THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 50 MHz to 750 MHz CASCADEABLE AMPLIFIER CheckforSamples:THS9000 FEATURES APPLICATIONS 1 • HighDynamicRange • IFAmplifiers 23 – OIP =36dBm – TDMA:GSM,IS-136,EDGE/UWE-136 3 – NF< 4.5dB – CDMA:IS-95,UMTS,CDMA2000 • Single-SupplyVoltage – WirelessLocalLoops • HighSpeed – WirelessLAN:IEEE802.11 – V =3Vto5V S – I =Adjustable S • Input/OutputImpedance – 50Ω DESCRIPTION The THS9000 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier incorporates internal impedance matching to 50 Ω. The part mounted on the standard EVM achieves greater than15-dBinputandoutputreturnlossfrom50MHzto325MHzwithV =5V,R =237Ω,L =470nH. S (BIAS) (COL) Design requires only two dc-blocking capacitors, one power-supply bypass capacitor, one RF choke, and one biasresistor. Figure1. FUNCTIONALBLOCKDIAGRAM VS C(BYP) L(COL) IF(OUT) C(BLK) 6 5 4 THS9000 VS 1 2 3 IF(IN) C(BLK) R(BIAS) 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. PowerPADisatrademarkofTexasInstrumentsIncorporated. 2 Allothertrademarksarethepropertyoftheirrespectiveowners. 3 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2003–2013,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. AVAILABLEOPTIONS PACKAGEDDEVICE(1) PACKAGETYPE TRANSPORTMEDIA,QUANTITY THS9000DRWT TapeandReel,250 2×2QFN(2) THS9000DRWR TapeandReel,3000 (1) Forthemostcurrentpackageandorderinginformation,seethePackageOptionAddendumattheend ofthisdocument,orseetheTIWebsiteatwww.ti.com. (2) ThePowerPAD™iselectricallyisolatedfromallotherpins. ABSOLUTE MAXIMUM RATINGS Overoperatingfree-airtemperature(unlessotherwisenoted)(1) THS9000 UNIT Supplyvoltage,GNDtoV 5.5 V S Inputvoltage GNDtoV S Continuouspowerdissipation SeeDissipationRatingtable Maximumjunctiontemperature,T +150 °C J Maximumjunctiontemperature,continuousoperation,longtermreliability, °C T (2) +125 J Storagetemperature,T –65to+150 °C stg Leadtemperature1,6mm(1/16inch)fromcasefor10seconds +300 °C HBM 2000 V ESDRatings: CDM 1500 V MM 100 V (1) Theabsolutemaximumratingsunderanyconditionislimitedbytheconstraintsofthesiliconprocess.Stressesabovetheseratingsmay causepermanentdamage.Exposuretoabsolutemaximumconditionsforextendedperiodsmaydegradedevicereliability.Theseare stressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthosespecifiedisnotimplied. (2) Themaximumjunctiontemperatureforcontinuousoperationislimitedbypackageconstraints.Operationabovethistemperaturemay resultinreducedreliabilityand/orlifetimeofthedevice. DISSIPATION RATING TABLE θ POWERRATING(1) PACKAGE JA (°C/W) T ≤+25°C T =+85°C A A DRW(2) (3) 91 1.1W 440mW (1) Powerratingisdeterminedwithajunctiontemperatureof+125°C.ThermalmanagementofthefinalPCBshouldstrivetokeepthe junctiontemperatureatorbelow+125°Cforbestperformance. (2) ThisdatawastakenusingtheJEDECstandardHigh-KtestPCB. (3) TheTHS9000incorporatesaPowerPADontheundersideofthechip.Thisactsasaheatsinkandmustbeconnectedtoathermally dissipatingplaneforproperpowerdissipation.Failuretodosomayresultinexceedingthemaximumjunctiontemperature,whichcould permanentlydamagethedevice.SeeTITechnicalBriefSLMA002formoreinformationaboututilizingthePowerPADthermally- enhancedpackage. RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT Supplyvoltage 2.7 5 V Operatingfree-airtemperature,T –40 +85 °C A Supplycurrent 100 mA 2 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 ELECTRICAL CHARACTERISTICS TypicalPerformance(V =5V,R =237Ω,L =470nH)(unlessotherwisenoted) S (BIAS) (COL) PARAMETER TESTCONDITIONS MIN TYP MAX UNITS f=50MHz 15.9 Gain dB f=350MHz 15.6 f=50MHz 36 OIP dBm 3 f=350MHz 35 f=50MHz 20.8 1-dBcompression dBm f=350MHz 20.6 f=50MHz 15 Inputreturnloss dB f=350MHz 19.7 f=50MHz 17.2 Outputreturnloss dB f=350MHz 15.1 f=50MHz 21 Reverseisolation dB f=350MHz 20 f=50MHz 3.6 Noisefigure dB f=350MHz 4 PINASSIGNMENT IF(IN) 1 6 VS GND 2 5 L(COL) BIAS 3 4 IF(OUT) TerminalFunctions PINNUMBERS NAME DESCRIPTION 1 IF Signalinput (IN) 2 GND Negativepower-supplyinput 3 BIAS Biascurrentadjustmentinput 4 IF Signaloutput (OUT) 5 L Outputtransistorloadinductor (COL) 6 V Positivepower-supplyinput S SIMPLIFIEDSCHEMATIC VS L(COL) BIAS IF(IN) IF(OUT) GND Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:THS9000

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com TABLE OF GRAPHS FIGURE S21Frequencyresponse 1 S22Frequencyresponse 2 S11Frequencyresponse 3 S12Frequencyresponse 4 S21vsR 5 (Bias) OutputpowervsInputpower 6 OIP vsFrequency 7 2 NoisefigurevsFrequency 8 OIP vsFrequency 9 3 I SupplycurrentvsR 10 S (Bias) S21Frequencyresponse 11 S22Frequencyresponse 12 S11Frequencyresponse 13 S12Frequencyresponse 14 NoisefigurevsFrequency 15 OIP vsFrequency 16 2 OutputpowervsInputpower 17 OIP vsFrequency 18 3 TYPICAL CHARACTERISTICS S-Parameters of THS9000 as mounted on the EVM with V = 5 V, R = 237 Ω, and L = 68 nH to 470 nH S (BIAS) (COL) atroomtemperature. S21 S22 FREQUENCYRESPONSE FREQUENCYRESPONSE 17 0 L(COL) = 470 nH L(COL) = 68 nH L(COL) = 220 nH 16 L(COL) = 330 nH L(COL) = 100 nH −5 15 B B S21 − d 14 S22 − d −10 L(COL) = 220 nH 13 L(COL) = 100 nH L(COL) = 330 nH 12 −15 L(COL) = 68 nH L(COL) = 470 nH 11 10 VRS(B =IA 5S )V =, 237(cid:1), −20 VRS(B =IA 5S )V =, 237(cid:1), 1 M 10 M 100 M 1 G 1 M 10 M 100 M 1 G f − Frequency − Hz f − Frequency − Hz Figure2. Figure3. 4 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 TYPICAL CHARACTERISTICS (continued) S11 S12 FREQUENCYRESPONSE FREQUENCYRESPONSE 0 −15 L(COL) = 68 nH VS = 5 V, −5 L(COL) = 470 nH R(BIAS) = 237(cid:1), −10 L(COL) = 100 nH −20 L(COL) = 330 nH −15 L(COL) = 220 nH B B d d −25 1 − −20 L(COL) = 330 nH 2 − 1 1 S L(COL) = 470 nH S L(COL) = 220 nH −25 −30 L(COL) = 100 nH −30 L(COL) = 68 nH −35 −35 −40 VS = 5 V, R(BIAS) = 237(cid:1), −45 −40 1 M 10 M 100 M 1 G 1 M 10 M 100 M 1 G f − Frequency − Hz f − Frequency − Hz Figure4. Figure5. S-Parameters of THS9000 as mounted on the EVM with V = 3 V and 5 V, R = various, and L = 470 nH S (BIAS) (COL) atroomtemp. S21 OUTPUTPOWER vs vs R INPUTPOWER (BIAS) 17 22 RVS(B =IA 5S )V = 237 (cid:1), R(BIAS) =V 5S6 =.2 3 (cid:1) V, 21 VS = 5 V, IS = 97 mA 16 VS = 5 V, IS = 71 mA 20 Bm 19 VS = 5 V, IS = 48 mA 15 R(BIAS) = 97.7(cid:1), − d 18 B VS = 3 V r d e S21 − 14 RVS(B =IA 5S )V = 340 (cid:1), ut Pow 1167 13 R(BIAS) = 174 (cid:1), VS = 3 V utp 15 12 R(BIAS) = 549 (cid:1), VS = 5 V P− OO 14 VS =V 3S V=, 3IS V =, I4S9 = m 6A9 mA 13 VS = 3 to 5 V, 12 VS = 3 V, IS = 91 mA 11 R(BIAS) = Various, L(COL) = 470 nH 11 10 10 1 M 10 M 100 M 1 G −6 −4 −2 0 2 4 6 8 10 12 14 f − Frequency − Hz PI − Input Power − dBm Figure6. Figure7. Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:THS9000

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com TYPICAL CHARACTERISTICS (continued) OIP NOISEFIGURE 2 vs vs FREQUENCY FREQUENCY 50 5 VS = 5 V, 48 IS = 97 mA IS V=S 9 =1 3m VA, 4.75 VS = 5 V, IS = 97 mA 46 IS V=S 6 =9 3m VA, 4.5 VS = 5 V, IS = 71 mA B VS = 5 V, IS = 48 mA m 44 d 4.25 B − d e OIP− 2 42 e Figur 4 IS V=S 7 =0 3m VA, s 40 VS = 5 V, IS = 71 mA oi 3.75 N VS = 3 V, IS = 49 mA VS = 3 V, IS = 49 mA 38 3.5 VS = 3 V, IS = 91 mA 36 3.25 VS = 5 V, IS = 48 mA 34 3 0 50 100 150 200 250 300 0 100 200 300 400 500 f − Frequency − MHz f − Frequency − MHz Figure8. Figure9. OIP SUPPLYCURRENT 3 vs vs FREQUENCY R (BIAS) 40 200 38 VS V= S3 =V ,5 I SV ,= I S9 1= m71A mA VS = 5 V, IS = 97 mA 180 A m 160 36 − nt 140 e m 34 rr B u d C 120 − y P3 32 ppl VS = 5 V OI VS = 3 V, IS = 69 mA Su 100 30 − I S 80 28 VS = 3 V, IS = 49 mA 60 VS = 3 V 26 40 VS = 5 V, IS = 48 mA 24 20 0 100 200 300 400 500 50 150 250 350 450 550 f − Frequency − MHz R(BIAS) − (cid:1) Figure10. Figure11. 6 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 TYPICAL CHARACTERISTICS (continued) THS9000 as mounted on the EVM with V = 5 V, R = 237 Ω, and L = 470 nH at +40°C, +25°C, and S (BIAS) (COL) +85°C. S21 S22 FREQUENCYRESPONSE FREQUENCYRESPONSE 17 TA = −45(cid:1)C 0 VS = 5 V, R(BIAS) = 237 (cid:1), 16 L(COL) = 470 nH TA = 25(cid:1)C B −5 − d 15 TA = 85(cid:1)C s B r d ete 14 − m 2 ara S2 −10 TA = 85(cid:1)C P S- 13 − 1 S2 12 TA = 25(cid:1)C −15 11 VS = 5 V, R(BIAS) = 327 (cid:1), TA = −45(cid:1)C L(COL) = 470 nH 10 −20 1 M 10 M 100 M 1 G 1 M 10 M 100 M 1 G f − Frequency − Hz f − Frequency − Hz Figure12. Figure13. S11 S12 FREQUENCYRESPONSE FREQUENCYRESPONSE 0 −15 −5 VRS(B =IA 5S )V =, 237 (cid:1), VRS(B =IA 5S )V =, 237 (cid:1), TA = −45(cid:1)C L(COL) = 470 nH L(COL) = 470 nH −20 −10 −15 TA = 25(cid:1)C B B 11 − d −20 12 − d −25 TA = 85(cid:1)C S S −25 TA = 85(cid:1)C −30 −30 −35 TA = −45(cid:1)C −35 −40 TA = 25(cid:1)C −45 −40 1 M 10 M 100 M 1 G 1 M 10 M 100 M 1 G f − Frequency − Hz f − Frequency − Hz Figure14. Figure15. Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:THS9000

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com TYPICAL CHARACTERISTICS (continued) NOISEFIGURE OIP 2 vs vs FREQUENCY FREQUENCY 6 50 5.5 VRL(S(CB O=IA L5S) )=V = ,4 27307 n (cid:1)H, 49 VRL(S(CB O=IA L5S) )=V = ,4 27307 n (cid:1)H, 48 TA = 85(cid:1)C 47 ure − dB 4.55 − dBm 4456 TA = −45(cid:1)C g Fi P2 oise TA = 25(cid:1)C OI 44 TA = 25(cid:1)C N 4 43 TA = 85(cid:1)C 42 3.5 TA = −45(cid:1)C 41 3 40 0 100 200 300 400 500 50 100 150 200 250 300 f − Frequency − MHz f − Frequency − MHz Figure16. Figure17. OUTPUTPOWER OIP 3 vs vs INPUTPOWER FREQUENCY 22 40 21 VRL(S(CB O=IA L5S) )=V = ,4 27307 n (cid:1)H, TA = 85(cid:1)C 39 VRL(S(CB O=IA L5S) )=V = ,4 27307 n (cid:1)H, f = 100 MHz m 20 38 TA = 25(cid:1)C B d − wer 19 Bm 37 TA = −45(cid:1)C Po − d utput 18 TA = −45(cid:1)C OIP3 36 TA = 85(cid:1)C O 17 35 − O P 16 34 TA = 25(cid:1)C 15 33 14 32 −2 0 2 4 6 8 10 12 50 100 150 200 250 300 350 400 450 500 PI − Input Power − dBm f − Frequency − MHz Figure18. Figure19. 8 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 TYPICAL CHARACTERISTICS Table1.S-ParametersTablesofTHS9000withEVMDe-Embedded V =5V,R =237Ω,L =470nH S (BIAS) (COL) S21 S11 S22 S12 FREQUENCY GAIN(dB) PHASE(°) GAIN(dB) PHASE(°) GAIN(dB) PHASE(°) GAIN(dB) PHASE(°) (MHz) 1.0 –4.2 –169.5 –2.4 –0.9 –1.9 158.1 –63.1 167.0 5.0 11.3 –124.5 –1.5 –14.5 –2.6 138.0 –32.9 122.4 10.2 15.8 –147.8 –2.2 –42.3 –5.0 101.0 –24.0 80.4 19.7 16.4 –169.4 –6.5 –69.7 –10.5 66.6 –21.3 41.6 50.1 16.0 177.2 –15.6 –91.4 –16.7 30.1 –20.7 14.4 69.7 15.9 173.5 –19.8 –97.7 –17.8 17.7 –20.7 9.1 102.4 15.9 168.4 –26.9 –102.6 –18.2 4.3 –20.7 4.4 150.5 15.8 162.0 –39.0 14.1 –18.1 –8.6 –20.7 –0.7 198.1 15.7 155.8 –27.6 50.8 –17.4 –19.6 –20.7 –1.7 246.9 15.7 149.6 –23.7 40.6 –16.4 –26.7 –20.7 –3.5 307.6 15.6 141.9 –19.8 33.1 –14.9 –37.2 –20.6 –5.7 362.8 15.6 134.7 –17.3 24.7 –13.3 –44.3 –20.4 –7.7 405.0 15.6 129.2 –15.5 20.3 –12.1 –51.0 –20.2 –10.0 452.2 15.6 122.3 –13.8 14.7 –10.6 –58.1 –19.9 –12.5 504.7 15.5 114.9 –11.8 6.3 –9.0 –66.5 –19.7 –16.2 563.4 15.4 105.8 –9.7 –2.9 –7.2 –77.5 –19.4 –22.4 595.3 15.3 100.5 –8.6 –9.1 –6.3 –83.6 –19.3 –26.2 664.5 14.9 88.7 –6.3 –24.2 –4.4 –99.7 –19.3 –36.7 702.1 14.6 81.0 –5.3 –33.2 –3.7 –109.2 –19.6 –43.4 741.8 14.1 76.3 –4.4 –42.9 –3.0 –118.8 –19.9 –50.2 828.1 12.7 60.2 –2.9 –65.5 –2.3 –142.8 –21.7 –69.2 874.9 11.2 51.0 –2.5 –77.9 –2.5 –155.0 –23.6 –75.0 924.4 10.1 50.2 –2.4 –90.4 –3.1 –166.0 –25.8 –85.2 976.7 8.8 51.8 –2.5 ––100.7 –4.3 –173.7 –28.4 –78.9 1031.9 9.2 58.2 –2.6 –108.7 –4.7 –175.2 –29.7 –68.7 1090.3 8.9 48.0 –2.5 –115.2 –4.4 –164.7 –31.4 –69.1 1151.9 8.8 39.9 –2.3 –123.3 –3.5 –175.4 –33.6 –83.4 1217.1 8.0 27.7 –2.1 –132.0 –3.0 175.3 –38.2 –81.4 1285.9 7.0 30.5 –2.0 –140.7 –2.8 168.7 –42.3 –25.5 1358.6 5.6 20.6 –1.9 –149.4 –2.9 159.1 –42.2 41.6 1435.5 4.3 19.5 –1.8 –159.4 –3.0 151.3 –38.7 63.3 1516.6 3.4 17.7 –1.9 –168.3 –3.2 144.7 –33.6 62.4 1602.4 2.8 16.5 –2.0 –177.2 –3.5 138.2 –30.5 59.6 1693.0 2.2 8.6 –2.1 174.0 –3.8 131.4 –28.1 56.2 1788.8 1.4 –0.7 –2.2 165.4 –4.1 124.6 –26.2 50.4 1889.9 0.5 –4.1 –2.3 157.0 –4.5 118.2 –24.7 42.4 1996.8 –0.6 –4.5 –2.6 150.0 –4.9 111.2 –24.2 39.5 Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:THS9000

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com APPLICATION INFORMATION The THS9000 is a medium power, cascadeable, amplifier optimized for high intermediate frequencies in radios. The amplifier is unconditionally stable and the design requires only two dc-blocking capacitors, one power-supply bypasscapacitor,oneRFchoke,andonebiasresistor.RefertoFigure26forthecircuitdiagram. TheTHS9000operateswithapower-supplyvoltagerangingfrom2.5Vto5.5V. The value of R sets the bias current to the amplifier. Refer to Figure 11. This allows the designer to trade-off (BIAS) linearityversuspowerconsumption.R canberemovedwithoutdamagetothedevice. (BIAS) Component selection of C , C , and C is not critical. The values shown in Figure 26 were used for all the (BYP) IN OUT datashowninthisdatasheet. The amplifier incorporates internal impedance matching to 50 Ω that can be adjusted for various frequencies of operationbyproperselectionofL . (COL) Figure 20 shows the s-parameters of the part mounted on the standard EVM with V = 5 V, R = 237 Ω, and S (BIAS) L = 470 nH. With this configuration, the part is very broadband, and achieves greater than 15-dB input and (COL) outputreturnlossfrom50MHzto325MHz. Figure 21 shows the S-parameters of the part mounted on the standard EVM with V = 5 V, R = 237 Ω, and S (BIAS) L = 68 nH. With this configuration, the part achieves greater than 15-dB input and output return loss from (COL) 250MHzto400MHz. 17 5 16 5 S11 S21 VRS(B =IA 5S )V =, 237 (cid:1), S22 S21 16 L(COL) = 470 nH 0 15 0 15 −5 S11 −5 14 B B S21 − dB 1134 −−1150 12, S22 − d S21 − dB 13 −−1150 S12, S22 − d 12 S22 −20 S11, S 12 S12 −20 S11, 11 VS = 5 V, −25 11 S12 −25 R(BIAS) = 237 (cid:1), L(COL) = 68 nH 10 −30 10 −30 1 M 10 M 100 M 1 G 1 M 10 M 100 M 1 G f − Frequency − Hz f − Frequency − Hz Figure20.S-ParametersofTHS9000mountedon Figure21.S-ParametersofTHS9000mountedon thestandardEVMwithV =5V,R =237Ω, thestandardEVMwithV =5V,R =237Ω, S (BIAS) S (BIAS) andL =470nH andL =68nH (COL) (COL) 10 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 Figure22showsanexampleofasingleconversionreceiverarchitectureandwheretheTHS9000wouldtypically beused. 900 MHz − 2 GHz 900 MHz − 2 GHz Image Rejection IF Amp 1 IF Amp 2 Filter LNA 1 LNA 2 Mixer IF SAW PGA IF SAW ADC LO Drive LO Drive RX LO Amp 1 Amp 2 THS9000 2x for Diversity Figure22. ExampleSingleConversionReceiverArchitecture Figure 23 shows an example of a dual conversion receiver architecture and where the THS9000 would typically beused. 900 MHz − 2 GHz 100 MHz − 300 MHz 20 MHz − 70 MHz Image Reject 1st IF Amp 2nd IF Amp1 LNA 1 LNA 2 Filter 1st Mixer 1st IF SAW PGA 2nd Mixer 2nd IF SAW2Anmdp I2F Alias Filter ADC LO1 Drive LO1 Drive RX LO 1 Amp 1 Amp 2 RX LO2 LOA2m Dpr i1veLOA2m Dpr i2ve THS9000 2x for Diversity Figure23. ExampleDualConversionReceiverArchitecture Figure 24 shows an example of a dual conversion transmitter architecture and where the THS9000 would typicallybeused. BB 100 MHz − 300 MHz 900 MHz − 2 GHz 1st IF amp DAC BB Amp Alias Filter 1st Mixer IF SAW PGA 2nd Mixer PA LO2 Drive LO2 Drive RX LO1 LO1 Drive LO1 Drive RX LO2 Amp 1 Amp 2 Amp 1 Amp 2 THS9000 2x for Diversity Figure24. ExampleDualConversionTransmitterArchitecture Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:THS9000

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com Figure 25 shows the THS9000 and Sawtek #854916 SAW filter frequency response along with the frequency responseoftheSAWfilteralone.TheSAWfilterhasacenterfrequencyof140MHzwith10-MHzbandwidthand 8-dB insertion loss. It can be seen that the frequency response with the THS9000 is the same as with the SAW except for a 15-dB gain. The THS9000 is mounted on the standard EVM with V = 5 V, R = 237 Ω, and S (BIAS) L =470nH.Notetheamplifierdoesnotaddartifactstothesignal. (COL) SAW + THS9000 THS9000 SAW RED = SAW SAW Only 140 MHz GREEN = 140 MHz SAW: Sawtek #854916 Figure25. FrequencyResponseoftheTHS9000andSAWFilter,andSAWFilterOnly VS C(BYP) L(COL) CO IF(OUT) 0.1 (cid:1)F 1 nF 6 5 4 THS9000 IF(IN) CI 1 2 3 R(BIAS) 1 nF VS Figure26. THS9000RecommendedCircuit(usedforalltests) 12 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 Evaluation Module Table1isthebillofmaterials,andFigure27andFigure28showtheEVMlayout. BillOfMaterials ITEM DESCRIPTION REFDES QTY PARTNUMBER(1) 1 Cap,0.1μF,ceramic,X7R,50V C1 1 (AVX)08055C104KAT2A 2 Cap,1000pF,ceramic,NPO,100V C2,C3 2 (AVX)08051A102JAT2A 3 Inductor,470nH,5% L1 1 (Coilcraft)0805CS-471XJBC 4 Resistor,237Ω,1/8W,1% R1 1 (Phycomp)9C08052A2370FKHFT 5 Open TR1 1 6 Jack,bananareceptance,0.25"dia. J3,J4 2 (SPC)813 7 Connector,edge,SMAPCBjack J1,J2 2 (Johnson)142-0701-801 8 Standoff,4-40Hex,0.625"Length 4 (KEYSTONE)1808 9 Screw,Phillips,4-40,.250" 4 SHR-0440-016-SN 10 IC,THS9000 U1 1 (TI)THS9000DRD 11 Board,printed-circuit 1 (TI)EDGE#6453521Rev.A (1) Themanufacturer'spartnumbersareusedfortestpurposesonly. Figure27. EVMTopLayout Figure28. EVMBottomLayout Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:THS9000

THS9000 SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 www.ti.com 0.110 (2,79) 0.050 (1,27) 0.025 (0,64) 0.010 (0,254) vias 0.080 0.140 0.028 (2,03) (3,56) (0,711) 0.032 (0,81) 0.011 (0,28) 0.015 (0,381) Figure29. THS9000RecommendedFootprintdimensionsareininches(millimeters) 14 SubmitDocumentationFeedback Copyright©2003–2013,TexasInstrumentsIncorporated ProductFolderLinks:THS9000

THS9000 www.ti.com SLOS425E–DECEMBER2003–REVISEDDECEMBER2013 REVISION HISTORY ChangesfromRevisionD(October2008)toRevisionE Page • ChangedthedatasheettitleFrom:50MHzto400MHzCASCADEABLEAMPLIFIERTo:50MHzto750MHz CASCADEABLEAMPLIFIER ............................................................................................................................................... 1 ChangesfromRevisionC(February2007)toRevisionD Page • RemovedtheDRDorderingoptionsfromtheAvailableOptionstable ................................................................................ 2 • FormattedtheAbsoluteMaximumRatingstabletocurrentstandards ................................................................................ 2 • DeletedDRDrowfromtheDissipationRatingtable............................................................................................................. 2 Copyright©2003–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:THS9000

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) THS9000DRWR ACTIVE VSON DRW 6 3000 Green (RoHS NIPDAUAG Level-2-260C-1 YEAR -40 to 85 BQX & no Sb/Br) THS9000DRWT ACTIVE VSON DRW 6 250 Green (RoHS NIPDAUAG Level-2-260C-1 YEAR -40 to 85 BQX & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2017 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) THS9000DRWR VSON DRW 6 3000 179.0 8.4 2.2 2.2 1.2 4.0 8.0 Q2 THS9000DRWT VSON DRW 6 250 179.0 8.4 2.2 2.2 1.2 4.0 8.0 Q2 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2017 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) THS9000DRWR VSON DRW 6 3000 195.0 200.0 45.0 THS9000DRWT VSON DRW 6 250 195.0 200.0 45.0 PackMaterials-Page2

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