M TC4467/TC4468/TC4469 Logic-Input CMOS Quad Drivers Features General Description • High Peak Output Current: 1.2A The TC4467/TC4468/TC4469 devices are a family of • Wide Operating Range: four-output CMOS buffers/MOSFET drivers with 1.2A peak drive capability. Unlike other MOSFET drivers, - 4.5V to 18V these devices have two inputs for each output. The • Symmetrical Rise/Fall Times: 25nsec inputs are configured as logic gates: NAND (TC4467), • Short, Equal Delay Times: 75nsec AND (TC4468) and AND/INV (TC4469). • Latch-proof. Will Withstand 500mA Inductive The TC4467/TC4468/TC4469 drivers can continuously Kickback source up to 250mA into ground referenced loads. • 3 Input Logic Choices: These devices are ideal for direct driving low current - AND / NAND / AND + Inv motors or driving MOSFETs in a H-bridge configuration • ESD Protection on All Pins: 2kV for higher current motor drive (see Section5.0 for details). Having the logic gates onboard the driver can Applications help to reduce component count in many designs. The TC4467/TC4468/TC4469 devices are very robust • General Purpose CMOS Logic Buffer and highly latch-up resistant. They can tolerate up to • Driving All Four MOSFETs in an H-Bridge 5V of noise spiking on the ground line and can handle • Direct Small Motor Driver up to 0.5A of reverse current on the driver outputs. • Relay or Peripheral Drivers The TC4467/4468/4469 devices are available in • CCD Driver commercial, industrial and military temperature ranges. • Pin-Switching Network Driver Package Types 14-Pin PDIP/CERDIP 1A 1 14 VDD 1B 2 13 1Y 2A 3 TC4467 12 2Y 2B 4 TC4468 11 3Y TC4469 3A 5 10 4Y 3B 6 9 4B GND 7 8 4A 16-Pin SOIC (Wide) 1A 1 16 VDD 1B 2 15 VDD 2A 3 14 1Y TC4467 2B 4 13 2Y TC4468 3A 5 TC4469 12 3Y 3B 6 11 4Y GND 7 10 4B GND 8 9 4A  2002 Microchip Technology Inc. DS21425B-page 1

TC4467/TC4468/TC4469 Logic Diagrams TC4467 TC4468 TC4469 TC446X V V V DD DD DD V DD 14 14 14 1A 1 13 1A 1 13 1A 1 13 1B 2 1Y 1B 2 1Y 1B 2 1Y 2A 3 12 2A 3 12 2A 3 12 Output 2B 4 2Y 2B 4 2Y 2B 4 2Y 3A 5 11 3A 5 11 3A 5 11 3B 66 3Y 3B 6 3Y 3B 6 3Y 4A 8 10 4A 8 10 4A 8 10 4B 9 4Y 4B 9 4Y 4B 9 4Y 7 7 7 GND GND GND DS21425B-page 2  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 1.0 ELECTRICAL †Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is CHARACTERISTICS a stress rating only and functional operation of the device at those or any other conditions above those indicated in the Absolute Maximum Ratings† operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect Supply Voltage...............................................................+20V device reliability. Input Voltage.............................(GND – 5V) to (V + 0.3V) DD Package Power Dissipation: (T ≤ 70°C) A PDIP...................................................................800mW CERDIP.............................................................840mW SOIC..................................................................760mW Package Thermal Resistance: CERDIP RθJ-A...................................................100°C/W CERDIP RθJ-C.....................................................23°C/W PDIP RθJ-A..........................................................80°C/W PDIP RθJ-C..........................................................35°C/W SOIC RθJ-A..........................................................95°C/W SOIC RθJ-C..........................................................28°C/W Operating Temperature Range: C Version...................................................0°C to +70°C E Version.................................................-40°C to +85°C M Version..............................................-55°C to +125°C Maximum Chip Temperature.......................................+150°C Storage Temperature Range.........................-65°C to +150°C ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, T = +25°C, with 4.5V ≤ V ≤ 18V. A DD Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage V 2.4 — V V Note3 IH DD Logic 0, Low Input Voltage V — — 0.8 V Note3 IL Input Current I -1.0 — +1.0 µA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V – 0.025 — — V I = 100µA (Note1) OH DD LOAD Low Output Voltage V — — 0.15 V I = 10mA (Note1) OL LOAD Output Resistance R — 10 15 Ω I = 10mA, V = 18V O OUT DD Peak Output Current I — 1.2 — A PK Continuous Output Current I — — 300 mA Single Output DC — — 500 Total Package Latch-Up Protection Withstand I — 500 — mA 4.5V ≤ V ≤ 16V DD Reverse Current Switching Time (Note1) Rise Time t — 15 25 nsec Figure4-1 R Fall Time t — 15 25 nsec Figure4-1 F Delay Time t — 40 75 nsec Figure4-1 D1 Delay Time t — 40 75 nsec Figure4-1 D2 Power Supply Power Supply Current I — 1.5 4 mA S Power Supply Voltage V 4.5 — 18 V Note2 DD Note 1: Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. 2: When driving all four outputs simultaneously in the same direction, VDD will be limited to 16V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3: The input threshold has approximately 50mV of hysteresis centered at approximately 1.5V. Input rise times should be kept below 5µsec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.  2002 Microchip Technology Inc. DS21425B-page 3

TC4467/TC4468/TC4469 ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES) Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage V 2.4 — — V Note3 IH Logic 0, Low Input Voltage V — — 0.8 V Note3 IL Input Current I -10 — 10 µA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V – 0.025 — — V I = 100µA (Note1) OH DD LOAD Low Output Voltage V — — 0.30 V I = 10mA (Note1) OL LOAD Output Resistance R — 20 30 Ω I = 10mA, V = 18V O OUT DD Peak Output Current I — 1.2 — A PK Continuous Output Current I — — 300 mA Single Output DC — — 500 Total Package Latch-Up Protection Withstand I — 500 — mA 4.5V ≤ V ≤ 16V DD Reverse Current Switching Time (Note1) Rise Time t — 15 50 nsec Figure4-1 R Fall Time t — 15 50 nsec Figure4-1 F Delay Time t — 40 100 nsec Figure4-1 D1 Delay Time t — 40 100 nsec Figure4-1 D2 Power Supply Power Supply Current I — — 8 mA S Power Supply Voltage V 4.5 — 18 V Note2 DD Note 1: Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. 2: When driving all four outputs simultaneously in the same direction, VDD will be limited to 16V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3: The input threshold has approximately 50mV of hysteresis centered at approximately 1.5V. Input rise times should be kept below 5µsec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device. TRUTH TABLE Part No. TC4467 NAND TC4468 AND TC4469 AND/INV Inputs A H H L L H H L L H H L L Inputs B H L H L H L H L H L H L Outputs TC446X L H H H H L L L L H L L Legend: H = High L = Low DS21425B-page 4  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: T = +25°C, with 4.5V ≤ V ≤ 18V. A DD 140 140 22000 ppF 120 120 2200 pF 100 1600 ppF 100 1500 pF c) c) nse 80 1000 pF nse 80 ( ( 1000 pF tRISE 6400 470 pF tFALL 6400 470 pF 20 100 pF 20 100 ppF 0 0 3 5 7 9 11 13 15 17 19 3 5 7 9 11 13 15 17 19 VSUPPLY (V) VSUPPLY (V) FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Supply Voltage. Voltage. 140 140 120 5 VVVV 120 5 VVVV 100 100 (nsec)tRISE 864000 1105 VV (nsec)tFALL864000 1105 VV 20 20 0 000 100 1000 10,000 100 1000 10,000 CLOAD (pF) CLOAD (pF) FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Fall Time vs. Capacitive Load. Load. 25 80 VCSLUOPAPDL =Y 4=7 107 p.5F V CCLOAD = 4470 pF 20 tFALL ec) 60 s nsec)15 tRISE ME (n ttD1 ME ( Y TI 40 TI10 LA tD2 E D 20 5 0 0 -50 -25 0 25 50 75 100 125 4 6 8 10 12 14 16 18 TEMPERATURE (°C) VSUPPLY (V) FIGURE 2-3: Rise/Fall Times vs. FIGURE 2-6: Propagation Delay Time vs. Temperature. Supply Voltage.  2002 Microchip Technology Inc. DS21425B-page 5

TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: T = +25°C, with 4.5V ≤ V ≤ 18V. A DD 140 70 120 VDD=12VV VDD = 17.5 V sec)100 INPUT RISING sec) 60 VIN = 470 pF tD1 n n TIME ( 80 tD2 TIME ( 50 tD2 Y 60 Y A A 40 DEL 40 INPUT FALLING tD1 DEL 30 20 0 20 1 2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 VDRIVE (V) °C) FIGURE 2-7: Input Amplitude vs. Delay FIGURE 2-10: Propagation Delay Times Times. vs. Temperatures. 2.5 3.5 VVDD = 17.5 V 3.0 2.0 A) A) 2.5 m m (NT 1.5 OUTPUTS = 0 (NT 2.0 OUTPUTS = 0 E E C C S S 1.5 E 1.0 E UI UI OUTPUTS = 1 IQ IQ 1.0 0.5 OUTPUTS = 1 0.5 0 0 4 6 8 10 12 14 16 18 -60 -40 -20 0 20 40 60 80 100 120 VSUPPLY (V) TJUNCTION (°C) FIGURE 2-8: Quiescent Supply Current FIGURE 2-11: Quiescent Supply Current vs. Supply Voltage. vs. Temperature. 35 35 30 30 25 TJ = +150°C 25 Ω) Ω) R(DS(ON) 1250 TJ = +25°C R(DS(ON) 1250 TJ = +150°C 10 10 TJ = +25°C 5 5 0 0 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 VSUPPLY(V) VSUPPLY(V) FIGURE 2-9: High-State Output FIGURE 2-12: Low-State Output Resistance. Resistance. DS21425B-page 6  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: (Load on single output only). 60 60 VDD = 18 V 2MHHz VDD = 18 V 2200 pF 50 111MMMHHHzz 50 11000 pF mA) 40 mA) 40 (ISUPPLY 3200 5000 kHz (ISUPPLY 3200 100 ppF 10 200 kHz 10 20 kHz 0 0 100 1000 10,000 10 100 1000 10,000 CLOAD (pF) FREQUENCY (kHz) FIGURE 2-13: Supply Current vs. FIGURE 2-16: Supply Current vs. Capacitive Load. Frequency. 60 60 VDD=12VV 22MMHHzz VDD=12VV 2200 pF 50 50 A) 40 A) 40 (mY 30 1 MHz (mY 30 1000 pppF L L P P P P ISU 20 500 kHz ISU 20 10 200 kHz 10 100 pF 20 kHz 0 0 100 1000 10,000 10 100 1000 10,000 CLOAD (pF) FREQUENCY (kHz) FIGURE 2-14: Supply Current vs. FIGURE 2-17: Supply Current vs. Capacitive Load. Frequency. 60 60 VVDD = 6 VV VVDD = 6 V 50 50 A) 40 A) 40 m m I(SUPPLY 3200 12 MMHHzz (ISUPPLY 3200 12020000 ppFF 10 500 kHz 10 200 kHz 100 pF 20 kHz 0 0 100 1000 10,000 10 100 1000 10,000 CLOAD (pF) FREQUENCY (kHz) FIGURE 2-15: Supply Current vs. FIGURE 2-18: Supply Current vs. Capacitive Load. Frequency.  2002 Microchip Technology Inc. DS21425B-page 7

TC4467/TC4468/TC4469 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE 14-Pin PDIP, 16-Pin SOIC CERDIP (Wide) Description Symbol Symbol 1A 1A Input A for Driver 1, TTL/CMOS Compatible Input 1B 1B Input B for Driver 1, TTL/CMOS Compatible Input 2A 2A Input A for Driver 2, TTL/CMOS Compatible Input 2B 2B Input B for Driver 2, TTL/CMOS Compatible Input 3A 3A Input A for Driver 3, TTL/CMOS Compatible Input 3B 3B Input B for Driver 3, TTL/CMOS Compatible Input GND GND Ground — GND Ground 4A 4A Input A for Driver 4, TTL/CMOS Compatible Input 4B 4B Input B for Driver 4, TTL/CMOS Compatible Input 4Y 4Y Output for Driver 4, CMOS Push-Pull Output 3Y 3Y Output for Driver 3, CMOS Push-Pull Output 2Y 2Y Output for Driver 2, CMOS Push-Pull Output 1Y 1Y Output for Driver 1, CMOS Push-Pull Output V V Supply Input, 4.5V to 18V DD DD — V Supply Input, 4.5V to 18V DD DS21425B-page 8  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 4.0 DETAILED DESCRIPTION 4.4 Power Dissipation The supply current versus frequency and supply 4.1 Supply Bypassing current versus capacitive load characteristic curves will Large currents are required to charge and discharge aid in determining power dissipation calculations. large capacitive loads quickly. For example, charging a Microchip Technology's CMOS drivers have greatly 1000pF load to 18V in 25nsec requires 0.72A from reduced quiescent DC power consumption. the device's power supply. Input signal duty cycle, power supply voltage and load To ensure low supply impedance over a wide frequency type influence package power dissipation. Given power range, a 1µF film capacitor in parallel with one or two dissipation and package thermal resistance, the maxi- low-inductance, 0.1µF ceramic disk capacitors with mum ambient operating temperature is easily short lead lengths (<0.5in.) normally provide adequate calculated. The 14-pin plastic package junction-to- bypassing. ambient thermal resistance is 83.3°C/W. At +70°C, the package is rated at 800mW maximum dissipation. 4.2 Grounding Maximum allowable chip temperature is +150°C. Three components make up total package power The TC4467 and TC4469 contain inverting drivers. dissipation: Potential drops developed in common ground impedances from input to output will appear as 1. Load-caused dissipation (P ). L negative feedback and degrade switching speed 2. Quiescent power (P ). Q characteristics. Instead, individual ground returns for 3. Transition power (P ). input and output circuits, or a ground plane, should be T used. A capacitive-load-caused dissipation (driving MOSFET gates), is a direct function of frequency, capacitive load 4.3 Input Stage and supply voltage. The power dissipation is: The input voltage level changes the no-load or EQUATION quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5mA current source P = fCV2 L S load. With logic “0” outputs, maximum quiescent supply current is 4mA. Logic “1” output level signals reduce f = Switching Frequency quiescent current to 1.4mA, maximum. Unused driver C = Capacitive Load inputs must be connected to V or V . Minimum DD SS V = Supply Voltage S power dissipation occurs for logic “1” outputs. The drivers are designed with 50mV of hysteresis, A resistive-load-caused dissipation for ground- which provides clean transitions and minimizes output referenced loads is a function of duty cycle, load stage current spiking when changing states. Input volt- current and load voltage. The power dissipation is: age thresholds are approximately 1.5V, making any voltage greater than 1.5V, up to V ,a logic “1” input. DD EQUATION Input current is less than 1µA over this range. P = D(V –V )I L S L L D = Duty Cycle V = Supply Voltage S V = Load Voltage L I = Load Current L  2002 Microchip Technology Inc. DS21425B-page 9

TC4467/TC4468/TC4469 A resistive-load-caused dissipation for supply- EQUATION referenced loads is a function of duty cycle, load current and output voltage. The power dissipation is P = fV (10×10–9) T s EQUATION C = 1000 pF Capacitive Load V = 15 V S P = DV I L O L D = 50% f = 200kHz D = Duty Cycle V = Device Output Voltage P = Package Power Dissipation O D IL = Load Current = PL+PQ+PT = 45mW+35mW+30mW Quiescent power dissipation depends on input signal = 110mW duty cycle. Logic HIGH outputs result in a lower power dissipation mode, with only 0.6mA total current drain Package power dissipation is the sum of load, (all devices driven). Logic LOW outputs raise the quiescent and transition power dissipations. An current to 4mA maximum. The quiescent power example shows the relative magnitude for each term: dissipation is: Maximum operating temperature is: EQUATION EQUATION P = V (D(I )+(1–D)I ) Q S H L T –θ (P ) = 141°C J JA D I = Quiescent Current with all outputs LOW H T = Maximum allowable junction temperature J (4 mA max.) (+150°C) I = Quiescent Current with all outputs HIGH L θ = Junction-to-ambient thernal resistance JA (0.6 mA max.) (83.3°C/W) 14-pin plastic package D = Duty Cycle V = Supply Voltage S Note: Ambient operating temperature should not exceed +85°C for "EJD" device or +125°C Transition power dissipation arises in the complimen- for "MJD" device. tary configuration (TC446X) because the output stage N-channel and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition power dissipation is approximately: V DD I nput: 100kHz, s quare wave, 1µF Film 0.1µF Ceramic t = t ≤ 10nsec RISE FALL 14 1 +5V 1A 13 90% 2 VOUT 1B 470pF Input 3 2A 12 (A, B) 4 2B 0V 10% 5 3A 6 11 VDD t 90% t 90% 3B D1 D2 t t Output R F 8 4A 10 4B 9 0V 10% 10% 7 FIGURE 4-1: Switching Time Test Circuit. DS21425B-page 10  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 5.0 APPLICATIONS INFORMATION +12V 14 Airpax TC4469 #M82102-P2 1 1133 Red 7.5/Step 2 Motor 3 12 4 A Gray 55 B 11 Yel 6 8 10 Blk 9 7 FIGURE 5-1: Stepper Motor Drive. +5V to +15V 14 18V TC4469 1 13 2 Direction 3 Rev 12 Fwd 4 5 PWM Speed 11 6 M Motor 8 10 9 7 FIGURE 5-2: Quad Driver For H-bridge Motor Control.  2002 Microchip Technology Inc. DS21425B-page 11

TC4467/TC4468/TC4469 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 14-Lead PDIP (300 mil) Example: XXXXXXXXXXXXXX TC4467CPD XXXXXXXXXXXXXX YYWWNNN YYWWNNN 14-Lead CERDIP (300 mil) Example: XXXXXXXXXXXXXX TC4468EJD XXXXXXXXXXXXXX YYWWNNN YYWWNNN 16-Lead SOIC (300 mil) Example: XXXXXXXXXXX TC4469COE XXXXXXXXXXX YYWWNNN XXXXXXXXXXX YYWWNNN Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, facility code, mask rev#, and assembly code. DS21425B-page 12  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 14-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 c L A1 β B1 eB B p Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 14 14 Pitch p .100 2.54 Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .740 .750 .760 18.80 19.05 19.30 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-005  2002 Microchip Technology Inc. DS21425B-page 13

TC4467/TC4468/TC4469 14-Lead Ceramic Dual In-line – 300 mil (CERDIP) 14-Pin CERDIP (Narrow) PIN 1 .300 (7.62) .230 (5.84) .098 (2.49) MAX. .030 (0.76) MIN. .780 (19.81) .320 (8.13) .740 (18.80) .290 (7.37) .040 (1.02) .200 (5.08) .020 (0.51) .160 (4.06) .015 (0.38) 3° MIN. .200 (5.08) .150 (3.81) .008 (0.20) .125 (3.18) MIN. .400 (10.16) .320 (8.13) .020 (0.51) .110 (2.79) .065 (1.65) .016 (0.41) .090 (2.29) .045 (1.14) Dimensions: inches (mm) DS21425B-page 14  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC) E p E1 D 2 n 1 B h α 45° c A A2 φ β L A1 Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 16 16 Pitch p .050 1.27 Overall Height A .093 .099 .104 2.36 2.50 2.64 Molded Package Thickness A2 .088 .091 .094 2.24 2.31 2.39 Standoff § A1 .004 .008 .012 0.10 0.20 0.30 Overall Width E .394 .407 .420 10.01 10.34 10.67 Molded Package Width E1 .291 .295 .299 7.39 7.49 7.59 Overall Length D .398 .406 .413 10.10 10.30 10.49 Chamfer Distance h .010 .020 .029 0.25 0.50 0.74 Foot Length L .016 .033 .050 0.41 0.84 1.27 Foot Angle φ 0 4 8 0 4 8 Lead Thickness c .009 .011 .013 0.23 0.28 0.33 Lead Width B .014 .017 .020 0.36 0.42 0.51 Mold Draft Angle Top α 0 12 15 0 12 15 Mold Draft Angle Bottom β 0 12 15 0 12 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-013 Drawing No. C04-102  2002 Microchip Technology Inc. DS21425B-page 15

TC4467/TC4468/TC4469 NOTES: DS21425B-page 16  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 ON-LINE SUPPORT Systems Information and Upgrade Hot Line The Systems Information and Upgrade Line provides Microchip provides on-line support on the Microchip system users a listing of the latest versions of all of World Wide Web (WWW) site. Microchip's development systems software products. The web site is used by Microchip as a means to make Plus, this line provides information on how customers files and information easily available to customers. To can receive any currently available upgrade kits.The view the site, the user must have access to the Internet Hot Line Numbers are: and a web browser, such as Netscape or Microsoft 1-800-755-2345 for U.S. and most of Canada, and Explorer. Files are also available for FTP download from our FTP site. 1-480-792-7302 for the rest of the world. Connecting to the Microchip Internet Web Site 013001 The Microchip web site is available by using your favorite Internet browser to attach to: www.microchip.com The file transfer site is available by using an FTP ser- vice to connect to: ftp://ftp.microchip.com The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A vari- ety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is: • Latest Microchip Press Releases • Technical Support Section with Frequently Asked Questions • Design Tips • Device Errata • Job Postings • Microchip Consultant Program Member Listing • Links to other useful web sites related to Microchip Products • Conferences for products, Development Systems, technical information and more • Listing of seminars and events  2002 Microchip Technology Inc. DS21425B-page17

TC4467/TC4468/TC4469 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod- uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this Data Sheet. To: Technical Publications Manager Total Pages Sent RE: Reader Response From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Y N Device: TC4467/TC4468/TC4469 Literature Number: DS21425B Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this data sheet easy to follow? If not, why? 4. What additions to the data sheet do you think would enhance the structure and subject? 5. What deletions from the data sheet could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? 8. How would you improve our software, systems, and silicon products? DS21425B-page18  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX Examples: a) TC4467COE: Commerical Temperature, Device Temperature Package SOIC package. Range b) TC4467CPD: Commercial Temperature, PDIP package. c) TC4467MJD: Military Temperature, Device: TC4467: 1.2A Quad MOSFET Driver, NAND Ceramic DIP package. TC4468: 1.2A Quad MOSFET Driver, AND TC4469: 1.2A Quad MOSFET Driver, AND/INV a) TC4468COE713: Tape and Reel, Commerical Temp., SOIC package. b) TC4468CPD: Commercial Temperature, Temperature Range: C = 0°C to +70°C PDIP package. E = -40°C to +85°C (CERDIP only) M = -55°C to +125°C (CERDIP only) a) TC4469COE: Commercial Temperature, SOIC package. b) TC4469CPD: Commercial Temperature, Package: PD = Plastic DIP, (300 mil body), 14-lead PDIP package. JD = Ceramic DIP, (300 mil body), 14-lead OE = SOIC (Wide), 16-lead OE713 = SOIC (Wide), 16-lead (Tape and Reel) Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21425B-page19

TC4467/TC4468/TC4469 NOTES: DS21425B-page 20  2002 Microchip Technology Inc.

TC4467/TC4468/TC4469 Information contained in this publication regarding device Trademarks applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to The Microchip name and logo, the Microchip logo, FilterLab, ensure that your application meets with your specifications. KEELOQ, microID, MPLAB, MXDEV, PIC, PICmicro, No representation or warranty is given and no liability is PICMASTER, PICSTART, PRO MATE, SEEVAL and The assumed by Microchip Technology Incorporated with respect Embedded Control Solutions Company are registered trade- to the accuracy or use of such information, or infringement of marks of Microchip Technology Incorporated in the U.S.A. and patents or other intellectual property rights arising from such other countries. use or otherwise. Use of Microchip’s products as critical com- dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, ponents in life support systems is not authorized except with FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, express written approval by Microchip. No licenses are con- ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, veyed, implicitly or otherwise, under any intellectual property MPLINK, MPSIM, MXLAB, PICC, PICDEM, PICDEM.net, rights. rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.  2002 Microchip Technology Inc. DS21425B-page 21

M WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Japan Corporate Office Australia Microchip Technology Japan K.K. Benex S-1 6F 2355 West Chandler Blvd. Microchip Technology Australia Pty Ltd 3-18-20, Shinyokohama Chandler, AZ 85224-6199 Suite 22, 41 Rawson Street Kohoku-Ku, Yokohama-shi Tel: 480-792-7200 Fax: 480-792-7277 Epping 2121, NSW Kanagawa, 222-0033, Japan Technical Support: 480-792-7627 Australia Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Web Address: http://www.microchip.com Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Korea Rocky Mountain China - Beijing Microchip Technology Korea 2355 West Chandler Blvd. Microchip Technology Consulting (Shanghai) 168-1, Youngbo Bldg. 3 Floor Chandler, AZ 85224-6199 Co., Ltd., Beijing Liaison Office Samsung-Dong, Kangnam-Ku Tel: 480-792-7966 Fax: 480-792-4338 Unit 915 Seoul, Korea 135-882 Bei Hai Wan Tai Bldg. Atlanta Tel: 82-2-554-7200 Fax: 82-2-558-5934 No. 6 Chaoyangmen Beidajie 500 Sugar Mill Road, Suite 200B Singapore Beijing, 100027, No. China Atlanta, GA 30350 Tel: 86-10-85282100 Fax: 86-10-85282104 Microchip Technology Singapore Pte Ltd. Tel: 770-640-0034 Fax: 770-640-0307 200 Middle Road China - Chengdu Boston #07-02 Prime Centre Microchip Technology Consulting (Shanghai) 2 Lan Drive, Suite 120 Singapore, 188980 Westford, MA 01886 Co., Ltd., Chengdu Liaison Office Tel: 65-6334-8870 Fax: 65-6334-8850 Rm. 2401, 24th Floor, Tel: 978-692-3848 Fax: 978-692-3821 Taiwan Ming Xing Financial Tower Chicago Microchip Technology (Barbados) Inc., No. 88 TIDU Street 333 Pierce Road, Suite 180 Chengdu 610016, China Taiwan Branch Itasca, IL 60143 Tel: 86-28-86766200 Fax: 86-28-86766599 11F-3, No. 207 Tel: 630-285-0071 Fax: 630-285-0075 Tung Hua North Road China - Fuzhou Dallas Taipei, 105, Taiwan 4570 Westgrove Drive, Suite 160 Microchip Technology Consulting (Shanghai) Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Co., Ltd., Fuzhou Liaison Office Addison, TX 75001 Unit 28F, World Trade Plaza Tel: 972-818-7423 Fax: 972-818-2924 No. 71 Wusi Road EUROPE Detroit Fuzhou 350001, China Tri-Atria Office Building Tel: 86-591-7503506 Fax: 86-591-7503521 Denmark 32255 Northwestern Highway, Suite 190 China - Shanghai Microchip Technology Nordic ApS Farmington Hills, MI 48334 Microchip Technology Consulting (Shanghai) Regus Business Centre Tel: 248-538-2250 Fax: 248-538-2260 Lautrup hoj 1-3 Co., Ltd. Kokomo Room 701, Bldg. B Ballerup DK-2750 Denmark 2767 S. Albright Road Far East International Plaza Tel: 45 4420 9895 Fax: 45 4420 9910 Kokomo, Indiana 46902 No. 317 Xian Xia Road France Tel: 765-864-8360 Fax: 765-864-8387 Shanghai, 200051 Microchip Technology SARL Los Angeles Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu 18201 Von Karman, Suite 1090 China - Shenzhen Irvine, CA 92612 Microchip Technology Consulting (Shanghai) Batiment A - ler Etage Tel: 949-263-1888 Fax: 949-263-1338 Co., Ltd., Shenzhen Liaison Office 9Te1l3: 0303 -M1-a6s9s-y5, 3F-r6a3n-c2e0 Fax: 33-1-69-30-90-79 New York Rm. 1315, 13/F, Shenzhen Kerry Centre, Germany 150 Motor Parkway, Suite 202 Renminnan Lu Microchip Technology GmbH Hauppauge, NY 11788 Shenzhen 518001, China Tel: 631-273-5305 Fax: 631-273-5335 Tel: 86-755-2350361 Fax: 86-755-2366086 Gustav-Heinemann Ring 125 D-81739 Munich, Germany San Jose China - Hong Kong SAR Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Microchip Technology Inc. Microchip Technology Hongkong Ltd. Italy 2107 North First Street, Suite 590 Unit 901-6, Tower 2, Metroplaza Microchip Technology SRL San Jose, CA 95131 223 Hing Fong Road Tel: 408-436-7950 Fax: 408-436-7955 Kwai Fong, N.T., Hong Kong Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 Toronto Tel: 852-2401-1200 Fax: 852-2401-3431 20041 Agrate Brianza 6285 Northam Drive, Suite 108 India Milan, Italy Mississauga, Ontario L4V 1X5, Canada Microchip Technology Inc. Tel: 39-039-65791-1 Fax: 39-039-6899883 Tel: 905-673-0699 Fax: 905-673-6509 India Liaison Office United Kingdom Divyasree Chambers Microchip Ltd. 1 Floor, Wing A (A3/A4) 505 Eskdale Road No. 11, O’Shaugnessey Road Winnersh Triangle Bangalore, 560 025, India Wokingham Tel: 91-80-2290061 Fax: 91-80-2290062 Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 05/16/02 DS21425B-page 22  2002 Microchip Technology Inc.

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: M icrochip: TC4467EOE TC4468COE713 TC4469COE713 TC4467COE TC4467CPD TC4468CPD TC4468COE TC4467COE713 TC4467EPD TC4469EOE TC4469EPD TC4468EOE TC4468EPD TC4469CPD TC4469COE TC4469EOE713