TC4451/TC4452 12A High-Speed MOSFET Drivers Features General Description (cid:149) High Peak Output Current: 13A (typ.) The TC4451/TC4452 are single-output MOSFET (cid:149) Low Shoot-Through/Cross-Conduction Current in drivers. These devices are high-current buffer/drivers Output Stage capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4451/TC4452 have (cid:149) Wide Input Supply Voltage Operating Range: matched output rise and fall times, as well as matched - 4.5V to 18V leading and falling-edge propagation delay times. The (cid:149) High Continuous Output Current: 2.6A (max.) TC4451/TC4452 devices also have very low cross- (cid:149) Matched Fast Rise and Fall Times: conduction current, reducing the overall power - 21ns with 10,000pF Load dissipation of the device. - 42ns with 22,000pF Load These devices are essentially immune to any form of (cid:149) Matched Short Propagation Delays: 44ns (typ.) upset, except direct overvoltage or over-dissipation. (cid:149) Low Supply Current: They cannot be latched under any conditions within their power and voltage ratings. These parts are not - With Logic (cid:145)1(cid:146) Input (cid:150) 140μA (typ.) subject to damage or improper operation when up to - With Logic (cid:145)0(cid:146) Input (cid:150) 40μA (typ.) 5V of ground bounce is present on their ground (cid:149) Low Output Impedance: 0.9Ω (typ.) terminals. They can accept, without damage or logic (cid:149) Latch-Up Protected: Will Withstand 1.5A Output upset, more than 1.5A inductive current of either Reverse Current polarity being forced back into their outputs. In addition, (cid:149) Input Will Withstand Negative Inputs Up To 5V all terminals are fully protected against up to 4kV of electrostatic discharge. (cid:149) Pin-Compatible with the TC4420/TC4429, TC4421/TC4422 and TC4421A/TC4422A The TC4451/TC4452 inputs may be driven directly MOSFET Drivers from either TTL or CMOS (3V to 18V). In addition, (cid:149) Space-Saving, Thermally-Enhanced, 8-Pin DFN 300mV of hysteresis is built into the input, providing Package noise immunity and allowing the device to be driven from slowly rising or falling waveforms. Applications With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature (cid:149) Line Drivers for Extra Heavily-Loaded Lines range, the TC4451/TC4452 family of 12A MOSFET (cid:149) Pulse Generators drivers fit into most any application where high gate/line (cid:149) Driving the Largest MOSFETs and IGBTs capacitance drive is required. (cid:149) Local Power ON/OFF Switch (cid:149) Motor and Solenoid Driver (cid:149) LF Initiator © 2006 Microchip Technology Inc. DS21987A-page 1

TC4451/TC4452 Package Types(1) 8-Pin TC4451 TC4452 8-Pin DFN(2) TC4451 TC4452 5-Pin TO-220 PDIP/SOIC Tab is VDD 1 8 VDD VDD VDD 1 8 VDD VDD Common INPUT 2 TC4451 7 OUTPUT OUTPUT INPUT 2 TC4451 7 OUTPUT OUTPUT to VDD NC 3 TC4452 6 OUTPUT OUTPUT NC 3 TC4452 6 OUTPUT OUTPUT TC4451 GND 4 5 GND GND TC4452 GND 4 5 GND GND Note1: Duplicate pins must both be connected for proper operation. PUTGNDVDDGNDTPUT 2: Exposed pad of the DFN package is electrically isolated. N U I O Functional Block Diagram V DD TC4451 Inverting 140μA Output 300mV Cross-Conduction Reduction and Pre-Drive Output Circuitry TC4452 Input Non-Inverting 4.7V GND Effective Input C = 25pF DS21987A-page 2 © 2006 Microchip Technology Inc.

TC4451/TC4452 1.0 ELECTRICAL (cid:134) Stresses above those listed under (cid:147)Absolute Maximum Ratings(cid:148) may cause permanent damage to the device. These CHARACTERISTICS are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the Absolute Maximum Ratings (cid:134) operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage.....................................................+20V extended periods may affect device reliability. Input Voltage....................(V + 0.3V) to (GND (cid:150) 5V) DD Input Current (V > V )...................................50mA IN DD DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T = +25(cid:176)C with 4.5V ≤ V ≤ 18V. A DD Parameters Sym Min Typ Max Units Conditions Input Logic (cid:145)1(cid:146), High Input Voltage V 2.4 1.5 (cid:151) V IH Logic (cid:145)0(cid:146), Low Input Voltage V (cid:151) 1.3 0.8 V IL Input Current I (cid:150)10 (cid:151) +10 μA 0V ≤ V ≤ V IN IN DD Input Voltage V (cid:150)5 (cid:151) V + 0.3 V IN DD Output High Output Voltage V V (cid:150) 0.025 (cid:151) (cid:151) V DC Test OH DD Low Output Voltage V (cid:151) (cid:151) 0.025 V DC Test OL Output Resistance, High R (cid:151) 1.0 1.5 Ω I = 10mA, V = 18V OH OUT DD Output Resistance, Low R (cid:151) 0.9 1.5 Ω I = 10mA, V = 18V OL OUT DD Peak Output Current I (cid:151) 13 (cid:151) A V = 18V PK DD Continuous Output Current I 2.6 (cid:151) (cid:151) A 10V ≤ V ≤ 18V (Note2, Note3) DC DD Latch-Up Protection I (cid:151) >1.5 (cid:151) A Duty cycle ≤ 2%, t ≤ 300μs REV Withstand Reverse Current Switching Time (Note1) Rise Time t (cid:151) 30 40 ns Figure4-1, C = 15,000pF R L Fall Time t (cid:151) 32 40 ns Figure4-1, C = 15,000pF F L Propagation Delay Time t (cid:151) 44 52 ns Figure4-1, C = 15,000pF D1 L Propagation Delay Time t (cid:151) 44 52 ns Figure4-1, C = 15,000pF D2 L Power Supply Power Supply Current I (cid:151) 140 200 μA V = 3V S IN (cid:151) 40 100 μA V = 0V IN Operating Input Voltage V 4.5 (cid:151) 18.0 V DD Note 1: Switching times ensured by design. 2: Tested during characterization, not production tested. 3: Valid for AT and MF packages only. T = +25(cid:176)C. A © 2006 Microchip Technology Inc. DS21987A-page 3

TC4451/TC4452 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Input Logic (cid:145)1(cid:146), High Input Voltage V 2.4 (cid:151) (cid:151) V IH Logic (cid:145)0(cid:146), Low Input Voltage V (cid:151) (cid:151) 0.8 V IL Input Current I (cid:150)10 (cid:151) +10 μA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V (cid:150) 0.025 (cid:151) (cid:151) V DC Test OH DD Low Output Voltage V (cid:151) (cid:151) 0.025 V DC Test OL Output Resistance, High R (cid:151) (cid:151) 2.2 Ω I = 10mA, V = 18V OH OUT DD Output Resistance, Low R (cid:151) (cid:151) 2.0 Ω I = 10mA, V = 18V OL OUT DD Switching Time (Note1) Rise Time t (cid:151) 35 60 ns Figure4-1, C = 15,000pF R L Fall Time t (cid:151) 38 60 ns Figure4-1, C = 15,000pF F L Propagation Delay Time t (cid:151) 55 65 ns Figure4-1, C = 15,000pF D1 L Propagation Delay Time t (cid:151) 55 65 ns Figure4-1, C = 15,000pF D2 L Power Supply Power Supply Current I (cid:151) 200 400 μA V = 3V S IN (cid:151) 50 150 μA V = 0V IN Operating Input Voltage V 4.5 (cid:151) 18.0 V DD Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (V) T (cid:150)40 (cid:151) +125 (cid:176)C A Maximum Junction Temperature T (cid:151) (cid:151) +150 (cid:176)C J Storage Temperature Range T (cid:150)65 (cid:151) +150 (cid:176)C A Package Thermal Resistances Thermal Resistance, 5L-TO-220 θ (cid:151) 71 (cid:151) (cid:176)C/W Without heat sink JA Thermal Resistance, 8L-6x5 DFN θ (cid:151) 33.2 (cid:151) (cid:176)C/W Typical 4-layer board with JA vias to ground plane Thermal Resistance, 8L-PDIP θ (cid:151) 125 (cid:151) (cid:176)C/W JA Thermal Resistance, 8L-SOIC θ (cid:151) 155 (cid:151) (cid:176)C/W JA DS21987A-page 4 © 2006 Microchip Technology Inc.

TC4451/TC4452 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T = +25(cid:176)C with 4.5V ≤ V ≤ 18V. A DD 220 300 200 47,000 pF 180 250 5V ns) 114600 ns) 200 me ( 120 me ( 150 10V Ti 100 22,000 pF Ti Rise 6800 Fall 100 40 50 18V 20 10,000 pF 0 0 4 6 8 10 12 14 16 18 100 1000 10000 100000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Capacitive Voltage. Load. 300 40 250 5V ns) VDD = 18V tRISE ns) 200 mes (30 tFALL e ( 10V Ti Tim 150 Fall 20 Rise 100 18V e and 10 50 s Ri 0 0 100 1000 10000 100000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature ((cid:176)C) Capacitive Load (pF) FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Rise and Fall Times vs. Load. Temperature. 220 11E0-0-77 200 47,000 pF ec) 180 A•s ns) 114600 gy ( me ( 120 Ener 11E0-0-88 Fall Ti 1068000 22,000 pF sover s 40 Cro 20 10,000 pF 11E0-0-99 0 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-3: Fall Time vs. Supply FIGURE 2-6: Crossover Energy vs. Voltage. Supply Voltage. © 2006 Microchip Technology Inc. DS21987A-page 5

TC4451/TC4452 Note: Unless otherwise indicated, T = +25(cid:176)C with 4.5V ≤ V ≤ 18V. A DD 95 140 90 CLOAD = 15,000 pF ns) 85 VIN = 5V 120 INPUT = High on Delay ( 67785050 (μA)CENT 10800 Propagati 45565050 tD1 tD2 IQUIES 4600 INPUT = Low 40 20 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-7: Propagation Delay vs. FIGURE 2-10: Quiescent Supply Current Supply Voltage. vs. Supply Voltage. 100 220 95 CLOAD = 15,000 pF 200 VDD = 18 V ns) 90 VDD = 10V 180 INPUT = High Propagation Delay ( 455667788505050505 tD1 tD2 I (μA)QUIESCENT 111102464680000000 INPUT = Low 40 20 2 3 4 5 6 7 8 9 10 -40 -25 -10 5 20 35 50 65 80 95 110125 Input Amplitude (V) Temperature (oC) FIGURE 2-8: Propagation Delay vs. Input FIGURE 2-11: Quiescent Supply Current Amplitude. vs. Temperature. 60 2 VDD = 10V 1.9 VDD = 12 V n Delay (ns) 455505 VCILNO =AD 5 =V 15,000 pF eshold (V) 1111....5678 VIH agatio 40 tD2 ut Thr 11..34 op 35 np 1.2 VIL Pr tD1 I 1.1 30 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110125 Temperature (oC) Temperature (oC) FIGURE 2-9: Propagation Delay vs. FIGURE 2-12: Input Threshold vs. Temperature. Temperature. DS21987A-page 6 © 2006 Microchip Technology Inc.

TC4451/TC4452 Note: Unless otherwise indicated, T = +25(cid:176)C with 4.5V ≤ V ≤ 18V. A DD 2 300 1.9 VDD = 18 V 200 kHz V) 1.8 mA) 250 Input Threshold ( 111111......234567 VVIIHL Supply Current ( 11205050000 21 MMHHzz 10 kHz50 k1H00z kHz 1.1 1 0 4 6 8 10 12 14 16 18 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-13: Input Threshold vs. Supply FIGURE 2-16: Supply Current vs. Voltage. Capacitive Load (V = 18V). DD 300 4.0 3.5 VVIINN == 50VV ((TTCC44445521)) A) 250 VDD = 12 V 1 2M0H0 zkHz 3.0 m ) 2.5 nt ( 200 ΩR (OUT-HI 112...050 TJ = 125oC pply Curre 110500 2 MHz 501 k0H0 zkHz 0.5 TJ = 25oC Su 50 10 kHz 0.0 0 4 6 8 10 12 14 16 18 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-14: High-State Output FIGURE 2-17: Supply Current vs. Resistance vs. Supply Voltage. Capacitive Load (V = 12V). DD 175 3.0 VIN = 0V (TC4452) 155 VDD = 6 V 2 MHz 1 MHz 2.5 VIN = 5V (TC4451) A) 135 m ) 2.0 nt ( 115 200 kHz Ω (UT-LO 1.5 TJ = 125oC Curre 7955 100 kHz RO 1.0 ply 55 50 kHz 0.5 TJ = 25oC Sup 1355 10 kHz 0.0 -5 4 6 8 10 12 14 16 18 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-15: Low-State Output FIGURE 2-18: Supply Current vs. Resistance vs. Supply Voltage. Capacitive Load (V = 6V). DD © 2006 Microchip Technology Inc. DS21987A-page 7

TC4451/TC4452 Note: Unless otherwise indicated, T = +25(cid:176)C with 4.5V ≤ V ≤ 18V. A DD 250 250 VDD = 18 V 15,000 pF VDD = 6 V A) 200 A) 200 nt (m 150 22,000 pF 10,000 pF1,000 pF nt (m 150 15,000 pF urre 47,000 pF urre 22,000 pF C 100 C 100 10,000 pF Supply 50 0.1 μF 470 pF Supply 50 0.417 μ,0F00 pF 1,000 pF 470 pF 0 0 10 100 1000 10000 10 100 1000 10000 Frequency (kHz) Frequency (kHz) FIGURE 2-19: Supply Current vs. FIGURE 2-21: Supply Current vs. Frequency (V = 18V). Frequency (V = 6V). DD DD 250 VDD = 12 V A) 200 15,000 pF m ent ( 150 22,000 pF 10,000 pF urr y C 100 47,000 pF 1,000 pF pl p 0.1 μF u 50 470 pF S 0 10 100 1000 10000 Frequency (kHz) FIGURE 2-20: Supply Current vs. Frequency (V = 12V). DD DS21987A-page 8 © 2006 Microchip Technology Inc.

TC4451/TC4452 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Pin No. Pin No. 8-Pin PDIP, Symbol Description 8-Pin DFN 5-Pin TO-220 SOIC 1 1 (cid:151) V Supply input, 4.5V to 18V DD 2 2 1 INPUT Control input, TTL/CMOS-compatible input 3 3 (cid:151) NC No connection 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 (cid:151) OUTPUT CMOS push-pull output 8 8 3 V Supply input, 4.5V to 18V DD (cid:151) PAD (cid:151) NC Exposed metal pad (cid:151) (cid:151) TAB V Metal tab is at the V potential DD DD 3.1 Supply Input (V ) 3.4 Ground DD The V input is the bias supply for the MOSFET driver The ground pins are the return path for the bias current DD and is rated for 4.5V to 18V with respect to the ground and for the high peak currents that discharge the load pin. The V input should be bypassed to ground with capacitor. The ground pins should be tied into a ground DD a local ceramic capacitor. The value of the capacitor plane or have very short traces to the bias supply should be chosen based on the capacitive load that is source return. being driven. A minimum value of 1.0μF is suggested. 3.5 Exposed Metal Pad 3.2 Control Input The exposed metal pad of the 6x5 DFN package is not The MOSFET driver input is a high-impedance, internally connected to any potential. Therefore, this TTL/CMOS-compatible input. The input also has pad can be connected to a ground plane or other 300mV of hysteresis between the high and low copper plane on a Printed Circuit Board (PCB) to aid in thresholds that prevents output glitching even when the heat removal from the package. rise and fall time of the input signal is very slow. 3.6 Metal Tab 3.3 CMOS Push-Pull Output The metal tab of the TO-220 package is connected to The MOSFET driver output is a low-impedance, the V potential of the device. This connection to V DD DD CMOS, push-pull style output capable of driving a can be used as a current carrying path for the device. capacitive load with 12A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. © 2006 Microchip Technology Inc. DS21987A-page 9

TC4451/TC4452 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 10% 0V tD1 tD2 t t F R +18V 0.1μF 0.1μF 4.7μF 90% 90% 1 8 Output VDD VDD 10% 10% 0V Inverting Driver Input 2 Input Output 6 Output TC4451 7 Output C = 15,000pF +5V L 90% GND GND Input 4 5 10% 0V +18V 90% 90% tD1 tD2 Input: 100kHz, Output tR tF square wave, t = t ≤ 10ns 0V 10% 10% RISE FALL Non-Inverting Driver TC4452 Note: Pinout shown is for the DFN, PDIP and SOIC packages. FIGURE 4-1: Switching Time Test Circuits. DS21987A-page 10 © 2006 Microchip Technology Inc.

TC4451/TC4452 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX TC4451 XXXXXXXXX XXXVAXTXX^eX^3XX YYWWNNN 0649256 8-Lead DFN-S Example: XXXXXXX TC4451 XXXXXXX VMF^e3 XXYYWW 0649 NNN 256 8-Lead PDIP (300 mil) Example: XXXXXXXX TC4451V XXXXXNNN PA^e^3256 YYWW 0649 8-Lead SOIC (150 mil) Example: XXXXXXXX TC4451V XXXXYYWW OAe^3^0649 NNN 256 Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week (cid:145)01(cid:146)) NNN Alphanumeric traceability code e3 Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e 3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2006 Microchip Technology Inc. DS21987A-page 11

TC4451/TC4452 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q β e3 e1 E e EJECTOR PIN (cid:216)P α(5(cid:176)) C1 A J1 F D Units INCHES* MILLIMETERS Dimension Limits MIN MAX MIN MAX Lead Pitch e .060 .072 1.52 1.83 Overall Lead Centers e1 .263 .273 6.68 6.93 Space Between Leads e3 .030 .040 0.76 1.02 Overall Height A .160 .190 4.06 4.83 Overall Width E .385 .415 9.78 10.54 Overall Length D .560 .590 14.22 14.99 Flag Length H1 .234 .258 5.94 6.55 Flag Thickness F .045 .055 1.14 1.40 Through Hole Center Q .103 .113 2.62 2.87 Through Hole Diameter P .146 .156 3.71 3.96 Lead Length L .540 .560 13.72 14.22 Base to Bottom of Lead J1 .090 .115 2.29 2.92 Lead Thickness C1 .014 .022 0.36 0.56 Lead Width β .025 .040 0.64 1.02 Mold Draft Angle α 3(cid:176) 7(cid:176) 3(cid:176) 7(cid:176) * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 Revised 08-01-05 DS21987A-page 12 © 2006 Microchip Technology Inc.

TC4451/TC4452 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) (cid:150) Saw Singulated © 2006 Microchip Technology Inc. DS21987A-page 13

TC4451/TC4452 8-Lead Plastic Dual In-line (PA) (cid:150) 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010(cid:148) (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 DS21987A-page 14 © 2006 Microchip Technology Inc.

TC4451/TC4452 8-Lead Plastic Small Outline (OA) (cid:150) Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 h α 45° c A A2 φ β L A1 Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .050 1.27 Overall Height A .053 .061 .069 1.35 1.55 1.75 Molded Package Thickness A2 .052 .056 .061 1.32 1.42 1.55 Standoff § A1 .004 .007 .010 0.10 0.18 0.25 Overall Width E .228 .237 .244 5.79 6.02 6.20 Molded Package Width E1 .146 .154 .157 3.71 3.91 3.99 Overall Length D .189 .193 .197 4.80 4.90 5.00 Chamfer Distance h .010 .015 .020 0.25 0.38 0.51 Foot Length L .019 .025 .030 0.48 0.62 0.76 Foot Angle φ 0 4 8 0 4 8 Lead Thickness c .008 .009 .010 0.20 0.23 0.25 Lead Width B .013 .017 .020 0.33 0.42 0.51 Mold Draft Angle Top α 0 12 15 0 12 15 Mold Draft Angle Bottom β 0 12 15 0 12 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010(cid:148) (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 © 2006 Microchip Technology Inc. DS21987A-page 15

TC4451/TC4452 NOTES: DS21987A-page 16 © 2006 Microchip Technology Inc.

TC4451/TC4452 APPENDIX A: REVISION HISTORY Revision A (February 2006) (cid:149) Original Release of this Document. © 2006 Microchip Technology Inc. DS21987A-page 17

TC4451/TC4452 NOTES: DS21987A-page 18 © 2006 Microchip Technology Inc.

TC4451/TC4452 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX XXX Examples: a) TC4451VAT: 12A High-Speed Inverting Device Temperature Package Tape & Reel MOSFET Driver, Range TO-220 package b) TC4451VOA: 12A High-Speed Inverting MOSFET Driver, Device: TC4451: 12A High-Speed MOSFET Driver, Inverting SOIC package TC4452: 12A High-Speed MOSFET Driver, Non-Inverting c) TC4451VMF: 12A High-Speed Inverting MOSFET Driver, Temperature Range: V = -40(cid:176)C to +125(cid:176)C DFN package a) TC4452VPA: 12A High-Speed Package: * AT = TO-220, 5-lead Non-Inverting MOSFET MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead Driver, PDIP package MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) b) TC4452VOA: 12A High-Speed PA = Plastic DIP (300 mil Body), 8-lead Non-Inverting OA = Plastic SOIC (150 mil Body), 8-lead MOSFET Driver, OA713 = Plastic SOIC (150 mil Body), 8-lead SOIC package (Tape and Reel) c) TC4452VMF: 12A High-Speed *All package offerings are Pb Free (Lead Free). Non-Inverting MOSFET Driver, DFN package © 2006 Microchip Technology Inc. DS21987A-page 19

TC4451/TC4452 NOTES: DS21987A-page 20 © 2006 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: (cid:149) Microchip products meet the specification contained in their particular Microchip Data Sheet. (cid:149) Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. (cid:149) There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip(cid:146)s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. (cid:149) Microchip is willing to work with the customer who is concerned about the integrity of their code. (cid:149) Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as (cid:147)unbreakable.(cid:148) Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip(cid:146)s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, Accuron, and may be superseded by updates. It is your responsibility to dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, ensure that your application meets with your specifications. PROMATE, PowerSmart, rfPIC, and SmartShunt are MICROCHIP MAKES NO REPRESENTATIONS OR WAR- registered trademarks of Microchip Technology Incorporated RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, in the U.S.A. and other countries. WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, PICMASTER, SEEVAL, SmartSensor and The Embedded MERCHANTABILITY OR FITNESS FOR PURPOSE. Control Solutions Company are registered trademarks of Microchip disclaims all liability arising from this information and Microchip Technology Incorporated in the U.S.A. its use. Use of Microchip devices in life support and/or safety Analog-for-the-Digital Age, Application Maestro, dsPICDEM, applications is entirely at the buyer(cid:146)s risk, and the buyer agrees dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, to defend, indemnify and hold harmless Microchip from any and FanSense, FlexROM, fuzzyLAB, In-Circuit Serial all damages, claims, suits, or expenses resulting from such Programming, ICSP, ICEPIC, Linear Active Thermistor, use. No licenses are conveyed, implicitly or otherwise, under MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, any Microchip intellectual property rights. PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, Real ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and Zena are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. ' 2006, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company(cid:146)s quality system processes and procedures are for its PICmicrofi 8-bit MCUs, KEELOQfi code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip(cid:146)s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2006 Microchip Technology Inc. DS21987A-page 21

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: M icrochip: TC4451VAT TC4451VMF TC4451VMF713 TC4451VOA TC4451VOA713 TC4451VPA TC4452VAT TC4452VMF TC4452VMF713 TC4452VOA TC4452VOA713 TC4452VPA