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  • 型号: TIP33CG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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TIP33CG产品简介:

ICGOO电子元器件商城为您提供TIP33CG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TIP33CG价格参考¥询价-¥询价。ON SemiconductorTIP33CG封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 100V 10A 3MHz 80W 通孔 TO-247。您可以下载TIP33CG参考资料、Datasheet数据手册功能说明书,资料中有TIP33CG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS NPN 10A 100V HI PWR TO247两极晶体管 - BJT 10A 100V 80W NPN

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ON Semiconductor TIP33CG-

数据手册

点击此处下载产品Datasheet

产品型号

TIP33CG

PCN封装

点击此处下载产品Datasheet

不同 Ib、Ic时的 Vce饱和值(最大值)

4V @ 2.5A,10A

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

20 @ 3A,4V

产品目录页面

点击此处下载产品Datasheet

产品种类

两极晶体管 - BJT

供应商器件封装

TO-247

其它名称

TIP33CGOS

功率-最大值

80W

包装

管件

发射极-基极电压VEBO

5 V

商标

ON Semiconductor

增益带宽产品fT

3 MHz

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-247-3

封装/箱体

TO-247

工厂包装数量

30

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

80 W

最大工作温度

+ 150 C

最大直流电集电极电流

10 A

最小工作温度

- 65 C

标准包装

30

电压-集射极击穿(最大值)

100V

电流-集电极(Ic)(最大值)

10A

电流-集电极截止(最大值)

700µA

直流集电极/BaseGainhfeMin

40

系列

TIP33C

配置

Single

集电极—发射极最大电压VCEO

100 V

集电极—基极电压VCBO

100 V

集电极—射极饱和电压

1 V

集电极连续电流

10 A

频率-跃迁

3MHz

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PDF Datasheet 数据手册内容提取

TIP33A, TIP33C NPN High-Power Transistors Designedfor general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V http://onsemi.com Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in 10 AMPERE • These are Pb−Free Devices* NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP33A VCEO 60 Vdc TIP33C 100 Collector − Base Voltage TIP33A VCBO 60 Vdc TIP33C 100 SOT−93 (TO−218) CASE 340D Emitter − Base Voltage VEBO 5.0 Vdc STYLE 1 Collector Current − Continuous IC 10 Adc − Peak (Note 1) 15 Apk Base Current − Continuous IB 3.0 Adc Total Device Dissipation @ TC = 25°C PD 80 Watts Derate above 25°C 0.64 W/°C TO−247 Operating and Storage Junction TJ, Tstg –65 to °C CASE 340L Temperature Range +150 STYLE 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit NOTE: Effective June 2012 this device will Thermal Resistance, Junction−to−Case R(cid:2)JC 1.56 °C/W be available only in the TO−247 Thermal Resistance, Junction−to−Ambient R(cid:2)JA 35.7 °C/W package. Reference FPCN# 16827. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the ORDERING INFORMATION Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2012 − Rev. 4 TIP33C/D

TIP33A, TIP33C MARKING DIAGRAMS TO−247 TO−218 TIP33x AYWWG AYWWG TIP33x 1 BASE 3 EMITTER 1 BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR TIP33x =Device Code A =Assembly Location Y =Year WW =Work Week G =Pb−Free Package ORDERING INFORMATION Device Order Number Package Type Shipping TIP33AG TO−218 30 Units / Rail (Pb−Free) TIP33CG TO−218 30 Units / Rail (Pb−Free) TIP33AG TO−247 30 Units / Rail (Pb−Free) TIP33CG TO−247 30 Units / Rail (Pb−Free) http://onsemi.com 2

TIP33A, TIP33C ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) TIP33A VCEO(sus) 60 − Vdc (IC = 30 mA, IB = 0) TIP33C 100 − Collector−Emitter Cutoff Current ICEO − 0.7 mA (VCE = 30 V, IB = 0) TIP33A (VCE = 60 V, IB = 0) TIP33C Collector−Emitter Cutoff Current ICES − 0.4 mA (VCE = Rated VCEO, VEB = 0) Emitter−Base Cutoff Current IEBO − 1.0 mA (VEB = 5.0 V, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain hFE − (IC = 1.0 A, VCE = 4.0 V) 40 − (IC = 3.0 A, VCE = 4.0 V) 20 100 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 3.0 A, IB = 0.3 A) − 1.0 (IC = 10 A, IB = 2.5 A) − 4.0 Base−Emitter On Voltage VBE(on) Vdc (IC = 3.0 A, VCE = 4.0 V) − 1.6 (IC = 10 A, VCE = 4.0 V) − 3.0 DYNAMIC CHARACTERISTICS Small−Signal Current Gain hfe 20 − − (IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) Current−Gain — Bandwidth Product fT 3.0 − MHz (IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. http://onsemi.com 3

TIP33A, TIP33C 500 200 VCE = 4.0 V N TJ = 25°C AI G 100 T N E R R 50 U C C D , E 20 NPN F h PNP 10 5.0 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain 20 L = 200 (cid:3)H PS) PS) IC/IB ≥ 5.0 NT (AM 1150 1.0(cid:2)ms 300(cid:2)(cid:3)s NT (AM 15 VTCB E=(o 1ff0) 0=° 0C to 5.0 V E E R R R 5.0 R U U C 3.0 10(cid:2)ms dc C 10 OR 2.0 OR T T EC 1.0 SECONDARY BREAKDOWN LIMIT EC LL BONDING WIRE LIMIT LL CO 0.5 THERMAL LIMIT CO 5.0 , C , C I 0.2 TC = 25°C TIP33A I TIP33C 0.1 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Figure 3. Maximum Rated Forward Bias Safe Operating Area Safe Operating Area FORWARD BIAS REVERSE BIAS The Forward Bias Safe Operating Area represents the The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand voltage and current conditions these devices can withstand during forward bias. The data is based on T = 25(cid:2)C; T during reverse biased turn−off. This rating is verified under C J(pk) is variable depending on power level. Second breakdown clamped conditions so the device is never subjected to an pulse limits are valid for duty cycles to 10%, and must be avalanche mode. derated thermally for T > 25(cid:2)C. C http://onsemi.com 4

TIP33A, TIP33C PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E C NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI B Q E Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX U 4 A --- 20.35 --- 0.801 A B 14.70 15.20 0.579 0.598 S L C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054 K 1 2 3 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L --- 16.20 --- 0.638 Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF J V 1.75 REF 0.069 D H STYLE 1: PIN 1. BASE V 2. COLLECTOR G 3. EMITTER 4. COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI C Y14.5M, 1982. −B− 2. CONTROLLING DIMENSION: MILLIMETER. E MILLIMETERS INCHES U L DIM MIN MAX MIN MAX A 20.32 21.08 0.800 8.30 N 4 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 A −Q− D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 P J 0.40 0.80 0.016 0.031 −Y− K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 K N 4.32 5.49 0.170 0.216 P --- 4.50 --- 0.177 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 W J F2 PL H STYPLINE 13.:BASE G 2.COLLECTOR D3 PL 3.EMITTER 4.COLLECTOR 0.25 (0.010) M Y Q S http://onsemi.com 5

TIP33A, TIP33C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com TIP33C/D 6