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参数 | 数值 |
产品目录 | 分立半导体产品半导体 |
描述 | TRANSISTORS NPN 60V 6A TO-220两极晶体管 - BJT COMPLEMENTARY SILICON POWER |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | 点击此处下载产品Datasheet |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,STMicroelectronics TIP41A- |
数据手册 | 点击此处下载产品Datasheet |
产品型号 | TIP41A |
不同 Ib、Ic时的 Vce饱和值(最大值) | 1.5V @ 600mA,6A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 15 @ 3A,4V |
产品目录页面 | 点击此处下载产品Datasheet |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | TO-220AB |
其它名称 | 497-5170-5 |
功率-最大值 | 2W |
包装 | 管件 |
发射极-基极电压VEBO | 5 V |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
工厂包装数量 | 50 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 65 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 6 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
电压-集射极击穿(最大值) | 60V |
电流-集电极(Ic)(最大值) | 6A |
电流-集电极截止(最大值) | 700µA |
直流集电极/BaseGainhfeMin | 30 |
系列 | TIP41 |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 60 V |
集电极连续电流 | 6 A |
频率-跃迁 | - |
TIP41 TIP41A TIP41B www.centralsemi.com TIP41C DESCRIPTION: NPN SILICON The CENTRAL SEMICONDUCTOR TIP41 SERIES POWER TRANSISTOR types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS Collector-Base Voltage VCBO 40 60 80 100 V Collector-Emitter Voltage VCEO 40 60 80 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 6.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 2.0 A Power Dissipation PD 65 W Power Dissipation (TA=25°C) PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEO VCE=30V (TIP41, TIP41A) 0.7 mA ICEO VCE=60V (TIP41B, TIP41C) 0.7 mA ICES VCE=Rated VCEO 0.4 mA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA (TIP41) 40 V BVCEO IC=30mA (TIP41A) 60 V BVCEO IC=30mA (TIP41B) 80 V BVCEO IC=30mA (TIP41C) 100 V VCE(SAT) IC=6.0A, IB=0.6A 1.5 V VBE(ON) VCE=4.0V, IC=6.0A 2.0 V hFE VCE=4.0V, IC=0.3A 30 hFE VCE=4.0V, IC=3.0A 15 75 hfe VCE=10V, IC=0.5A, f=1.0kHz 20 fT VCE=10V, IC=0.5A, f=1.0MHz 3.0 MHz ton IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω 0.6 μs toff IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω 1.0 μs R1 (13-December 2010)
TIP41 TIP41A TIP41B TIP41C NPN SILICON POWER TRANSISTOR TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (13-December 2010) www.centralsemi.com
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