplly currentt IICCCC ((ffoouurr aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −40°C 0.58 1 0.72 1.12 mmAA 85°C 0.74 1 0.83 1.12 VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 dB TL034I and TL034AI operating characteristics TL034I, TL034AI PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF −40°C 1.6 1 2.1 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 85°C 2.3 1.5 3.3 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF −40°C 3.3 1.5 4.8 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 85°C 4.1 1.5 4.9 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 132 123 nnss See Figures 1 and 2 85°C 154 146 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 132 123 nnss See Figures 1 and 2 85°C 154 146 VVII((PPPP)) == ±±1100 VV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −40°C 12% 5% See Figures 1 and 2 85°C 13% 7% f = 10 Hz 83 83 TTLL003344II 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt ggiinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4833 4833 nnVV//√√HHzz TTLL003344AAII 2255°°CC f = 1 kHz 43 43 60 Equivalent input noise In current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV,, BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −40°C 1 1.1 MMHHzz See Figure 4 85°C 0.9 1 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −40°C 61° 65° See Figure 4 85°C 60° 64° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC±= ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 21

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034M and TL034AM electrical characteristics at specified free-air temperature TL034M, TL034AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 0.91 3.6 0.78 4 VO = 0, TTLL003344MM Full range† 11 9 VVIO IInnppuutt ooffffsseett vvoollttaaggee VVRRISSC === 550000, ΩΩ TTLL003344AAMM 25°C 0.7 3.5 0.58 1.5 mmVV Full range† 8.5 6.5 25°C to TTeemmppeerraattuurree ccooeeffffiicciieenntt ooff VO = 0, TL034M 125°C 10.6 10.9 (cid:2)(cid:2)VIO input offset voltage VVRISC == 5000, Ω TL034AM 215°2C5° tCo 10.6 10.9 μVV//°°CC Ilonnpgu-tt eorffmse dt rvifot‡ltage VVROISC === 5000,, Ω 25°C 0.04 0.04 μV/mo IIIO IInnppuutt ooffffsseett ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 1 2255°°CC 0.12 11000 0.12 11000 pnAA IIIB IInnppuutt bbiiaass ccuurrrreenntt VVSeOOe == F 00ig,, uVVrIIeCC 5== 00 1 2255°°CC 27 22000 28 22000 pnAA −1.5 −3.4 −11.5 −13.4 25°C CCoommmmoonn-mmooddee iinnppuutt to 4 to 5.4 to 14 to 15.4 VVICR voltage range −1.5 −11.5 VV Full range† to 4 to 14 25°C 3 4.3 13 14 MMaxiimum posiittiive peakk VVOOMM++ oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −55°C 3 4.1 13 14 VV 125°C 3 4.4 13 14 25°C −3 −4.2 −12.5 −13.9 MMaxiimum negattiive peakk VVOOMM−− oouuttppuutt vvoollttaaggee sswwiinngg RRLL = 1100 kkΩΩ −55°C −3 −4 −12.5 −13.8 VV 125°C −3 −4.3 −12.5 −14 25°C 4 12 5 14.3 AAVVDD Lvvooallrttgaaegg-ees iaagmmnapplll iidffiiiccffaaettriiooennn§§tial RRLL = 1100 kkΩΩ −55°C 3 7.1 4 10.4 VV//mmVV 125°C 3 12.9 4 15 ri Input resistance 25°C 1012 1012 Ω ci Input capacitance 25°C 5 4 pF 25°C 70 87 75 94 CCMMRRRR CCrreeojjeemccmttiiooonnn rr-aamttiiooodde VVVVIOOC === 00VV, ICRRRSSm ==ii n55,00 ΩΩ −55°C 70 87 70 94 ddBB 125°C 70 87 70 94 25°C 75 96 75 96 SSuuppppllyy--vvoollttaaggee kSSVVRR rreejjeeccttiioonn rraattiioo VOO = 0,, RSS = 50 Ω −55°C 75 95 75 95 dB (ΔVCC±/ΔVIO) 125°C 75 96 75 96 †Full range is −55°C to 125°C. ‡Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. §At VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V 22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034M and TL034AM electrical characteristics at specified free-air temperature (continued) TL034M, TL034AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 7.7 10 26 34 TTottall power ddiissiipattiion PPDD ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −55°C 4.6 12 18.7 45 mmWW 125°C 7.1 12 23.6 45 25°C 0.77 1 0.87 1.12 SSupplly currentt IICCCC ((ttwwoo aammpplliiffiieerrss)) VVOO = 00,, NNoo llooaadd −55°C 0.46 1.2 0.62 1.5 mmAA 125°C 0.71 1.2 0.79 1.5 VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 dB TL034M and TL034AM operating characteristics at specified free-air temperature TL034M, TL034AM PPAARRAAMMEETTEERR TTEESSTT CCOONNDDIITTIIOONNSS TTAA VCC± = ±5 V VCC± = ±15 V UUNNIITT MIN TYP MAX MIN TYP MAX 25°C 2 1.5 2.9 SSRR++ Positive slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF −55°C 1.4 1 1.9 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 125°C 2.4 1 3.5 25°C 3.9 1.5 5.1 SSRR− Negative slew rate at unity RRL = 1100 kkΩΩ, CCL = 110000 pFF −55°C 3.2 1 4.6 VV//μμss ggaaiinn†† SSeeee FFiigguurree 11 125°C 4.1 1 4.7 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttrr RRiissee ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 142 123 nnss See Figures 1 and 2 125°C 166 58 VVII((PPPP)) == ±±1100 VV,, 25°C 138 132 ttff FFaallll ttiimmee RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 142 123 nnss See Figure 1 125°C 166 158 VVII((PPPP)) == ±±1100 VV,, 25°C 11% 5% OOvveerrsshhoooott ffaaccttoorr RRLL = 1100 kkΩΩ,, CCLL = 110000 ppFF −55°C 16% 6% See Figures 1 and 2 125°C 14% 8% f = 10 Hz 83 83 TTLL003344MM 2255°°CC VVn EEnoqqiuusiievv aavlloeelnntatt giinneppuutt RRSeSSe == F 22ig00u ΩΩre 3 ff == 110 k HHzz 4833 4833 nnVV//√√HHzz TTLL003344AAMM 2255°°CC f = 1 kHz 43 43 Equivalent input noise In current f = 1 kHz 25°C 0.003 0.003 pA/√Hz 25°C 1 1.1 VVII == 1100 mmVV,, BB11 UUnniittyy-ggaaiinn bbaannddwwiiddtthh RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −55°C 1 1.1 MMHHzz See Figure 4 125°C 0.9 0.9 25°C 61° 65° VVII == 1100 mmVV,, φφmm Phase marggin at unityy ggain RRLL = 1100 kkΩΩ,, CCLL = 2255 ppFF −55°C 57° 64° See Figure 4 125°C 59° 62° †For VCC± = ±5 V, VI(PP) = ±1 V; for VCC±= ±15 V, VI(PP) = ±5 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 23

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 PARAMETER MEASUREMENT INFORMATION VCC+ − Overshoot VO VI + 90% VCC− (see Note CAL) RL 10% NOTE A: CL includes fixture capacitance. tr Figure 1. Slew-Rate and Overshoot Test Circuit Figure 2. Rise Time and Overshoot Waveform 10 kΩ 10 kΩ VCC+ VI − VCC+ 100 Ω + VO − VCC− VO CL RL (see Note A) VCC− RS RS NOTE A: CL includes fixture capacitance. Figure 3. Noise-Voltage Test Circuit Figure 4. Unity-Gain Bandwidth and Phase-Margin Test Circuit Ground Shield VCC+ − + VCC− Picoammeters Figure 5. Input-Bias and Offset-Current Test Circuit 24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 PARAMETER MEASUREMENT INFORMATION typical values Typical values presented in this data sheet represent the median (50% point) of device parametric performance. input bias and offset current At the picoampere bias current level typical of the TL03x and TL03xA, accurate measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter, but test-socket leakages easily can exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with no device in the socket. The device is then inserted into the socket and a second test that measures both the socket leakage and the device input bias current is performed. The two measurements are then subtracted algebraically to determine the bias current of the device. noise With the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage density is performed at f = 1 kHz, unless otherwise noted. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 25

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS Table of Graphs FIGURE Distribution of TL03x input offset voltage 6−11 Distribution of TL03x input offset-voltage temperature coefficient 12−14 Input bias current vs Common-mode input voltage 15 Input bias current and input offset current vs Free-air temperature 16 Common-mode input voltage vs Supply voltage 17 Common-mode input voltage vs Free-air temperature 18 Output voltage vs Differential input voltage 19, 20 Maximum peak output voltage vs Supply voltage 21 Maximum peak-to-peak output voltage vs Frequency 22 Maximum peak output voltage vs Output current 23, 24 Maximum peak output voltage vs Free-air temperature 25, 26 Large-signal differential voltage amplification vs Load resistance 27 Large-signal differential voltage amplification and Phase shift vs Frequency 28 Large-signal differential voltage amplification vs Free-air temperature 29 Output impedance vs Frequency 30 Common-mode rejection ratio vs Frequency 31, 32 Common-mode rejection ratio vs Free-air temperature 33 Supply-voltage rejection ratio vs Free-air temperature 34 Short-circuit output current vs Supply voltage 35 Short-circuit output current vs Time 36 Short-circuit output current vs Free-air temperature 37 Equivalent input noise voltage vs Frequency (TL031 and TL031A) 38 Equivalent input noise voltage vs Frequency (TL032 and TL032A) 39 Equivalent input noise voltage vs Frequency (TL034 and TL034A) 40 Supply current vs Supply voltage (TL031 and TL031A) 41 Supply current vs Supply voltage (TL032 and TL032A) 42 Supply current vs Supply voltage (TL034 and TL034A) 43 Supply current vs Free-air temperature (TL031 and TL031A) 44 Supply current vs Free-air temperature (TL032 and TL032A) 45 Supply current vs Free-air temperature (TL034 and TL034A) 46 Slew rate vs Load resistance 47, 48 Slew rate vs Free-air temperature 49, 50 Overshoot factor vs Load capacitance 51 Total harmonic distortion vs Frequency 52 Unity-gain bandwidth vs Supply voltage 53 Unity-gain bandwidth vs Free-air temperature 54 Phase margin vs Supply voltage 55 Phase margin vs Load capacitance 56 Phase margin vs Free-air temperature 57 Voltage-follower small-signal pulse response 58 Voltage-follower large-signal pulse response 59, 60 26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS DISTRIBUTION OF TL031 INPUT OFFSET VOLTAGE DISTRIBUTION OF TL031A ÎÎÎÎÎÎÎÎÎÎ INPUT OFFSET VOLTAGE 14 ÎÎ16ÎÎ81 UÎÎnitsÎÎ TesÎÎted FÎromÎ 1 WÎafeÎr LoÎt 16 12 ÎÎÎVTPA CPÎÎÎ C=a± c2 =k5ÎÎÎ a°±Cg1e5ÎÎÎ V Î 14 Î1VT4AC3Î C=3± 2U=5În ±°iCt1s5Î TVesÎted From 1 Wafer Lot P Package Units − % 180 nits − % 1102 ÎÎÎÎÎ ge of e of U 8 a 6 g ent nta 6 c e Per 4 erc P 4 2 2 0 0 −1.2 −0.6 0 0.6 1.2 −900 −600 −300 0 300 600 900 VIO − Input Offset Voltage − mV VIO − Input Offset Voltage − μV Figure 6 Figure 7 DISTRIBUTION OF TL032A DISTRIBUTION OF TL032 INPUT OFFSET VOLTAGE INPUT OFFSET VOLTAGE ÎÎÎÎÎÎÎÎÎÎÎ 12 15 ÎÎ16ÎÎ81 AÎÎmplÎÎifierÎÎs TeÎstedÎ FroÎm 1 ÎWafÎer LÎot 1321 Amplifiers Tested From 1 Wafer Lot VCC± = ±15 V VCC± = ±15 V ÎÎTAÎÎ = 25ÎΰCÎÎÎ TA = 25°C on − % 9 ÎÎP PÎÎackÎÎageÎÎ s − % 12 P Package plificati mplifier 9 m A of A 6 e of age ntag 6 cent 3 erce Per P 3 0 0 −1.2 −0.6 0 0.6 1.2 −900 −600 −300 0 300 600 900 VIO − Input Offset Voltage − mV VIO − Input Offset Voltage − μV Figure 8 Figure 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 27

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS DISTRIBUTION OF TL034 DISTRIBUTION OF TL034A INPUT OFFSET VOLTAGE INPUT OFFSET VOLTAGE ÎÎÎÎÎÎÎÎÎÎÎÎ 12 15 ÎÎ16ÎÎ81 AÎÎmplÎÎifierÎÎs TeÎstedÎ FroÎm 1 ÎWafÎer LoÎt Î ÎÎ1ÎÎ716ÎÎ AmÎÎplifiÎÎers TÎÎesteÎd FÎromÎ 3 WÎaferÎ LotsÎ VCC± = ±15 V VCC± = ±15 V ÎTA Î= 25ΰC ÎÎ ÎÎTA =Î 25°ÎC ÎÎ s − % 9 ÎD PÎackÎageÎ − % 1Î2 ÎN PaÎckaÎge Î mplifier plifiers 9 A m e of 6 of A g e a g 6 nt a e nt c e Per 3 erc P 3 0 0 −1.2 −0.6 0 0.6 1.2 −1.8 −1.2 0.6 0 0.6 1.2 1.8 VIO − Input Offset Voltage − mV VIO − Input Offset Voltage − mV Figure 10 Figure 11 DISTRIBUTION OF TL031 DISTRIBUTION OF TL032 INPUT OFFSET-VOLTAGE INPUT OFFSET-VOLTAGE TEMPERATURE COEFFICIENT TEMPERATURE COEFFICIENT 24 ÎÎÎÎÎÎÎÎÎÎÎÎÎ 76 Units TesteVPTdA C PF C=ar± oc2 =km5 a±° Cg11e 5 Wt oVa 1fe2r5 °LCot 32ÎÎÎ05 ÎÎÎV1TA6C0 C= ÎÎαA 2 =m5 °±pÎÎÎC1li 5fti oeVÎÎÎ r1s2 T5ÎÎÎe°CsteÎÎÎd FrÎom 2Î WaÎfer LÎotsÎÎ % P Package 18 % − − s s er 20 Unit plifi ge of 12 of Am 15 a e nt g e a c nt 10 er e P c 6 er P 5 0 0 −30 −20 −10 0 10 20 30 −40 −30 −20 −10 0 10 20 30 40 (cid:2)VIO − Input Offset-Voltage Temperature Coefficient − μV/°C (cid:2)VIO − Temperature Coefficient − μV/°C Figure 12 Figure 13 28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS DISTRIBUTION OF TL034 INPUT BIAS CURRENT INPUT OFFSET-VOLTAGE vs TEMPERATURE COEFFICIENT COMMON-MODE INPUT VOLTAGE ÎÎÎÎÎÎÎÎÎÎÎÎ 30 10 160 Amplifiers Tested From 2 Wafer Lots % 25 ÎÎVTAC ÎÎC=± 2 =5 Îΰ±C1 5t ÎÎoV 12ÎÎ5°CÎÎÎÎÎÎÎÎ TVAC C=± 2 =5 °±C15 V − D Package A mplifiers 20 rrent − n 5 u A C of 15 s 0 ge Bia ercenta 10 − Input P B B −5 IIII 5 0 −10 −40 −30 −20 −10 0 10 20 30 40 −15 −10 −5 0 5 10 15 (cid:2) VIO − Temperature Coefficient − μV/°C VIC − Common-Mode Input Voltage − V Figure 14 Figure 15 INPUT BIAS CURRENT AND COMMON-MODE INPUT VOLTAGE INPUT OFFSET CURRENT† vs vs SUPPLY VOLTAGE A FREE-AIR TEMPERATURE n 16 Offset Current − 110ÁÁÁÁÁÁVVVCOICC ==ÁÁÁ± 0=0 ±ÁÁÁ15 VÁÁÁ Voltage − V 182 TA = 25°CÎÎPÎÎositÎÎive LÎÎimiÎÎt put ÎÎIIBÎ put 4 n ÎÎÎ n d I e I n 0.1 d 0 a o s M Bia ÎÎ on- −4 ÎÎÎÎÎ put ÎIIOÎ mm ÎNeÎgatiÎve LÎimitÎ nd IIO − InIIO 0.01 ÁÁÁÁÁÁVIC − CoVIC −−128 a B B 0.001 IIII 25 45 65 85 105 125 −160 2 4 6 8 10 12 14 16 TA − Free-Air Temperature − °C |VCC±| − Supply Voltage − V Figure 16 Figure 17 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 29

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS COMMON-MODE INPUT VOLTAGE† OUTPUT VOLTAGE vs vs FREE-AIR TEMPERATURE DIFFERENTIAL INPUT VOLTAGE 20 1.5 ÎÎÎÎÎ VCC± = ±15 V ÎÎÎRLÎÎ = 1ÎÎ kΩÎÎ − V 15 ÎPÎositÎive ÎLimiÎt 1 ÎÎÎRRLLÎÎ == 25ÎÎ kkΩΩÎÎ ge ÎÎÎÎRL =ÎÎ 10ÎÎ kΩÎÎ ut Volta 150 ge − V 0.5 ÎÎRL Î= 20Î kΩÎ p a e In Volt on-Mod −05 Output 0 ÎÎÎÎVTAC C=± 2 =5 °±C5 V Comm −10 V− O −0.5 ÎÎÎRRLLÎÎÎ == 2100ÎÎÎ kkΩΩÎÎÎ ÁÁ− Á ÎÎRLÎÎ = 5 ÎÎkΩ Î ÁÁVIC VICÁ−15 ÎÎÎÎÎ −1 ÎÎRLÎÎ = 2 ÎÎkΩ Negative Limit RL = 1 kΩ ÎÎÎÎÎ −1.5 −20 −75 −50 −25 0 25 50 75 100 125 −5 −4 −3 −2 −1 0 1 2 3 4 5 TA − Free-Air Temperature −°C VID − Differential Input Voltage − V Figure 18 Figure 19 OUTPUT VOLTAGE MAXIMUM PEAK OUTPUT VOLTAGE vs vs DIFFERENTIAL INPUT VOLTAGE SUPPLY VOLTAGE 1.5 VCC± = ±15 V RL = 5 kΩ 16 TA = 25°C RL = 10 kΩ V RL = 10 kΩ 1 RRLL == 2500 kkΩΩ ge − 12 TA = 25°C VOM+ a V olt 8 e − 0.5 ut V g p 4 olta Out put V 0 Peak 0 ut m ÎÎÎ O V− O −0.5 ÈÈÈÈ Maximu −−84 ÎVOÎM−Î −1 ÈÈÈRRLLÈÈÈ == 2500ÈÈÈ kkΩΩÈÈÈ ÁOM − OMÁ−12 ÈÈRLÈÈ = 10ÈÈ kΩÈÈ ÁVVÁ −1.5 ÈRLÈ = 5 ÈkΩ È −16 −15 −10 −5 0 5 10 15 0 2 4 6 8 10 12 14 16 VID − Differential Input Voltage − V |VCC±| − Supply Voltage − V Figure 20 Figure 21 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE† MAXIMUM PEAK OUTPUT VOLTAGE vs vs FREQUENCY OUTPUT CURRENT V 30 5 Voltage − 25 VCC± = ±15 V ÎÎÎÎRL =ÎÎ 10 kÎÎΩ ÎÎ age − V 4 VOM+ VTAC C=± 2=5 ±°C5 V ut olt p V eak Out 20 Output 3 VOM− eak-to-P 15 TA = −55°C m Peak 2 P u mum 10 TA = 125°C Maxim axi VCC± = ±5 V − 1 Á− MÁ 5 |OM PP P) |V ÁOÁP ÁVVÁO( 01 k 10 k 100 k 1 M 00 5 10 15 20 f − Frequency − Hz |IO| − Output Current − mA Figure 22 Figure 23 MAXIMUM PEAK OUTPUT VOLTAGE† MAXIMUM PEAK OUTPUT VOLTAGE vs vs FREE-AIR TEMPERATURE OUTPUT CURRENT 16 5 m Peak Output Voltage − V 1110248 ÎÎÎÎVOMÎÎ+ ÎÎÎÎVOMÎÎ−VTACÎÎ C=± 2=5 ±°C15 V m Peak Output Voltage − V −012341 ÎÎÎÎVRCL C=±ÎÎÎ 1=0 ± VkÎÎÎ5OΩ VM+ÎÎÎÎ mu 6 mu Maxi 4 Maxi −2 ÎÎÎ − − −3 |M ÁÁM MÁ ÎVOÎM−Î VO 2 ÁÁVOVOÁ−4 | 0 −5 −75 −50 −25 0 25 50 75 100 125 0 5 10 15 20 25 30 |IO| − Output Current − mA TA − Free-Air Temperature − °C Figure 24 Figure 25 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 31

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS MAXIMUM PEAK OUTPUT VOLTAGE† LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs vs FREE-AIR TEMPERATURE LOAD RESISTANCE 16 40 − V 12 VOM+ 35 TVAO == 2±51° CV e g utput Volta 48 Differential on − V/mV 2350 VCC± = ±15 V ÁMaximum Peak OÁ−−084 ÎÎVRCLÎÎ C=± 1=ÎÎÎ0 ± k1Ω5ÎÎÎ V ÎÎÎ − Large-Signal Doltage Amplificati 112050 VCC± = ±5 V − VV ÁOM OMÁ−12 ÎVOÎM− Î A VV 5 ÁÁ −16 −75 −50 −25 0 25 50 75 100 125 0 10 k 100 k 1 M TA − Free-Air Temperature −°C RL − Load Resistance − Ω Figure 26 Figure 27 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 100 k 0° VCC± = ±15 V RL = 10 kΩ 10 k CL = 25 pF 30° ntial TA = 25°C gnal Differe mplification 110 k0 ÎÎÎÎÎÎAVÎÎD ÎÎ 6900°° e Shift e-Si e A ÎPÎhaseÎ ShÎift has g g P r a La olt 10 120° − V D V A 1 150° 0.1 180° 10 100 1 k 10 k 100 k 1 M 10 M f − Frequency − Hz Figure 28 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. 32 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION† OUTPUT IMPEDANCE vs vs FREE-AIR TEMPERATURE FREQUENCY 50 200 ÎÎÎÎ RL = 10 kΩ ÎÎÎÎ AVD = 100 al V ÁÁ erenti − V/m VCC± = ±15 V Ωce − 18000 e-Signal Diff mplification 10 VCC± = ±5 V put Impeden 4600 AVD = 10 − LargAVDVoltage A ÁÁÁÁzo − Outzo 20 AVD = 1 VCC± = ±15 V ÎÎro (oÎpenÎ looÎp) ≈ 250 Ω TA = 25°C 1 10 −75 −50 −25 0 25 50 75 100 125 1 k 10 k 100 k TA − Free-Air Temperature − °C f − Frequency − Hz Figure 29 Figure 30 COMMON-MODE REJECTION RATIO COMMON-MODE REJECTION RATIO vs vs FREQUENCY FREQUENCY 100 100 B ÎVCÎC± =Î ±5 VÎ B ÎVÎCC± Î= ±1Î5 V − d 90 TA = 25°C − d 90 TA = 25°C o ÎÎÎÎ o ÎÎÎÎ ati 80 ati 80 R R on 70 on 70 cti cti eje 60 eje 60 R R de 50 de 50 o o M M n- 40 n- 40 o o m m m 30 m 30 o o C C − 20 − 20 R R R R M 10 M 10 C C 0 0 10 100 1 k 10 k 100 k 1 M 10 M 10 100 1 k 10 k 100 k 1 M 10 M f − Frequency − Hz f − Frequency − Hz Figure 31 Figure 32 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 33

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS COMMON-MODE REJECTION RATIO† SUPPLY-VOLTAGE REJECTION RATIO† vs vs FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE 95 100 − dB VCC± = ±15 V − dB VCC± = ±5 V to ±15 V o o Rati 90 Rati 98 n n o o Rejecti VCC± = ±5 V Rejecti 96 de 85 ge o a n-M Volt 94 mo y m pl p Co 80 Su − − 92 R R R ÎÎÎÎÎ V M VIC = VICRmin S C ÎÎÎÎÎ k 75 90 −75 −50 −25 0 25 50 75 100 125 −75 −50 −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C Figure 33 Figure 34 SHORT-CIRCUIT OUTPUT CURRENT SHORT-CIRCUIT OUTPUT CURRENT vs vs SUPPLY VOLTAGE TIME 30 30 VO = 0 mA TA = 25°C mA VID = 100 mV 20 − − 20 ent VID = 100 mV ent r r r r u 10 u C C ut ut 10 p p ut ut O 0 O rcuit VID = −100 mV rcuit 0 Ci Ci rt- −10 rt- ho ho VID = −100 mV S S Á− Á Á− Á−Î10 ÎÎÎÎÎ S S −20 S S ÁIOIOÁ ÁIOIOÁÎÎVTAC C=α 2 =5 °±ÎC15 VÎÎ ÎÎÎÎÎÎ −30 −20 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 |VCC±| − Supply Voltage − V t − Time − s Figure 35 Figure 36 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. 34 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS TL031 and TL031A SHORT-CIRCUIT OUTPUT CURRENT† EQUIVALENT INPUT NOISE VOLTAGE vs vs FREE-AIR TEMPERATURE ÁÁ FREQUENCY 25 ÎÎÎÎÎ ÁÁz 70ÁÁÁÁÁ − mA 1250 ÎÎÎÎÎ ÎÎÎÎVCCÎα = ±ÎÎ15 VÎÎ ÁÁÁÁ− nVHznV/H ÁÁVTRSÁÁACeS Ce ==± FÁÁ 22=i5g0 ±° uCΩ1ÁÁr5e V3ÁÁ urrent 10 ÎÎVID Î= 10Î0 mVÎ ÎÎVCCα = ±Î5 VÎ oltage 60 C V ut 5 se utp Noi − Short-Circuit O −−−110550 ÎÎVID Î= −1Î00 mÎV Î ÎÎÎÎÎÎÎÎVVCCCCÎÎÎα± == ±ÎÎÎα155 V VÎÎÎÎ Equivalent Input 50 S − IO −20 ÎVOÎ = 0Î Vn Vn −25 ÎÎÎ 40 −75 −50 −25 0 25 50 75 100 125 10 100 1 k 10 k 100 k TA − Free-Air Temperature − °C f − Frequency − Hz Figure 37 Figure 38 TL032 and TL032A TL034 and TL034A EQUIVALENT INPUT NOISE VOLTAGE EQUIVALENT INPUT NOISE VOLTAGE vs vs FREQUENCY FREQUENCY ÁÁ60 ÁÁÁÁÁ ÁÁ 90 ÁÁÁÁ Hz VCC± = ±15 V Hz VCC± = ±15 V ÁÁnV/Noise Voltage − nVHzÁÁ50 ÁÁTRSAeSÁÁ e == F 22iÁÁ5g0° uCΩreÁÁ 3 ÁÁ ÁÁÁÁnV/Noise Voltage − nVHz 786000 ÁÁSRTAeS e ==ÁÁ F 22i5g0° ÁÁuCΩre 3ÁÁ VVn − Equivalent Input n 40 VVn − Equivalent Input n 50 30 40 10 100 1 k 10 k 100 k 10 100 1 k 10 k 11 k f − Frequency − Hz f − Frequency − Hz Figure 39 Figure 40 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 35

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS TL031 and TL031A SUPPLY CURRENT† TL032 and TL032A vs SUPPLY CURRENT† SUPPLY VOLTAGE vs 250 SUPPLY VOLTAGE ÁÁÁÁ ÁÁVOÁ = 0Á 500 ÁÁÁ No Load VO = 0 20Á0 ÁÁÁ ÁNÁo LoÁad A 400 μA A ent − 150 TA = 25°C μnt −A TA = 25°C urr rre 300 C u upply 100 TA = 125°C pply C TA = 125°C ÁÁCC − SCCÁÁ TA = −55°C ÁÁC − SuÁÁC200 TA = −55°C II CC 50 II ÁÁ100 0 0 2 4 6 8 10 12 14 16 0 0 2 4 6 8 10 12 14 16 |VCC±| − Supply Voltage − V |VCC±| − Supply Voltage − V Figure 41 Figure 42 TL034 and TL034A TL031 and TL031A SUPPLY CURRENT† SUPPLY CURRENT† vs vs SUPPLY VOLTAGE FREE-AIR TEMPERATURE ÎÎÎ ÁÁÁ 1000 250 ÎVNOoÎ =L o0aÎd ÁVNOoÁ =L o0Áad VCC± = ±15 V ÎÎÎ ÁÁÁ 800 A 200 μA A − μnt −A TA = 25°C rrent VCC± = ±5 V e 600 u 150 r C ur y C pl y p uppl 400 TA = 125°C − Su 100 ÁÁC − SCÁÁ TA = −55°C ÁÁICC ICCÁÁ CC II ÁÁ200 50 0 0 0 2 4 6 8 10 12 14 16 −75 −50 −25 0 25 50 75 100 125 |VCC±| − Supply Voltage − V TA − Free-Air Temperature − °C Figure 43 Figure 44 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. 36 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS TL034 and TL034A TL032 and TL032A SUPPLY CURRENT† SUPPLY CURRENT† vs vs FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE ÁÁÁÁ 1000ÎÎÎÎ ÎÎÎÎÎ 500 ÁVNÁOo =LÁ o0adÁ VCC± = ±15 V ÎVNÎOo =L oÎ0adÎ ÎVÎCC± Î= ±1Î5 VÎ ÁÁÁÁ 800 400 A A ÎÎÎÎÎ μCurrent −A 300 VCC± = ±5 V μCurrent −A 600 ÎVÎCC± Î= ±5Î V Î ÁC − Supply CÁ200 ÁÁC − Supply C 400 ÁCCÁ ÁÁCC II II 100 200 0 0 −75 −50 −25 0 25 50 75 100 125 −75 −50 −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C Figure 45 Figure 46 SLEW RATE SLEW RATE vs vs LOAD RESISTANCE LOAD RESISTANCE ÎÎÎÎÎ 6 6 ÎVCÎC± =Î ±5 ÎV Î ÎSRÎ− Î ÎCLÎ = 1Î00 pÎF Î 5 TA = 25°C 5 ÎSeÎe FiÎgureÎ 1 Î s s μs μs V/ 4 V/ 4 − − e SR− e at at R R w 3 w 3 Sle Sle ÎSRÎ+ − − R 2 R 2 S SR+ S ÎÎÎÎÎÎ VCC± = ±15 V 1 1ÎÎÎÎCTAL ==ÎÎ 2150°0ÎÎC pFÎÎÎÎ See Figure 1 ÎÎÎÎÎÎ 0 0 1 10 100 1 10 100 RL − Load Resistance − kΩ RL − Load Resistance − kΩ Figure 47 Figure 48 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 37

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS SLEW RATE† SLEW RATE† vs vs FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE ÎÎÎÎÎ 6 6 ÎÎVCC±Î = ±Î5 VÎ ÎÎRL =Î 10 kÎΩ Î 5 CL = 100 pF 5 ÎÎSee ÎFiguÎre 1Î SR− s μSR − Slew Rate − V/s 234 SSRR−+ μSR − Slew Rate − V/ss Î234 ÎÎÎÎÎ SR+ ÎÎVCCα = α15 ÎV Î 1 1 RL = 10 kΩ ÎÎCL Î= 10Î0 pFÎÎ See Figure 1 ÎÎÎÎÎÎ 0 0 −75 −50 −25 0 25 50 75 100 125 −75 −50 −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C Figure 49 Figure 50 OVERSHOOT FACTOR TOTAL HARMONIC DISTORTION vs vs LOAD CAPACITANCE FREQUENCY 6500 VTSRAeIL( P e==P F )21 i=50g° u±kCr1Ωe0 1mV n − % 00..45 VVTAAVCO DC(=r ±m =2=s 51) ±°=C1 56 VV o ot Factor − % 3400 ÎÎÎÎVCCÎα= ±ÎÎ5 VÎÎ monic Distorti 0.3 ho ar 0.2 s H Over 20 ÎÎVCCα = ±Î15 VÎÎ Total − D 10 H T 0 0.1 0 50 100 150 200 250 100 1 k 10 k 100 k CL − Load Capacitance − pF f − Frequency − Hz Figure 51 Figure 52 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. 38 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS UNITY-GAIN BANDWIDTH UNITY-GAIN BANDWIDTH† vs vs SUPPLY VOLTAGE FREE-AIR TEMPERATURE ÁÁÁÁÁ 1.1 1.3 ÁÁÁÁÁ ÁVÁI = Á10 mÁV Á ÁVRÁIL = = 1Á 100 m kÁΩV Á ÁRCÁLL ==Á 2150 pkÁΩF Á − MHz 1.05ÁÁCTSÁÁAeL e== ÁÁF 22i55g° upCÁÁrFe 4ÁÁ − MHz 1.2 VCC+ = ±15 V ÁSÁee ÁFiguÁre 4Á h h dt dt wi wi 1.1 d d n n a 1.0 a B B n n ai ai 1.0 G G y- y- VCC± = ±5 V nit nit U 0.95 U B1 − B1 B1 − B1 0.9 0.9 0.8 0 2 4 6 8 10 12 14 16 −75 −50 −25 0 25 50 75 100 125 |VCC±|− Supply Voltage − V TA − Free-Air Temperature − °C Figure 53 Figure 54 PHASE MARGIN vs PHASE MARGIN LOAD CAPACITÁANCÁE ÁÁ vs 70° SUPPLY VOLTAGE ÁVÁI = 1Á0 mÁV 65°ÁÁVRÁÁIL = = 1 1ÁÁ00 m kΩVÁÁÁÁ 6668°° ÎÎVCCα = ±Î15 VÎ ÁÁÎRTSÁÁÎAeL e== F ÁÁÎ21i50g° ukCÁÁÎrΩe 4 ÁCTAÁL == 22Á55° pCFÁÁ n 64° ÁÎSÁÎee NÁÎoteÁÎ A 63°ÁSÁee FÁigurÁe 4 Á gi ar 62° M nn argiargi ase 60° MM h ase ase 61° Ám − PÁm 58° ÁÁÁÁPhPh Áφ Á 56° ÎÎÎÎ ÁÁφφÁÁ m − m − mm 54° ÎVCÎC± =Î ±5 ÎV ÁÁÁÁ59° 52° 50° 0 10 20 30 40 50 60 70 80 90 100 57° CL − Load Capacitance − pF 0 2 4 6 8 10 12 14 16 NOTE A: Values of phase margin below a load capacitance of 25 pF |VCC±| − Supply Voltage − V were estimated. Figure 55 Figure 56 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 39

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS PHASE MARGIN† VOLTAGE-FOLLOWER vs SMALL-SIGNAL FREE-AIR TEMPERATURE PULSE RESPONSE 67° 16 ÁÁÁÁÁ ÎÎÎÎÎ ÁVCÁC± =Á ±15Á V Á 65° ÎVCÎC± =Î ±15Î V Î 12 ÁRCLLÁ == 1100Á 0k ΩpFÁÁ V ÁTA Á= 25Á°C ÁÁ m 8 See Figure 1 Margin 63° VCC± = ±5 V oltage − 4 ÁÁÁÁÁ e V as 61° ut 0 h p − P Out φm 59° ÎÎÎÎÎ ÁÁVVO − OÁÁ−4 ÎVÎI = 1Î0 mVÎÎ −8 57° RL = 10 kΩ ÎCÎL = 2Î5 pFÎÎ −12 See Figure 4 ÎÎÎÎÎ 55° −16 −75 −50 −25 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TA − Free-Air Temperature −°C t − Time − μs Figure 57 Figure 58 VOLTAGE-FOLLOWER LARGE-SIGNAL VOLTAGE-FOLLOWER PULSE RESPONSE LARGE-SIGNAL PULSE RESPONSE 2 8 6 1 4 V V − − e e g g 2 Volta 0 VRCL C=± 1=0 ± k5Ω V Volta ÁÁVÁÁCC±ÁÁ= ±1ÁÁ5 VÁÁ utput CTAL == 2150°0C pF utput 0 ÁCRÁLL ==Á 1100 0kÁ ΩpF Á ÁO − OOÁ See Figure 1 ÁO − OOÁ −2 ÁSTÁAe e= FÁ2i5g°uCÁre 1Á ÁVVÁ−1 ÁVVÁ −4 ÁÁÁÁÁ −6 −2 −8 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 t − Time − μs t − Time − μs Figure 59 Figure 60 †Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices. 40 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION input characteristics The TL03x and TL03xA are specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction. Due to of the extremely high input impedance and resulting low bias-current requirements, the TL03x and TL03xA are well suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets easily can exceed bias-current requirements and cause degradation in system performance. It is a good practice to include guard rings around inputs (see Figure 61). These guard rings should be driven from a low-impedance source at the same voltage level as the common-mode input. Unused amplifiers should be connected as grounded unity-gain followers to avoid oscillation. VI + − VO VI − VO + − VO VI + (a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER Figure 61. Use of Guard Rings POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 41

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION output characteristics All operating characteristics (except bandwidth and phase margin) are specified with 100-pF load capacitance. The TL03x and TL03xA drive higher capacitive loads; however, as the load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation. The value of the load capacitance at which oscillation occurs varies with production lots. If an application appears to be sensitive to oscillation due to load capacitance, adding a small resistance in series with the load should alleviate the problem (see Figure 63). Capacitive loads of 1000 pF and larger can be driven if enough resistance is added in series with the output (see Figure 62). (a) CL = 100 pF, R = 0 (b) CL = 300 pF, R = 0 (c) CL = 350 pF, R = 0 (d) CL = 1000 pF, R = 0 (e) CL = 1000 pF, R = 50 Ω (f) CL = 1000 pF, R = 2 kΩ Figure 62. Effect of Capacitive Loads 15 V − R 5 V VO + −5 V − 15 V CL 10 kΩ (see Note A) NOTE A: CL includes fixture capacitance. Figure 63. Test Circuit for Output Characteristics 42 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION high-Q notch filter In general, Texas Instruments enhanced-JFET operational amplifiers serve as excellent filters. The circuit in Figure 64 provides a narrow notch at a specific frequency. Notch filters are designed to eliminate frequencies that are interfering with the operation of an application. For this filter, the center frequency can be calculated as: f (cid:2) 1 O 2(cid:3)(cid:3)R1(cid:3)C1 With the resistors and capacitors shown in Figure 64, the center frequency is 1 kHz. C1 = C3 = C2 + 2 and R1 = R3 = 2 × R2. The center frequency can be modified by varying these values. When adjusting the center frequency, ensure that the operational amplifier has sufficient gain at the frequency required. 15 V − R1 R3 VO VI + TL03x 1.5 MΩ 1.5 MΩ −15 V C2 220 pF R3 750 kΩ C1 C3 110 pF 110 pF 2 1 0 −1 B −2 d − n −3 ai G −4 −5 −6 −7 −8 0.2 0.4 0.6 0.8 1 0.2 0.4 0.6 0.8 2 f − Frequency − kHz Figure 64. High-Q Notch Filter POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 43

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION transimpedance amplifier The low-power precision TL03x allows accurate measurement of low currents. The high input impedance and low offset voltage of the TL03xA greatly simplify the design of a transimpedance amplifier. At room temperature, this design achieves 10-bit accuracy with an error of less than 1/2 LSB. Assuming that R2 is much less than R1 and ignoring error terms, the output voltage can be expressed as: (cid:4) (cid:6) V (cid:2)–I (cid:3)R R1(cid:5)R2 O IN F R2 Using the resistor values shown in the schematic for a 1-nA input current, the output voltage equals −0.1 V. If the V limit for the TL03xA is measured at ±12 V, the maximum input current for these resistor values is ±120 nA. O Similarly, one LSB on a 10-bit scale corresponds to 12 mV of output voltage, or 120 pA of input current. The following equation shows the effect of input offset voltage and input bias current on the output voltage: V (cid:2)–(cid:7)V (cid:5)R (cid:4)I (cid:5)I (cid:6)(cid:8)(cid:4)R1(cid:5)R2(cid:6) O IO F IO IB R2 If the application requires input protection for the transimpedance amplifier, do not use standard PN diodes. Instead, use low-leakage Siliconix SN4117 JFETs (or equivalent) connected as diodes across the TL03xA inputs (see Figure 65). As with all precision applications, special care must be taken to eliminate external sources of leakage and interference. Other precautions include using high-quality insulation, cleaning insulating surfaces to remove fluxes and other residue, and enclosing the application within a protective box. RF 10 MΩ 15 V Input Current + TL03xA VO − R1 90 kΩ −15 V SN4117 R2 10 kΩ Figure 65. Transimpedance Amplifier 44 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION 4-mA to 20-mA current loops Often, information from an analog sensor must be sent over a distance to the receiving circuitry. For many applications, the most feasible method involves converting voltage information to a current before transmission. The following circuits give two variations of low-power current loops. The circuit in Figure 66 requires three wires from the transmitting to receiving circuitry, while the second variation in Figure 67 requires only two wires, but includes an extra integrated circuit. Both circuits benefit from the high input impedance of the TL03xA because many inexpensive sensors do not have low output impedance. Assuming that the voltage at the noninverting input of the TL03xA is zero, the following equation determines the output current: (cid:4) (cid:6) (cid:4) (cid:6) I (cid:2)V R3 (cid:5)5V R3 (cid:2)0.16(cid:3)V (cid:5)4mA O I R1(cid:3)R R2(cid:3)R I S S The circuits presently provide 4-mA to 20-mA output current for an input voltage of 0 to 100 mV. By modifying R1, R2, and R3, the input voltage range or the output current range can be adjusted. Including the offset voltage of the operational amplifier in the above equation clearly illustrates why the low offset TL03xA was chosen: (cid:4) (cid:6) (cid:4) (cid:6) (cid:4) (cid:6) I (cid:2)V R3 (cid:5)5V R3 (cid:9)V R3 (cid:5) R3 (cid:5)R1 O I R1(cid:3)R R2(cid:3)R I R1(cid:3)R R2(cid:3)R R S S S S S (cid:2)0.16(cid:3)V (cid:5)4mA–0.17(cid:3)V I I For example, an offset voltage of 1 mV decreases the output current by 0.17 mA. Due to the low power consumption of the TL03xA, both circuits have at least 2 mA available to drive the actual sensor from the 5-V reference node. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 45

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION VCC+ = 10 V 100 kΩ R6 TL431 100 kΩ R7 5 V Ref R2 1 MΩ − R5 R1 2N3904 VI 5 kΩ + TL03xA 3.3 kΩ VEE = −5 V R4 5 kΩ 1N4148 R3 80 kΩ Signal Common RS IO 100 Ω RL 50 Ω Figure 66. Three-Wire 4-mA to 20-mA Current Loop IN VCC+ = 10 V OUT LT1019-5 GND 5 V Ref 2 8 3 R2 1 MΩ 10 μF LTC1044 4 5 − 10 μF R5 R1 2N3904 VI + 3.3 kΩ 5 kΩ TL03xA R4 5 kΩ 1N4148 R3 80 kΩ Signal Common RS IO 100 Ω RL 50 Ω Figure 67. Two-Wire 4-mA to 20-mA Current Loop 46 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION low-level light-detector preamplifier Applications that need to detect small currents require high input-impedance operational amplifiers; otherwise, the bias currents of the operational amplifier camouflage the current being monitored. Phototransistors provide a current that is proportional to the light reaching the transistor. The TL03x allows even the small currents resulting from low-level light to be detected. In Figure 68, if there is no light, the phototransistor is off and the output is high. As light is detected, the operational amplifier output begins pulling low. Adjusting R4 both compensates for offset voltage of the amplifier and adjusts the point of light detection by the amplifier. 15 V R6 R1 10 kΩ 10 kΩ + TL03x R3 10 kΩ 100 pCF1 VO − R7 R4 TIL601 10 kΩ 10 kΩ R5 10 kΩ R2 5 kΩ −15 V Figure 68. Low-Level Light-Detector Preamplifier POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 47

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION audio-distribution amplifier This audio-distribution amplifier (see Figure 69) feeds the input signal to three separate output channels. U1A amplifies the input signal with a gain of 10, while U1B, U1C, and U1D serve as buffers to the output channels. The gain response of this circuit is very flat from 20 Hz to 20 kHz. The TL03x allows quick response to the input signal while maintaining low power consumption. R4 1 MΩ U1B − VCC+ VOA + C1 1 μF − VI + U1C U1A − VOB R1 R2 + 100 kΩ 100 kΩ VCC+ R5 U1D 10 kΩ C2 R3 − 100 μF 100 kΩ + VOC NOTE A: U1A through U1D = TL03x; VCC+ = 5 V Figure 69. Audio-Distribution Amplifier Circuit 48 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION instrumentation amplifier with linear gain adjust The low offset voltage and low power consumption of the TL03x provide an accurate but inexpensive instrumentation amplifier (see Figure 70). This particular configuration offers the advantage that the gain can be linearly set by one resistor: R6 V = × (V − V ) O B A R5 Adjusting R6 varies the gain. The value of R6 always should be greater than, or equal to, the value of R5 to ensure stability. The disadvantage of this instrumentation amplifier topology is the high degree of CMRR degradation resulting from mismatches between R1, R2, R3, and R4. For this reason, these four resistors should be 0.1%-tolerance resistors. VCC+ R1 R3 10 kΩ 10 kΩ 0.1% 0.1% − VA + U1A U1C − VO + R5 R6 100 kΩ 1 MΩ U1B U1D − − VB + R2 R4 + 10 kΩ 10 kΩ R7 0.1% 0.1% VCC− 100 kΩ NOTE A: U1A through U1D = TL03x; VCC± = ±15 V Figure 70. Instrumentation Amplifier With Linear Gain-Adjust Circuit POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 49

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) TL031CD ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL031C & no Sb/Br) TL031CDR ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL031C & no Sb/Br) TL031CP ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL031CP & no Sb/Br) TL031ID ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL031I & no Sb/Br) TL031IDG4 ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL031I & no Sb/Br) TL031IP ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type -40 to 85 TL031IP & no Sb/Br) TL032ACD ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 032AC & no Sb/Br) TL032ACDR ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 032AC & no Sb/Br) TL032ACP ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL032ACP & no Sb/Br) TL032AID ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 032AI & no Sb/Br) TL032AIDR ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 032AI & no Sb/Br) TL032AIP ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type -40 to 85 TL032AIP & no Sb/Br) TL032CD ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL032C & no Sb/Br) TL032CDE4 ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL032C & no Sb/Br) TL032CDR ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL032C & no Sb/Br) TL032CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL032C & no Sb/Br) TL032CP ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL032CP & no Sb/Br) Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) TL032CPE4 ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL032CP & no Sb/Br) TL032CPSR ACTIVE SO PS 8 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 T032 & no Sb/Br) TL032ID ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL032I & no Sb/Br) TL032IDR ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL032I & no Sb/Br) TL032IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL032I & no Sb/Br) TL032IP ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type -40 to 85 TL032IP & no Sb/Br) TL034ACD ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL034AC & no Sb/Br) TL034ACDR ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL034AC & no Sb/Br) TL034ACN ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL034ACN & no Sb/Br) TL034AID ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL034AI & no Sb/Br) TL034AIDR ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL034AI & no Sb/Br) TL034AIN ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type -40 to 85 TL034AIN & no Sb/Br) TL034CD ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL034C & no Sb/Br) TL034CDR ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL034C & no Sb/Br) TL034CN ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL034CN & no Sb/Br) TL034CNE4 ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type 0 to 70 TL034CN & no Sb/Br) TL034CNSR ACTIVE SO NS 14 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 TL034 & no Sb/Br) TL034CPW ACTIVE TSSOP PW 14 90 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 T034 & no Sb/Br) Addendum-Page 2

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) TL034CPWR ACTIVE TSSOP PW 14 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 T034 & no Sb/Br) TL034ID ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL034I & no Sb/Br) TL034IDR ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL034I & no Sb/Br) TL034IDRG4 ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 TL034I & no Sb/Br) TL034IN ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type -40 to 85 TL034IN & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and Addendum-Page 3

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 4

PACKAGE MATERIALS INFORMATION www.ti.com 16-Oct-2019 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) TL031CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL034ACDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 TL034AIDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 TL034CDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 TL034CNSR SO NS 14 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1 TL034CPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 TL034IDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 16-Oct-2019 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) TL031CDR SOIC D 8 2500 340.5 338.1 20.6 TL032ACDR SOIC D 8 2500 340.5 338.1 20.6 TL032AIDR SOIC D 8 2500 340.5 338.1 20.6 TL032CDR SOIC D 8 2500 340.5 338.1 20.6 TL032IDR SOIC D 8 2500 340.5 338.1 20.6 TL034ACDR SOIC D 14 2500 367.0 367.0 38.0 TL034AIDR SOIC D 14 2500 367.0 367.0 38.0 TL034CDR SOIC D 14 2500 367.0 367.0 38.0 TL034CNSR SO NS 14 2000 367.0 367.0 38.0 TL034CPWR TSSOP PW 14 2000 367.0 367.0 35.0 TL034IDR SOIC D 14 2500 367.0 367.0 38.0 PackMaterials-Page2

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PACKAGE OUTLINE D0008A SOIC - 1.75 mm max height SCALE 2.800 SMALL OUTLINE INTEGRATED CIRCUIT C SEATING PLANE .228-.244 TYP [5.80-6.19] .004 [0.1] C A PIN 1 ID AREA 6X .050 [1.27] 8 1 2X .189-.197 [4.81-5.00] .150 NOTE 3 [3.81] 4X (0 -15 ) 4 5 8X .012-.020 B .150-.157 [0.31-0.51] .069 MAX [3.81-3.98] .010 [0.25] C A B [1.75] NOTE 4 .005-.010 TYP [0.13-0.25] 4X (0 -15 ) SEE DETAIL A .010 [0.25] .004-.010 0 - 8 [0.11-0.25] .016-.050 [0.41-1.27] DETAIL A (.041) TYPICAL [1.04] 4214825/C 02/2019 NOTES: 1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed .006 [0.15] per side. 4. This dimension does not include interlead flash. 5. Reference JEDEC registration MS-012, variation AA. www.ti.com

EXAMPLE BOARD LAYOUT D0008A SOIC - 1.75 mm max height SMALL OUTLINE INTEGRATED CIRCUIT 8X (.061 ) [1.55] SYMM SEE DETAILS 1 8 8X (.024) [0.6] SYMM (R.002 ) TYP [0.05] 5 4 6X (.050 ) [1.27] (.213) [5.4] LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:8X SOLDER MASK SOLDER MASK METAL OPENING OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL .0028 MAX .0028 MIN [0.07] [0.07] ALL AROUND ALL AROUND NON SOLDER MASK SOLDER MASK DEFINED DEFINED SOLDER MASK DETAILS 4214825/C 02/2019 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com

EXAMPLE STENCIL DESIGN D0008A SOIC - 1.75 mm max height SMALL OUTLINE INTEGRATED CIRCUIT 8X (.061 ) [1.55] SYMM 1 8 8X (.024) [0.6] SYMM (R.002 ) TYP [0.05] 5 4 6X (.050 ) [1.27] (.213) [5.4] SOLDER PASTE EXAMPLE BASED ON .005 INCH [0.125 MM] THICK STENCIL SCALE:8X 4214825/C 02/2019 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. www.ti.com

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