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TC7660HEOA产品简介:
ICGOO电子元器件商城为您提供TC7660HEOA由Microchip设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TC7660HEOA价格参考。MicrochipTC7660HEOA封装/规格:PMIC - 稳压器 - DC DC 开关稳压器, 固定 充电泵 开关稳压器 IC 正或负 -Vin,2Vin 1 输出 20mA 8-SOIC(0.154",3.90mm 宽)。您可以下载TC7660HEOA参考资料、Datasheet数据手册功能说明书,资料中有TC7660HEOA 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC REG SWITCHD CAP INV ADJ 8SOIC稳压器—开关式稳压器 High Frequency |
产品分类 | |
品牌 | Microchip Technology |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 电源管理 IC,稳压器—开关式稳压器,Microchip Technology TC7660HEOA- |
数据手册 | 点击此处下载产品Datasheethttp://www.microchip.com/mymicrochip/filehandler.aspx?ddocname=en011343http://www.microchip.com/mymicrochip/filehandler.aspx?ddocname=en023833 |
产品型号 | TC7660HEOA |
PCN组件/产地 | http://www.microchip.com/mymicrochip/NotificationDetails.aspx?id=5774&print=view |
PCN设计/规格 | http://www.microchip.com/mymicrochip/NotificationDetails.aspx?id=5704&print=view |
PWM类型 | - |
产品目录页面 | |
产品种类 | 稳压器—开关式稳压器 |
供应商器件封装 | 8-SOIC N |
包装 | 管件 |
同步整流器 | 无 |
商标 | Microchip Technology |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
宽度 | 3.99 mm |
封装 | Tube |
封装/外壳 | 8-SOIC(0.154",3.90mm 宽) |
封装/箱体 | SOIC-8 Narrow |
工作温度 | -40°C ~ 85°C |
工厂包装数量 | 100 |
开关频率 | 120 kHz |
最大工作温度 | + 70 C |
最大输入电压 | 10 V |
最小工作温度 | 0 C |
标准包装 | 100 |
电压-输入 | 1.5 V ~ 10 V |
电压-输出 | -1.5 V ~ -10 V |
电流-输出 | 20mA |
类型 | Buck |
输入电压 | 1.5 V to 10 V |
输出数 | 1 |
输出电压 | - 1.5 V to - 10 V |
输出电流 | 20 mA |
输出类型 | 可调式 |
频率-开关 | 120kHz |
EVALUATION KIT AVAILABLE TC7660H HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION (cid:1) Pin Compatible with 7660, High Frequency The TC7660H is a pin-compatible, high frequency up- Performance DC-to-DC Converter grade to the Industry standard TC7660 charge pump volt- (cid:1) Low Cost, Two Low Value External Capacitors age converter. It converts a +1.5V to +10V input to a Required........................................................ (1.0µF) corresponding – 1.5V to – 10V output using only two low- (cid:1) Converts +5V Logic Supply to ±5V System cost capacitors, eliminating inductors and their associated (cid:1) Wide Input Voltage Range ....................1.5V to 10V cost, size and EMI. (cid:1) Voltage Conversion........................................99.7% The TC7660H operates at a frequency of 120kHz (cid:1) Power Efficiency................................................85% (versus 10kHz for the TC7660), allowing the use of 1.0µF (cid:1) Available in 8-Pin SOIC and 8-Pin PDIP Packages external capacitors. Oscillator frequency can be reduced (for lower supply current applications) by connecting an external capacitor from OSC to ground. The TC7660H is available in 8-pin DIP and small PIN CONFIGURATION (DIP and SOIC) outline (SOIC) packages in commercial and extended temperature ranges. NC 1 8 V+ CAP+ 2 7 OSC ORDERING INFORMATION GND 3 TC7660HCPA 6 LOW Temperature TC7660HEPA VOLTAGE (LV) Part No. Package Range CAP– 4 5 VOUT TC7660HCOA 8-Pin SOIC 0°C to +70°C TC7660HCPA 8-Pin Plastic DIP 0°C to +70°C NC 1 8 V+ TC7660HEOA 8-Pin SOIC – 40°C to +85°C CAP+ 2 7 OSC TC7660HEPA 8-Pin Plastic DIP – 40°C to +85°C GND 3 TC7660HCOA 6 LOW TC7660EV Evaluation Kit for TC7660HEOA VOLTAGE (LV) CAP– 4 5 VOUT Charge Pump Family NC = NO INTERNAL CONNECTION FUNCTIONAL BLOCK DIAGRAM V+ CAP+ 8 2 OSC 7 OSCILRLCATOR ÷ 2 VOLLETVAEGLE– 4 CAP– TRANSLATOR 6 LV 5 VOUT INTERNAL VOLTAGE REGULATOR LOGIC NETWORK TC7660H 3 GND © 2001 Microchip Technology Inc. DS21466A TC7660H-2 10/1/96
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H ABSOLUTE MAXIMUM RATINGS* Operating Temperature Range C Suffix..................................................0°C to +70°C Supply Voltage...................................................... +10.5V E Suffix ............................................– 40°C to +85°C LV and OSC Inputs Storage Temperature Range ...............– 65°C to +150°C Voltage (Note 1) ........................– 0.3V to (V+ + 0.3V) Lead Temperature (Soldering, 10 sec) .................+300°C for V+ < 5.5V (V+ – 5.5V) to (V+ + 0.3V) *Static-sensitive device. Unused devices must be stored in conductive for V+ > 5.5V material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- Current Into LV (Note 1).....................20µA for V+ > 3.5V nent damage to the device. These are stress ratings only and functional Output Short Duration (VSUPPLY ≤ 5.5V) .........Continuous operation of the device at these or any other conditions above those Power Dissipation (T ≤ 70°C) (Note 2) indicated in the operation sections of the specifications is not implied. A SOIC...............................................................470mW Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Plastic DIP......................................................730mW ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with V+= 5V, C = C = 1µF, C = 0, I 2 OSC Test Circuit (Figure 1), unless otherwise indicated. Symbol Parameter Test Conditions Min Typ Max Unit I+ Supply Current R = ∞ — 0.46 1.0 mA L V+ Supply Voltage Range, High Min ≤ T ≤ Max, 3 — 10 V H A R = 5kΩ, LV Open L V+ Supply Voltage Range, Low Min ≤ T ≤ Max, 1.5 — 3.5 V L A R = 5kΩ, LV to GND L R Output Source Resistance I = 20mA, T = 25°C — 55 80 Ω OUT OUT A I = 20mA, 0°C ≤ T ≤ +70°C — — 95 Ω OUT A (C Device) I = 20mA, – 40°C ≤ T ≤ +85°C — — 110 Ω OUT A (E Device) V+ = 2V, I = 3mA, LV to GND — 150 250 Ω OUT 0°C ≤ T ≤ +70°C A F Oscillator Frequency — 120 — kHz OSC P Power Efficiency I = 10mA, Min ≤ T ≤ Max 81 85 — % EFF OUT A ∞ V Voltage Efficiency R = 99 99.7 — % EFF L NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to "power up" of the TC7660H. 2. Derate linearly above 50°C by 5.5mW/°C. TC7660H-2 10/1/96 2 © 2001 Microchip Technology Inc. DS21466A
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H To improve low-voltage operation, the LV pin should be connected to GND. For supply voltages greater than 3.5V, the LV terminal must be left open to ensure latch-up- IS proof operation and prevent device damage. 1 8 V+ 2 7 (+5V) Theoretical Power Efficiency Considerations C1 + 3 TC7660H 6 In theory, a capacitative charge pump can approach 1.0 µF 100% efficiency if certain conditions are met: 4 5 (1) The drive circuitry consumes minimal power. (2) The output switches have extremely low ON resistance and virtually no offset. C2 (3) The impedances of the pump and reservoir + 1.0 µF RL capacitors are negligible at the pump frequency. The TC7660H approaches these conditions for nega- tive voltage multiplication if large values of C and C are 1 2 Figure 1. TC7660H Test Circuit used. Energy is lost only in the transfer of charge between capacitors if a change in voltage occurs. The Detailed Description energy lost is defined by: The TC7660H contains all the necessary circuitry to E = 1/2 C (V 2 – V 2) 1 1 2 implement a voltage inverter, with the exception of two external capacitors, which may be inexpensive 1.0µF V and V are the voltages on C during the pump and 1 2 1 non-polarized capacitors. Operation is best understood by transfer cycles. If the impedances of C and C are relatively 1 2 considering Figure 2, which shows an idealized voltage high at the pump frequency (refer to Figure 1), compared to inverter. Capacitor C1 is charged to a voltage, V+, for the half the value of RL, there will be a substantial difference in cycle when switches S1 and S3 are closed. (Note: Switches voltages V1 and V2. Therefore, it is not only desirable to S2 and S4 are open during this half cycle.) During the second make C2 as large as possible to eliminate output voltage half cycle of operation, switches S2 and S4 are closed, with ripple, but also to employ a correspondingly large value for S1 and S3 open, thereby shifting capacitor C1 negatively by C1 in order to achieve maximum efficiency of operation. V+ volts. Charge is then transferred from C to C , such that 1 2 the voltage on C is exactly V+, assuming ideal switches and Do's and Don'ts 2 no load on C . 2 • Do not exceed maximum supply voltages. • Do not connect LV terminal to GND for supply voltages greater than 3.5V. S1 S2 V+ • Do not short circuit the output to V+ supply for voltages above 5.5V for extended periods; however, transient conditions including start-up are okay. • When using polarized capacitors in the inverting mode, GND S3 S4 C2 the + terminal of C1 must be connected to pin 2 of the VOUT TC7660H and the + terminal of C2 must be connected = – VIN to GND Pin 3. Figure 2. Idealized Charge Pump Inverter © 2001 Microchip Technology Inc. DS21466A 3 TC7660H-2 10/1/96
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H Simple Negative Voltage Converter + V Figure 3 shows typical connections to provide a nega- 1 8 tive supply where a positive supply is available. A similar sthceh eompeer amtianyg braen egme polof +ye1d.5 fVo rt os u+p1p0lyV ,v koelteapgiensg a inn ymwinhde rteh aint 1.0 CµF1 + 23 TC7660H 76 + C1.20V µOFUT* pin 6 (LV) is tied to the supply negative (GND) only for supply 4 5 voltages below 3.5V. The output characteristics of the circuit in Figure 3 are those of a nearly ideal voltage source in series with 70Ω. *NOTES: 1. VOUT= –n V+for 1.5V V+ 10V Thus, for a load current of – 10 mA and a supply voltage of Figure 3. Simple Negative Converter +5V, the output voltage would be – 4.3V. The dynamic output impedance of the TC7660H is due, Paralleling Devices primarily, to capacitive reactance of the charge transfer capacitor (C ). Since this capacitor is connected to the Any number of TC7660H voltage converters may be 1 output for only 1/2 of the cycle, the equation is: paralleled to reduce output resistance (Figure 4). The reser- 2 voir capacitor, C2, serves all devices, while each device X = = 2.12Ω, requires its own pump capacitor, C . The resultant output C 2πf C 1 1 resistance would be approximately: where f = 150kHz and C = 1.0µF. 1 R (of TC7660H) OUT R = OUT n (number of devices) + V 1 8 2 7 1 8 + TC7660H 1.0 µF 3 6 2 7 + TC7660H 4 "1" 5 1.0 µF 3 6 4 "n" 5 VOUT* 1.0 µF + *NOTES: + + 1. VOUT = –n V for 1.5V V 10V Figure 4. Increased Output Voltage by Cascading Devices Cascading Devices Changing the TC7660H Oscillator Frequency The TC7660H may be cascaded as shown in (Figure 4) It may be desirable in some applications (due to noise or to produce larger negative multiplication of the initial supply other considerations) to increase or decease the oscillator voltage. However, due to the finite efficiency of each device, frequency. This can be achieved by overdriving the oscilla- the practical limit is probably 10 devices for light loads. The tor from an external clock, as shown in Figure 6. In order to output voltage is defined by: prevent possible device latch-up, a 1kΩ resistor must be used in series with the clock output. In a situation where the VOUT = – n (VIN) designer has generated the external clock frequency using TTL logic, the addition of a 10kΩ pull-up resistor to V+ supply where n is an integer representing the number of devices is required. Note that the pump frequency with external cascaded. The resulting output resistance would be ap- clocking, as with internal clocking, will be 1/2 of the clock proximately the weighted sum of the individual TC7660H frequency. Output transitions occur on the positive-going ROUT values. edge of the clock. TC7660H-2 10/1/96 4 © 2001 Microchip Technology Inc. DS21466A
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H + V 1 8 2 7 1 8 TC7660H C1 3 6 2 7 RL TC7660H 4 "1" 5 C 3 6 1 4 "n" 5 R L C 2 + Figure 5. Paralleling Devices Lowers Output Impedance Combined Negative Voltage Conversion V+ V+ and Positive Supply Multiplication 1 8 1 kΩ CMOS Figure 8 combines the functions shown in Figures 3 and 2 7 GATE 8 to provide negative voltage conversion and positive volt- + 1.0 µF 3 TC7660H 6 age multiplication simultaneously. This approach would be, for example, suitable for generating +9V and –5V from an 4 5 VOUT existing +5V supply. In this instance, capacitors C and C 1.0 µF 1 3 + perform the pump and reservoir functions, respectively, for the generation of the negative voltage, while capacitors C 2 Figure 6. External Clocking and C4 are pump and reservoir, respectively, for the multi- plied positive voltage. There is a penalty in this configuration Positive Voltage Multiplication which combines both functions, however, in that the source impedances of the generated supplies will be somewhat The TC7660H may be employed to achieve positive higher due to the finite impedance of the common charge voltage multiplication using the circuit shown in Figure 7. In pump driver at pin 2 of the device. this application, the pump inverter switches of the TC7660H are used to charge C to a voltage level of V+ – V (where V+ 1 F is the supply voltage and V is the forward voltage drop of F diode D ). On the transfer cycle, the voltage on C plus the 1 1 supply voltage (V+) is applied through diode D to capacitor C2. The voltage thus created on C2 becomes (22 V+) – (2 VF), V+ VOUT = or twice the supply voltage minus the combined forward –(V+–VF) 1 8 voltage drops of diodes D and D . 1 2 on thTeh eo ustopuurtc ceu irmrepnetd, bauntc feo or fV t+h e= o5uVtp auntd ( VaOnU oTu) twpiullt dceuprreenndt 2 7 D1 + C3 of 10mA, it will be approximately 60Ω. 3 TC7660H 6 V+ +C1 4 5 D2 V(2O VU+T) =– (2 VF) + 1 8 C2 + 2 7 D1 VOUT = C4 3 TC7660H 6 D2 (2 V+) – (2 VF) 4 5 + + C1 C2 Figure 7. Positive Voltage Multiplier Figure 8. Combined Negative Converter and Positive Multiplier © 2001 Microchip Technology Inc. DS21466A 5 TC7660H-2 10/1/96
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H Efficient Positive Voltage Multiplication/ Conversion VOUT = –V– Since the switches that allow the charge pumping op- eration are bidirectional, the charge transfer can be per- 1 8 + formed backwards as easily as forwards. Figure 9 shows a 1.0 µF 2 7 TTChe7 6o6n0lyH p trroabnlesfmor hmeirneg i s– 5thVa tt oth +e5 iVnt e(ornr a+l5 cVlo tcok +a1n0dV s,w eittcch.)-. C1 + 3 TC7660H 6 1 MΩ 1.0 µF drive section will not operate until some positive voltage has 4 5 been generated. An initial inefficient pump, as shown in Figure 9, could be used to start this circuit up, after which it V– INPUT will bypass the diode and resistor shown dotted in Figure 9. Figure 9. Positive Voltage Conversion TYPICAL PERFORMANCE CHARACTERISTICS (Circuit of Figure 1) Output Source Resistance vs. Supply Voltage Output Source Resistance vs. Temperature 10k 500 Ω) TA = +25°C Ω) IOUT = 1 mA E ( E (450 C C N N A A400 ST 1k ST SI SI E E200 R R E E RC RC150 OU100Ω OU V+ = +2V S S100 T T PU PU V + = +5V T T 50 U U O O 10Ω 0 0 1 2 3 4 5 6 7 8 –55 –25 0 +25 +50 +75 +100 +125 SUPPLY VOLTAGE (V) TEMPERATURE (°C) Output Voltage vs. Output Current CI C2 =1µF Output Voltage vs. Load Current 0 5 –1 4 TVA+ == ++52V5°C –2 3 AGE (V) ––34 AGE (V) 12 OLT –5 OLT 0 UT V –6 UT V–1 UTP –7 UTP–2 O O–3 –8 TA = +25°C –4 SLOPE 55Ω –9 LV OPEN –10 –5 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 OUTPUT CURRENT (mA) LOAD CURRENT (mA) TC7660H-2 10/1/96 6 © 2001 Microchip Technology Inc. DS21466A
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H PACKAGE DIMENSIONS PIN 1 8-Pin Plastic DIP .260 (6.60) .240 (6.10) .045 (1.14) .070 (1.78) .030 (0.76) .040 (1.02) .310 (7.87) .400 (10.16) .290 (7.37) .348 (8.84) .200 (5.08) .140 (3.56) .040 (1.02) .020 (0.51) .015 (0.38) 3° MIN. .150 (3.81) .008 (0.20) .115 (2.92) .400 (10.16) .310 (7.87) .110 (2.79) .022 (0.56) .090 (2.29) .015 (0.38) 8-Pin SOIC .157 (3.99) .244 (6.20) .150 (3.81) .228 (5.79) .050 (1.27) TYP. .197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) 8° MAX. .010 (0.25) .007 (0.18) .020 (0.51) .010 (0.25) .050 (1.27) .013 (0.33) .004 (0.10) .016 (0.40) Dimensions: inches (mm) © 2001 Microchip Technology Inc. DS21466A 7 TC7660H-2 10/1/96
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H WORLDWIDE SALES AND SERVICE AMERICAS New York ASIA/PACIFIC (continued) Corporate Office 150 Motor Parkway, Suite 202 Singapore Hauppauge, NY 11788 2355 West Chandler Blvd. Microchip Technology Singapore Pte Ltd. Tel: 631-273-5305 Fax: 631-273-5335 Chandler, AZ 85224-6199 200 Middle Road Tel: 480-792-7200 Fax: 480-792-7277 San Jose #07-02 Prime Centre Technical Support: 480-792-7627 Microchip Technology Inc. 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Le Colleoni 1 Los Angeles Kanagawa, 222-0033, Japan 20041 Agrate Brianza Tel: 81-45-471- 6166 Fax: 81-45-471-6122 18201 Von Karman, Suite 1090 Milan, Italy Korea Irvine, CA 92612 Tel: 39-039-65791-1 Fax: 39-039-6899883 Tel: 949-263-1888 Fax: 949-263-1338 Microchip Technology Korea United Kingdom Mountain View 168-1, Youngbo Bldg. 3 Floor Arizona Microchip Technology Ltd. Samsung-Dong, Kangnam-Ku Analog Product Sales 505 Eskdale Road Seoul, Korea 1300 Terra Bella Avenue Winnersh Triangle Tel: 82-2-554-7200 Fax: 82-2-558-5934 Mountain View, CA 94043-1836 Wokingham Tel: 650-968-9241 Fax: 650-967-1590 Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 01/09/01 All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Printed on recycled paper. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchipís products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec- tual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies. TC7660H-2 10/1/96 8 © 2001 Microchip Technology Inc. DS21466A
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