TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Rev. 03 — 26 March 2007 Product data sheet 1. General description The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion MetalOxideSemiconductor(DMOS)process.Thecircuitisahighvoltagecontrollerfora zero-voltage switching resonant converter. TheIC provides the drive function for twodiscrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier. Toguaranteeanaccurate50%switchingdutyfactor,theoscillatorsignalpassesthrough a divide-by-two flip-flop before being fed to the output drivers. The circuit is very flexible and enables a broad range of applications for different mains voltages. VHS VDD bridge voltage supply (high side) MOSFET SWITCH TEA1610 HALF- RESONANT BRIDGE CONVERTER CIRCUIT mgu336 signal ground power ground Fig 1. Basic configuration 2. Features n Integrated high voltage level-shift n Transconductance error amplifier for function ultra high-ohmic regulation feedback n Integrated high voltage bootstrap diode n Latched shut-down circuit for overcurrent and overvoltage protection n Low start-up current (green function) n Adjustable minimum and maximum frequencies n Adjustable dead time n Undervoltage lockout

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 3. Applications n TV and monitor power supplies n High voltage power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V high side driver voltage 0 - 600 V HS I high side output source V = 13 V; - 135 - 180 - 225 mA GH(source) DD(F) current V = 0V; SH V = 0V GH I low side output source V = 0V - 135 - 180 - 225 mA GL(source) GL current I high side output sink V = 13 V; - 300 - mA GH(sink) DD(F) current V = 0V; SH V = 13V GH I low side output sink current V = 14V - 300 - mA GL(sink) GL f maximum bridge frequency C = 100pF; [1] 450 500 550 kHz bridge(max) F I = 1mA; IFS I = 200m A; IRS f OSC f =------------- bridge 2 V common mode input [2] - - 2.5 V I(CM) voltage [1] The frequency of the oscillator depends on the value of capacitor C, the peak-to-peak voltage swing V , f CF and the charge/discharge currents I and I . CF(ch) CF(dis) [2] This parameter applies specifically to the error amplifier. 5. Ordering information Table 2. Ordering information Type number Package Name Description Version TEA1610P DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 TEA1610T SO16 plastic small outline package; 16 leads; body width 3.9mm; SOT109-2 low stand-off height TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 2 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 6. Block diagram VDD 11 8 VDD(F) BOOTSTRAP SUPPLY LEVEL HIGH SIDE 7 GH SHIFTER DRIVER TEA1610 6 SH reset LOW SIDE 10 GL DRIVER 4 PGND start/stop oscillation LOGIC 15 shut-down SD 9 start-up SGND 2.33 V ÷2 I+ 2 · 2 Icharge gm 1 I- ERROR OSCILLATOR AMPLIFIER 2.5 V 3 V Idischarge 0.6 V 5 3 14 16 12 13 mgu337 n.c. VCO IRS VREF IFS CF Fig 2. Block diagram TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 3 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 7. Pinning information 7.1 Pinning I- 1 16 VREF I- 1 16 VREF I+ 2 15 SD I+ 2 15 SD VCO 3 14 IRS VCO 3 14 IRS PGND 4 13 CF PGND 4 13 CF TEA1610P TEA1610T n.c. 5 12 IFS n.c. 5 12 IFS SH 6 11 VDD SH 6 11 VDD GH 7 10 GL GH 7 10 GL VDD(F) 8 9 SGND VDD(F) 8 9 SGND 001aaf866 001aaf867 Fig 3. Pin configuration for TEA1610P Fig 4. Pin configuration for TEA1610T 7.2 Pin description Table 3. Pin description Symbol Pin Description I- 1 error amplifier inverting input I+ 2 error amplifier non-inverting input VCO 3 error amplifier output PGND 4 power ground n.c. 5 not connected (high voltage spacer) SH 6 high side switch source GH 7 gate of the high side switch V 8 floating supply voltage for the high side driver DD(F) SGND 9 signal ground GL 10 gate of the low side switch V 11 supply voltage DD IFS 12 oscillator discharge current input CF 13 oscillator capacitor IRS 14 oscillator charge current input SD 15 shut-down input V 16 reference voltage REF TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 4 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 8. Functional description 8.1 Start-up When the applied voltage at V reaches V (seeFigure5), the low side power DD DD(initial) switch is turned-on while the high side power switch remains in the non-conducting state. Thisstart-upoutputstateguaranteestheinitialchargingofthebootstrapcapacitor(C ) boot used for the floating supply of the high side driver. During start-up, the voltage on the frequency capacitor (C) is zero and defines the f start-up state. The output voltage of the error amplifier is kept constant (typ.2.5V) and switchingstartsatabout80%ofthemaximumfrequencyatthemomentpinV reaches DD the start level. Thestart-upstateismaintaineduntilV reachesthestartlevel(13.5V),theoscillatoris DD activated and the converter starts operating. VDD(start) VDD VDD(initial) 0 GH-SH 0 GL 0 t mgt998 Fig 5. Start-up TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 5 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 8.2 Oscillator The internal oscillator is a current-controlled oscillator that generates a sawtooth output. ThefrequencyofthesawtoothisdeterminedbytheexternalcapacitorC andthecurrents f flowing into the IFS and IRSpins. TheminimumfrequencyandthedeadtimearesetbythecapacitorC andresistorsR f f(min) and Rdt. The maximum frequency is set by resistor RD f (seeFigure10). The oscillator frequency is exactly twice the bridge frequency to achieve an accurate 50% duty factor. An overview of the oscillator and driver signals is given inFigure6. CF GH-SH 0 GL 0 dead time (high to low) dead time (low to high) t mgt999 Fig 6. Oscillator and driver signals 8.3 Dead time resistor ThedeadtimeresistorR isconnectedbetweenthe3Vreferencepin(V )andtheIFS dt REF current input pin (seeFigure10). The voltage on the IFSpin is kept constant at a temperature independent value of 0.6V. The current that flows into the IFSpin is determinedbythevalueofresistorR andthe2.4Vvoltagedropacrossthisresistor.The dt IFS input current equals the discharge current of capacitorC and determines the falling f slope of the oscillator. Thefallingslopetimeisusedtocreateadeadtime(t )betweentwosuccessiveswitching dt actions of the half-bridge switches: 2.4V I = ----------- IFS R dt C · D V t = ------f----------------C----f dt I IFS t = t IFS dt TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 6 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 8.4 Minimum frequency resistor TheR resistorisconnectedbetweentheV pin(3Vreferencevoltage)andtheIRS f(min) REF current input (held at a temperature independent voltage level of 0.6V). The charge current of the capacitorC is twice the current flowing into the IRSpin. f The R resistor has a voltage drop of 2.4V and its resistance defines the minimum f(min) chargecurrent(risingslope)oftheC capacitorifthecontrolcurrentiszero.Theminimum f frequency is defined by this minimum charge current (I ) and the discharge current: IRS1 2.4V I = ----------------- IRS1 R f(min) C · D V t = ------f----------------C----f IRS1 2· I IRS1 1 fosc(min) = t--------+-----t----------- dt IRS1 f fbridge(min) = ----o---s--c-2-(--m----i-n---) 8.5 Maximum frequency resistor The output voltage is regulated by changing the frequency of the half-bridge converter. The maximum frequency is determined by the RD f resistor which is connected between the error amplifier output VCO and the oscillator current inputpinIRS. The current that flows through the RD f resistor (IIRS2) is added to the current flowing through the Rf(min) resistor. As a result, the charge currentI increases and the oscillation frequency CF increases. As the falling slope of the oscillator is constant, the relationship between the output frequency and the charge current is not a linear function (seeFigure7 and Figure9): V –0.6 I = -----V---C---O---------------- IRS2 R D f C · D V t = ---------------f----------------C----f---------- IRS2 2· (I +I ) IRS1 IRS2 The maximum output voltage of the error amplifier and the value of RD f determine the maximum frequency: V –0.6 IIRS2(max) = -----V---C---O----(-R-m---a---x--)-------------- D f C · D V tIRS(min) = 2-----·-----(--I---------f-----+-----I-------C---f----------------) IRS2 IRS2(max) 1 fosc(max) = T------------- OSC TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 7 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller f fbridge(max) = ----o---s--c-2-(--m----a--x---) T = t +t OSC IRS(min) IFS Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies both the dead time and the oscillator frequency show a decay. The frequency of the oscillator depends on the value of capacitorC, the peak-to-peak f voltageswingV andthechargeanddischargecurrents.However,athigherfrequencies Cf the accuracy decreases due to delays in the circuit. fosc fosc(max) fosc(start) fosc(min) 0 IIRS mgw001 Fig 7. Frequency range 8.6 Error amplifier Theerroramplifierisatransconductanceamplifier.ThustheoutputcurrentatpinVCOis determined by the amplifier transconductance and the differential voltage on input pinsI+andI-. The output current I is fed to the IRS input of the current-controlled VCO oscillator. The source capability of the error amplifier increases current in the IRSpin when the differential input voltage is positive. Therefore the minimum current is determined by resistorR andtheminimumfrequencysettingisindependentofthecharacteristicsof f(min) the error amplifier. The error amplifier has a maximum output current of 0.5mA for an output voltage up to 2.5V.Ifthesourcecurrentdecreases,theoscillatorfrequencyalsodecreasesresultingin a higher regulated output voltage. Duringstart-up,theoutputvoltageoftheamplifierisheldataconstantvalueof2.5V.This voltage level defines, together with resistorRD f, the initial switching frequency of the TEA1610 after start-up. 8.7 Shut-down Theshut-downinput(SD)hasanaccuratethresholdlevelof2.33V.Whenthevoltageon inputSD reaches 2.33V, both power switches immediately switch off and the TEA1610 enters shut-down mode. TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 8 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller During shut-down mode, pinV is clamped by an internal Zener diode at 12.0V with DD 1mA input current. This clamp prevents V rising above the rating of 14V due to low DD supply current to the TEA1610 in shut-down mode. When the TEA1610 is in the shut-down mode, it can be activated again only by lowering V below the V level (typically 5.3V). The shut-down latch is then reset and a DD DD(reset) new start-up cycle can commence (seeFigure8). oscillation shut- supply start-up oscillation down off VDD(start) VDD(sdc) VDD VDD(reset) VSD(th) SD GH-SH 0 GL 0 t mgw002 Fig 8. Shut-down TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 9 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Voltages V high side driver voltage 0 600 V HS V supply voltage [1] 0 15 V DD V amplifier non-inverting input 0 5 V I+ voltage V amplifier inverting input voltage 0 5 V I- V shut-down input voltage 0 5 V SD Currents I oscillator falling slope input - 1 mA IFS current I oscillator rising slope input - 1 mA IRS current I V source current - - 2 mA REF REF Power and temperature P total power dissipation T < 70(cid:176) C - 0.8 W tot amb T ambient temperature operating - 25 +70 (cid:176) C amb T storage temperature - 25 +150 (cid:176) C stg Handling V electrostatic discharge voltage [2] - 2000 V ESD [3] - 200 V [1] It is recommended that a 100nF capacitor be placed as close as possible to the V pin (as indicated in DD Figure10, and in the application note). [2] Human body model class 2: equivalent to discharging a 100pF capacitor through a 1.5kW series resistor. [3] Machine model class 2: equivalent to discharging a 200pF capacitor through a 0.75m H coil and 10W resistor. 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction in free air 100 K/W th(j-a) to ambient R thermal resistance from junction 50 K/W th(j-pin) to pin TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 10 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 11. Characteristics Table 6. Characteristics Allvoltagesarereferredtothegroundpinswhichmustbeconnectedexternally;positivecurrentsflowintotheIC;V =13V DD and T =25(cid:176) C; tested using the circuit shown inFigure10, unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit High voltage pins V , GH and SH DD(F) I leakage current V , V and V =600V - - 30 m A L DD(F) GH SH Supply pin V DD V supply voltage for low side on; high side off - 4 5 V DD(initial) defined driver output V start oscillator voltage 12.9 13.4 13.9 V DD(start) V stop oscillator voltage 9.0 9.4 9.8 V DD(stop) V start-stop hysteresis 3.8 4.0 4.2 V DD(hys) voltage V shut-down clamp low side off; high side off; 11.0 12.0 13.0 V DD(sdc) voltage I = 1mA DD V reset voltage 4.5 5.3 6.0 V DD(reset) I supply current: low side on; high side off [1] DD C = 100pF; I = 0.5mA; f IFS I = 50m A; C = 200pF IRS o low side off; high side off; V = 9V DD start-up 130 180 220 m A operating - 2.4 - mA shut-down - 130 180 m A Reference voltage on pin V REF V reference voltage I = 0mA 2.9 3.0 3.1 V REF REF I current capability source only - 1.0 - - mA REF Z output impedance I =- 1mA - 5.0 - W o(VREF) REF D V temperature IREF = 0mA; Tj = 25 to 150(cid:176) C - - 0.3 - mV/K REF ----------------- coefficient D T Current controlled oscillator pins IRS, IFS, CF I minimum CF charge I = 15m A; V = 2V 28 30 32 m A CF(ch)(min) IRS CF current I maximum CF charge I = 200m A; V = 2V 340 380 420 m A CF(ch)(max) IRS CF current V voltage on pin IRS I = 200m A 570 600 630 mV IRS IRS I minimum CF I = 50m A; V = 2V 47 50 53 m A CF(dis)(min) IRS CF discharge current I maximum CF I = 1mA; V = 2V 0.93 0.98 1.03 mA CF(dis)(max) IFS CF discharge current V voltage on pin IFS I = 1mA 570 600 630 mV IFS IFS f minimum bridge C = 100pF; I = 0.5mA; 188 200 212 kHz bridge(min) F IFS frequency (for stable f operation) I = 50m A; f =----O----S---C-- IRS bridge 2 TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 11 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller Table 6. Characteristics …continued Allvoltagesarereferredtothegroundpinswhichmustbeconnectedexternally;positivecurrentsflowintotheIC;V =13V DD and T =25(cid:176) C; tested using the circuit shown inFigure10, unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit f maximum bridge C = 100pF; I = 1mA; [2] 450 500 550 kHz bridge(max) F IFS frequency f I = 200m A; f =----O----S---C-- IRS bridge 2 V CF trip level LOW DC level - 1.27 - V CF(L) V CF trip level HIGH DC level - 3.0 - V CF(H) V C voltage 1.63 1.73 1.83 V Cf(p-p) f (peak-to-peak value) t dead time C = 100 pF; I = 0.5 mA; 0.37 0.40 0.43 m s dt f IFS I = 50m A IRS Output drivers I high side output V = 13 V; V = 0V; - 135 - 180 - 225 mA GH(source) DD(F) SH source current V = 0V GH I high side output sink V = 13 V; V = 0V; - 300 - mA GH(sink) DD(F) SH current V = 13V GH I low side output V = 0V - 135 - 180 - 225 mA GL(source) GL source current I low side output sink V = 14V - 300 - mA GL(sink) GL current V high side output V = 13 V; V = 0 V; 10.8 12 - V GH(H) DD(F) SH voltage HIGH I = 10 mA GH V high side output V = 13 V; V = 0 V; - 0.2 0.5 V GH(L) DD(F) SH voltage LOW I = 10 mA GH V low side output I = 10 mA 10.8 12 - V GL(H) GL voltage HIGH V low side output I = 10 mA - 0.2 0.5 V GL(L) GL voltage LOW V bootstrap diode I = 5 mA 1.5 1.8 2.1 V d(boot) voltage drop Shut-down input pin SD I input current V = 2.33 V 0 0.2 0.5 m A SD SD V threshold level 2.26 2.33 2.40 V SD(th) Error amplifier pins I+, I-, VCO I common mode input V = 1 V - - 0.1 - 0.5 m A I(CM) I(CM) current V common mode input - - 2.5 V I(CM) voltage V input offset voltage V = 1 V; I =- 10 mA - 2 0 +2 mV I(offset) I(CM) VCO g transconductance V = 1 V; source only - 330 - m A/mV m I(CM) A open loop gain V = 1 V [3] - 70 - dB o I(CM) GB gain bandwidth V = 1 V [3] - 5 - MHz I(CM) product TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 12 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller Table 6. Characteristics …continued Allvoltagesarereferredtothegroundpinswhichmustbeconnectedexternally;positivecurrentsflowintotheIC;V =13V DD and T =25(cid:176) C; tested using the circuit shown inFigure10, unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V maximum VCO operating [3] 3.2 3.6 4.0 V VCO(max) voltage I maximum output operating; V = 1 V - 0.4 - 0.5 - 0.6 mA VCO(max) VCO current V start VCO voltage I = 0.3 mA 2.3 2.5 2.7 V VCO(start) VCO [1] The supply current I increases with increasing bridge frequency to drive the capacitive load of two MOSFETs. Typical MOSFETs for DD the TEA1610 application are 8N50 (NXP type PHX80N50E, Q = 55 nC typ.) and these will increase the supply current at 150kHz g(tot) according to the following formula: D IDD = 2· Qg(tot)· fbridge = 2· 55nC· 150kHz = 16.5mA [2] The frequency of the oscillator depends on the value of capacitor C, the peak-to-peak voltage swing V , and the charge/discharge f CF currents I and I . CF(ch) CF(dis) [3] This parameter is tested with a resistor of 10 kW connected from pin VCO to GND. TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 13 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 12. Application information An application example of a zero-voltage switching resonant converter application using TEA1610 is shown inFigure10. In the off-mode the V voltage is pulled below the stop DD level of 9.4V by the 7.5V Zener diode and the half-bridge is not driven. In the on-mode the TEA1610 starts-up with a high-ohmic bleeder resistor. After passing the level for start ofoscillation,theTEA1610isinnormaloperatingmodeandconsumesthenormalsupply current delivered by the 12V supply. The dead time is set by R andC. The minimum dt f frequency is adjusted by Rf(min) and the frequency range is set by RD f. The output voltage isadjustedwithapotentiometerconnectedtotheinvertinginputoftheerroramplifierand isregulatedviaafeedbackcircuit.Theshut-downinputisusedforovervoltageprotection. To prevent interference, filter capacitors can be added on pinsIFS, IRS and V . The REF maximum value of each filter capacitor is 100pF. Practical values of the application example are given inFigure9, in which the measured oscillator frequency with capacitorC =220pF is shown as a function of the charge f current I . Note that the slope of the measured frequency differs from the theoretical IRS frequency (frequency set) calculated as described inSection 8.5 “Maximum frequency resistor”. Themeasureddeadtimeisdirectlyrelatedtothechargecurrent(totalcurrentflowinginto pin IRS) and therefore to the oscillator frequency. The measured frequency graph can be used to determine the required RD f resistor for a certain maximum frequency in an application with the same value of capacitorC. f More application information can be found in application noteAN99011. mgw003 800 1200 fosc dead time (low to high) tdt (kHz) (ns) dead time (high to low) 600 900 400 600 frequency set frequency measured 200 300 0 0 0 40 80 120 160 200 IIRS (m A) (1) f at I = 500 mA. OSC IFS (2) f = 2 x f . OSC bridge Fig 9. Oscillator frequency and measured dead time as functions of charge current I IRS TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 14 of 21

xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x P T N roduct d EA1610T_P_3 bridge voltage supply (high side) XP S a 12 V e ta m sh RVDD ic e et output voltage on d u 7.5 V CVDD c t VDD o r s 11 8 VDD(F) on/off bootstrap diode LEVEL HIGH SIDE 7 GH SHIFTER DRIVER Lp TEA1610 6 SH Cboot Lr(ext) R e LOW SIDE 10 GL v. 0 DRIVER Cp Cr 3 — 4 PGND 2 SUPPLY LOGIC 6 Z M 15 SD power ground e arch sgirgonuanld SGND 9 ro-v 2 overvoltage protection o 007 ÷2 2.33 V ltag T regulator e E feedback I+ 2 SGND mgu339 -s w A I- 1 gm OSCILLATOR itch 1 3 V in 6 ERROR g AMPLIFIER 0.6 V r 1 3 14 16 12 13 e 0 s VCO IRS VREF IFS CF on P Cf ant ; RD f Rf(min) Rdt c T © CSS on E N v XP e A B r 15 of 21 .V. 2007. All rights reserved. Fig 10. Application diagram ter controller 1610T

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 13. Test information 13.1 Quality information The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable. TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 16 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 14. Package outline DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 D ME e n a pl g n eati A2 A s A1 L c Z e w M b1 (e ) 1 b 16 9 MH pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mAax. mAi n1 . mAa 2x . b b1 c D(1) E(1) e e1 L ME MH w mZax(1.) 1.40 0.53 0.32 21.8 6.48 3.9 8.25 9.5 mm 4.7 0.51 3.7 2.54 7.62 0.254 2.2 1.14 0.38 0.23 21.4 6.20 3.4 7.80 8.3 0.055 0.021 0.013 0.86 0.26 0.15 0.32 0.37 inches 0.19 0.02 0.15 0.1 0.3 0.01 0.087 0.045 0.015 0.009 0.84 0.24 0.13 0.31 0.33 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 99-12-27 SOT38-1 050G09 MO-001 SC-503-16 03-02-13 Fig 11. Package outline SOT38-1 (DIP16) TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 17 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height SOT109-2 D E A X c y HE v M A Z 16 9 Q A2 A1 (A 3 ) A pin 1 index q Lp 1 8 L e w M detail X bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mAax. A1 A2 A3 bp c D(1) E(1) e HE L Lp Q v w y Z(1) q 0.20 1.45 0.49 0.25 10.0 4.0 6.2 1.0 0.7 0.7 mm 1.65 0.25 1.27 1.05 0.25 0.25 0.1 0.05 1.25 0.36 0.19 9.8 3.8 5.8 0.4 0.6 0.3 8o 0.008 0.057 0.019 0.0100 0.39 0.16 0.244 0.039 0.028 0.028 0o inches 0.065 0.01 0.05 0.041 0.01 0.01 0.004 0.002 0.049 0.014 0.0075 0.38 0.15 0.228 0.016 0.024 0.012 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 99-12-27 SOT109-2 076E07 MS-012 03-02-19 Fig 12. Package outline SOT109-2 (SO16) TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 18 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 15. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes TEA1610T_P_3 20070326 Product data sheet - TEA1610T_P_2 Modifications: • InTable 4 “Limiting values”, maximum value for V changed from 14 V to 15 V. DD TEA1610T_P_2 20070206 Product data sheet - TEA1610T_P_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • EquationsmodifiedinSection8.4“Minimumfrequencyresistor”andSection8.5“Maximum frequency resistor”. TEA1610T_P_1 20010425 Product specification - - TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 19 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 16.2 Definitions malfunctionofaNXPSemiconductorsproductcanreasonablybeexpectedto result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Draft —The document is a draft version only. The content is still under Semiconductors products in such equipment or applications and therefore internal review and subject to formal approval, which may result in such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold 16.3 Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. 16.4 Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or 17. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com TEA1610T_P_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 26 March 2007 20 of 21

TEA1610P; TEA1610T NXP Semiconductors Zero-voltage-switching resonant converter controller 18. Contents 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Functional description . . . . . . . . . . . . . . . . . . . 5 8.1 Start-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.2 Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.3 Dead time resistor. . . . . . . . . . . . . . . . . . . . . . . 6 8.4 Minimum frequency resistor . . . . . . . . . . . . . . . 7 8.5 Maximum frequency resistor. . . . . . . . . . . . . . . 7 8.6 Error amplifier. . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.7 Shut-down. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Thermal characteristics. . . . . . . . . . . . . . . . . . 10 11 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Application information. . . . . . . . . . . . . . . . . . 14 13 Test information. . . . . . . . . . . . . . . . . . . . . . . . 16 13.1 Quality information . . . . . . . . . . . . . . . . . . . . . 16 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20 16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 17 Contact information. . . . . . . . . . . . . . . . . . . . . 20 18 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 March 2007 Document identifier: TEA1610T_P_3